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1. 发明授权

US08438195B2 File system operating method and devices using the same 有权
标题翻译：文件系统的操作方法和使用相同的设备
公开(公告)号：US08438195B2
公开(公告)日：2013-05-07
申请号：US13304579
申请日：2011-11-25
申请人： Jae Geuk Kim , Chul Lee , Joo Young Hwang
发明人： Jae Geuk Kim , Chul Lee , Joo Young Hwang
IPC分类号： G06F7/00
CPC分类号： G06F17/30129
摘要： A method of operating a file system in a host configured to store write data in a data storage device including a first region and a second region is disclosed, and includes; receiving a write data request for write data associated with a file, classifying the write data as hot data or cold data using file meta data for the file, and if the write data is classified as hot data, storing the write data in the first region, and otherwise if the write data is classified as cold data storing the write data in the second region.
摘要翻译：公开了一种在被配置为将写入数据存储在包括第一区域和第二区域的数据存储设备中的主机中操作文件系统的方法，并且包括：接收与文件相关联的写入数据的写入数据请求，使用文件的文件元数据将写入数据分类为热数据或冷数据，并且如果写入数据被分类为热数据，则将写入数据存储在第一区域，否则如果写入数据被分类为在第二区域中存储写入数据的冷数据。

2. 发明申请

US20120209893A1 FILE SYSTEM OPERATING METHOD AND DEVICES USING THE SAME 有权
标题翻译：文件系统操作方法和使用它的装置
公开(公告)号：US20120209893A1
公开(公告)日：2012-08-16
申请号：US13304579
申请日：2011-11-25
申请人： Jae Geuk Kim , Chul Lee , Joo Young Hwang
发明人： Jae Geuk Kim , Chul Lee , Joo Young Hwang
IPC分类号： G06F17/30
CPC分类号： G06F17/30129
摘要： A method of operating a file system in a host configured to store write data in a data storage device including a first region and a second region is disclosed, and includes; receiving a write data request for write data associated with a file, classifying the write data as hot data or cold data using file meta data for the file, and if the write data is classified as hot data, storing the write data in the first region, and otherwise if the write data is classified as cold data storing the write data in the second region.
摘要翻译：公开了一种在被配置为将写入数据存储在包括第一区域和第二区域的数据存储设备中的主机中操作文件系统的方法，并且包括：接收与文件相关联的写入数据的写入数据请求，使用文件的文件元数据将写入数据分类为热数据或冷数据，并且如果写入数据被分类为热数据，则将写入数据存储在第一区域，否则如果写入数据被分类为在第二区域中存储写入数据的冷数据。

3. 发明授权

US09152560B2 Data management method for nonvolatile memory 有权
标题翻译：非易失性存储器的数据管理方法
公开(公告)号：US09152560B2
公开(公告)日：2015-10-06
申请号：US13556243
申请日：2012-07-24
申请人： Joo-Young Hwang , Chul Lee
发明人： Joo-Young Hwang , Chul Lee
IPC分类号： G06F12/10 , G06F12/02
CPC分类号： G06F12/0292 , G06F12/10 , G06F2212/205
摘要： A method of managing data in a system including a nonvolatile memory includes storing a root object of application data, and at least one sub object referenced by the root object in the nonvolatile memory, and mapping virtual addresses of the root object and sub object to physical addresses of the nonvolatile memory respectively, in a page unit. The root object stored in the nonvolatile memory includes a pointer that references the sub object stored in the nonvolatile memory.
摘要翻译：一种在包括非易失性存储器的系统中管理数据的方法包括将应用数据的根对象以及由根对象引用的至少一个子对象存储在非易失性存储器中，并将根对象和子对象的虚拟地址映射到物理分别在页面单元中的非易失性存储器的地址。存储在非易失性存储器中的根对象包括引用存储在非易失性存储器中的子对象的指针。

