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1. 发明授权

US09349651B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09349651B2
公开(公告)日：2016-05-24
申请号：US14802643
申请日：2015-07-17
申请人： Jong-Su Kim , Hee-Young Go , Sang-Jin Kim , Yong-Kug Bae , Il-Young Yoon
发明人： Jong-Su Kim , Hee-Young Go , Sang-Jin Kim , Yong-Kug Bae , Il-Young Yoon
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/82 , H01L29/66 , H01L21/66 , H01L23/544 , H01L21/762
CPC分类号： H01L21/76224 , H01L22/30 , H01L23/544 , H01L2223/54426 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a substrate including a circuit region and a scribe lane region, an active fin protruding from the substrate in the circuit region, a first gate structure extending over the active fin in the circuit region, and a second gate structure formed in the scribe lane region.
摘要翻译：提供一种半导体器件及其制造方法。该半导体器件包括：基板，包括电路区域和刻划通道区域;从电路区域中的基板突出的有源鳍片;在该电路区域中的有源鳍片上延伸的第一栅极结构;以及第二栅极结构，划线车道区域。

2. 发明授权

US08691693B2 Methods of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08691693B2
公开(公告)日：2014-04-08
申请号：US13290285
申请日：2011-11-07
申请人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Do-Hyoung Kim , Dong-Woon Park
发明人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Do-Hyoung Kim , Dong-Woon Park
IPC分类号： H01L21/44 , H01L29/40
CPC分类号： H01L21/76895 , H01L21/28518 , H01L21/31144 , H01L21/76897 , H01L21/823418 , H01L21/823475 , H01L21/823481 , H01L29/66545 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： In a method of manufacturing a semiconductor device, a first etching mask and a second etching mask are formed sequentially on a metal gate structure on a substrate and a first insulating interlayer covering a sidewall of the metal gate structure respectively. An opening is formed to expose a top surface of the substrate by removing a portion of the first insulating interlayer not overlapped with the first etching mask or the second etching mask. A metal silicide pattern is formed on the exposed top surface of the substrate. A plug on the metal silicide pattern is formed to fill a remaining portion of the opening. Further, a planarization layer may be used as the second etching mask.
摘要翻译：在制造半导体器件的方法中，依次在基板上的金属栅极结构和覆盖金属栅极结构的侧壁的第一绝缘夹层上形成第一蚀刻掩模和第二蚀刻掩模。通过除去与第一蚀刻掩模或第二蚀刻掩模不重叠的第一绝缘夹层的一部分，形成开口以暴露基板的顶表面。在衬底的暴露的顶表面上形成金属硅化物图案。形成金属硅化物图案上的塞子以填充开口的剩余部分。此外，可以使用平坦化层作为第二蚀刻掩模。

3. 发明授权

US08563383B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08563383B2
公开(公告)日：2013-10-22
申请号：US13252621
申请日：2011-10-04
申请人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Myeong-Cheol Kim , Do-Hyoung Kim
发明人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Myeong-Cheol Kim , Do-Hyoung Kim
IPC分类号： H01L21/336
CPC分类号： H01L21/823425 , H01L21/823437 , H01L29/66545 , H01L29/66628 , H01L29/7834
摘要： A method of manufacturing a semiconductor device includes forming a plurality of gate structures including a metal on a substrate having an isolation layer, forming first insulating interlayer patterns covering sidewalls of the gate structures, forming first capping layer patterns and a second capping layer pattern on the gate structures and the first insulating interlayer patterns, the first capping layer patterns covering upper faces of the gate structures, and the second capping layer pattern overlapping the isolation layer, partially removing the first insulating interlayer patterns using the first and the second capping layer patterns as etching masks to form first openings that expose portions of the substrate, forming metal silicide patterns on the portions of the substrate exposed in the forming of the first openings, and forming conductive structures on the metal silicide patterns.
摘要翻译：制造半导体器件的方法包括在具有隔离层的衬底上形成包括金属的多个栅极结构，形成覆盖栅极结构的侧壁的第一绝缘层间图案，形成第一覆盖层图案和第二覆盖层图案栅极结构和第一绝缘层间图案，第一覆盖层图案覆盖栅极结构的上表面，第二覆盖层图案与隔离层重叠，使用第一和第二覆盖层图案部分地去除第一绝缘层间图案，如蚀刻掩模以形成暴露基板部分的第一开口，在形成第一开口的裸露部分上形成金属硅化物图案，并在金属硅化物图案上形成导电结构。

