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1. 发明申请

US20060148141A1 Method of manufacturing a flexible thin film transistor array panel including plastic substrate 有权
公开(公告)号：US20060148141A1
公开(公告)日：2006-07-06
申请号：US11325156
申请日：2006-01-03
申请人： Jong-Hyun Seo , Tae-Young Choi
发明人： Jong-Hyun Seo , Tae-Young Choi
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L27/124 , H01L29/456 , H01L29/4908 , H01L29/78603
摘要： A method of manufacturing a flexible display is provided, which includes forming a gate line including a gate electrode on a substrate, sequentially depositing a gate insulating layer covering the gate line, and a semiconductor layer, firstly etching the semiconductor layer; secondly etching the semiconductor layer, forming a data line including a source electrode, and a drain electrode on the semiconductor layer and the gate insulating layer; and forming a pixel electrode connected to the drain electrode.

2. 发明授权

US07507616B2 Method of manufacturing a flexible thin film transistor array panel including plastic substrate 有权
标题翻译：制造包括塑料基板的柔性薄膜晶体管阵列面板的方法
公开(公告)号：US07507616B2
公开(公告)日：2009-03-24
申请号：US11325156
申请日：2006-01-03
申请人： Jong-Hyun Seo , Tae-Young Choi
发明人： Jong-Hyun Seo , Tae-Young Choi
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L27/124 , H01L29/456 , H01L29/4908 , H01L29/78603
摘要： A method of manufacturing a flexible display is provided, which includes forming a gate line including a gate electrode on a substrate, sequentially depositing a gate insulating layer covering the gate line, and a semiconductor layer, firstly etching the semiconductor layer; secondly etching the semiconductor layer, forming a data line including a source electrode, and a drain electrode on the semiconductor layer and the gate insulating layer; and forming a pixel electrode connected to the drain electrode.
摘要翻译：提供一种柔性显示器的制造方法，其包括在基板上形成栅极线，栅极线依次形成覆盖栅极线的栅极绝缘层和半导体层，首先蚀刻半导体层; 其次蚀刻半导体层，在半导体层和栅极绝缘层上形成包括源电极和漏电极的数据线; 以及形成连接到所述漏电极的像素电极。

3. 发明授权

US08969107B2 Method of manufacturing a nano-rod and method of manufacturing a display substrate 有权
标题翻译：纳米棒的制造方法和显示基板的制造方法
公开(公告)号：US08969107B2
公开(公告)日：2015-03-03
申请号：US13424155
申请日：2012-03-19
申请人： Tae-Young Choi , Bo-Sung Kim , Kwang-Yeol Lee , See-Won Kim
发明人： Tae-Young Choi , Bo-Sung Kim , Kwang-Yeol Lee , See-Won Kim
IPC分类号： H01L21/00 , C01B13/32 , B82Y30/00 , B82Y40/00 , C01G9/02 , C01G1/02
CPC分类号： C01B13/32 , B82Y30/00 , B82Y40/00 , C01G1/02 , C01G9/02 , C01P2004/04 , C01P2004/16 , C01P2004/61 , C01P2004/62 , C01P2004/64
摘要： A method of manufacturing a nano-rod and a method of manufacturing a display substrate in which a seed including a metal oxide is formed. A nano-rod is formed by reacting the seed with a metal precursor in an organic solvent. Therefore, the nano-rod may be easily formed, and a manufacturing reliability of the nano-rod and a display substrate using the nano-rod may be improved.
摘要翻译：纳米棒的制造方法以及其中形成有包含金属氧化物的种子的显示基板的制造方法。通过使种子与有机溶剂中的金属前体反应形成纳米棒。因此，可以容易地形成纳米棒，并且可以提高纳米棒的制造可靠性和使用纳米棒的显示基板。

4. 发明申请

US20110140094A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20110140094A1
公开(公告)日：2011-06-16
申请号：US12823043
申请日：2010-06-24
申请人： Tae-Young Choi , Hi-Kuk Lee , Bo-Sung Kim , Young-Min Kim , Seung-Hwan Cho , Young-Soo Yoon , Yeon-Taek Jeong , Seon-Pil Jang
发明人： Tae-Young Choi , Hi-Kuk Lee , Bo-Sung Kim , Young-Min Kim , Seung-Hwan Cho , Young-Soo Yoon , Yeon-Taek Jeong , Seon-Pil Jang
IPC分类号： H01L27/12 , H01L21/84 , H01L21/34 , H01L29/12
CPC分类号： H01L29/66765 , H01L21/02554 , H01L21/02565 , H01L27/1225 , H01L29/7869
摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer
摘要翻译：根据本发明的示例性实施例的薄膜晶体管阵列面板包括：栅极，设置在绝缘基板上; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体; 设置在所述半导体上的蚀刻停止层; 设置在所述栅极绝缘层上的绝缘层; 以及与半导体重叠的源电极和漏电极。半导体和栅极绝缘层具有其上设置有蚀刻停止层和绝缘层的第一部分，以及不设置蚀刻停止层和绝缘层的第二部分。源电极和漏极设置在半导体的第二部分和栅极绝缘层上

