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1. 发明授权

US07638414B2 Method of forming nitride semiconductor layer on patterned substrate and light emitting diode having the same 有权
标题翻译：在图案化基板上形成氮化物半导体层的方法和具有该氮化物半导体层的发光二极管
公开(公告)号：US07638414B2
公开(公告)日：2009-12-29
申请号：US12040439
申请日：2008-02-29
申请人： Joo Won Choi , Kyoung Hoon Kim , Eu Jin Hwang
发明人： Joo Won Choi , Kyoung Hoon Kim , Eu Jin Hwang
IPC分类号： H01L21/20 , H01L21/36 , H01L29/20
CPC分类号： H01L33/12 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/22
摘要： A method of forming high quality nitride semiconductor layers on a patterned substrate and a light emitting diode having the same are disclosed. After forming a nucleation layer on the patterned substrate, a first 3D and 2D growth layers are formed thereon in this order by growing nitride semiconductor layers in 3D and 2D growth conditions. Then, a second 3D growth layer is formed on the first 2D growth layer by growing a nitride semiconductor layer in another 3D growth condition, and a second 2D growth layer is formed on the second 3D growth layer by growing a nitride semiconductor layer in another 2D growth condition. As such, the thickness of the 3D growth layer can be reduced by alternately forming the 3D and 2D growth layers, thereby preventing the 3D growth layer from having a rough surface and improving crystal quality of the final 2D growth layer.
摘要翻译：公开了在图案化基板上形成高质量氮化物半导体层的方法和具有该氮化物半导体层的发光二极管。在图案化的衬底上形成成核层之后，通过在3D和2D生长条件下生长氮化物半导体层，依次形成第一3D和2D生长层。然后，通过在另一3D生长条件下生长氮化物半导体层，在第一2D生长层上形成第二3D生长层，并且通过在另一2D中生长氮化物半导体层，在第二3D生长层上形成第二2D生长层生长条件。因此，可以通过交替地形成3D和2D生长层来减少3D生长层的厚度，从而防止3D生长层具有粗糙表面并提高最终2D生长层的晶体质量。

2. 发明申请

US20080217647A1 METHOD OF FORMING NITRIDE SEMICONDUCTOR LAYER ON PATTERNED SUBSTRATE AND LIGHT EMITTING DIODE HAVING THE SAME 有权
标题翻译：在形成基底的氮化物半导体层和其发光二极管上形成氮化物层的方法
公开(公告)号：US20080217647A1
公开(公告)日：2008-09-11
申请号：US12040439
申请日：2008-02-29
申请人： Joo Won Choi , Kyoung Hoon Kim , Eu Jin Hwang
发明人： Joo Won Choi , Kyoung Hoon Kim , Eu Jin Hwang
IPC分类号： H01L21/20
CPC分类号： H01L33/12 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/22
摘要： A method of forming high quality nitride semiconductor layers on a patterned substrate and a light emitting diode having the same are disclosed. After forming a nucleation layer on the patterned substrate, a first 3D and 2D growth layers are formed thereon in this order by growing nitride semiconductor layers in 3D and 2D growth conditions. Then, a second 3D growth layer is formed on the first 2D growth layer by growing a nitride semiconductor layer in another 3D growth condition, and a second 2D growth layer is formed on the second 3D growth layer by growing a nitride semiconductor layer in another 2D growth condition. As such, the thickness of the 3D growth layer can be reduced by alternately forming the 3D and 2D growth layers, thereby preventing the 3D growth layer from having a rough surface and improving crystal quality of the final 2D growth layer.
摘要翻译：公开了在图案化基板上形成高质量氮化物半导体层的方法和具有该氮化物半导体层的发光二极管。在图案化的衬底上形成成核层之后，通过在3D和2D生长条件下生长氮化物半导体层，依次形成第一3D和2D生长层。然后，通过在另一3D生长条件下生长氮化物半导体层，在第一2D生长层上形成第二3D生长层，并且通过在另一2D中生长氮化物半导体层，在第二3D生长层上形成第二2D生长层生长条件。因此，可以通过交替地形成3D和2D生长层来减少3D生长层的厚度，从而防止3D生长层具有粗糙表面并提高最终2D生长层的晶体质量。