4. 发明公开

US20230230671A1 HEALTH TRACKING SYSTEM WITH VERIFICATION OF NUTRITION INFORMATION 审中-公开
公开(公告)号：US20230230671A1
公开(公告)日：2023-07-20
申请号：US17992424
申请日：2022-11-22
申请人： Chul Lee , Hesamoddin Salehian
发明人： Chul Lee , Hesamoddin Salehian
IPC分类号： G16H20/60 , G06F7/36 , G16H50/30 , G16H10/60
CPC分类号： G16H20/60 , G06F7/36 , G16H50/30 , G16H10/60
摘要： A method for decreasing a number of individual entries in a database of user-created records which describe a single item by: receiving a plurality of user-created records, each of said records comprising at least a descriptive string; placing individual ones of the plurality of user-created records having a sufficiently similar descriptive string into one of a plurality of first groups; hashing the descriptive string of each of the plurality of first groups in order to place two or more groups into a single bin; performing a pair-wise comparison of the descriptive strings of the two or more groups in each bin; and when the comparison of the descriptive strings of the two or more groups in a bin results in a distance below a first threshold, merging the two or more groups into a combined group.

5. 发明授权

US09012982B2 Recessed transistor and method of manufacturing the same 有权
标题翻译：嵌入式晶体管及其制造方法
公开(公告)号：US09012982B2
公开(公告)日：2015-04-21
申请号：US12068179
申请日：2008-02-04
申请人： Keun-Nam Kim , Makoto Yoshida , Chul Lee , Dong-Gun Park , Woun-Suck Yang
发明人： Keun-Nam Kim , Makoto Yoshida , Chul Lee , Dong-Gun Park , Woun-Suck Yang
IPC分类号： H01L29/66 , H01L29/78
CPC分类号： H01L29/66795 , H01L29/66621 , H01L29/7834 , H01L29/7851
摘要： A recessed transistor and a method of manufacturing the same are provided. The recessed transistor may include a substrate, an active pin, a gate pattern and source and drain regions. The substrate may include an isolation layer that establishes an active region and a field region of the substrate. The substrate may include a recessed structure having an upper recess formed in the active region and a lower recess in communication with the upper recess. An active pin may be formed in a region between side surfaces of the isolation layer and the lower recess and an interface between the active region and the field region. The gate pattern may include a gate insulation layer formed on an inner surface of the recessed structure and a gate electrode formed on the gate insulation layer in the recessed structure. The source/drain regions may be formed adjacent to the active region and the gate electrode.
摘要翻译：提供凹陷晶体管及其制造方法。凹陷的晶体管可以包括衬底，有源引脚，栅极图案以及源极和漏极区域。衬底可以包括建立衬底的有源区和场区的隔离层。衬底可以包括具有形成在有源区域中的上凹部的凹陷结构和与上凹部连通的下凹部。有源销可以形成在隔离层和下凹部的侧表面之间的区域中以及有源区域和场区域之间的界面。栅极图案可以包括形成在凹陷结构的内表面上的栅极绝缘层和形成在凹陷结构中的栅极绝缘层上的栅电极。源/漏区可以与有源区和栅电极相邻形成。

6. 发明授权

US08791526B2 Vertical type integrated circuit devices and memory devices including conductive lines supported by Mesa structures and methods of fabricating the same 有权
标题翻译：包括由Mesa结构支撑的导电线的垂直型集成电路器件和存储器件及其制造方法
公开(公告)号：US08791526B2
公开(公告)日：2014-07-29
申请号：US12891910
申请日：2010-09-28
申请人： Jae-man Yoon , Hyeong-sun Hong , Kwang-youl Chun , Makoto Yoshida , Deok-sung Hwang , Chul Lee
发明人： Jae-man Yoon , Hyeong-sun Hong , Kwang-youl Chun , Makoto Yoshida , Deok-sung Hwang , Chul Lee
IPC分类号： H01L29/66
CPC分类号： H01L27/10897 , H01L27/105 , H01L27/10823 , H01L27/10876 , H01L27/10894 , H01L29/0657 , H01L29/42356 , H01L29/66666 , H01L29/7827
摘要： A vertical type integrated circuit device includes a substrate and a pillar vertically protruding from the substrate. The pillar includes a lower impurity region and an upper impurity region therein and a vertical channel region therebetween. A portion of the pillar including the lower impurity region therein includes a mesa laterally extending therefrom. The device further includes a first conductive line extending on a first sidewall of the pillar and electrically contacting the lower impurity region, and a second conductive line extending on a second sidewall of the pillar adjacent the vertical channel region. The second conductive line extends in a direction perpendicular to the first conductive line and is spaced apart from the mesa. Related devices and methods of fabrication are also discussed.
摘要翻译：垂直型集成电路装置包括基板和从基板垂直突出的支柱。支柱包括其中较低的杂质区域和上部杂质区域以及它们之间的垂直沟道区域。包括其中较低杂质区域的柱的一部分包括从其横向延伸的台面。该器件还包括在柱的第一侧壁上延伸并与下部杂质区电接触的第一导电线，以及在邻近垂直沟道区的柱的第二侧壁上延伸的第二导电线。第二导电线在垂直于第一导电线的方向上延伸并且与台面间隔开。还讨论了相关装置和制造方法。

