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    • 2. 发明授权
    • Nonvolatile semiconductor memory device with a multi-layer sidewall spacer structure and method for manufacturing the same
    • 具有多层侧壁间隔结构的非易失性半导体存储器件及其制造方法
    • US06555865B2
    • 2003-04-29
    • US09902820
    • 2001-07-10
    • Joon-Sung LeeWoon-Kyung Lee
    • Joon-Sung LeeWoon-Kyung Lee
    • H01L2976
    • H01L27/11526H01L27/105H01L27/11543H01L29/42324H01L29/792
    • The present invention provides a nonvolatile memory device having high reliability with novel sidewall spacer structures. The gate stack structure for use in a nonvolatile memory device comprises a semiconductor substrate, a gate stack formed on the semiconductor substrate. The gate stack has a sidewall and a top surface. A multi-layer sidewall spacer structure is formed on the sidewall of the gate stack. The multi-layer sidewall spacer structure includes a first oxide layer, a first nitride layer, a second oxide layer, and a second nitride layer that are sequentially stacked. With the present invention, even if the second nitride layer is perforated or damaged during the formation of contact holes, sidewalls of the gate stack of nonvolatile memory cell can be protected with the first nitride layer from mobile ions. Also, etching damage to source/drain regions or field regions can be reduced.
    • 本发明提供一种具有高可靠性的新型侧壁间隔结构的非易失性存储器件。 用于非易失性存储器件的栅极堆叠结构包括半导体衬底,形成在半导体衬底上的栅叠层。 栅极堆叠具有侧壁和顶部表面。 在栅叠层的侧壁上形成多层侧壁间隔结构。 多层侧壁间隔结构包括依次堆叠的第一氧化物层,第一氮化物层,第二氧化物层和第二氮化物层。 利用本发明,即使在形成接触孔期间第二氮化物层被穿孔或损坏,非易失性存储单元的栅极堆叠的侧壁可以被移动离子的第一氮化物层保护。 此外,可以减少对源极/漏极区域或场区域的蚀刻损伤。
    • 4. 发明授权
    • Method for isolating semiconductor devices
    • 隔离半导体器件的方法
    • US6060399A
    • 2000-05-09
    • US923108
    • 1997-09-04
    • Young-Gwan KimJoon-Sung Lee
    • Young-Gwan KimJoon-Sung Lee
    • H01L21/76H01L21/762H01L21/30
    • H01L21/76232
    • A semiconductor device isolation method includes sequentially forming a first insulating film and a second insulating film on a semiconductor substrate, exposing a predetermined portion of the surface of the semiconductor substrate, forming a third insulating on the exposed surface of the semiconductor substrate and the second insulating film, forming sidewall spacers composed of the third insulating film at the sidewall surfaces of the first and second insulating films, forming a trench by performing an etching by a predetermined depth using the sidewall spacers as a mask, removing the sidewall spacers, filling a high density plasma chemical vapor deposition (HDP CVD) oxide in the trench, and removing the first and second insulating films.
    • 半导体器件隔离方法包括:在半导体衬底上依次形成第一绝缘膜和第二绝缘膜,暴露半导体衬底的表面的预定部分,在半导体衬底的暴露表面上形成第三绝缘体,将第二绝缘层 在所述第一和第二绝缘膜的侧壁形成由所述第三绝缘膜构成的侧壁隔离物,通过使用所述侧壁间隔物作为掩模,通过以预定深度进行蚀刻而形成沟槽,除去所述侧壁间隔物,填充高 密度等离子体化学气相沉积(HDP CVD)氧化物,以及去除第一和第二绝缘膜。