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    • 1. 发明申请
    • METHOD AND APPARATUS FOR PROVIDING IMPEDANCE MATCHING FOR HIGH-FREQUENCY SIGNAL TRANSMITTER
    • 用于提供高频信号发射机的阻抗匹配的方法和装置
    • US20110189964A1
    • 2011-08-04
    • US12699112
    • 2010-02-03
    • Joo Young JeonSang Hwa JungJung Hyun KimYoung Kwon
    • Joo Young JeonSang Hwa JungJung Hyun KimYoung Kwon
    • H04B1/04
    • H04B1/04
    • In accordance with another representative embodiment, a high-frequency signal transmitter a power amplifier configured to supply a high-frequency signal; an antenna configured to transmit the high-frequency signal; a transmission line configured to transfer the high-frequency signal from the power amplifier to the antenna; and an impedance matching circuit connected to the transmission line. The high-frequency signal transmitter also comprises a mismatch detector. The mismatch detector is configured to designate a comparatively poor linearity region and a comparatively good linearity region by dividing a Smith chart into the two regions based on Adjacent Channel Power Ratio (ACPR) contours drawn on the Smith chart at a point on the transmission line where the impedance matching circuit is connected, to measure a time-dependent reflection coefficient of the high-frequency signal transmitter in terms of a phase and a magnitude, to determine whether the reflection coefficient is located in the comparatively poor linearity region or the comparatively good linearity region, and based on a result of the determination, to improve the linearity of the high-frequency signal transmitter.
    • 根据另一个代表性实施例,一种高频信号发射机,被配置为提供高频信号的功率放大器; 配置为发送高频信号的天线; 传输线,被配置为将高频信号从功率放大器传送到天线; 以及与传输线连接的阻抗匹配电路。 高频信号发射机还包括不匹配检测器。 不匹配检测器被配置为通过基于在传输线上的一点上在史密斯圆图上绘制的相邻信道功率比(ACPR)轮廓将史密斯圆图划分成两个区域来指定相对较差的线性区域和相对良好的线性度区域,其中 连接阻抗匹配电路,根据相位和幅度测量高频信号发射器的时间相关反射系数,以确定反射系数是否位于相对较差的线性区域或较好的线性度 区域,并且基于确定的结果,提高高频信号发射机的线性度。
    • 2. 发明授权
    • Method and apparatus for providing impedance matching for high-frequency signal transmitter
    • 提供高频信号发射机阻抗匹配的方法和装置
    • US08233851B2
    • 2012-07-31
    • US12699112
    • 2010-02-03
    • Joo Young JeonSang Hwa JungJung Hyun KimYoung Kwon
    • Joo Young JeonSang Hwa JungJung Hyun KimYoung Kwon
    • H04B1/04H04B17/00
    • H04B1/04
    • In accordance with another representative embodiment, a high-frequency signal transmitter a power amplifier configured to supply a high-frequency signal; an antenna configured to transmit the high-frequency signal; a transmission line configured to transfer the high-frequency signal from the power amplifier to the antenna; and an impedance matching circuit connected to the transmission line. The high-frequency signal transmitter also comprises a mismatch detector. The mismatch detector is configured to designate a comparatively poor linearity region and a comparatively good linearity region by dividing a Smith chart into the two regions based on Adjacent Channel Power Ratio (ACPR) contours drawn on the Smith chart at a point on the transmission line where the impedance matching circuit is connected, to measure a time-dependent reflection coefficient of the high-frequency signal transmitter in terms of a phase and a magnitude, to determine whether the reflection coefficient is located in the comparatively poor linearity region or the comparatively good linearity region, and based on a result of the determination, to improve the linearity of the high-frequency signal transmitter.