4. 发明申请

US20120122286A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120122286A1
公开(公告)日：2012-05-17
申请号：US13290285
申请日：2011-11-07
申请人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Do-Hyoung Kim , Dong-Woon Park
发明人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Do-Hyoung Kim , Dong-Woon Park
IPC分类号： H01L21/336 , H01L21/768
CPC分类号： H01L21/76895 , H01L21/28518 , H01L21/31144 , H01L21/76897 , H01L21/823418 , H01L21/823475 , H01L21/823481 , H01L29/66545 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： In a method of manufacturing a semiconductor device, a first etching mask and a second etching mask are formed sequentially on a metal gate structure on a substrate and a first insulating interlayer covering a sidewall of the metal gate structure respectively. An opening is formed to expose a top surface of the substrate by removing a portion of the first insulating interlayer not overlapped with the first etching mask or the second etching mask. A metal silicide pattern is formed on the exposed top surface of the substrate. A plug on the metal silicide pattern is formed to fill a remaining portion of the opening. Further, a planarization layer may be used as the second etching mask.
摘要翻译：在制造半导体器件的方法中，依次在基板上的金属栅极结构和覆盖金属栅极结构的侧壁的第一绝缘夹层上形成第一蚀刻掩模和第二蚀刻掩模。通过除去与第一蚀刻掩模或第二蚀刻掩模不重叠的第一绝缘夹层的一部分，形成开口以暴露基板的顶表面。在衬底的暴露的顶表面上形成金属硅化物图案。形成金属硅化物图案上的塞子以填充开口的剩余部分。此外，可以使用平坦化层作为第二蚀刻掩模。

5. 发明授权

US10590544B2 Pickling and passive film treating agent for removing scales and rusts on welding parts of stainless steel pipes and structures 有权
公开(公告)号：US10590544B2
公开(公告)日：2020-03-17
申请号：US15875309
申请日：2018-01-19
申请人： Sung-Sik Park , Sang-Jin Kim
发明人： Sung-Sik Park , Sang-Jin Kim
IPC分类号： C23C22/07 , C23G1/08 , C23G1/24 , C23C22/78 , C23C22/68 , C02F5/08 , C23G1/26
摘要： A composition for pickling a welded portion and a rust-generated portion according to installation of pipes, structures, plants, and so on formed of stainless steel, and for forming a passive state film thereon is provided. More particularly, the present disclosure relates to a neutral agent for passivating a surface of stainless steel metal in which a neutral agent is obtained by neutralizing a basic aqueous solution to 6.9 pH to 7.1 pH and aerated with carbon dioxide-free air to increase the amount of dissolved oxygen, so that an oxidation reduction potential in a range of 170 mV to 310 mV is obtained.

