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1. 发明授权

US08420432B2 Method of forming semiconductor device 有权
标题翻译：半导体器件形成方法
公开(公告)号：US08420432B2
公开(公告)日：2013-04-16
申请号：US13228201
申请日：2011-09-08
申请人： Jong-Won Choi , Jun-Seok Yang , Keon-Yong Cheon , Sung-Hyun Yoon
发明人： Jong-Won Choi , Jun-Seok Yang , Keon-Yong Cheon , Sung-Hyun Yoon
IPC分类号： H01L31/18 , H01L21/8234
CPC分类号： H01L27/0629 , H01L21/823456 , H01L27/14609 , H01L27/14689
摘要： Provided is a method of forming a semiconductor device. The method includes forming an insulating film on a semiconductor substrate, a conductive film on the insulating film, and a first structure and a second structure on the conductive film. The semiconductor substrate has first and second regions. The first and second structures are formed on the first and second regions, respectively. An impurity diffused region is formed in the semiconductor substrate using the first structure as a mask. The impurity diffused region overlaps the first structure. A portion of the first structure, and the conductive film are etched to respectively form a gate structure and a capacitor structure on the first and second regions.
摘要翻译：提供一种形成半导体器件的方法。该方法包括在半导体衬底上形成绝缘膜，在绝缘膜上形成导电膜，以及在导电膜上形成第一结构和第二结构。半导体衬底具有第一和第二区域。第一和第二结构分别形成在第一和第二区域上。使用第一结构作为掩模在半导体衬底中形成杂质扩散区域。杂质扩散区与第一结构重叠。第一结构的一部分和导电膜被蚀刻以分别在第一和第二区域上形成栅极结构和电容器结构。

2. 发明申请

US20110303956A1 IMAGE SENSORS HAVING LIGHT SHIELD PATTERNS BETWEEN AN OPTICAL BLACK REGION AND AN ACTIVE PIXEL REGION 有权
标题翻译：具有光学黑色区域和活动像素区域之间的光屏蔽图像的图像传感器
公开(公告)号：US20110303956A1
公开(公告)日：2011-12-15
申请号：US13155509
申请日：2011-06-08
申请人： Keon Yong Cheon , Jong-Won Choi , Sung-Hyun Yoon
发明人： Keon Yong Cheon , Jong-Won Choi , Sung-Hyun Yoon
IPC分类号： H01L31/0216 , H01L27/146
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14623
摘要： An image sensor having a light receiving region and an optical black region includes a semiconductor substrate, an interconnection disposed on the semiconductor substrate and extending along an interface between the light receiving region and the optical black region, and via plugs disposed between the interconnection and the semiconductor substrate and serving as light shielding members at the interface. The via plugs are arranged in a zigzagging pattern along the interface.
摘要翻译：具有受光区域和光学黑色区域的图像传感器包括：半导体衬底;布置在半导体衬底上并沿着光接收区域和光学黑色区域之间的界面延伸的互连;以及布置在互连和半导体基板，并且在界面处用作遮光构件。通孔插头沿着界面以锯齿形图案布置。

3. 发明授权

US08816412B2 Image sensors having light shield patterns between an optical black region and an active pixel region 有权
标题翻译：具有在光学黑色区域和有源像素区域之间的遮光图案的图像传感器
公开(公告)号：US08816412B2
公开(公告)日：2014-08-26
申请号：US13155509
申请日：2011-06-08
申请人： Keon Yong Cheon , Jong-Won Choi , Sung-Hyun Yoon
发明人： Keon Yong Cheon , Jong-Won Choi , Sung-Hyun Yoon
IPC分类号： H01L27/146 , H01L31/14
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14623
摘要： An image sensor having a light receiving region and an optical black region includes a semiconductor substrate, an interconnection disposed on the semiconductor substrate and extending along an interface between the light receiving region and the optical black region, and via plugs disposed between the interconnection and the semiconductor substrate and serving as light shielding members at the interface. The via plugs are arranged in a zigzagging pattern along the interface.
摘要翻译：具有受光区域和光学黑色区域的图像传感器包括：半导体衬底;布置在半导体衬底上并沿着光接收区域和光学黑色区域之间的界面延伸的互连;以及布置在互连和半导体基板，并且在界面处用作遮光构件。通孔插头沿着界面以锯齿形图案布置。

