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    • 3. 发明申请
    • CUFF FOR A BLOOD PRESSURE METER
    • 血压计CUFF
    • US20130102910A1
    • 2013-04-25
    • US13808082
    • 2011-07-05
    • Jong-Eun ParkJae-Soon Cha
    • Jong-Eun ParkJae-Soon Cha
    • A61B5/022
    • A61B5/02233A61B5/022
    • A cuff for a blood pressure meter which is jointed to a blood pressure for measuring blood pressure and is worn on the body to compress a blood pressure measurement site, and which comprises: a cuff band which is worn around the blood pressure measurement site of the body and is provided with an expansion bladder that expands on the inside; a fluid supply apparatus which is connected to the cuff band and supplies a fluid so as to make the expansion bladder expand; and a bladder separator which is provided in the cuff band and splits the expansion bladder, that is expanded by means of the fluid supply apparatus, into at least two or more pats so as to effect split expansion of the same. When the present invention is employed, because the expansion bladder which compresses the blood pressure measurement site is split by means of the ladder separator, there is the advantageous effect that it expands and contracts to a length and width that match the firth of the blood pressure measurement site and accurate blood pressure measurement can be taken.
    • 一种用于血压计的袖带,其连接到用于测量血压的血压并佩戴在身体上以压缩血压测量部位,并且包括:围绕血压测量部位周围的袖带, 并且设置有在内侧膨胀的膨胀囊; 流体供应装置,其连接到袖带并且供应流体以使膨胀囊膨胀; 以及膀胱分离器,其设置在所述袖带中,并且将所述膨胀囊分离成膨胀囊,所述膨胀囊通过所述流体供给装置膨胀成至少两个或更多个,以实现所述膨胀囊的分裂膨胀。 当采用本发明时,由于压缩血压测量部位的膨胀囊通过梯形分离器分离,所以有利的效果是它膨胀并收缩到与血压的比例相匹配的长度和宽度 可以进行测量部位和精确的血压测量。
    • 5. 发明申请
    • DEVICE FOR EXAMINING NERVE FUNCTION
    • 用于检查神经功能的装置
    • US20130066216A1
    • 2013-03-14
    • US13698586
    • 2011-04-15
    • Jong-Eun Park
    • Jong-Eun Park
    • A61B5/00A61B5/026A61B5/0205
    • A61B5/4005A43B3/0015A43B7/025A43B7/146A43B7/147A61B5/01A61B5/0205A61B5/026A61B5/14551A61B5/4047A61B5/4827A61B5/483A61B5/6804A61B5/6806A61B5/6807A61B5/6825A61B5/6829
    • The present invention relates to a device for examining nerve function. In order to examine the function of a nerve of the human body, the device for examining nerve function of the present invention includes: at least one stimulator for stimulating the human body; and a stimulator-fixing member having a form corresponding to the hands or feet of the human body, wherein the stimulator is located at one side of the simulator-fixing member so as to fix the stimulator to the hands or feet of the human body. The device for examining nerve function of the present invention further includes at least one blood-circulation detection sensor fixed at the stimulator-fixing member. According to the present invention, since the degree of hypoesthesia is examined through the stimulation of the stimulator, test accuracy and reliability may be greatly improved and it is possible to systematically and actively determine a diagnosis and course of treatment for a patient having diabetes or spinal nerve damage, e.g. hypoesthesia.
