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1. 发明授权

US5541145A Low temperature sintering route for aluminum nitride ceramics 失效
标题翻译：氮化铝陶瓷的低温烧结路线
公开(公告)号：US5541145A
公开(公告)日：1996-07-30
申请号：US489615
申请日：1995-06-12
申请人： Jonathan H. Harris , Subhash L. Shinde , Takeshi Takamori , Robert A. Youngman , Lester W. Herron , Benjamin V. Fasano
发明人： Jonathan H. Harris , Subhash L. Shinde , Takeshi Takamori , Robert A. Youngman , Lester W. Herron , Benjamin V. Fasano
IPC分类号： C04B35/581
CPC分类号： C04B35/581 , Y10S428/901
摘要： An aluminum nitride ceramic having desired properties suitable for electronic packaging applications can be prepared from a novel aluminum nitride powder/sintering aid mixture. The sintering aid comprises a glassy component formed from alumina, calcia and boria, and a non-vitreous component comprising an element or compound of a metal of Group IIa, IIIa, or the lanthanides, preferably crystalline oxides, reactibis with the crystallized glass component and the alumina from the Al N grains. Alternatively, the sintering aid comprises a multi-component glass composition capable of forming the above components upon melting and thereafter crystallizing upon reaction.
摘要翻译：可以由新型氮化铝粉末/烧结助剂混合物制备具有适合于电子封装应用的所需性能的氮化铝陶瓷。烧结助剂包括由氧化铝，氧化钙和氧化硼形成的玻璃状组分，以及包含IIa，IIIa族金属或镧系元素的元素或化合物的非玻璃状组分，优选结晶氧化物与结晶的玻璃组分反应，来自Al N颗粒的氧化铝。或者，烧结助剂包括能够在熔化后形成上述组分并随后在反应后结晶的多组分玻璃组合物。

2. 发明授权

US5552232A Aluminum nitride body having graded metallurgy 失效
公开(公告)号：US5552232A
公开(公告)日：1996-09-03
申请号：US361351
申请日：1994-12-21
申请人： Jon A. Casey , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Jonathan H. Harris , Lester W. Herron , Gregory M. Johnson , Niranjan M. Patel , Andrew M. Reitter , Subhash L. Shinde , Rao V. Vallabhaneni , Robert A. Youngman
发明人： Jon A. Casey , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Jonathan H. Harris , Lester W. Herron , Gregory M. Johnson , Niranjan M. Patel , Andrew M. Reitter , Subhash L. Shinde , Rao V. Vallabhaneni , Robert A. Youngman
IPC分类号： B32B18/00 , B22F7/02 , C04B35/581 , C04B37/02 , C04B41/51 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/48 , H01L23/373 , H05K1/03 , H05K3/24 , H05K3/40 , H05K3/46 , B22F3/00
CPC分类号： C04B41/009 , B22F7/02 , C04B41/5133 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/4846 , H01L21/486 , H01L23/3731 , H05K3/4061 , B22F2998/00 , C04B2111/00405 , C04B2111/00844 , H01L2924/0002 , H05K1/0306 , H05K2201/035 , H05K2201/09981 , H05K3/248 , H05K3/4611 , H05K3/4629 , Y10S428/901 , Y10T428/12021 , Y10T428/12028 , Y10T428/12056 , Y10T428/31678
摘要： Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

3. 发明授权

US5552107A Aluminum nitride body having graded metallurgy 失效
标题翻译：具有分级冶金的氮化铝体
公开(公告)号：US5552107A
公开(公告)日：1996-09-03
申请号：US437494
申请日：1995-05-09
申请人： Jon A. Casey , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Jonathan H. Harris , Lester W. Herron , Gregory M. Johnson , Niranjan M. Patel , Andrew M. Reitter , Subhash L. Shinde , Rao V. Vallabhaneni , Robert A. Youngman
发明人： Jon A. Casey , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Jonathan H. Harris , Lester W. Herron , Gregory M. Johnson , Niranjan M. Patel , Andrew M. Reitter , Subhash L. Shinde , Rao V. Vallabhaneni , Robert A. Youngman
IPC分类号： B32B18/00 , B22F7/02 , C04B35/581 , C04B37/02 , C04B41/51 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/48 , H01L23/373 , H05K1/03 , H05K3/24 , H05K3/40 , H05K3/46
CPC分类号： C04B41/009 , B22F7/02 , C04B41/5133 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/4846 , H01L21/486 , H01L23/3731 , H05K3/4061 , B22F2998/00 , C04B2111/00405 , C04B2111/00844 , H01L2924/0002 , H05K1/0306 , H05K2201/035 , H05K2201/09981 , H05K3/248 , H05K3/4611 , H05K3/4629 , Y10S428/901 , Y10T428/12021 , Y10T428/12028 , Y10T428/12056 , Y10T428/31678
摘要： Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.
摘要翻译：公开了一种具有分级冶金的氮化铝体及其制造方法。氮化铝体具有至少一个通孔，并且包括与氮化铝体直接接触的第一层和与第一层直接接触并完全封装的第二层。第一层包括30至60体积％的氮化铝和40至70体积％的钨和/或钼，而第二层包括90至100体积％的钨和/或钼和0至10体积％的氮化铝。