6. 发明授权

US08750505B2 Apparatus and method for controlling conversion of broadcasting program based on program protection information 失效
标题翻译：基于程序保护信息控制广播节目转换的装置和方法
公开(公告)号：US08750505B2
公开(公告)日：2014-06-10
申请号：US13125778
申请日：2009-10-21
申请人： Hyon-Gon Choo , Jeho Nam , Sangwoo Ahn , Jooyoung Lee , Moon-Kyun Oh , Jin-Woo Hong , Won-Sik Cheong , Sang-Kwon Shin , Keunsik Lee , Byung-Sun Kim , Hee-Young Jun , Sang-Gyou Lee , Sang-Jin Kim , Sung-Jun Ahn , Sung-Hwan Park , Jooho Song
发明人： Hyon-Gon Choo , Jeho Nam , Sangwoo Ahn , Jooyoung Lee , Moon-Kyun Oh , Jin-Woo Hong , Won-Sik Cheong , Sang-Kwon Shin , Keunsik Lee , Byung-Sun Kim , Hee-Young Jun , Sang-Gyou Lee , Sang-Jin Kim , Sung-Jun Ahn , Sung-Hwan Park , Jooho Song
IPC分类号： H04L9/00
CPC分类号： H04N5/913 , H04N9/8042 , H04N21/4334 , H04N21/4405 , H04N21/4623 , H04N21/4627 , H04N2005/91364
摘要： Provided are an apparatus and method for controlling program conversion according to program protection information. The method for controlling conversion of a broadcasting program includes: demultiplexing a broadcasting program into broadcasting program data and program protection information; encrypting the broadcasting program data based on distribution condition of the program protection information when recordation of the broadcasting program data is requested; and recording the encrypted broadcasting program data.
摘要翻译：提供了一种根据程序保护信息来控制程序转换的装置和方法。用于控制广播节目的转换的方法包括：将广播节目解复用为广播节目数据和节目保护信息; 在请求广播节目数据的记录时，基于节目保护信息的分配条件来加密广播节目数据; 并记录加密的广播节目数据。

7. 发明授权

US08141989B2 Ink-jet head and method for manufacturing the same 有权
标题翻译：喷墨头及其制造方法
公开(公告)号：US08141989B2
公开(公告)日：2012-03-27
申请号：US12505291
申请日：2009-07-17
申请人： Sang-Jin Kim , Young-Seuck Yoo
发明人： Sang-Jin Kim , Young-Seuck Yoo
IPC分类号： B41J2/045
CPC分类号： B41J2/161 , B41J2/1629
摘要： An ink-jet head and a method for manufacturing the ink-jet head are disclosed. The ink-jet head can include: a chamber, which may house a type of ink; a membrane, which may be formed on one side of the chamber, and in a surface of which a holding cavity may be formed; a lower electrode, formed on an inner surface of the holding cavity; and a piezoelectric component, held in the holding cavity. According to certain embodiments of the invention, the ink-jet head can be formed with thin-film type actuators, and the electrical properties of the ink-jet head can be improved.
摘要翻译：公开了喷墨头和喷墨头的制造方法。喷墨头可以包括：可容纳一种油墨的室; 膜可以形成在室的一侧上，并且在其表面中可以形成保持腔; 形成在所述保持腔的内表面上的下电极; 以及保持在保持腔中的压电元件。根据本发明的某些实施例，喷墨头可以由薄膜型致动器形成，并且可以提高喷墨头的电气特性。

8. 发明授权

US07950150B2 Method of manufacturing inkjet head 有权
标题翻译：制造喷墨头的方法
公开(公告)号：US07950150B2
公开(公告)日：2011-05-31
申请号：US12435887
申请日：2009-05-05
申请人： Young-Seuck Yoo , Jae-Woo Joung , Sang-Jin Kim , Won-Chul Sim , Chang-Sung Park
发明人： Young-Seuck Yoo , Jae-Woo Joung , Sang-Jin Kim , Won-Chul Sim , Chang-Sung Park
IPC分类号： B21D53/76 , B23P17/00 , H01L41/22 , H04R17/00 , B41J2/15 , B41J2/145 , B28B7/04
CPC分类号： B41J2/1606 , B41J2/161 , B41J2/1623 , Y10T29/42 , Y10T29/49401
摘要： Disclosed is a method of manufacturing an inkjet head discharging ink. The method in accordance with an embodiment of the present invention can include: heating the inkjet head to a temperature over a melting point of a filler; filling the inkjet head with the filler such that a gap inside the inkjet head is filled with the filler; and discharging the filler out of the inkjet head such that the filler in the gap of the inkjet head remains.
摘要翻译：公开了一种喷墨头喷墨方法。根据本发明的实施例的方法可以包括：将喷墨头加热至超过填料的熔点的温度; 用填料填充喷墨头，使得喷墨头内部的间隙填充有填料; 并将填料从喷墨头喷出，使得喷墨头的间隙中的填料残留。