3. 发明申请

US20090261376A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：氮化物半导体发光二极管及其制造方法
公开(公告)号：US20090261376A1
公开(公告)日：2009-10-22
申请号：US12090059
申请日：2007-01-29
申请人： Eu Jin Hwang
发明人： Eu Jin Hwang
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L21/02647 , H01L33/007 , H01L33/12
摘要： The present invention provides a light emitting diode comprising a substrate: a nitride semiconductor layer formed on the substrate; an ITO mask pattern formed on the nitride semiconductor layer; an N-type semiconductor layer formed through lateral growth on the nitride semiconductor layer and the ITO mask pattern; and a P-type semiconductor layer formed on the N-type semiconductor layer. In a nitride semiconductor light emitting diode of the present invention, a nitride semiconductor layer is formed through lateral growth, so that crystal defects can be reduced, thereby enhancing the crystallinity of the semiconductor layer. Accordingly, the performance of the light emitting diode can be enhanced, and the reliability thereof can be secured. Particularly, there is an advantage in that since ITO with high electrical conductivity is used as a mask pattern for lateral growth, so that a current spreading property is improved, thereby enhancing light emitting efficiency.
摘要翻译：本发明提供了一种发光二极管，包括基板：形成在基板上的氮化物半导体层; 形成在所述氮化物半导体层上的ITO掩模图案; 通过氮化物半导体层和ITO掩模图案上的横向生长形成的N型半导体层; 以及形成在N型半导体层上的P型半导体层。在本发明的氮化物半导体发光二极管中，通过横向生长形成氮化物半导体层，从而能够降低晶体缺陷，从而提高半导体层的结晶性。因此，可以提高发光二极管的性能，并且可以确保发光二极管的可靠性。特别地，因为具有高导电性的ITO被用作用于横向生长的掩模图案，因此提高了电流扩展性，从而提高了发光效率。

4. 发明申请

US20080237613A1 Ac Light Emitting Device Having Photonic Crystal Structure and Method of Fabricating the Same 有权
标题翻译：具有光子晶体结构的交流发光装置及其制造方法
公开(公告)号：US20080237613A1
公开(公告)日：2008-10-02
申请号：US12065063
申请日：2006-09-06
申请人： Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Jong Kyu Kim , Jun Hee Lee
发明人： Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Jong Kyu Kim , Jun Hee Lee
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/007 , H01L33/20 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265
摘要： Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided.
摘要翻译：公开了具有光子晶体结构的AC发光器件及其制造方法。发光器件包括多个发光单元和将发光单元彼此电连接的金属布线。此外，每个发光单元包括第一导电类型半导体层，设置在第一导电类型半导体层的一个区域上的第二导电类型半导体层以及置于第一和第二导电类型半导体层之间的有源层。此外，在第二导电型半导体层中形成光子晶体结构。光子晶体结构防止从有源层发射的光通过周期性阵列横向传播，使得可以提高发光器件的光提取效率。此外，金属配线将多个发光单元彼此电连接，从而可以提供交流发光装置。

5. 发明授权

US08716727B2 Ac light emitting device having photonic crystal structure and method of fabricating the same 有权
标题翻译：具有光子晶体结构的Ac发光器件及其制造方法
公开(公告)号：US08716727B2
公开(公告)日：2014-05-06
申请号：US12065063
申请日：2006-09-06
申请人： Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Jong Kyu Kim , Jun Hee Lee
发明人： Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Jong Kyu Kim , Jun Hee Lee
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/007 , H01L33/20 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265
摘要： Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided.
摘要翻译：公开了具有光子晶体结构的AC发光器件及其制造方法。发光器件包括多个发光单元和将发光单元彼此电连接的金属布线。此外，每个发光单元包括第一导电类型半导体层，设置在第一导电类型半导体层的一个区域上的第二导电类型半导体层以及置于第一和第二导电类型半导体层之间的有源层。此外，在第二导电型半导体层中形成光子晶体结构。光子晶体结构防止从有源层发射的光通过周期性阵列横向传播，使得可以提高发光器件的光提取效率。此外，金属配线将多个发光单元彼此电连接，从而可以提供交流发光装置。

6. 发明授权

US08054002B2 Light emitting device with light emitting cells arrayed 有权
标题翻译：具有排列发光单元的发光装置
公开(公告)号：US08054002B2
公开(公告)日：2011-11-08
申请号：US12088906
申请日：2006-12-05
申请人： Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Lacroix Yves
发明人： Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Lacroix Yves
IPC分类号： H05B37/22
CPC分类号： H05B33/0821 , H01L24/37 , H01L24/40 , H01L27/156 , H01L33/62 , H01L2224/371 , H01L2224/40137 , H01L2924/00014 , H01L2924/12041 , H05B33/0803 , H05B33/0809 , Y02B20/348 , H01L2924/00 , H01L2224/37099 , H01L2224/84
摘要： The present invention relates to a light emitting device. The light emitting device according to the present invention comprises a light emitting cell block having a plurality of light emitting cells; and a bridge rectifying circuit connected to input and output terminals of the light emitting cell block, wherein the bridge rectifying circuit includes a plurality of diodes between nodes. In manufacturing an AC light emitting device with a bridge rectifying circuit built therein, the present invention can provide a light emitting device capable of enhancing the reliability and luminance of the light emitting device by setting the size of diodes of the bridge rectifying circuit to be a certain size and controlling the number thereof.
摘要翻译：本发明涉及一种发光装置。根据本发明的发光器件包括具有多个发光单元的发光单元块; 以及连接到所述发光单元块的输入和输出端子的桥式整流电路，其中所述桥式整流电路在节点之间包括多个二极管。在制造其中内置有桥式整流电路的交流发光装置的情况下，本发明可以提供一种通过将桥式整流电路的二极管的尺寸设定为一个可以提高发光装置的可靠性和亮度的发光装置一定的尺寸并控制其数量。

