专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5156971A Rapid identification of environmental bacillus 失效
标题翻译：快速鉴定环境杆菌
公开(公告)号：US5156971A
公开(公告)日：1992-10-20
申请号：US821525
申请日：1992-01-15
申请人： Johnathan L. Kiel , John L. Alls , Richard A. Weber , Jill E. Parker
发明人： Johnathan L. Kiel , John L. Alls , Richard A. Weber , Jill E. Parker
IPC分类号： C12N1/20 , C12Q1/04
CPC分类号： C12R1/07 , C12N1/20 , C12Q1/04 , G01N2333/32
摘要： A diagnostic test for environmental bacillus which comprises the steps of inoculating an agar growth medium comprising a nitrate source, luminol and 3-amino-L-tyrosine (3AT) with the sample, incubating the inoculated medium and determining the presence of the bacillus. The novel medium preferably comprises potassium nitrate, luminol, 3-amino-L-tyrosine and trypticase soy agar. Antibiotics and/or a specific bacteriophage may be added to the medium surface in localized areas to show specific bacterial lysis for identification. The novel medium and the methods of this invention are suitable for the identification of B. anthracis.
摘要翻译：环境芽孢杆菌的诊断试验包括以下步骤：将含有硝酸盐源，鲁米诺和3-氨基-L-酪氨酸（3AT）的琼脂生长培养基与样品接种，培养接种的培养基并确定芽孢杆菌的存在。该新型培养基优选包含硝酸钾，鲁米诺，3-氨基-L-酪氨酸和胰蛋白酶大豆琼脂。可将抗生素和/或特异性噬菌体加入局部区域的培养基表面，以显示特异性细菌裂解进行鉴定。本发明的新型培养基和方法适用于鉴定炭疽杆菌。

2. 发明授权

US4814856A Integral transducer structures employing high conductivity surface features 失效
标题翻译：采用高导电性表面特征的积分换能器结构
公开(公告)号：US4814856A
公开(公告)日：1989-03-21
申请号：US860523
申请日：1986-05-07
申请人： Anthony D. Kurtz , Timothy A. Nunn , Richard A. Weber
发明人： Anthony D. Kurtz , Timothy A. Nunn , Richard A. Weber
IPC分类号： G01L9/00 , H01L27/20
CPC分类号： G01L9/0055 , G01L9/0042 , H01L27/20
摘要： A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacarificial wafer, after beign subject to diffusion of highly doped semiconductor material, exhibits a plurality of varying depth regions. These regions manifest the basic transducer structure. By utilizing selective etching, one can thus form a transducer structure on the sacrificial wafer which is bonded to the carrier wafer by means of an electrostatic bond. The resultant method and structure enables one to provide transducers with improved operating characteristics which are adaptable for many different modes of operation.
摘要翻译：通过在牺牲晶片中利用变化的高度扩散层来制造半导体传感器结构。载体晶片在顶表面上具有包括玻璃层的电介质层。在人造晶片经受高掺杂半导体材料的扩散后，表现出多个变化的深度区域。这些区域表现出基本的换能器结构。通过利用选择性蚀刻，因此可以在牺牲晶片上形成通过静电键结合到载体晶片上的换能器结构。所得到的方法和结构使得能够提供能够适用于许多不同操作模式的改进的操作特性的换能器。

3. 发明授权

US5634248A Method for post forming a rounded insertion end of a tampon pledget of an open-ended applicator 失效
标题翻译：用于后端形成开口施用器的棉塞的圆形插入端的方法
公开(公告)号：US5634248A
公开(公告)日：1997-06-03
申请号：US502589
申请日：1995-07-14
申请人： Thomas C. McNelis , Jamshid Rejai , Richard A. Weber
发明人： Thomas C. McNelis , Jamshid Rejai , Richard A. Weber
IPC分类号： A61F13/20 , A61F13/26 , D04H1/06
CPC分类号： A61F13/2085 , A61F13/2051 , A61F13/26
摘要： There is provided a method for forming a round, hemispherical shape at the forward insertion end of a tampon pledget after the pledget has been assembled within a tampon applicator. The pledget is assembled within the applicator so that a portion of its fibers is exposed at an open insertion end of the applicator. After assembly, an insertion end formation tool is applied to the exposed fibers to form a depression in the middle of the insertion end and a full periphery cushion that flares peripherally outward from the depression. The insertion end formation tool has a reverse-donut shaped curvature with a central projection or spike. The central spike reduces the axial force necessary to form the full periphery cushion by radially displacing the fibers in the central location or middle of the insertion end of the pledget. With the insertion end formed in accordance with the method of present invention, the full periphery cushion provides a rounded, forward or insertion end to facilitate an application of the tampon for its intended use.
摘要翻译：提供了一种在棉签组装在卫生棉条敷料器中之后在棉塞的前部插入端处形成圆形半球形的方法。将毛细管组装在施用器内，使得其一部分纤维在施用器的开放插入端露出。在组装之后，将插入端形成工具施加到暴露的纤维上以在插入端的中间形成凹陷，以及从凹部向外周向向外张开的全周围垫。插入端形成工具具有具有中心突起或尖峰的反向环形曲率。中心钉通过径向移位纤维在插入端的插入端的中心位置或中间而减小形成整个周边垫所需的轴向力。随着根据本发明的方法形成的插入端，全周边衬垫提供圆形的，向前的或插入的端部，以促进卫生棉条应用于其预期用途。