    • 根据另一个代表性实施例,一种高频信号发射机,被配置为提供高频信号的功率放大器; 配置为发送高频信号的天线; 传输线,被配置为将高频信号从功率放大器传送到天线; 以及与传输线连接的阻抗匹配电路。 高频信号发射机还包括不匹配检测器。 不匹配检测器被配置为通过基于在传输线上的一点上在史密斯圆图上绘制的相邻信道功率比(ACPR)轮廓将史密斯圆图划分成两个区域来指定相对较差的线性区域和相对良好的线性度区域,其中 连接阻抗匹配电路,根据相位和幅度测量高频信号发射器的时间相关反射系数,以确定反射系数是否位于相对较差的线性区域或较好的线性度 区域,并且基于确定的结果,提高高频信号发射机的线性度。
    • 3. 发明授权
    • Impedance matching circuit capable of efficiently isolating paths for multi-band power amplifier
    • 阻抗匹配电路能够有效隔离多波段功率放大器的路径
    • US08643449B2
    • 2014-02-04
    • US12732409
    • 2010-03-26
    • Jung Hyun KimUn Ha KimSang Hwa JungYoung Kwon
    • Jung Hyun KimUn Ha KimSang Hwa JungYoung Kwon
    • H03H7/38
    • H03F1/56
    • In accordance with a representative embodiment, an impedance matching circuit for use at an output stage of a power amplifier is disclosed. The impedance matching circuit comprises: an input port for receiving a frequency band signal; and a plurality of paths, each path being allocated with a principal band signal to be transmitted therethrough and including a path on-off network and a fixed-value impedance matching network. Depending on a type of the received frequency band signal, the path on-off network is configured to activate a selected one of the plurality of paths by rendering an input impedance of the selected path to have a lower absolute magnitude so that the signal is transmitted therethrough, and to deactivate the remaining paths of the plurality of paths by rendering the input impedance thereof to have a higher absolute magnitude so that the signal is not transmitted therethrough. The fixed-value impedance matching network matches a load impedance of the output port of each path to the input impedance thereof, thereby rendering the input impedance thereof to have a prescribed reference value with respect to the principal band signal when said path is activated by the path on-off network.
    • 根据代表性实施例,公开了一种在功率放大器的输出级使用的阻抗匹配电路。 阻抗匹配电路包括:用于接收频带信号的输入端口; 和多个路径,每个路径被分配有要通过其传输的主频带信号,并且包括路径开关网络和固定值阻抗匹配网络。 根据所接收的频带信号的类型,路径开关网络被配置为通过使所选择的路径的输入阻抗具有较低的绝对量值来激活所述多个路径中的所选择的一个路径,使得发送所述信号 并且通过使其输入阻抗具有更高的绝对量值来使多个路径的剩余路径去激活,使得该信号不通过其传输。 固定值阻抗匹配网络将每个路径的输出端口的负载阻抗与其输入阻抗匹配,从而当所述路径被激活时,其输入阻抗相对于主频带信号具有规定的参考值 路径开关网络。
    • 4. 发明授权
    • Power amplifier
    • 功率放大器
    • US08692620B2
    • 2014-04-08
    • US13541049
    • 2012-07-03
    • Moon Suk JeonJung-Rin WooSang Hwa JungJung Hyun KimYoung KwonIl Do Jung
    • Moon Suk JeonJung-Rin WooSang Hwa JungJung Hyun KimYoung KwonIl Do Jung
    • H03F3/04
    • H03F3/211H03F1/0211
    • A power amplifier including a MOSFET including a source supplied with a first DC power, a gate connected to an RF input signal, and a drain connected to a power supply terminal of an RF power amplification unit; a supply voltage modulation control unit that determines a DC gate voltage of the MOSFET based on an envelope of the RF input signal; and a bypass circuit connected between the drain and the power supply terminal. The MOSFET outputs a second DC power via the drain and amplifies the RF input signal based on a third DC power substantially identical to a differential between the first and the second DC power, and also outputs an RF power via the drain. The bypass circuit receives and rectifies the RF power to supply a recycled DC power to the power supply terminal of the RF power amplification unit.
    • 一种功率放大器,包括:包括提供有第一直流电源的源极的MOSFET,连接到RF输入信号的栅极和连接到RF功率放大单元的电源端子的漏极; 电源电压调制控制单元,其基于RF输入信号的包络确定MOSFET的DC栅极电压; 以及连接在漏极和电源端子之间的旁路电路。 MOSFET通过漏极输出第二直流电源,并且基于与第一和第二直流电力之间的差分基本相同的第三直流功率放大RF输入信号,并且还经由漏极输出RF功率。 旁路电路接收并整流RF功率以将再循环的DC电力提供给RF功率放大单元的电源端子。
    • 5. 发明申请
    • POWER AMPLIFIER
    • 功率放大器
    • US20140009232A1
    • 2014-01-09
    • US13541049
    • 2012-07-03
    • Moon Suk JeonJung-Rin WooSang Hwa JungJung Hyun KimYoung KwonIl Do Jung
    • Moon Suk JeonJung-Rin WooSang Hwa JungJung Hyun KimYoung KwonIl Do Jung
    • H03F3/45
    • H03F3/211H03F1/0211
    • A power amplifier including a MOSFET including a source supplied with a first DC power, a gate connected to an RF input signal, and a drain connected to a power supply terminal of an RF power amplification unit; a supply voltage modulation control unit that determines a DC gate voltage of the MOSFET based on an envelope of the RF input signal; and a bypass circuit connected between the drain and the power supply terminal. The MOSFET outputs a second DC power via the drain and amplifies the RF input signal based on a third DC power substantially identical to a differential between the first and the second DC power, and also outputs an RF power via the drain. The bypass circuit receives and rectifies the RF power to supply a recycled DC power to the power supply terminal of the RF power amplification unit.