4. 发明授权

US08063496B2 Semiconductor integrated circuit device and method of fabricating the same 有权
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US08063496B2
公开(公告)日：2011-11-22
申请号：US12230429
申请日：2008-08-28
申请人： Keon-Yong Cheon , Tae-Seok Oh , Jong-Won Choi , Su-Young Oh
发明人： Keon-Yong Cheon , Tae-Seok Oh , Jong-Won Choi , Su-Young Oh
IPC分类号： H01L23/48
CPC分类号： H01L23/481 , H01L24/11 , H01L24/13 , H01L29/78 , H01L2224/0231 , H01L2224/0401 , H01L2224/05552 , H01L2224/05553 , H01L2224/13027 , H01L2224/13099 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/13124 , H01L2224/13139 , H01L2224/13147 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01056 , H01L2924/01057 , H01L2924/01059 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/10329 , H01L2924/14 , H01L2924/1433 , H01L2924/19041 , H01L2924/30105 , H01L2924/00012
摘要： A semiconductor integrated circuit device includes a semiconductor substrate including a main chip region and a pad region, a multi-layer pad structure on the pad region of the semiconductor substrate, a redistribution pad through the semiconductor substrate and in contact with a bottom surface of the multi-layer pad structure, the redistribution pad being electrically connected to the multi-layer pad structure, a trench belt through the semiconductor substrate and surrounding the redistribution pad, the trench belt electrically isolating the redistribution pad and a portion of the semiconductor substrate adjacent to the redistribution pad, and a connection terminal on the redistribution pad, the connection terminal electrically connecting the redistribution pad to an external source.
摘要翻译：半导体集成电路器件包括：半导体衬底，包括主芯片区域和焊盘区域;在半导体衬底的焊盘区域上的多层焊盘结构;通过半导体衬底的再分布焊盘，并与该半导体衬底的底表面接触; 多层焊盘结构，再分配焊盘电连接到多层焊盘结构，穿过半导体衬底的沟槽带并围绕再分布焊盘，沟槽带将再分配焊盘和与半导体衬底相邻的部分电隔离所述再分配焊盘和所述再分配焊盘上的连接端子，所述连接端子将所述再分配焊盘电连接到外部源。

5. 发明申请

US20090057899A1 Semiconductor integrated circuit device and method of fabricating the same 有权
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US20090057899A1
公开(公告)日：2009-03-05
申请号：US12230429
申请日：2008-08-28
申请人： Keon-Yong Cheon , Tae-Seok Oh , Jong-Won Choi , Su-Young Oh
发明人： Keon-Yong Cheon , Tae-Seok Oh , Jong-Won Choi , Su-Young Oh
IPC分类号： H01L21/60 , H01L23/498
CPC分类号： H01L23/481 , H01L24/11 , H01L24/13 , H01L29/78 , H01L2224/0231 , H01L2224/0401 , H01L2224/05552 , H01L2224/05553 , H01L2224/13027 , H01L2224/13099 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/13124 , H01L2224/13139 , H01L2224/13147 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01056 , H01L2924/01057 , H01L2924/01059 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/10329 , H01L2924/14 , H01L2924/1433 , H01L2924/19041 , H01L2924/30105 , H01L2924/00012
摘要： A semiconductor integrated circuit device includes a semiconductor substrate including a main chip region and a pad region, a multi-layer pad structure on the pad region of the semiconductor substrate, a redistribution pad through the semiconductor substrate and in contact with a bottom surface of the multi-layer pad structure, the redistribution pad being electrically connected to the multi-layer pad structure, a trench belt through the semiconductor substrate and surrounding the redistribution pad, the trench belt electrically isolating the redistribution pad and a portion of the semiconductor substrate adjacent to the redistribution pad, and a connection terminal on the redistribution pad, the connection terminal electrically connecting the redistribution pad to an external source.
摘要翻译：半导体集成电路器件包括：半导体衬底，包括主芯片区域和焊盘区域;在半导体衬底的焊盘区域上的多层焊盘结构;通过半导体衬底的再分布焊盘，并与该半导体衬底的底表面接触; 多层焊盘结构，再分配焊盘电连接到多层焊盘结构，穿过半导体衬底的沟槽带并围绕再分布焊盘，沟槽带将再分配焊盘和与半导体衬底相邻的部分电隔离所述再分配焊盘和所述再分配焊盘上的连接端子，所述连接端子将所述再分配焊盘电连接到外部源。

