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1. 发明申请

US20090068782A1 Nano-elastic memory device and method of manufacturing the same 失效
标题翻译：纳米弹性记忆装置及其制造方法
公开(公告)号：US20090068782A1
公开(公告)日：2009-03-12
申请号：US12289192
申请日：2008-10-22
申请人： Joo-han Chang , Dong-hun Kang , Young-kwan Cha , Wan-jun Park
发明人： Joo-han Chang , Dong-hun Kang , Young-kwan Cha , Wan-jun Park
IPC分类号： H01L21/00
CPC分类号： H01L27/115 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16 , Y10S977/742 , Y10S977/743 , Y10S977/842
摘要： A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.
摘要翻译：纳米弹性记忆装置及其制造方法。纳米弹性存储装置可以包括基板，在基板上平行布置的多个下电极，在基板上具有期望或预定厚度的绝缘材料形成的支撑单元，该基板具有露出下电极的空腔，在空腔中从下电极的表面垂直延伸的弹性体，以及形成在支撑单元上并与纳米弹性体上的下电极垂直交叉的多个上电极。

2. 发明授权

US07453085B2 Nano-elastic memory device and method of manufacturing the same 失效
标题翻译：纳米弹性记忆装置及其制造方法
公开(公告)号：US07453085B2
公开(公告)日：2008-11-18
申请号：US11505970
申请日：2006-08-18
申请人： Joo-han Chang , Dong-hun Kang , Young-kwan Cha , Wan-jun Park
发明人： Joo-han Chang , Dong-hun Kang , Young-kwan Cha , Wan-jun Park
IPC分类号： H01L29/06 , H01L29/08 , H01L31/0352
CPC分类号： H01L27/115 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16 , Y10S977/742 , Y10S977/743 , Y10S977/842
摘要： A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.
摘要翻译：纳米弹性记忆装置及其制造方法。纳米弹性存储装置可以包括基板，在基板上平行布置的多个下电极，在基板上具有期望或预定厚度的绝缘材料形成的支撑单元，该基板具有露出下电极的空腔，在空腔中从下电极的表面垂直延伸的弹性体，以及形成在支撑单元上并与纳米弹性体上的下电极垂直交叉的多个上电极。

3. 发明授权

US07816175B2 Nano-elastic memory device and method of manufacturing the same 失效
标题翻译：纳米弹性记忆装置及其制造方法
公开(公告)号：US07816175B2
公开(公告)日：2010-10-19
申请号：US12289192
申请日：2008-10-22
申请人： Joo-han Chang , Dong-hun Kang , Young-kwan Cha , Wan-jun Park
发明人： Joo-han Chang , Dong-hun Kang , Young-kwan Cha , Wan-jun Park
IPC分类号： H01L21/44
CPC分类号： H01L27/115 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16 , Y10S977/742 , Y10S977/743 , Y10S977/842
摘要： A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.
摘要翻译：纳米弹性记忆装置及其制造方法。纳米弹性存储装置可以包括基板，在基板上平行布置的多个下电极，在基板上具有期望或预定厚度的绝缘材料形成的支撑单元，该基板具有露出下电极的空腔，在空腔中从下电极的表面垂直延伸的弹性体，以及形成在支撑单元上并与纳米弹性体上的下电极垂直交叉的多个上电极。

4. 发明申请

US20070045691A1 Nano-elastic memory device and method of manufacturing the same 失效
标题翻译：纳米弹性记忆装置及其制造方法
公开(公告)号：US20070045691A1
公开(公告)日：2007-03-01
申请号：US11505970
申请日：2006-08-18
申请人： Joo-han Chang , Dong-hun Kang , Young-kwan Cha , Wan-jun Park
发明人： Joo-han Chang , Dong-hun Kang , Young-kwan Cha , Wan-jun Park
IPC分类号： H01L29/94 , H01L29/76 , H01L31/00
CPC分类号： H01L27/115 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16 , Y10S977/742 , Y10S977/743 , Y10S977/842
摘要： A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.
摘要翻译：纳米弹性记忆装置及其制造方法。纳米弹性存储装置可以包括基板，在基板上平行布置的多个下电极，在基板上具有期望或预定厚度的绝缘材料形成的支撑单元，该基板具有露出下电极的空腔，在空腔中从下电极的表面垂直延伸的弹性体，以及形成在支撑单元上并与纳米弹性体上的下电极垂直交叉的多个上电极。