9. 发明授权

US07867747B2 Fibrinolytic metalloprotease and composition comprising the same 有权
标题翻译：纤维蛋白溶解金属蛋白酶及其组合物
公开(公告)号：US07867747B2
公开(公告)日：2011-01-11
申请号：US12097892
申请日：2006-11-08
申请人： Sang-Hyeon Lee , Dong-Geun Lee , Jeong-Ho Jeon , Nam-Young Kim , Jung-Hyun Lee , Sang-Jin Kim , Min-Kyung Jang
发明人： Sang-Hyeon Lee , Dong-Geun Lee , Jeong-Ho Jeon , Nam-Young Kim , Jung-Hyun Lee , Sang-Jin Kim , Min-Kyung Jang
IPC分类号： C12N9/50 , C12N15/57 , C12N15/70 , A61K38/48
CPC分类号： C12N9/50
摘要： The present invention relates to a novel protease, a polynucleotide encoding the protease, and a fibrinolytic agent comprising the same. The protease is obtained from a new gene source by using metagenomic library technology, and can replace the conventional fibrinolytic agent.
摘要翻译：本发明涉及一种新的蛋白酶，一种编码该蛋白酶的多核苷酸，以及包含该蛋白酶的纤维蛋白溶解剂。蛋白酶通过使用宏基因组文库技术从新的基因来源获得，并且可以代替常规的纤维蛋白溶解剂。

10. 发明授权

US07485395B2 Negative active material for rechargeable lithium battery and method of preparing same 有权
标题翻译：可充电锂电池负极活性物质及其制备方法
公开(公告)号：US07485395B2
公开(公告)日：2009-02-03
申请号：US10743910
申请日：2003-12-24
申请人： Sang-Jin Kim , Kyou-Yoon Sheem , Joon-Sup Kim
发明人： Sang-Jin Kim , Kyou-Yoon Sheem , Joon-Sup Kim
IPC分类号： H01M4/58 , H01M4/60
CPC分类号： H01M4/583 , H01M4/133 , H01M4/1393 , H01M10/0525 , H01M2004/021
摘要： A negative active material of a rechargeable lithium battery includes a crystalline carbon core having an intensity ratio Ra I(1360)/I(1580) of a Raman Spectroscopy peak intensity I(1360) at a (1360) plane to an Raman Spectroscopy peak intensity I(1580) at a (1580) plane of 0.01 to 0.45 and a shell with a turbostratic or half-onion ring structure coated on the core, the shell including crystalline micro-particles and a semi-crystalline carbon, the shell having an intensity ratio Ra I(1360)/I(1580) of a Raman Spectroscopy peak intensity I(1360) at a (1360) plane to a Raman Spectroscopy peak intensity I(1580) at a (1580) plane of 0.46 to 1.5.
摘要翻译：可再充电锂电池的负极活性物质包括在（1360）面上的拉曼光谱峰强度I（1360）与拉曼光谱峰强度的强度比Ra I（1360）/ I（1580）的结晶碳芯 I（1580）在0.01至0.45的（1580）平面上，并且具有涂覆在芯上的涡旋或半洋葱环结构的壳，壳包含结晶微粒和半结晶碳，壳具有强度（1360）处的拉曼光谱峰强度I（1360）与（1580）平面处的拉曼光谱峰强度I（1580）的比值Ra I（1360）/ I（1580）为0.46〜1.5。

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