4. 发明授权

US4438619A Corn harvester combine with means for picking up loose ears 失效
标题翻译：玉米收割机结合松松耳朵的手段
公开(公告)号：US4438619A
公开(公告)日：1984-03-27
申请号：US476279
申请日：1983-03-17
申请人： Edward J. Heim , Stephen B. Hennessey , Curtis R. Janssen , R. Shannon Johnson , Richard B. League , Ronald D. Shinogle , Richard A. Weber
发明人： Edward J. Heim , Stephen B. Hennessey , Curtis R. Janssen , R. Shannon Johnson , Richard B. League , Ronald D. Shinogle , Richard A. Weber
IPC分类号： A01D45/02
CPC分类号： A01D45/021
摘要： An attachment for a corn harvester to pick up loose ears off the ground. In the embodiment described, novel pickup and conveyor mechanism are substituted for the forward, pointed snout members at the forward ends of the longitudinally extending hoods which are part of the row dividers in a conventional corn head and which define throats aligned with rows of corn. The attachment cooperates with the conventional stripper plates, gathering chains, and snapping rolls, making the harvester doubly effective in that it collects loose ears from the ground as well as picking them from the stalks.
摘要翻译：玉米收割机的附件是从地面上松开耳朵。在所描述的实施例中，新颖的拾取和输送机构被替代为纵向延伸的罩的前端处的向前，尖头的鼻部构件，它们是常规玉米头中的行分隔器的一部分，并且限定与玉米排相对准的喉部。该附件与传统的脱模板，聚集链和捕捉辊协作，使收割机双重效力，从而从地面收集松散的耳朵以及从茎中挑取它们。

5. 发明授权

US4204185A Integral transducer assemblies employing thin homogeneous diaphragms 失效
标题翻译：采用薄均匀隔膜的积分换能器组件
公开(公告)号：US4204185A
公开(公告)日：1980-05-20
申请号：US841679
申请日：1977-10-13
申请人： Anthony D. Kurtz , Richard A. Weber
发明人： Anthony D. Kurtz , Richard A. Weber
IPC分类号： G01L1/22 , G01L9/00
CPC分类号： G01L9/0042 , G01L1/2293 , G01L9/0054 , Y10T29/49103
摘要： A pressure transducer is formed on an N-type wafer of silicon by depositing on the wafer a P+ layer. A thin N-type layer is then formed on the P+ layer. The N layer which is relatively thin, will form a diaphragm for piezoresistors which are deposited on the N layer. The P+ layer acts as a stop to enable a central aperture to be formed or etched into the N wafer; which aperture defines an active deflecting area for the thin N-type diaphragm. The various layers are crystallographically homogeneous to enable the piezoresistors to exhibit high coefficients and hence, provide a sensitive transducer assembly.
摘要翻译：通过在晶片上沉积P +层，在氮化硅晶片上形成压力传感器。然后在P +层上形成薄的N型层。相对较薄的N层将形成沉积在N层上的压敏电阻的隔膜。 P +层用作停止以使得能够形成或蚀刻N晶片的中心孔; 该孔限定了薄N型隔膜的主动偏转区域。各层在结晶学上是均匀的，以使得压敏电阻器能够显示出高的系数，并因此提供敏感的换能器组件。

