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    • 3. 发明授权
    • CMOS image sensor and method for fabricating the same
    • CMOS图像传感器及其制造方法
    • US07439095B2
    • 2008-10-21
    • US11320702
    • 2005-12-30
    • Jong Woon Choi
    • Jong Woon Choi
    • H01L21/00
    • H01L27/14685H01L27/14627H01L27/14636
    • A CMOS image sensor includes a substrate including a sensing part and a peripheral driving part; a first insulating interlayer formed over an entire surface of the substrate; a first metal line formed on the first insulating interlayer in each of the sensing and peripheral driving parts; a second insulating interlayer formed over the entire surface of the substrate including the first metal line; a second metal line formed on the second insulating interlayer in each of the sensor and peripheral drive parts; an etch-stop layer formed over the entire surface of the substrate including the second metal line; a third insulating interlayer formed on the peripheral driving part of the etch-stop layer; a third metal line formed on the third insulating interlayer; a fourth insulating interlayer formed on the third insulating interlayer including the third metal line, to be disposed in the peripheral driving part; and a fourth metal line formed on the fourth insulating interlayer.
    • CMOS图像传感器包括:基板,包括感测部分和外围驱动部分; 在所述基板的整个表面上形成的第一绝缘夹层; 形成在每个感测和外围驱动部分中的第一绝缘夹层上的第一金属线; 在包括所述第一金属线的所述基板的整个表面上形成的第二绝缘夹层; 形成在每个传感器和外围驱动部分中的第二绝缘中间层上的第二金属线; 在包括所述第二金属线的所述基板的整个表面上形成的蚀刻停止层; 形成在蚀刻停止层的周边驱动部分上的第三绝缘夹层; 形成在所述第三绝缘中间层上的第三金属线; 在第三绝缘中间层上形成的第四绝缘夹层,包括第三金属线,设置在周边驱动部中; 以及形成在所述第四绝缘中间层上的第四金属线。
    • 4. 发明授权
    • Apparatus and method of laser power and frequency stabilization of radio
frequency excited laser using optogalvanic effect
    • 使用光电效应的射频激发激光器的激光功率和频率稳定装置和方法
    • US6084893A
    • 2000-07-04
    • US94604
    • 1998-06-15
    • Jong Woon ChoiYoung Boong ChungJeong Ser ParkStrzelec MarekKopica Mirek
    • Jong Woon ChoiYoung Boong ChungJeong Ser ParkStrzelec MarekKopica Mirek
    • H01S3/134H01S3/13
    • H01S3/134
    • An apparatus for and a method of stabilizing the laser power and frequency of a radio frequency excited laser, which are adapted to lock the laser power and frequency of the laser at the vertex of a laser gain curve using an optogalvanic effect generated from the laser itself, thereby stabilizing the laser power and frequency without requiring any specific unit to be arranged inside or outside a cavity of the laser. A capacitor is coupled to a radio frequency inlet of the radio frequency discharge tube. The capacitor serves to induce a part of radio frequency energy, introduced into the radio frequency discharge tube, toward a detector, so that the optogalvanic signal is measured, based on the induced signal, after removing radio frequency components from the induced signal by the detector, thereby enabling a measurement of a variation in input radio frequency energy caused by the optogalvanic effect. Accordingly, it is possible to provide a stable, simple and compact laser exhibiting an improved laser efficiency.
    • 用于稳定射频激发激光器的激光功率和频率的装置和方法,其适于使用从激光器本身产生的光电效应将激光器的激光功率和频率锁定在激光增益曲线的顶点 从而稳定激光功率和频率,而不需要将任何特定单元布置在激光器的腔体的内部或外部。 电容器耦合到射频放电管的射频入口。 电容器用于将被引入射频放电管的一部分射频能量引导到检测器,使得基于感应信号,在由检测器从感应信号中去除射频分量之后测量光电信号 从而能够测量由光电效应引起的输入射频能量的变化。 因此,可以提供表现出提高的激光效率的稳定,简单且紧凑的激光。
    • 8. 发明授权
    • Method of forming floating gate array of flash memory device
    • 形成闪存器件的浮栅阵列的方法
    • US07413953B2
    • 2008-08-19
    • US11641034
    • 2006-12-19
    • Jong Woon Choi
    • Jong Woon Choi
    • H01L21/336
    • H01L27/11521H01L27/115
    • The method of forming a floating gate array of a flash memory device includes: (a) sequentially forming a tunnel oxide film, a floating gate forming film, a capping oxide film and a first nitride film on a semiconductor substrate with an active device region defined by device isolation films; (b) patterning the first nitride film to form a first nitride film pattern; (c) forming first oxide film spacers on sidewalls of the first nitride film pattern; (d) selectively removing the first nitride film pattern; (e) forming a plurality of second nitride film patterns separated by the first oxide film spacers on the capping oxide film; (f) selectively removing the first oxide film spacers interposed between the plurality of second nitride film patterns and a portion of the capping oxide film to expose a surface of the floating gate forming film between the second nitride film patterns; (g) forming a plurality of floating gate patterns by removing a portion of the floating gate forming film exposed using the second nitride film patterns as an etching mask; and (h) oxidizing the sidewall of each of the plurality of floating gate patterns to form sidewall oxide films therebetween.
    • 形成闪速存储器件的浮置栅极阵列的方法包括:(a)在半导体衬底上依次形成隧道氧化膜,浮栅形成膜,封盖氧化物膜和第一氮化物膜,其中定义有源器件区域 通过器件隔离膜; (b)图案化所述第一氮化物膜以形成第一氮化物膜图案; (c)在第一氮化物膜图案的侧壁上形成第一氧化膜间隔物; (d)选择性地除去第一氮化物膜图案; (e)在所述封盖氧化膜上形成由所述第一氧化膜间隔物分离的多个第二氮化物膜图案; (f)选择性地去除夹在所述多个第二氮化物膜图案之间的所述第一氧化物膜间隔物和所述封盖氧化膜的一部分,以暴露所述第二氮化物膜图案之间的所述浮栅形成膜的表面; (g)通过去除使用第二氮化物膜图案暴露的浮栅形成膜的一部分作为蚀刻掩模来形成多个浮栅图案; 和(h)氧化多个浮栅图案中的每一个的侧壁以在其间形成侧壁氧化膜。