6. 发明授权

US09373798B2 Organometallic compound and organic light-emitting device including the same 有权
标题翻译：有机金属化合物和包括其的有机发光器件
公开(公告)号：US09373798B2
公开(公告)日：2016-06-21
申请号：US13803650
申请日：2013-03-14
申请人： Jong-Won Choi , Yoon-Hyun Kwak , Bum-Woo Park , Sun-Young Lee , Wha-Il Choi , So-Yeon Kim , Ji-Youn Lee
发明人： Jong-Won Choi , Yoon-Hyun Kwak , Bum-Woo Park , Sun-Young Lee , Wha-Il Choi , So-Yeon Kim , Ji-Youn Lee
IPC分类号： B32B19/00 , H01L51/00 , C07F15/00 , H01L51/50
CPC分类号： H01L51/0087 , C07F15/0026 , C07F15/0033 , C07F15/004 , C07F15/0086 , C07F15/0093 , C09K11/06 , C09K2211/1007 , C09K2211/1022 , C09K2211/1044 , C09K2211/185 , H01L51/0081 , H01L51/0085 , H01L51/0088 , H01L51/5016 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5092 , H01L51/5096
摘要： An organometallic compound may be represented by Formula 1:
摘要翻译：有机金属化合物可以由式1表示：

7. 发明授权

US09006721B2 Organic light-emitting diode 有权
标题翻译：有机发光二极管
公开(公告)号：US09006721B2
公开(公告)日：2015-04-14
申请号：US13942803
申请日：2013-07-16
申请人： Ji-Youn Lee , Yoon-Hyun Kwak , Bum-Woo Park , Sun-Young Lee , Jong-Won Choi , Wha-Il Choi , So-Yeon Kim
发明人： Ji-Youn Lee , Yoon-Hyun Kwak , Bum-Woo Park , Sun-Young Lee , Jong-Won Choi , Wha-Il Choi , So-Yeon Kim
IPC分类号： H01L21/02 , H01L51/00
CPC分类号： H01L51/006 , H01L51/0059 , H01L51/0061 , H01L51/0067 , H01L51/0071 , H01L51/0072 , H01L51/0073 , H01L51/0081 , H01L51/0085 , H01L51/0087 , H01L51/5016 , H01L51/5064
摘要： An organic light-emitting diode includes a substrate, a first electrode on the substrate, a second electrode facing the first electrode, an emission layer interposed between the first electrode and the second electrode, a hole transportation region between the first electrode and the emission layer, and an electron transportation region interposed between the emission layer and the second electrode. The hole transportation region includes a first compound represented by Formula 1 below, and at least one of the hole transportation region and the emission layer includes a second compound represented by Formula 100 below: wherein Ar101, Ar102, xa, xb, R101-R119, Ar50, Ar60, R51-R60 and p are further defined.
摘要翻译：有机发光二极管包括基板，基板上的第一电极，面对第一电极的第二电极，介于第一电极和第二电极之间的发射层，第一电极和发射层之间的空穴传输区域以及插入在发光层和第二电极之间的电子输送区域。空穴传输区域包括由下述通式1表示的第一化合物，并且空穴传输区域和发光层中的至少一个包括由下式100表示的第二化合物：其中Ar 101，Ar 102，xa，xb，R 101-R 119， Ar50，Ar60，R51-R60和p进一步定义。