5. 发明申请

US20070246784A1 Unipolar nanotube transistor using a carrier-trapping material 审中-公开
标题翻译：使用载流子捕获材料的单极纳米管晶体管
公开(公告)号：US20070246784A1
公开(公告)日：2007-10-25
申请号：US11212582
申请日：2005-08-29
申请人： Dong-hun Kang , Noe-jung Park , Wan-jun Park
发明人： Dong-hun Kang , Noe-jung Park , Wan-jun Park
IPC分类号： H01L29/76
CPC分类号： H01L51/0545 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1033 , H01L51/0048 , H01L51/0558
摘要： An ambipolar nanotube field effect transistor is converted to a unipolar nanotube field effect transistor by providing a carrier-trapping material such as oxygen molecules for the nanotube such as by adsorption or by providing a layer of material containing the carrier-trapping material adjacent to the nanotube.
摘要翻译：通过为纳米管提供诸如氧分子的载流子捕获材料，例如通过吸附或者通过提供包含与纳米管相邻的载流子俘获材料的材料层，将双极纳米管场效应晶体管转换为单极纳米管场效应晶体管。

6. 发明授权

US07918989B2 Gas sensor and method thereof 有权
标题翻译：气体传感器及其方法
公开(公告)号：US07918989B2
公开(公告)日：2011-04-05
申请号：US11543932
申请日：2006-10-06
申请人： Dong-hun Kang , Wan-jun Park , Chan-jin Park
发明人： Dong-hun Kang , Wan-jun Park , Chan-jin Park
IPC分类号： G01N27/26
CPC分类号： G01N33/0054 , B82Y15/00 , G01N33/005 , Y02A50/246 , Y10S977/92
摘要： A gas sensor and method thereof are provided. The example gas sensor may include first and second electrodes formed on a substrate, a carbon nanotube connecting the first and second electrodes on the substrate, a light source disposed above the carbon nanotube and an ampere meter measuring current flowing between the first and second electrodes. The example method may be directed to identifying a gas, and may include measuring a first current responsive to a first applied voltage during a first mode of operation, comparing the first measured current with a plurality of first index current values to obtain a first comparison result, each of the plurality of first index current values associated with one of a plurality of gases, measuring a second current responsive to a second applied voltage during a second mode of operation, comparing the second measured current with a plurality of second index current values to obtain a second comparison result, each of the plurality of second index current values associated with one of the plurality of gases and determining gas characteristic information based on the first and second comparison results.
摘要翻译：提供了一种气体传感器及其方法。示例性气体传感器可以包括形成在基板上的第一和第二电极，连接基板上的第一和第二电极的碳纳米管，设置在碳纳米管上方的光源和测量在第一和第二电极之间流动的电流的安培计。示例性方法可以用于识别气体，并且可以包括在第一操作模式期间测量响应于第一施加电压的第一电流，将第一测量电流与多个第一指数电流值进行比较以获得第一比较结果与多个气体中的一个相关联的多个第一指数电流值中的每一个在第二操作模式期间测量响应于第二施加电压的第二电流，将第二测量电流与多个第二指数电流值进行比较获得第二比较结果，所述多个第二指数电流值中的每一个与所述多个气体中的一个相关联，并且基于所述第一和第二比较结果确定气体特性信息。

7. 发明申请

US20070158209A1 Gas sensor and method thereof 有权
标题翻译：气体传感器及其方法
公开(公告)号：US20070158209A1
公开(公告)日：2007-07-12
申请号：US11543932
申请日：2006-10-06
申请人： Dong-hun Kang , Wan-jun Park , Chan-jin Park
发明人： Dong-hun Kang , Wan-jun Park , Chan-jin Park
IPC分类号： G01N27/26
CPC分类号： G01N33/0054 , B82Y15/00 , G01N33/005 , Y02A50/246 , Y10S977/92
摘要： A gas sensor and method thereof are provided. The example gas sensor may include first and second electrodes formed on a substrate, a carbon nanotube connecting the first and second electrodes on the substrate, a light source disposed above the carbon nanotube and an ampere meter measuring current flowing between the first and second electrodes. The example method may be directed to identifying a gas, and may include measuring a first current responsive to a first applied voltage during a first mode of operation, comparing the first measured current with a plurality of first index current values to obtain a first comparison result, each of the plurality of first index current values associated with one of a plurality of gases, measuring a second current responsive to a second applied voltage during a second mode of operation, comparing the second measured current with a plurality of second index current values to obtain a second comparison result, each of the plurality of second index current values associated with one of the plurality of gases and determining gas characteristic information based on the first and second comparison results.
摘要翻译：提供了一种气体传感器及其方法。示例性气体传感器可以包括形成在基板上的第一和第二电极，连接基板上的第一和第二电极的碳纳米管，设置在碳纳米管上方的光源和测量在第一和第二电极之间流动的电流的安培计。示例性方法可以用于识别气体，并且可以包括在第一操作模式期间测量响应于第一施加电压的第一电流，将第一测量电流与多个第一指数电流值进行比较以获得第一比较结果与多个气体中的一个相关联的多个第一指数电流值中的每一个在第二操作模式期间测量响应于第二施加电压的第二电流，将第二测量电流与多个第二指数电流值进行比较获得第二比较结果，所述多个第二指数电流值中的每一个与所述多个气体中的一个相关联，并且基于所述第一和第二比较结果确定气体特性信息。