    • 一种功率放大器,包括:包括提供有第一直流电源的源极的MOSFET,连接到RF输入信号的栅极和连接到RF功率放大单元的电源端子的漏极; 电源电压调制控制单元,其基于RF输入信号的包络确定MOSFET的DC栅极电压; 以及连接在漏极和电源端子之间的旁路电路。 MOSFET通过漏极输出第二直流电源,并且基于与第一和第二直流电力之间的差分基本相同的第三直流功率放大RF输入信号,并且还经由漏极输出RF功率。 旁路电路接收并整流RF功率以将再循环的DC电力提供给RF功率放大单元的电源端子。
    • 6. 发明申请
    • IMPEDANCE MATCHING CIRCUIT CAPABLE OF EFFICIENTLY ISOLATING PATHS FOR MULTI-BAND POWER AMPLIFIER
    • 具有多功能放大器高效隔离功能的阻抗匹配电路
    • US20110234316A1
    • 2011-09-29
    • US12732409
    • 2010-03-26
    • Jung Hyun KimUn Ha KimSang Hwa JungYoung Kwon
    • Jung Hyun KimUn Ha KimSang Hwa JungYoung Kwon
    • H03F1/08
    • H03F1/56
    • In accordance with a representative embodiment, an impedance matching circuit for use at an output stage of a power amplifier is disclosed. The impedance matching circuit comprises: an input port for receiving a frequency band signal; and a plurality of paths, each path being allocated with a principal band signal to be transmitted therethrough and including a path on-off network and a fixed-value impedance matching network. Depending on a type of the received frequency band signal, the path on-off network is configured to activate a selected one of the plurality of paths by rendering an input impedance of the selected path to have a lower absolute magnitude so that the signal is transmitted therethrough, and to deactivate the remaining paths of the plurality of paths by rendering the input impedance thereof to have a higher absolute magnitude so that the signal is not transmitted therethrough. The fixed-value impedance matching network matches a load impedance of the output port of each path to the input impedance thereof, thereby rendering the input impedance thereof to have a prescribed reference value with respect to the principal band signal when said path is activated by the path on-off network.
    • 根据代表性实施例,公开了一种在功率放大器的输出级使用的阻抗匹配电路。 阻抗匹配电路包括:用于接收频带信号的输入端口; 和多个路径,每个路径被分配有要通过其传输的主频带信号,并且包括路径开关网络和固定值阻抗匹配网络。 根据所接收的频带信号的类型,路径开关网络被配置为通过使所选择的路径的输入阻抗具有较低的绝对量值来激活所述多个路径中的所选择的一个路径,使得发送所述信号 并且通过使其输入阻抗具有更高的绝对量值来使多个路径的剩余路径去激活,使得该信号不通过其传输。 固定值阻抗匹配网络将每个路径的输出端口的负载阻抗匹配到其输入阻抗,从而当所述路径被激活时,其输入阻抗相对于主频带信号具有规定的参考值 路径开关网络。
    • 7. 发明授权
    • Power amplifier
    • 功率放大器
    • US08779860B2
    • 2014-07-15
    • US13586218
    • 2012-08-15
    • Moon Suk JeonJung Rin WooSang Hwa JungJung Hyun KimYoung Kwon
    • Moon Suk JeonJung Rin WooSang Hwa JungJung Hyun KimYoung Kwon
    • H03F1/22
    • H03F1/223H03F1/0222H03F2200/102H03F2200/18
    • A power amplifier comprises a common source amplification stage and a first common gate amplification stage. The common source amplification stage includes a common source transistor for receiving a radio frequency (RF) input signal via a gate. The first common gate amplification stage is connected in cascode between a variable supply voltage source and the common source amplification stage, and amplifies an output of the common source amplification stage. The first common gate amplification stage includes a first common gate transistor, and a first gate bias controller configured to generate a first divided voltage based on a variable supply voltage of the variable supply voltage source, and to supply a first gate bias voltage generated by buffering the first divided voltage to a gate of the first common gate transistor.
    • 功率放大器包括公共源极放大级和第一公共栅极放大级。 公共源极放大级包括用于经由栅极接收射频(RF)输入信号的公共源极晶体管。 第一公共栅极放大级以可变电源电压源和公共源极放大级之间的级联连接,并放大公共源极放大级的输出。 第一公共栅极放大级包括第一公共栅极晶体管和第一栅极偏置控制器,其被配置为基于可变电源电压源的可变电源电压产生第一分压,并且提供由缓冲产生的第一栅极偏置电压 第一公共栅极晶体管的栅极的第一分压。