    • 本发明涉及一种用于检查神经功能的装置。 为了检查人体的神经的功能,本发明的检查神经功能的装置包括:至少一个用于刺激人体的刺激器; 以及刺激器固定构件,其具有与人体的手或脚对应的形式,其中所述刺激器位于所述模拟器固定构件的一侧,以将所述刺激器固定在人体的手或脚上。 用于检查本发明的神经功能的装置还包括固定在刺激器固定构件上的至少一个血液循环检测传感器。 根据本发明,由于通过刺激器的刺激来检查感觉不足的程度,因此可以大大提高测试精度和可靠性,并且可以系统地主动地确定患有糖尿病或脊髓的患者的诊断和治疗过程 神经损伤,例如 感觉不足
    • 7. 发明申请
    • METHODS OF FABRICATING CMOS IMAGE SENSORS
    • 制作CMOS图像传感器的方法
    • US20080182354A1
    • 2008-07-31
    • US11950249
    • 2007-12-04
    • Jong-Jin LeeJu-Hyun KoJong-Eun ParkHyun-Suk KimDong-Yoon Jang
    • Jong-Jin LeeJu-Hyun KoJong-Eun ParkHyun-Suk KimDong-Yoon Jang
    • H01L31/18
    • H01L27/14643H01L27/14603H01L27/1463H01L27/14681H01L27/14689
    • CMOS image sensors and related methods of fabricating CMOS image sensors are disclosed. Fabrication of a CMOS image sensor can include forming a first impurity region having a first conductivity type in a semiconductor substrate. A second impurity region having a second conductivity type is formed in the semiconductor substrate adjacent to the first impurity region. A third impurity region having the first conductivity type is formed in the semiconductor substrate and located below the second impurity region. A transfer gate is formed on the semiconductor substrate and at least partially overlaps the first, second, and third impurity regions. A photo sensitive device is formed in the semiconductor substrate and adjacent to one side of the transfer gate. A floating diffusion region is formed in the semiconductor substrate and located adjacent to an opposite side of the transfer gate from the photosensitive device.
    • 公开了CMOS图像传感器和制造CMOS图像传感器的相关方法。 CMOS图像传感器的制造可以包括在半导体衬底中形成具有第一导电类型的第一杂质区域。 在与第一杂质区相邻的半导体衬底中形成具有第二导电类型的第二杂质区。 具有第一导电类型的第三杂质区形成在半导体衬底中并位于第二杂质区的下方。 传输栅极形成在半导体衬底上并且至少部分地与第一,第二和第三杂质区重叠。 光敏元件形成在半导体衬底中并与传输门的一侧相邻。 浮动扩散区域形成在半导体衬底中并且位于与传感栅极的与光敏器件相反的一侧。
    • 9. 发明申请
    • Image sensors and image sensing methods selecting photocurrent paths according to incident light
    • 图像传感器和图像感测方法根据入射光选择光电流路径
    • US20080012973A1
    • 2008-01-17
    • US11806594
    • 2007-06-01
    • Jong-Eun ParkYong-Jei Lee
    • Jong-Eun ParkYong-Jei Lee
    • H04N5/335
    • H04N5/335H04N5/378
    • Example embodiments may be directed to CMOS image sensors and image sensing methods selecting a path for photocurrent according to the quantity or amount of incident light. The CMOS image sensor may include a pixel array comprised of a plurality of pixel pairs. A pixel pair may include a first pixel, including a first photo diode, a first pair of transistors, and a first floating diffusion node having a first capacitance. The pixel pair may further include a second pixel, including a second photo diode, a second pair of transistors, and a second floating diffusion node having a second capacitance. A first one of the first pair of transistors may be connected between the first photo diode and the first floating diffusion node. A second one of the first pair of transistors may be connected between the first photo diode and the second floating diffusion node. A first one of the second pair of transistors may be connected between the second photo diode and the second floating diffusion node. A second one of the second pair of transistors may be connected between the second photo diode and a first floating diffusion node of a next pixel pair. The first capacitance of the first floating diffusion node may be greater than the second capacitance of the second floating diffusion node.
    • 示例性实施例可以针对CMOS图像传感器和图像感测方法,其根据入射光的量或量选择光电流的路径。 CMOS图像传感器可以包括由多个像素对组成的像素阵列。 像素对可以包括第一像素,包括第一光电二极管,第一对晶体管和具有第一电容的第一浮动扩散节点。 像素对还可以包括第二像素,包括第二光电二极管,第二对晶体管和具有第二电容的第二浮动扩散节点。 第一对晶体管中的第一对可以连接在第一光电二极管和第一浮动扩散节点之间。 第一对晶体管中的第二对可以连接在第一光电二极管和第二浮动扩散节点之间。 第二对晶体管中的第一对可以连接在第二光电二极管和第二浮动扩散节点之间。 第二对晶体管中的第二对可以连接在第二光电二极管和下一个像素对的第一浮动扩散节点之间。 第一浮动扩散节点的第一电容可以大于第二浮动扩散节点的第二电容。