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1. 发明授权

US4679303A Method of fabricating high density MOSFETs with field aligned channel stops 失效
标题翻译：制造具有场对齐通道停止的高密度MOSFET的方法
公开(公告)号：US4679303A
公开(公告)日：1987-07-14
申请号：US734806
申请日：1985-05-16
申请人： John Y. Chen , Richard C. Henderson
发明人： John Y. Chen , Richard C. Henderson
IPC分类号： H01L21/266 , H01L21/762 , H01L21/8234 , H01L21/8236 , H01L21/425
CPC分类号： H01L21/823481 , H01L21/266 , H01L21/762 , H01L21/8236 , Y10S438/945
摘要： A high-density MOSFET having field oxide self-aligned channel stops for device isolation and an optimal method of fabricating such a device is described. The process provides channel stops underlying and aligned with the edges of a field oxide layer and allows the dopant concentration of the channel stops to be established separately from that of the active device channel region by use of an independant channel stop implant. The active devices thus formed require minimal isolation area, have a high field threshold voltage, a low junction capacitance, and minimal body effect. They are particularly useful in high-speed, high-performance integrated circuits.
摘要翻译：描述了具有场氧化物自对准通道的高密度MOSFET，用于器件隔离，并且描述了制造这种器件的最佳方法。该过程提供通道停止在场氧化物层的边缘下方并与之对准，并且通过使用独立的通道停止注入，允许通道的掺杂剂浓度与有源器件沟道区域的掺杂剂浓度分开建立。这样形成的有源器件需要最小的隔离面积，具有高场阈值电压，低结电容和最小的身体效应。它们在高速，高性能集成电路中特别有用。

2. 发明申请

US20080162392A1 METHOD AND APPARATUS FOR FORMALIZING INFORMATION TECHNOLOGY (IT) BUSINESS DECISION MAKING 失效
标题翻译：信息技术（IT）业务决策制定的方法和装置
公开(公告)号：US20080162392A1
公开(公告)日：2008-07-03
申请号：US11619566
申请日：2007-01-03
申请人： Bonnie K. Ray , Mary E. Helander , Richard C. Henderson
发明人： Bonnie K. Ray , Mary E. Helander , Richard C. Henderson
IPC分类号： G06N5/02
CPC分类号： G06N5/02 , G06Q10/0639 , G06Q10/06393
摘要： A method, framework, and system for providing formalized Information Technology (IT) business decision making, which includes determining a relationship between at least one Information Technology (IT) environmental element and at least one Information Technology (IT) performance metric, and determining a business value based on the at least one Information Technology (IT) environmental element and the at least one Information Technology (IT) performance metric to optimize an Information Technology (IT) business decision based on at least one predetermined business objective. The at least one predetermined business objective is based on a set of system constraints.
摘要翻译：一种用于提供形式化信息技术（IT）业务决策的方法，框架和系统，其包括确定至少一个信息技术（IT）环境要素与至少一个信息技术（IT）性能度量之间的关系，以及确定基于所述至少一个信息技术（IT）环境要素和所述至少一个信息技术（IT）性能度量的商业价值，以基于至少一个预定业务目标优化信息技术（IT）业务决策。至少一个预定的业务目标是基于一组系统约束。

3. 发明授权

US06446513B1 High accuracy flow restrictor using crystal 失效
标题翻译：高精度限流器采用水晶
公开(公告)号：US06446513B1
公开(公告)日：2002-09-10
申请号：US09593833
申请日：2000-06-13
申请人： Richard C. Henderson
发明人： Richard C. Henderson
IPC分类号： G01F137
CPC分类号： G01F1/42
摘要： A flow meter for use in a flow stream with a tubular housing, including a fluid inlet and a fluid outlet, in the flow stream, with the inlet pressure exceeding the outlet pressure. The interior has an orifice defined in a crystalline silicon membrane, along crystal planes of the silicon so that the geometry of the orifices is precisely known and has a sharp knife edge rim profile. Where the fluid is a gas, pressure and temperature transducers measure conditions inside of the housing for application of gas law principles. By using instantaneous pressure and temperature in the chamber, mass flow through the outlet orifices of the chamber is computed and delivered as an output signal.
摘要翻译：一种用于流动流的流量计，其具有流体流中的管状壳体，包括流体入口和流体出口，入口压力超过出口压力。内部具有限定在晶体硅膜中的孔，沿着硅的晶面，使得孔的几何形状是精确已知的并且具有锋利的刀刃边缘轮廓。在流体是气体的情况下，压力和温度传感器测量壳体内的条件以应用气体法则原理。通过在腔室中使用瞬时压力和温度，计算出通过腔室的出口孔的质量流量并作为输出信号传送。