8. 发明申请

US20090008638A1 Oxide semiconductor, thin film transistor including the same and method of manufacturing a thin film transistor 审中-公开
标题翻译：氧化物半导体，包括其的薄膜晶体管和制造薄膜晶体管的方法
公开(公告)号：US20090008638A1
公开(公告)日：2009-01-08
申请号：US12078706
申请日：2008-04-03
申请人： Dong-hun Kang , I-hun Song , Young-soo Park , Chang-jung Kim , Eun-ha Lee , Jae-cheol Lee
发明人： Dong-hun Kang , I-hun Song , Young-soo Park , Chang-jung Kim , Eun-ha Lee , Jae-cheol Lee
IPC分类号： H01L29/12 , H01L21/336
CPC分类号： H01L29/7869
摘要： Example embodiments relate to an oxide semiconductor including zinc oxide (ZnO), a thin film transistor including a channel formed of the oxide semiconductor and a method of manufacturing the thin film transistor. The oxide semiconductor may include a GaxInyZnz oxide and at least one material selected from the group consisting of a 4A group element, a 4A group oxide, a rare earth element and combinations thereof.
摘要翻译：示例性实施例涉及包括氧化锌（ZnO），包括由氧化物半导体形成的沟道的薄膜晶体管的氧化物半导体和制造薄膜晶体管的方法。氧化物半导体可以包括GaxInyZnz氧化物和选自由4A族元素，4A族氧化物，稀土元素及其组合组成的组中的至少一种材料。

9. 发明申请

US20060091440A1 Memory device having molecular adsorption layer 有权
标题翻译：具有分子吸附层的记忆装置
公开(公告)号：US20060091440A1
公开(公告)日：2006-05-04
申请号：US11221864
申请日：2005-09-09
申请人： Noe-jung Park , Kwang-hee Kim , Dong-hun Kang , Jae-woong Hyun , Ki-ha Hong
发明人： Noe-jung Park , Kwang-hee Kim , Dong-hun Kang , Jae-woong Hyun , Ki-ha Hong
IPC分类号： H01L29/94
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/02 , G11C13/025 , H01L51/002 , H01L51/0048 , H01L51/0051 , H01L51/0512 , H01L51/052 , H01L51/0525 , Y10S977/742
摘要： Provided is a memory device comprising a molecular adsorption layer. The memory device includes: a substrate; a source electrode and a drain electrode formed on the substrate and separated from each other; a carbon nanotube (CNT) layer electrically connected to the source electrode and the drain electrode; a memory cell contacting the CNT so as to store a charge from the CNT; and a gate electrode formed on the memory cell, wherein the memory cell comprises: a first insulating layer formed on the CNT; a molecular adsorption layer which is formed on the first insulating layer and acts as a charge storage layer; and a second insulating layer formed on the molecular adsorption layer.
摘要翻译：提供了包含分子吸附层的记忆装置。存储器件包括：衬底; 源电极和漏电极，形成在基板上并彼此分离; 电连接到源电极和漏电极的碳纳米管（CNT）层; 与CNT接触以存储来自CNT的电荷的存储单元; 以及形成在所述存储单元上的栅电极，其中所述存储单元包括：形成在所述CNT上的第一绝缘层; 分子吸附层，其形成在第一绝缘层上并用作电荷存储层; 以及形成在分子吸附层上的第二绝缘层。

10. 外观设计

USD396816S Tape measure 失效
公开(公告)号：USD396816S
公开(公告)日：1998-08-11
申请号：US78340
申请日：1997-10-21
申请人： Dong-hun Kang
设计人： Dong-hun Kang

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