4. 发明授权

US5773377A Low temperature sintered, resistive aluminum nitride ceramics 失效
标题翻译：低温烧结，电阻氮化铝陶瓷
公开(公告)号：US5773377A
公开(公告)日：1998-06-30
申请号：US489610
申请日：1995-06-12
申请人： Jonathan H. Harris , Robert A. Youngman , Subhash L. Shinde , Lester W. Herron , Benjamin V. Fasano
发明人： Jonathan H. Harris , Robert A. Youngman , Subhash L. Shinde , Lester W. Herron , Benjamin V. Fasano
IPC分类号： C04B35/581 , C04B35/64 , C04B35/582
CPC分类号： C04B35/581 , C04B35/64 , Y10S428/901
摘要： An aluminum nitride ceramic having enhanced properties suitable for electronic packaging applications can be prepared from a synergistic aluminum nitride powder/sintering aid mixture, in which the sintering aid is formulated to provide a resultant desirable second phase within the sintered body. The aluminum nitride powder/sintering aid mixture can be formed into green sheet-metal laminates and sintered at low temperature to yield high density, high electrical resistivity, and high thermal conductivity metal ceramic sintered bodies with low camber.
摘要翻译：具有适合于电子封装应用的增强性能的氮化铝陶瓷可以由协同的氮化铝粉末/烧结助剂混合物制备，其中配制烧结助剂以在烧结体内提供所需的所需第二相。氮化铝粉末/烧结助剂混合物可以形成生坯薄片金属层压板，并在低温下烧结以产生高密度，高电阻率，以及具有低弧度的高导热性金属陶瓷烧结体。

5. 发明授权

US5424261A Low temperature sintering route for aluminum nitride ceramics 失效
标题翻译：氮化铝陶瓷的低温烧结路线
公开(公告)号：US5424261A
公开(公告)日：1995-06-13
申请号：US172032
申请日：1993-12-22
申请人： Jonathan H. Harris , Subhash L. Shinde , Takeshi Takamori , Robert A. Youngman
发明人： Jonathan H. Harris , Subhash L. Shinde , Takeshi Takamori , Robert A. Youngman
IPC分类号： C04B35/581
CPC分类号： C04B35/581 , Y10S428/901
摘要： An aluminum nitride ceramic having desired properties suitable for electronic packaging applications can be prepared from a novel aluminum nitride powder/sintering aid mixture. The sintering aid comprises a glassy component formed from alumina, calcia and boria, and a non-vitreous component comprising an element or compound of a metal of Group IIa, IIIa, or the lanthanides, preferably crystalline oxides, reactible with the crystallized glass component and the alumina from the AlN grains. Alternatively, the sintering aid comprises a multi-component glass composition capable of forming the above components upon melting and thereafter crystallizing upon reaction.
摘要翻译：可以由新型氮化铝粉末/烧结助剂混合物制备具有适合于电子封装应用的所需性能的氮化铝陶瓷。烧结助剂包括由氧化铝，氧化钙和氧化硼形成的玻璃状组分，以及非玻璃状组分，其包含IIa，IIIa族金属或镧系元素的元素或化合物，优选结晶氧化物，可与结晶的玻璃组分反应，来自AlN颗粒的氧化铝。或者，烧结助剂包括能够在熔化后形成上述组分并随后在反应后结晶的多组分玻璃组合物。

