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    • 5. 发明申请
    • COMPLIANT THERMAL INTERFACE STRUCTURE UTILIZING SPRING ELEMENTS
    • 使用弹簧元件的合适的热接口结构
    • US20080144288A1
    • 2008-06-19
    • US12037067
    • 2008-02-25
    • John P. KaridisMark D. SchultzBucknell C. Webb
    • John P. KaridisMark D. SchultzBucknell C. Webb
    • H05K7/20
    • H01L23/433A01H5/02A01H6/42H01L23/427H01L2924/0002H01L2924/00
    • A structure for cooling an electronic device is disclosed. The structure includes a solid heat-conducting layer disposed over the electronic device. The solid heat-conducting layer is a planar surface in contact with the electronic device. The structure further includes a plurality of copper spring elements disposed between the solid heat-conducting layer and the electronic device for providing a heat path from the electronic device and wherein the plurality of spring elements extend in an upper direction away from the electronic device and wherein the plurality of spring elements include a spring for offering resistance when loaded and wherein the spring elements have a smaller profile at a first end in contact with the electronic device, wherein the profile increases in size at a second end in contact with the solid heat-conducting layer.
    • 公开了一种用于冷却电子设备的结构。 该结构包括设置在电子设备上的固体导热层。 固体导热层是与电子设备接触的平面。 该结构还包括设置在固体导热层和电子装置之间的多个铜弹簧元件,用于提供来自电子装置的热路径,并且其中多个弹簧元件沿远离电子装置的上方向延伸,并且其中 多个弹簧元件包括用于在加载时提供电阻的弹簧,并且其中弹簧元件在与电子设备接触的第一端处具有较小的轮廓,其中,在与固体热交换器接触的第二端处的轮廓尺寸增大, 导电层。
    • 6. 发明授权
    • Compliant thermal interface structure utilizing spring elements
    • 采用弹簧元件的热接口结构
    • US07545647B2
    • 2009-06-09
    • US12037067
    • 2008-02-25
    • John P. KaridisMark D. SchultzBucknell C. Webb
    • John P. KaridisMark D. SchultzBucknell C. Webb
    • H05K7/20H01L23/36
    • H01L23/433A01H5/02A01H6/42H01L23/427H01L2924/0002H01L2924/00
    • A structure for cooling an electronic device is disclosed. The structure includes a solid heat-conducting layer disposed over the electronic device. The solid heat-conducting layer is a planar surface in contact with the electronic device. The structure further includes a plurality of copper spring elements disposed between the solid heat-conducting layer and the electronic device for providing a heat path from the electronic device and wherein the plurality of spring elements extend in an upper direction away from the electronic device and wherein the plurality of spring elements include a spring for offering resistance when loaded and wherein the spring elements have a smaller profile at a first end in contact with the electronic device, wherein the profile increases in size at a second end in contact with the solid heat-conducting layer.
    • 公开了一种用于冷却电子设备的结构。 该结构包括设置在电子设备上的固体导热层。 固体导热层是与电子设备接触的平面。 该结构还包括设置在固体导热层和电子装置之间的多个铜弹簧元件,用于提供来自电子装置的热路径,并且其中多个弹簧元件沿远离电子装置的上方向延伸,并且其中 多个弹簧元件包括用于在加载时提供电阻的弹簧,并且其中弹簧元件在与电子设备接触的第一端处具有较小的轮廓,其中,在与固体热交换器接触的第二端处的轮廓尺寸增大, 导电层。
    • 10. 发明授权
    • Planar phase-change memory cell with parallel electrical paths
    • 具有并联电路径的平面相变存储单元
    • US08861266B2
    • 2014-10-14
    • US13619473
    • 2012-09-14
    • Michele M. FranceschiniJohn P. Karidis
    • Michele M. FranceschiniJohn P. Karidis
    • G11C11/00H01L45/00G11C8/10G11C11/56G11C13/00
    • G11C8/10G11C11/5678G11C13/0004G11C13/0069G11C2013/0083H01L27/2463H01L45/06H01L45/1226H01L45/144H01L45/1675
    • A method for operating a phase change memory that includes initializing a memory cell that includes: a first conductive electrode having a length greater than its width and an axis aligned with the length; a second conductive electrode having an edge oriented at an angle to the axis of the first conductive electrode; an insulator providing a separation distance between an end of the first conductive electrode and the edge of the second conductive electrode; and a phase change material covering a substantial portion of the first conductive electrode and at least a portion of the second conductive electrode. The initializing the memory cell includes creating a first amorphous material region in the phase change material. An active crystalline material region is created inside the first amorphous material region. Information is stored in the memory cell by creating a second amorphous material region inside the active crystalline material region.
    • 一种用于操作相变存储器的方法,包括初始化存储单元,所述存储单元包括:具有大于其宽度的长度的第一导电电极和与所述长度对准的轴线; 第二导电电极,其具有与第一导电电极的轴成一定角度的边缘; 绝缘体,其在所述第一导电电极的端部和所述第二导电电极的边缘之间提供间隔距离; 以及覆盖所述第一导电电极的主要部分和所述第二导电电极的至少一部分的相变材料。 初始化存储单元包括在相变材料中形成第一非晶态材料区域。 在第一无定形材料区域内形成活性结晶材料区域。 通过在活性结晶材料区域内产生第二非晶态材料区域将信息存储在存储器单元中。