7. 外观设计

USD663706S1 Television receiver 有权
公开(公告)号：USD663706S1
公开(公告)日：2012-07-17
申请号：US29410175
申请日：2012-01-05
申请人： Hyunbyung Cha , Chul Lee , Myungwhoon Lee , Yoonkyeong Lee , Jongchul Kim
设计人： Hyunbyung Cha , Chul Lee , Myungwhoon Lee , Yoonkyeong Lee , Jongchul Kim

8. 外观设计

USD647508S1 Home theater speaker 有权
公开(公告)号：USD647508S1
公开(公告)日：2011-10-25
申请号：US29383614
申请日：2011-01-20
申请人： Myung Whoon Lee , Chul Lee
设计人： Myung Whoon Lee , Chul Lee

9. 外观设计

USD642173S1 External CD-ROM drive 有权
标题翻译：外置CD-ROM驱动器
公开(公告)号：USD642173S1
公开(公告)日：2011-07-26
申请号：US29363832
申请日：2010-06-15
申请人： Chul Lee , Gang Ho Woo , Young Won Jeong
设计人： Chul Lee , Gang Ho Woo , Young Won Jeong

10. 发明申请

US20080315282A1 Semiconductor Devices Including Transistors Having Three Dimensional Channels 审中-公开
标题翻译：包括具有三维通道的晶体管的半导体器件
公开(公告)号：US20080315282A1
公开(公告)日：2008-12-25
申请号：US12199237
申请日：2008-08-27
申请人： Eun-Suk Cho , Chul Lee
发明人： Eun-Suk Cho , Chul Lee
IPC分类号： H01L29/788
CPC分类号： H01L23/485 , H01L29/41791 , H01L29/66795 , H01L29/785 , H01L29/7853 , H01L29/7854 , H01L2029/7858 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices including a gate electrode crossing over a semiconductor fin on a semiconductor substrate are provided. A gate insulating layer is provided between the gate electrode and the semiconductor fin. A channel region having a three-dimensional structure defined at the semiconductor fin under the gate electrode is also provided. Doped region is provided in the semiconductor fin at either side of the gate electrode and an interlayer insulating layer is provided on a surface of the semiconductor substrate. A connector region is coupled to the doped region and provided in an opening, which penetrates the interlayer insulating layer. A recess region is provided in the doped region and is coupled to the connector region. The connector region contacts an inner surface of the recess region. Related methods of fabricating semiconductor devices are also provided herein.
摘要翻译：提供包括在半导体衬底上与半导体鳍状物交叉的栅电极的半导体器件。栅极绝缘层设置在栅电极和半导体鳍之间。还提供了在栅电极下方的半导体鳍片处限定的具有三维结构的沟道区域。掺杂区域设置在栅电极的任一侧的半导体鳍片中，并且在半导体衬底的表面上设置层间绝缘层。连接器区域耦合到掺杂区域并且设置在穿过层间绝缘层的开口中。在掺杂区域中提供凹陷区域并且耦合到连接器区域。连接器区域接触凹部区域的内表面。本文还提供了制造半导体器件的相关方法。

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