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1. 发明授权

US08303569B2 Composite laminated catheter with flexible segment and method of making same 有权
标题翻译：具有柔性段的复合层压导管及其制造方法
公开(公告)号：US08303569B2
公开(公告)日：2012-11-06
申请号：US11562042
申请日：2006-11-21
申请人： Jonathon M. Lobbins , Kenneth D. Warnock, Jr. , Michelle Provost , Lee Core , Michael Papa , Michael Riopel
发明人： Jonathon M. Lobbins , Kenneth D. Warnock, Jr. , Michelle Provost , Lee Core , Michael Papa , Michael Riopel
IPC分类号： A61M25/00 , B29C65/00
CPC分类号： A61M25/0054 , A61M25/0012 , A61M25/0013 , A61M25/0029 , A61M25/0045 , A61M25/0053 , A61M2025/0034 , A61M2025/0037 , A61M2025/0059 , A61M2025/0081
摘要： A medical catheter including a composite laminated shaft having a longitudinal segment that is mechanically deformed to have reduced and varying stiffness. A method of making the catheter is also disclosed.
摘要翻译：一种医用导管，其包括具有机械变形以具有减小且变化的刚度的纵向段的复合层压轴。还公开了制造导管的方法。

2. 发明授权

US6156675A Method for enhanced dielectric film uniformity 有权
标题翻译：提高介电膜均匀性的方法
公开(公告)号：US6156675A
公开(公告)日：2000-12-05
申请号：US407575
申请日：1999-09-28
申请人： Jonathon M. Lobbins , Leonard J. Olmer
发明人： Jonathon M. Lobbins , Leonard J. Olmer
IPC分类号： C23C16/509 , H01L21/316 , B05D3/06 , H01L21/44
CPC分类号： H01L21/02129 , C23C16/5096 , H01L21/02274 , H01L21/31625
摘要： The present invention relates to an apparatus and method for depositing a film on a wafer. A reactor for depositing a film on a surface of a wafer comprises a processing chamber having an electrode, a ceramic wafer support supporting the wafer and separated from the electrode by a distance of between 230 and 240 millimeters, a gas inlet supplying gas reactants, and a radio frequency inlet supplying radio frequency energy. The reactor further comprises a heating chamber having at least one heat source which heats the wafer. A method for depositing a film on a surface of a semiconductor wafer comprises providing a processing chamber having a ceramic wafer support supporting the wafer and an electrode, separating the electrode from the ceramic wafer support by a distance of between 230 and 240 millimeters, supplying radio frequency energy into the processing chamber, supplying gas reactants into the processing chamber, and heating the wafer.
摘要翻译：本发明涉及一种在晶片上沉积薄膜的设备和方法。用于在晶片表面上沉积薄膜的反应器包括具有电极的处理室，支撑晶片的陶瓷晶片支架，并与电极隔开230-240毫米的距离，供气气体反应物的气体入口和射频入口提供射频能量。反应器还包括具有加热晶片的至少一个热源的加热室。一种用于在半导体晶片的表面上沉积薄膜的方法包括提供一个处理室，该处理室具有支撑该晶片的陶瓷晶片支撑件和一个电极，将该电极与陶瓷晶片支撑件分开距离为230至240毫米，将频率能量进入处理室，将气体反应物供应到处理室中，并加热晶片。

3. 发明授权

US06506690B1 Method for forming dielectric stack including second dielectric layer with lower undoped portion and upper doped portion 有权
标题翻译：用于形成包括具有下部未掺杂部分和上部掺杂部分的第二介电层的电介质堆叠的方法
公开(公告)号：US06506690B1
公开(公告)日：2003-01-14
申请号：US09557430
申请日：2000-04-25
申请人： Jonathon M. Lobbins
发明人： Jonathon M. Lobbins
IPC分类号： H01L2131
CPC分类号： H01L21/3145 , H01L21/31625 , H01L21/31629 , H01L21/76828 , H01L21/76829
摘要： An intermediary dielectric layer is disposed between two dielectric layers thereby eliminating a flow stabilization step that may produce unwanted deposition that leads to peeling. A wafer is provided having an HDP layer. An undoped silicon glass layer is deposited on top of the HDP layer to improve adherence of a subsequently deposited PSG layer.
摘要翻译：中间介电层设置在两个电介质层之间，从而消除可能产生导致剥离的不希望的沉积的流动稳定步骤。提供具有HDP层的晶片。未掺杂的硅玻璃层沉积在HDP层的顶部，以改善随后沉积的PSG层的粘附性。

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