6. 发明授权

US5002901A Method of making integral transducer structures employing high conductivity surface features 失效
标题翻译：使用高电导率表面特征制作积分传感器结构的方法
公开(公告)号：US5002901A
公开(公告)日：1991-03-26
申请号：US251816
申请日：1988-10-03
申请人： Anthony D. Kurtz , Timothy A. Nunn , Richard A. Weber
发明人： Anthony D. Kurtz , Timothy A. Nunn , Richard A. Weber
IPC分类号： G01L9/00 , H01L27/20
CPC分类号： G01L9/0055 , G01L9/0042 , H01L27/20 , Y10S148/012 , Y10T29/42
摘要： A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacrificial wafer, after being subject to diffusion of highly doped semiconductor material, exhibits a plurality of varying depth regions. These regions manifest the basic transducer structure. By utilizing selective etching, one can thus form a transducer structure on the sacrificial wafer which is bonded to the carrier wafer by mean of an electrostatic bond. The resultant method and structure enables one to provide transducers with improved operating characteristics which are adaptable for many different modes of operation.
摘要翻译：通过在牺牲晶片中利用变化的高度扩散层来制造半导体传感器结构。载体晶片在顶表面上具有包括玻璃层的电介质层。牺牲晶片经受高掺杂半导体材料的扩散后，表现出多个变化的深度区域。这些区域表现出基本的换能器结构。通过利用选择性蚀刻，因此可以在牺牲晶片上形成换能器结构，其通过静电键结合到载体晶片。所得到的方法和结构使得能够提供能够适用于许多不同操作模式的改进的操作特性的换能器。

7. 发明授权

US4739298A High temperature transducers and methods of manufacturing 失效
标题翻译：高温传感器和制造方法
公开(公告)号：US4739298A
公开(公告)日：1988-04-19
申请号：US706889
申请日：1985-02-28
申请人： Anthony D. Kurtz , Richard A. Weber , Timothy A. Nunn , Joseph R. Mallon
发明人： Anthony D. Kurtz , Richard A. Weber , Timothy A. Nunn , Joseph R. Mallon
IPC分类号： G01L9/00 , G01L1/22
CPC分类号： G01L9/0055 , Y10T29/49103
摘要： A high temperature transducer consists of a first section having a base layer of monocrystalline silicon which layer is coated with an oxide. A thin layer of a high temperature glass is sputtered on the oxide layer of the base layer. A second section is formed by diffusing a wafer of N type silicon to form a p+ layer. The first and second sections are bonded together by an anodic bond where the p+ layer is secured to the glass layer to form a composite structure. The N type material is then removed and piezoresistive deivces are formed in the p+ layer. This structure provides a high temperature transducer which exhibits stable operating parameters over a wide operating range.
摘要翻译：高温换能器由具有单层硅基底层的第一部分组成，该层被氧化物涂覆。将高温玻璃的薄层溅射在基底层的氧化物层上。通过扩散N型硅晶片形成p +层来形成第二部分。第一和第二部分通过阳极结合在一起，其中p +层被固定到玻璃层以形成复合结构。然后去除N型材料并在p +层中形成压阻电流。该结构提供了一个在宽工作范围内表现出稳定运行参数的高温换能器。

8. 发明授权

US4808220A Process for the preparation of refined ferromanganese 失效
标题翻译：精制铁锰矿的制备工艺
公开(公告)号：US4808220A
公开(公告)日：1989-02-28
申请号：US162539
申请日：1988-03-01
申请人： Hans Litterscheidt , Manfred Rahder , Carl-Heinz Schutz , Richard A. Weber
发明人： Hans Litterscheidt , Manfred Rahder , Carl-Heinz Schutz , Richard A. Weber
IPC分类号： C22C33/04 , C22C33/00 , C21C7/00
CPC分类号： C22C33/003
摘要： The invention relates to a process for the preparation of low-carbon and low-silicon ferromanganese (refined ferromanganese) by blowing with pure oxygen in a converter ferromanganese of high carbon content (high-carbon ferromanganese) produced in a blast furnace. The characterizing feature of the invention is that in an oxidation phase oxygen is blown from above with a top blowing lance on to the melt of high-carbon ferromanganese melt, while at the same time an inert stirring gas is blown through tuyeres into the melt below its level, and on termination of oxygen top blowing, in an immediately following reduction phase, solid reducing agents and lumps of lime are added to the melt to recover the slagged manganese.
摘要翻译：本发明涉及一种通过在高炉中生产的高碳含量（高碳锰铁）转化器铁锰中吹入纯氧来制备低碳低铁锰铁（精制铁锰）的方法。本发明的特征在于，在氧化阶段，将氧气从顶部吹起，用顶吹喷枪吹到高碳锰铁熔体的熔体上，同时将惰性搅拌气体通过风口吹入下面的熔体中其水平以及终止氧顶吹，在紧随其后的还原阶段，向熔体中加入固体还原剂和石灰块，以回收成渣锰。