5. 发明申请

US20100308326A1 THIN-FILM TRANSISTOR ARRAY PANEL AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20100308326A1
公开(公告)日：2010-12-09
申请号：US12790188
申请日：2010-05-28
申请人： Young-Min KIM , Bo-Sung Kim , Yeon-Taek Jeong , Tae-Young Choi , Seon-Pil Jang , Seung-Hwan Cho , Bo-Kyoung Ahn , Byeong-Soo Bae , Seok-Jun Seo
发明人： Young-Min KIM , Bo-Sung Kim , Yeon-Taek Jeong , Tae-Young Choi , Seon-Pil Jang , Seung-Hwan Cho , Bo-Kyoung Ahn , Byeong-Soo Bae , Seok-Jun Seo
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L27/1225 , H01L21/02554 , H01L21/02565 , H01L21/02628 , H01L29/7869
摘要： A thin-film transistor array panel includes: an insulating substrate; an oxide semiconductor layer that is formed on the insulating substrate and includes a metal inorganic salt and zinc acetate; a gate electrode overlapping with the oxide semiconductor layer; a gate insulating film that is interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode that at least partially overlap the oxide semiconductor layer and are separated from each other.
摘要翻译：薄膜晶体管阵列面板包括：绝缘基板; 形成在所述绝缘基板上并且包括金属无机盐和乙酸锌的氧化物半导体层; 栅电极与氧化物半导体层重叠; 介于氧化物半导体层和栅电极之间的栅极绝缘膜; 以及与氧化物半导体层至少部分重叠并且彼此分离的源电极和漏电极。

6. 发明授权

US07569851B2 Organic thin film transistor array panels 有权
标题翻译：有机薄膜晶体管阵列面板
公开(公告)号：US07569851B2
公开(公告)日：2009-08-04
申请号：US11541254
申请日：2006-09-29
申请人： Keun-Kyu Song , Tae-Young Choi
发明人： Keun-Kyu Song , Tae-Young Choi
IPC分类号： H01L51/10
CPC分类号： H01L27/283 , H01L27/1214 , H01L27/3244 , H01L51/0516 , H01L51/0545
摘要： An organic thin film transistor (OTFT) array panel includes a substrate, a data line formed on the substrate, a source electrode connected with the data line, a drain electrode, including a portion facing the source electrode, an insulating layer formed on the source electrode and the drain electrode and having an opening and a contact hole, an organic semiconductor positioned in the opening and at least partially contacting the source electrode and the drain electrode, a gate insulator formed on the organic semiconductor, a stopper formed on the gate insulator, a gate line crossing over the data line and including a gate electrode formed on the stopper, and a pixel electrode connected to the drain electrode through the contact hole.
摘要翻译：有机薄膜晶体管（OTFT）阵列面板包括基板，形成在基板上的数据线，与数据线连接的源电极，漏电极，包括面对源电极的部分，形成在源极上的绝缘层电极和漏极，并具有开口和接触孔，位于开口中并且至少部分地接触源电极和漏电极的有机半导体，形成在有机半导体上的栅极绝缘体，形成在栅极绝缘体上的阻挡层在数据线上交叉并且包括形成在该止动器上的栅极电极的栅极线以及通过接触孔与漏电极连接的像素电极。

7. 发明申请

US20070158651A1 Making organic thin film transistor array panels 有权
标题翻译：制造有机薄膜晶体管阵列面板
公开(公告)号：US20070158651A1
公开(公告)日：2007-07-12
申请号：US11541254
申请日：2006-09-29
申请人： Keun-Kyu Song , Tae-Young Choi
发明人： Keun-Kyu Song , Tae-Young Choi
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L27/283 , H01L27/1214 , H01L27/3244 , H01L51/0516 , H01L51/0545
摘要： An organic thin film transistor (OTFT) array panel includes a substrate, a data line formed on the substrate, a source electrode connected with the data line, a drain electrode, including a portion facing the source electrode, an insulating layer formed on the source electrode and the drain electrode and having an opening and a contact hole, an organic semiconductor positioned in the opening and at least partially contacting the source electrode and the drain electrode, a gate insulator formed on the organic semiconductor, a stopper formed on the gate insulator, a gate line crossing over the data line and including a gate electrode formed on the stopper, and a pixel electrode connected to the drain electrode through the contact hole.
摘要翻译：有机薄膜晶体管（OTFT）阵列面板包括基板，形成在基板上的数据线，与数据线连接的源电极，漏电极，包括面对源电极的部分，形成在源极上的绝缘层电极和漏极，并具有开口和接触孔，位于开口中并且至少部分地接触源电极和漏电极的有机半导体，形成在有机半导体上的栅极绝缘体，形成在栅极绝缘体上的阻挡层在数据线上交叉并且包括形成在该止动器上的栅极电极的栅极线以及通过接触孔与漏电极连接的像素电极。