4. 发明授权

US4315781A Method of controlling MOSFET threshold voltage with self-aligned channel stop 失效
标题翻译：通过自对准通道停止来控制MOSFET阈值电压的方法
公开(公告)号：US4315781A
公开(公告)日：1982-02-16
申请号：US142902
申请日：1980-04-23
申请人： Richard C. Henderson
发明人： Richard C. Henderson
IPC分类号： H01L21/033 , H01L21/265 , H01L21/266 , H01L21/76 , H01L21/8236 , H01L27/088 , H01L29/78 , H01L21/263 , H01L27/04
CPC分类号： H01L21/266 , H01L21/033 , H01L21/26513 , H01L21/2652 , H01L21/8236
摘要： A process is provided for fabricating MOSFET devices having field source, gate and drain regions. The threshold voltage of both the channel and field regions of such devices is controlled by forming a comparatively thick oxide film on a semiconductor surface, defining enhancement mode transistor regions in the oxide film to expose portions of the semiconductor surface, implanting p-type ions under conditions such that the peak distribution of p-type atoms lies in the semi-conductor substrate just beneath the semiconductor/-oxide interface and counter-doping with n-type ions under conditions such that no implanted ions penetrate the oxide film. As a consequence, a desirably high threshold voltage is obtained in the field region, while a desirably low threshold voltage is obtained in the channel region. Depletion mode transistors are fabricated on the same wafer by masking the enhancement mode regions, defining depletion mode transistor regions in the oxide film to expose portions of the semiconductor surface and implanting n-type ions under conditions such that no ions penetrate the mask or oxide film. Metal gate or refractory gate technology is then employed to fabricate source, gate and drain regions and electrical contacts thereto. Parasitic conduction paths between neighboring transistors are substantially eliminated due to the peak distribution of p-type atoms in the field region.
摘要翻译：提供了一种用于制造具有场源，栅极和漏极区域的MOSFET器件的工艺。通过在半导体表面上形成比较厚的氧化膜来控制这些器件的沟道和场区的阈值电压，在氧化物膜中限定增强模式晶体管区域以暴露半导体表面的部分，将p型离子注入条件使得p型原子的峰分布位于刚好在半导体/ - 氧化物界面正下方的半导体衬底中，并且在没有注入离子穿透氧化物膜的条件下与n型离子相反掺杂的条件。结果，在场区域中获得期望的高阈值电压，而在沟道区域中获得期望的低阈值电压。消耗模式晶体管通过掩蔽增强模式区域而制造在相同的晶片上，限定氧化物膜中的耗尽型晶体管区域以暴露半导体表面的部分并且在没有离子穿透掩模或氧化物膜的条件下注入n型离子。然后使用金属栅极或难熔栅极技术来制造源极，栅极和漏极区域以及与其接触的电极。由于场区域中p型原子的峰分布，相邻晶体管之间的寄生导电路径基本上被消除。

5. 发明授权

US4149307A Process for fabricating insulated-gate field-effect transistors with self-aligned contacts 失效
标题翻译：制造具有自对准触点的绝缘栅场效应晶体管的工艺
公开(公告)号：US4149307A
公开(公告)日：1979-04-17
申请号：US865355
申请日：1977-12-28
申请人： Richard C. Henderson
发明人： Richard C. Henderson
IPC分类号： H01L21/033 , H01L21/336 , H01L21/26
CPC分类号： H01L29/66575 , H01L21/033 , Y10S148/02 , Y10S148/10 , Y10S148/103 , Y10S148/141
摘要： The specification describes a process for making an insulated-gate field-effect transistor wherein a silicon nitride mask is deposited above the surface of a semiconductor body and is used in one embodiment of the invention in conjunction with a refractory gate member (1) as a mask in the formation of the source and drain regions by the ion implantation of conductivity-type-determining impurities on both sides of the gate and (2) as a mask in the formation of contact holes to the source and drain regions of the transistor for the subsequent provision of metal contacts to these regions. In another embodiment, there is described a process for forming source and drain contacts wherein the mask for the formation of contact holes by oxide etching is also the pattern definition and lift-off mask for the formation of metal contacts to the transistor.
摘要翻译：本说明书描述了一种用于制造绝缘栅场效应晶体管的工艺，其中氮化硅掩模沉积在半导体主体的表面上方，并且在本发明的一个实施例中与耐火门构件（1）一起使用，作为通过离子注入栅极两侧的导电型确定杂质形成源极和漏极区域的掩模，以及（2）作为形成与晶体管的源极和漏极区域的接触孔的掩模，随后向这些地区提供金属接触。在另一个实施例中，描述了用于形成源极和漏极接触的方法，其中用于通过氧化物蚀刻形成接触孔的掩模也是用于形成到晶体管的金属接触的图案定义和剥离掩模。