7. 发明申请

US20100078658A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100078658A1
公开(公告)日：2010-04-01
申请号：US12630370
申请日：2009-12-03
申请人： Jong Lam LEE , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
发明人： Jong Lam LEE , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
IPC分类号： H01L27/15 , H01L33/62
CPC分类号： H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
摘要： The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention is provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.
摘要翻译：本发明涉及一种发光器件及其制造方法。根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面或P型半导体层的水平面为20〜80°的斜率。此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体发光单元的层与水平面的倾斜度为20〜80°。此外，本发明提供一种制造发光器件的方法。因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

8. 发明申请

US20120205625A1 (Al, In, Ga, B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE 有权
标题翻译：（Al，In，Ga，B）N图案基板上的器件结构
公开(公告)号：US20120205625A1
公开(公告)日：2012-08-16
申请号：US13454321
申请日：2012-04-24
申请人： Michael Iza , Hitoshi Sato , Eu Jin Hwang , Steven P. DenBaars , Shuji Nakamura
发明人： Michael Iza , Hitoshi Sato , Eu Jin Hwang , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L33/04 , H01L33/12 , H01L33/32
摘要： A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN where 0
摘要翻译：在图案化衬底上的氮化物发光二极管，包括具有In x Ga 1-x N和In y Ga 1-y N的交替层的至少两个周期的氮化物中间层，其中0

9. 发明申请

US20090152586A1 LIGHT EMITTING DIODE HAVING ACTIVE REGION OF MULTI QUANTUM WELL STRUCTURE 有权
标题翻译：具有多量子结构活动区域的发光二极管
公开(公告)号：US20090152586A1
公开(公告)日：2009-06-18
申请号：US12261627
申请日：2008-10-30
申请人： Dong Seon Lee , Eu Jin Hwang
发明人： Dong Seon Lee , Eu Jin Hwang
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： Disclosed is a light emitting diode having an active region of a multi quantum well structure. The active region is positioned between GaN-based N-type and P-type compound semiconductor layers. At least one of barrier layers in the active region includes an undoped InGaN layer and a Si-doped GaN layer, and the Si-doped GaN layer is in contact with a well layer positioned at a side of the P-type compound semiconductor layer therefrom. Accordingly, carrier overflow and a quantum confined stark effect can be reduced, thereby improving an electron-hole recombination rate. Further, disclosed is an active region of a multi quantum well structure including relatively thick barrier layers and relatively thin barrier layers.
摘要翻译：公开了具有多量子阱结构的有源区的发光二极管。有源区位于GaN基N型和P型化合物半导体层之间。有源区中的至少一个势垒层包括未掺杂的InGaN层和Si掺杂的GaN层，并且掺杂Si的GaN层与位于其P型化合物半导体层侧面的阱层接触。因此，可以降低载流子溢出和量子限制的Stark效应，从而提高电子 - 空穴复合率。此外，公开了包括相对较厚的阻挡层和相对薄的阻挡层的多量子阱结构的有源区。

10. 发明授权

US08592802B2 (Al, In, Ga, B)N device structures on a patterned substrate 有权
标题翻译：（Al，In，Ga，B）N个器件结构
公开(公告)号：US08592802B2
公开(公告)日：2013-11-26
申请号：US13454321
申请日：2012-04-24
申请人： Michael Iza , Hitoshi Sato , Eu Jin Hwang , Steven P. DenBaars , Shuji Nakamura
发明人： Michael Iza , Hitoshi Sato , Eu Jin Hwang , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/22
CPC分类号： H01L33/04 , H01L33/12 , H01L33/32
摘要： A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN where 0
摘要翻译：在图案化衬底上的氮化物发光二极管，包括具有In x Ga 1-x N和In y Ga 1-y N的交替层的至少两个周期的氮化物中间层，其中0

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