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1. 发明申请

US20070010055A1 NON-VOLATILE MEMORY AND FABRICATING METHOD THEREOF 有权
标题翻译：非易失性存储器及其制造方法
公开(公告)号：US20070010055A1
公开(公告)日：2007-01-11
申请号：US11180117
申请日：2005-07-11
申请人： Jongoh Kim , Yider Wu , Kent-Kuohua Chang
发明人： Jongoh Kim , Yider Wu , Kent-Kuohua Chang
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L27/115 , H01L27/11568
摘要： A method of fabricating a non-volatile memory is provided. A plurality of columns of isolation structures are formed on a substrate. A plurality of rows of stacked gate structures crossing over the isolation structures are formed on the substrate. A plurality of doping regions are formed in the substrate between two neighboring stacked gate structures. A plurality of stripes of spacers are formed on the sidewalls of stacked gate structures. A plurality of first dielectric layers are formed on a portion of the isolation structures adjacent to two rows of stacked gate structures. Also, one isolation structure is disposed between two neighboring first dielectric layers in the same row, while two neighboring rows comprising the first dielectric layer and the isolation structure are arranged in an interlacing manner. A plurality of first conductive: layers are formed between two neighboring first dielectric layers in the same row.
摘要翻译：提供了一种制造非易失性存储器的方法。在衬底上形成多个隔离结构的列。在衬底上形成多个跨越隔离结构的层叠栅极结构的行。在两个相邻的堆叠栅极结构之间的衬底中形成多个掺杂区域。在堆叠栅极结构的侧壁上形成多个隔离条。多个第一电介质层形成在隔离结构的与两排堆叠栅极结构相邻的部分上。此外，一个隔离结构设置在相同行中的两个相邻的第一介电层之间，而包括第一介电层和隔离结构的两个相邻行以隔行方式布置。在同一行中的两个相邻的第一介电层之间形成多个第一导电层。

2. 发明授权

US07408220B2 Non-volatile memory and fabricating method thereof 失效
标题翻译：非易失性存储器及其制造方法
公开(公告)号：US07408220B2
公开(公告)日：2008-08-05
申请号：US11463250
申请日：2006-08-08
申请人： Jongoh Kim , Yider Wu , Kent-Kuohua Chang
发明人： Jongoh Kim , Yider Wu , Kent-Kuohua Chang
IPC分类号： H01L29/788
CPC分类号： H01L21/28282 , H01L27/115 , H01L27/11568
摘要： A method of fabricating a non-volatile memory is provided. A plurality of columns of isolation structures are formed on a substrate. A plurality of rows of stacked gate structures crossing over the isolation structures are formed on the substrate. A plurality of doping regions are formed in the substrate between two neighboring stacked gate structures. A plurality of stripes of spacers are formed on the sidewalls of stacked gate structures. A plurality of first dielectric layers are formed on a portion of the isolation structures adjacent to two rows of stacked gate structures. Also, one isolation structure is disposed between two neighboring first dielectric layers in the same row, while two neighboring rows comprising the first dielectric layer and the isolation structure are arranged in an interlacing manner. A plurality of first conductive layers are formed between two neighboring first dielectric layers in the same row.
摘要翻译：提供了一种制造非易失性存储器的方法。在衬底上形成多个隔离结构的列。在衬底上形成多个跨越隔离结构的层叠栅极结构的行。在两个相邻的堆叠栅极结构之间的衬底中形成多个掺杂区域。在堆叠栅极结构的侧壁上形成多个隔离条。多个第一电介质层形成在隔离结构的与两排堆叠栅极结构相邻的部分上。此外，一个隔离结构设置在相同行中的两个相邻的第一介电层之间，而包括第一介电层和隔离结构的两个相邻行以隔行方式布置。在同一行中的两个相邻的第一电介质层之间形成多个第一导电层。

3. 发明申请

US20070026609A1 NON-VOLATILE MEMORY AND FABRICATING METHOD THEREOF 失效
标题翻译：非易失性存储器及其制造方法
公开(公告)号：US20070026609A1
公开(公告)日：2007-02-01
申请号：US11463250
申请日：2006-08-08
申请人： Jongoh Kim , Yider Wu , Kent-Kuohua Chang
发明人： Jongoh Kim , Yider Wu , Kent-Kuohua Chang
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L27/115 , H01L27/11568
摘要： A method of fabricating a non-volatile memory is provided. A plurality of columns of isolation structures are formed on a substrate. A plurality of rows of stacked gate structures crossing over the isolation structures are formed on the substrate. A plurality of doping regions are formed in the substrate between two neighboring stacked gate structures. A plurality of stripes of spacers are formed on the sidewalls of stacked gate structures. A plurality of first dielectric layers are formed on a portion of the isolation structures adjacent to two rows of stacked gate structures. Also, one isolation structure is disposed between two neighboring first dielectric layers in the same row, while two neighboring rows comprising the first dielectric layer and the isolation structure are arranged in an interlacing manner. A plurality of first conductive layers are formed between two neighboring first dielectric layers in the same row.
摘要翻译：提供了一种制造非易失性存储器的方法。在衬底上形成多个隔离结构的列。在衬底上形成多个跨越隔离结构的层叠栅极结构的行。在两个相邻的堆叠栅极结构之间的衬底中形成多个掺杂区域。在堆叠栅极结构的侧壁上形成多个隔离条。多个第一电介质层形成在隔离结构的与两排堆叠栅极结构相邻的部分上。此外，一个隔离结构设置在相同行中的两个相邻的第一介电层之间，而包括第一介电层和隔离结构的两个相邻行以隔行方式布置。在同一行中的两个相邻的第一电介质层之间形成多个第一导电层。

4. 发明授权

US07157333B1 Non-volatile memory and fabricating method thereof 有权
标题翻译：非易失性存储器及其制造方法
公开(公告)号：US07157333B1
公开(公告)日：2007-01-02
申请号：US11180117
申请日：2005-07-11
申请人： Jongoh Kim , Yider Wu , Kent-Kuohua Chang
发明人： Jongoh Kim , Yider Wu , Kent-Kuohua Chang
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L27/115 , H01L27/11568
摘要： A method of fabricating a non-volatile memory is provided. A plurality of columns of isolation structures are formed on a substrate. A plurality of rows of stacked gate structures crossing over the isolation structures are formed on the substrate. A plurality of doping regions are formed in the substrate between two neighboring stacked gate structures. A plurality of stripes of spacers are formed on the sidewalls of stacked gate structures. A plurality of first dielectric layers are formed on a portion of the isolation structures adjacent to two rows of stacked gate structures. Also, one isolation structure is disposed between two neighboring first dielectric layers in the same row, while two neighboring rows comprising the first dielectric layer and the isolation structure are arranged in an interlacing manner. A plurality of first conductive layers are formed between two neighboring first dielectric layers in the same row.
摘要翻译：提供了一种制造非易失性存储器的方法。在衬底上形成多个隔离结构的列。在衬底上形成多个跨越隔离结构的层叠栅极结构的行。在两个相邻的堆叠栅极结构之间的衬底中形成多个掺杂区域。在堆叠栅极结构的侧壁上形成多个隔离条。多个第一电介质层形成在隔离结构的与两排堆叠栅极结构相邻的部分上。此外，一个隔离结构设置在相同行中的两个相邻的第一介电层之间，而包括第一介电层和隔离结构的两个相邻行以隔行方式布置。在同一行中的两个相邻的第一电介质层之间形成多个第一导电层。

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