6. 发明授权

US08027870B2 Method and apparatus for formalizing information technology (IT) business decision making 失效
标题翻译：信息技术（IT）业务决策的形式化方法和设备
公开(公告)号：US08027870B2
公开(公告)日：2011-09-27
申请号：US11619566
申请日：2007-01-03
申请人： Bonnie K. Ray , Mary E. Helander , Richard C. Henderson
发明人： Bonnie K. Ray , Mary E. Helander , Richard C. Henderson
IPC分类号： G06Q10/00
CPC分类号： G06N5/02 , G06Q10/0639 , G06Q10/06393
摘要： A method, framework, and system for providing formalized Information Technology (IT) business decision making, which includes determining a relationship between at least one Information Technology (IT) environmental element and at least one Information Technology (IT) performance metric, and determining a business value based on the at least one Information Technology (IT) environmental element and the at least one Information Technology (IT) performance metric to optimize an Information Technology (IT) business decision based on at least one predetermined business objective. The at least one predetermined business objective is based on a set of system constraints.
摘要翻译：一种用于提供形式化信息技术（IT）业务决策的方法，框架和系统，其包括确定至少一个信息技术（IT）环境要素与至少一个信息技术（IT）性能度量之间的关系，以及确定基于所述至少一个信息技术（IT）环境要素和所述至少一个信息技术（IT）性能度量的商业价值，以基于至少一个预定业务目标优化信息技术（IT）业务决策。至少一个预定的业务目标是基于一组系统约束。

7. 发明授权

US06247493B1 Miniature pulsatile flow controller 失效
标题翻译：微型脉动流量控制器
公开(公告)号：US06247493B1
公开(公告)日：2001-06-19
申请号：US09521298
申请日：2000-03-09
申请人： Richard C. Henderson
发明人： Richard C. Henderson
IPC分类号： F16K3102
CPC分类号： G05D7/0641 , Y10T137/0379 , Y10T137/7761
摘要： A miniature flow controller housing a fluid inlet and a fluid outlet, with the inlet pressure exceeding the outlet pressure. The outlet has orifices defined in a crystalline silicon membrane, along crystal planes of the silicon so that the geometry of the orifices is precisely known. The inlet and outlet are throttled by poppets which can seal the orifices on command of a device controller. The poppets are driven by shape retentive membranes which have two states, an open state and a closed state with a state change caused by application of small amounts of current to a resistive element in contact with the membrane. Rapid actuation of the poppets causes operation of the valve in a pulse mode. Where the fluid is a gas, pressure and temperature transducers measure conditions inside of the housing for application of gas law principles. By recording instantaneous pressure and temperature in the chamber, as the poppets are actuated, mass flow through the outlet orifices of the chamber is computed.
摘要翻译：容纳流体入口和流体出口的微型流量控制器，其入口压力超过出口压力。出口具有限定在晶体硅膜中的孔，沿着硅的晶面定义，使得孔的几何形状是精确已知的。入口和出口通过可以根据设备控制器的命令密封孔的弹簧节流。弹簧由形状保持膜驱动，其具有两种状态，即通过向与膜接触的电阻元件施加少量电流而导致状态变化的打开状态和闭合状态。弹簧的快速致动导致阀处于脉冲模式。在流体是气体的情况下，压力和温度传感器测量壳体内的条件以应用气体法则原理。通过在室中记录瞬时压力和温度，当弹簧被致动时，计算通过腔室的出口孔的质量流量。

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