9. 发明授权

US4672354A Fabrication of dielectrically isolated fine line semiconductor transducers and apparatus 失效
标题翻译：介质隔离的细线半导体传感器和设备的制造
公开(公告)号：US4672354A
公开(公告)日：1987-06-09
申请号：US804761
申请日：1985-12-05
申请人： Anthony D. Kurtz , Timothy A. Nunn , Richard A. Weber
发明人： Anthony D. Kurtz , Timothy A. Nunn , Richard A. Weber
IPC分类号： G01L1/22 , G01L9/00 , H01L21/306 , B44C1/22 , G01B7/16 , H01C17/00
CPC分类号： G01L1/2293 , G01L9/0042 , Y10S73/04 , Y10T29/42 , Y10T29/49103
摘要： There is disclosed apparatus and methods of fabricating a piezoresistive semiconductor structure for use in a transducer. According to one method, a layer of silicon dioxide is grown over the surface of a first semiconductor wafer which is designated as a carrier wafer. A layer of glas is then formed on the top surface of the carrier wafer over said layer of silicon dioxide. A second wafer has diffused therein a high conductivity semiconductor layer which is diffused on a top surface of a sacrificial semiconductor wafer. The first and second wafers are then bonded together by means of an electrostatic bond with the high conductivity layer of the sacrificial wafer facing the glass layer of the first wafer. After securing the wafers together, one may etch away the remaining portion of the sacrificial wafer to provide a high conductivity resistive layer which is secured to the glass layer of the first wafer and is patterned to form a resistive network using standard photolithographic making. In another embodiment, the sacrificial wafer is processed by means of a high conductivity diffusion procedure whereby a resistive line pattern is formed in the second wafer. After diffusion, the second wafer is etched so that the high conductivity pattern projects from the top surface. This top surface consisting of the projected high conductivity resistive pattern is then bonded to the glass layer of the second wafer. After bonding the two wafers together, the unwanted N-type regions of the sacrificial wafer are etched away using a conductivity selective etch to form the resistive pattern.
摘要翻译：公开了制造用于换能器的压阻半导体结构的装置和方法。根据一种方法，在指定为载体晶片的第一半导体晶片的表面上生长二氧化硅层。然后在载体晶片的顶表面上形成一层玻璃，该层在二氧化硅层上。第二晶片在其中扩散了在牺牲半导体晶片的顶表面上扩散的高导电性半导体层。第一和第二晶片然后通过与第一晶片的玻璃层的牺牲晶片的高电导率层的静电键结合在一起。在将晶片固定在一起之后，可以蚀刻掉牺牲晶片的剩余部分，以提供固定到第一晶片的玻璃层的高导电性电阻层，并使用标准光刻制作来形成电阻网络。在另一个实施例中，牺牲晶片通过高电导率扩散程序进行处理，由此在第二晶片中形成电阻线图案。在扩散之后，蚀刻第二晶片，使得高导电性图案从顶表面突出。然后将由投影的高导电性电阻图形组成的顶表面结合到第二晶片的玻璃层。在将两个晶片结合在一起之后，使用电导率选择性蚀刻将牺牲晶片的不想要的N型区域蚀刻掉以形成电阻图案。

10. 发明授权

US4617781A Polypropylene wrap end seals and process for making same 失效
标题翻译：聚丙烯包封端和其制造方法
公开(公告)号：US4617781A
公开(公告)日：1986-10-21
申请号：US680698
申请日：1984-12-12
申请人： Willard A. Ingersoll , Robert C. Norquest , Richard A. Weber
发明人： Willard A. Ingersoll , Robert C. Norquest , Richard A. Weber
IPC分类号： B29C65/18 , B29C65/26 , B31B3/28 , B65B5/02 , B65B51/16 , B65B7/06 , B65B7/18
CPC分类号： B65B61/06 , B29C65/18 , B29C65/26 , B29C66/4312 , B29C66/4322 , B29C66/49 , B29C66/71 , B29C66/81433 , B29C66/83411 , B29C66/83413 , B29C66/91421 , B29C66/919 , B31B1/00 , B65B5/02 , B65B51/16 , B29C66/91431 , B29C66/91641 , B29K2023/12 , Y10T156/1039
摘要： A voided polypropylene film tampon wrap having end seals which are formed by mechanical crimping and a process for sealing the ends of the voided polypropylene film tampon wrap by mechanical crimping. A notch is formed adjacent to each end seal but remote from the enclosed tampon. Each end seal is formed by a pair of horizontal teeth wheels each having a pitch of 50 teeth per inch. One of the pair of wheels is heated to a temperature of 125.degree..+-.15.degree., and force is applied to at least one wheel to seal that end of the wrap by the pair of wheels.
摘要翻译：具有通过机械压接形成的端部密封件的空隙聚丙烯薄膜棉塞包装以及通过机械卷曲密封空隙聚丙烯薄膜棉塞包装的端部的方法。在每个端部密封件附近形成凹口，但是远离封闭的塞子。每个端部密封件由一对水平齿轮形成，每个齿轮具有每英寸50个齿的间距。将一对车轮中的一个加热到125°±15°的温度，并且将力施加到至少一个车轮以通过一对车轮密封该包裹物的一端。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式