6. 发明授权

US5888446A Method of forming an aluminum nitride article utilizing a platinum catalyst 失效
标题翻译：使用铂催化剂形成氮化铝制品的方法
公开(公告)号：US5888446A
公开(公告)日：1999-03-30
申请号：US7625
申请日：1998-01-15
申请人： Jon A. Casey , Jonathan H. Harris , Lester Wynn Herron , Irvin Huseby , Richard A. Shelleman , Subhash L. Shinde , Robert A. Youngman
发明人： Jon A. Casey , Jonathan H. Harris , Lester Wynn Herron , Irvin Huseby , Richard A. Shelleman , Subhash L. Shinde , Robert A. Youngman
IPC分类号： C04B35/581 , C04B35/638 , C04B35/64
CPC分类号： C04B35/638 , C04B35/581
摘要： Disclosed is a method of forming an aluminum nitride article. The method includes the steps of adding platinum to a composition including a binder, aluminum nitride particles and a sintering aid; forming the composition into an article; placing the article in a substantially non-carbonaceous container; and sintering the article in a reducing atmosphere to cause removal of the binder and densification of the aluminum nitride article, wherein the platinum catalyzes the removal of the binder.
摘要翻译：公开了一种形成氮化铝制品的方法。该方法包括将铂添加到包含粘合剂，氮化铝颗粒和烧结助剂的组合物中的步骤; 将组合物形成制品; 将物品放置在基本上非碳质的容器中; 并且在还原气氛中烧结该制品以使得粘结剂的去除和氮化铝制品的致密化，其中铂催化除去粘合剂。

7. 发明授权

US6017485A Process for making a low electrical resistivity, high purity aluminum nitride electrostatic chuck 失效
标题翻译：制造低电阻率，高纯氮化铝静电吸盘的方法
公开(公告)号：US6017485A
公开(公告)日：2000-01-25
申请号：US622994
申请日：1996-03-28
申请人： Rudolph C. Enck , Jonathan H. Harris , Robert A. Youngman , Thomas S. Nemecek
发明人： Rudolph C. Enck , Jonathan H. Harris , Robert A. Youngman , Thomas S. Nemecek
IPC分类号： C04B35/581 , H01L23/15 , C04B35/582
CPC分类号： H01L23/15 , C04B35/581 , H01L2924/0002
摘要： A controlled dielectric loss, sintered aluminum nitride body having a density of greater than about 95% theoretical, a thermal conductivity of greater than about 100 W/m-K, and a dissipation factor measured at room temperature at about 1 KHz selected from:(a) less than or equal to about 0.001; and(b) greater than or equal to about 0.01.A process for producing a controlled dielectric loss, sintered aluminum nitride body, comprising heat treating an aluminum nitride body at sintering temperatures, including providing a heat treatment atmosphere which effects a selected nitrogen vacancy population in the aluminum nitride body at the sintering temperatures, and cooling the aluminum nitride body from sintering temperatures at a controlled rate and in a cooling atmosphere effective to control the selected nitrogen vacancy population.
摘要翻译：受控介电损耗，具有大于理论值约95％的密度，大于约100W / mK的热导率和在约1KHz室温下测量的耗散因数的烧结氮化铝体，其选自：（a）小于或等于约0.001; 和（b）大于或等于约0.01。一种制造受控介质损耗的烧结氮化铝体的方法，包括在烧结温度下对氮化铝体进行热处理，包括在烧结温度下提供在氮化铝体中产生选定的氮空位的热处理气氛，以及冷却氮化铝体以受控的速率和冷却气氛中的烧结温度有效地控制所选择的氮空位。

8. 发明授权

US5763093A Aluminum nitride body having graded metallurgy 失效
公开(公告)号：US5763093A
公开(公告)日：1998-06-09
申请号：US657259
申请日：1996-06-03
申请人： Jon Alfred Casey , Carla Natalia Cordero , Benjamin Vito Fasano , David Brian Goland , Robert Hannon , Jonathan H. Harris , Lester Wynn Herron , Gregory Marvin Johnson , Niranjan Mohanlal Patel , Andrew Michael Reitter , Subhash Laxman Shinde , Rao Venkateswara Vallabhaneni , Robert A. Youngman
发明人： Jon Alfred Casey , Carla Natalia Cordero , Benjamin Vito Fasano , David Brian Goland , Robert Hannon , Jonathan H. Harris , Lester Wynn Herron , Gregory Marvin Johnson , Niranjan Mohanlal Patel , Andrew Michael Reitter , Subhash Laxman Shinde , Rao Venkateswara Vallabhaneni , Robert A. Youngman
IPC分类号： B32B18/00 , B22F7/02 , C04B35/581 , C04B37/02 , C04B41/51 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/48 , H01L23/373 , H05K1/03 , H05K3/24 , H05K3/40 , H05K3/46 , B22F3/00
CPC分类号： C04B41/009 , B22F7/02 , C04B41/5133 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/4846 , H01L21/486 , H01L23/3731 , H05K3/4061 , B22F2998/00 , C04B2111/00405 , C04B2111/00844 , H01L2924/0002 , H05K1/0306 , H05K2201/035 , H05K2201/09981 , H05K3/248 , H05K3/4611 , H05K3/4629 , Y10S428/901 , Y10T428/12021 , Y10T428/12028 , Y10T428/12056 , Y10T428/31678
摘要： Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