8. 发明授权

US08753920B2 Precursor composition for oxide semiconductor and method of manufacturing thin film transistor array panel using the same 有权
标题翻译：使用相同的对氧化物半导体制造薄膜晶体管阵列面板的方法前体组合物
公开(公告)号：US08753920B2
公开(公告)日：2014-06-17
申请号：US13195444
申请日：2011-08-01
申请人： Bo Sung Kim , Doo-Hyoung Lee , Yeon-Taek Jeong , Ki-Beom Lee , Young-Min Kim , Tae-Young Choi , Seon-Pil Jang , Kang-Moon Jo
发明人： Bo Sung Kim , Doo-Hyoung Lee , Yeon-Taek Jeong , Ki-Beom Lee , Young-Min Kim , Tae-Young Choi , Seon-Pil Jang , Kang-Moon Jo
IPC分类号： H01L21/36
CPC分类号： H01L21/02628 , H01L21/02554 , H01L21/02565
摘要： Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1. MAn (Formula 1) Herein, M is a metal ion, A is an organic ligand which includes α-substituted carboxylate, and n is a natural number.
摘要翻译：提供一种用于氧化物半导体的前体组合物。用于氧化物半导体的前体组合物包括由金属离子和有机配体形成的金属络合物，其中前体组合物由下式1表示。MAn（式1）这里，M是金属离子，A是包括α-取代的羧酸酯的有机配体，n是自然数。

9. 发明授权

US08633498B2 Display substrate and method of manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US08633498B2
公开(公告)日：2014-01-21
申请号：US13112381
申请日：2011-05-20
申请人： Tae-Young Choi , Kang-Moon Jo , Bo-Sung Kim , Young-Min Kim
发明人： Tae-Young Choi , Kang-Moon Jo , Bo-Sung Kim , Young-Min Kim
IPC分类号： H01L29/18
CPC分类号： H01L27/1288 , H01L27/1225 , H01L27/1292
摘要： A display substrate includes a base substrate, a data line, a gate line, a switching element, a self assembled monolayer (SAM) and a pixel electrode. The data line is formed on the base substrate. The gate line is formed across the data line. The switching element includes a source electrode electrically connected to the data line, a drain electrode spaced apart from the source electrode, a semiconductor pattern covering the source and drain electrodes, and a gate electrode electrically connected to the gate line and facing the semiconductor pattern. The SAM is disposed around the semiconductor pattern and a conductive pattern including the data line. The pixel electrode is electrically connected to the switching element.
摘要翻译：显示基板包括基底基板，数据线，栅极线，开关元件，自组装单层（SAM）和像素电极。数据线形成在基底基板上。栅极线跨越数据线形成。开关元件包括电连接到数据线的源电极，与源电极间隔开的漏电极，覆盖源电极和漏电极的半导体图案，以及电连接到栅极线并面向半导体图案的栅电极。 SAM围绕半导体图案设置，并且包括数据线的导电图案。像素电极电连接到开关元件。

10. 发明授权

US08252626B2 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08252626B2
公开(公告)日：2012-08-28
申请号：US12820024
申请日：2010-06-21
申请人： Seung-Hwan Cho , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Min-Ho Yoon , Jung-Hun Noh
发明人： Seung-Hwan Cho , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Min-Ho Yoon , Jung-Hun Noh
IPC分类号： H01L51/40
CPC分类号： H01L51/0541 , H01L51/0023 , H01L51/102
摘要： A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.
摘要翻译：一种薄膜晶体管阵列板的制造方法，包括形成栅电极，在栅电极上形成绝缘层，在绝缘层上依次形成下导电层和上导电层，蚀刻上导电层以形成第一源电极和第一漏电极，蚀刻下导电层以形成第二源电极和第二漏电极，过蚀刻第二源电极和第二漏电极，以及在第二源电极和第二漏电极之间形成有机半导体第二漏电极。

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