8. 发明授权

US08027655B2 Receiver apparatus and method for tracking and rejecting transmit signal in wireless communication system 有权
标题翻译：用于在无线通信系统中跟踪和拒绝发射信号的接收机装置和方法
公开(公告)号：US08027655B2
公开(公告)日：2011-09-27
申请号：US12292983
申请日：2008-12-02
申请人： Hee-Hyun Lee , Hoon-Tae Kim , Jong-Won Choi
发明人： Hee-Hyun Lee , Hoon-Tae Kim , Jong-Won Choi
IPC分类号： H04B1/10
CPC分类号： H04B1/525
摘要： A receiver apparatus for tracking and rejecting a Transmit (Tx) signal in a wireless communication system and an operation method thereof are provided. The receiver apparatus includes a controller for receiving channel frequency information of the Tx signal and for controlling an operation for tracking and rejecting a frequency of the Tx signal; a phase locked loop for generating an oscillation frequency by generating a control voltage according to the channel frequency information of the Tx signal under the control of the controller and for filtering a signal corresponding to the oscillation frequency among signals input to a low noise amplifier; and the low noise amplifier for amplifying power while minimizing noise of a signal filtered by the phase locked loop.
摘要翻译：提供了一种用于在无线通信系统中跟踪和拒绝发送（Tx）信号的接收机装置及其操作方法。接收机装置包括：控制器，用于接收Tx信号的信道频率信息，并控制用于跟踪和拒绝Tx信号频率的操作; 用于通过在控制器的控制下根据Tx信号的信道频率信息产生控制电压并且对输入到低噪声放大器的信号中对应于振荡频率的信号进行滤波来产生振荡频率的锁相环; 以及用于放大功率同时最小化由锁相环滤波的信号的噪声的低噪声放大器。

9. 发明授权

US07955888B2 Method of fabricating image sensor having reduced dark current 失效
标题翻译：制造具有降低的暗电流的图像传感器的方法
公开(公告)号：US07955888B2
公开(公告)日：2011-06-07
申请号：US12231101
申请日：2008-08-29
申请人： Hyoun-Min Beak , Tae-Seok Oh , Jong-Won Choi , Su-Young Oh
发明人： Hyoun-Min Beak , Tae-Seok Oh , Jong-Won Choi , Su-Young Oh
IPC分类号： H01L31/10
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14643 , H01L27/14687
摘要： An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a substrate. The field effect transistor is formed in a second region of the substrate. The stress layer pattern is formed over the field effect transistor for creating stress therein to improve transistor performance. The surface passivation material is formed on the first region of the substrate for passivating dangling bonds at the surface of the light receiving device.
摘要翻译：图像传感器包括光接收装置，场效应晶体管，应力层图案和表面钝化材料。光接收装置形成在基板的第一区域中。场效应晶体管形成在衬底的第二区域中。应力层图案形成在场效应晶体管上，用于在其中产生应力以改善晶体管性能。表面钝化材料形成在基板的第一区域上，以在光接收装置的表面处钝化悬挂键。

10. 发明授权

US08999528B2 Condensation compound and organic light emitting device including the same 有权
标题翻译：缩合化合物和包括其的有机发光器件
公开(公告)号：US08999528B2
公开(公告)日：2015-04-07
申请号：US13736389
申请日：2013-01-08
申请人： So-Yeon Kim , Yoon-Hyun Kwak , Bum-Woo Park , Jong-Won Choi , Wha-Il Choi , Sun-Young Lee , Ji-Youn Lee , Jin-Young Yun
发明人： So-Yeon Kim , Yoon-Hyun Kwak , Bum-Woo Park , Jong-Won Choi , Wha-Il Choi , Sun-Young Lee , Ji-Youn Lee , Jin-Young Yun
IPC分类号： H01L51/54 , H01L51/00 , H01L51/50
CPC分类号： H01L51/0074 , H01L51/0058 , H01L51/0061 , H01L51/0072 , H01L51/0073 , H01L51/0081 , H01L51/0087 , H01L51/5012 , H01L51/5056 , H01L51/5092 , H01L2251/308 , Y10S428/917
摘要： A condensation compound is represented by Formula 1, 2, or 3 where R1 to R24 and A to F are further defined in the detailed description.
摘要翻译：缩合化合物由式1,2或3表示，其中在详细描述中进一步定义R 1至R 24和A至F.

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