9. 发明授权

US5682589A Aluminum nitride body having graded metallurgy 失效
标题翻译：具有分级冶金的氮化铝体
公开(公告)号：US5682589A
公开(公告)日：1997-10-28
申请号：US657258
申请日：1996-06-03
申请人： Jon Alfred Casey , Carla Natalia Cordero , Benjamin Vito Fasano , David Brian Goland , Robert Hannon , Jonathan H. Harris , Lester Wynn Herron , Gregory Marvin Johnson , Niranjan Mohanlal Patel , Andrew Michael Reitter , Subhash Laxman Shinde , Rao Venkateswara Vallabhaneni , Robert A. Youngman
发明人： Jon Alfred Casey , Carla Natalia Cordero , Benjamin Vito Fasano , David Brian Goland , Robert Hannon , Jonathan H. Harris , Lester Wynn Herron , Gregory Marvin Johnson , Niranjan Mohanlal Patel , Andrew Michael Reitter , Subhash Laxman Shinde , Rao Venkateswara Vallabhaneni , Robert A. Youngman
IPC分类号： B32B18/00 , B22F7/02 , C04B35/581 , C04B37/02 , C04B41/51 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/48 , H01L23/373 , H05K1/03 , H05K3/24 , H05K3/40 , H05K3/46 , B22F1/00
CPC分类号： C04B41/009 , B22F7/02 , C04B41/5133 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/4846 , H01L21/486 , H01L23/3731 , H05K3/4061 , B22F2998/00 , C04B2111/00405 , C04B2111/00844 , H01L2924/0002 , H05K1/0306 , H05K2201/035 , H05K2201/09981 , H05K3/248 , H05K3/4611 , H05K3/4629 , Y10S428/901 , Y10T428/12021 , Y10T428/12028 , Y10T428/12056 , Y10T428/31678
摘要： Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.
摘要翻译：公开了一种具有分级冶金的氮化铝体及其制造方法。氮化铝体具有至少一个通孔，并且包括与氮化铝体直接接触的第一层和与第一层直接接触并完全封装的第二层。第一层包括30至60体积％的氮化铝和40至70体积％的钨和/或钼，而第二层包括90至100体积％的钨和/或钼和0至10体积％的氮化铝。

10. 发明申请

US20080186691A1 IMPLANTABLE MEDICAL DEVICE HOUSING REINFORCEMENT 审中-公开
标题翻译：可植入医疗器械房屋加固
公开(公告)号：US20080186691A1
公开(公告)日：2008-08-07
申请号：US11380746
申请日：2006-04-28
申请人： John C. Mertz , Robert A. Youngman , Terry L. Sterrett
发明人： John C. Mertz , Robert A. Youngman , Terry L. Sterrett
IPC分类号： H05K7/14 , H05K3/36
CPC分类号： A61N1/05 , A61N1/375 , A61N1/3758 , Y10T29/49126
摘要： The main new features of the disclosure relate to the ability to add stiffness to a shield portion of an active implantable medical device (AIMD) without increasing the net displaced volume to the AIMD in application. A number of techniques for adding stiffness are disclosed, depicted and claimed herein; for example using a sheet or strip(s) of material. A sheet of material can be bonded to a portion of an AIMD housing where an internal component makes contact with and/or is otherwise supported by the housing. The sheet and/or rib can be adhered or welded, soldered, brazed, etc. The sheet or rib can couple to the interior and/or exterior of the housing. Also, preproduction preparation of bulk material used to fabricate the shields can include region(s) of increased cross section (thickness). Such bulk material can have regions of increased cross section (thickness) that correspond to production equipment for punching, shaping and/or trimming the bulk material into the desired AIMD housing.
摘要翻译：本公开的主要新特征涉及向主动植入式医疗装置（AIMD）的屏蔽部分增加刚度的能力，而不会增加应用中的AIMD的净位移体积。本文公开，描绘和要求了许多用于增加刚度的技术; 例如使用一片或多条材料。一片材料可以结合到AIMD壳体的一部分，其中内部部件与壳体接触和/或以其它方式支撑。片和/或肋可以被粘合或焊接，焊接，铜焊等。片或肋可以耦合到壳体的内部和/或外部。此外，用于制造屏蔽件的散装材料的预制备制备可以包括增加横截面（厚度）的区域。这种散装材料可以具有增加的横截面（厚度）的区域，其对应于用于冲压，成型和/或修整散装材料到所需AIMD壳体中的生产设备。

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