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1. 发明申请

US20050109163A1 Process for multiple stage direct electrowinning of copper 失效
标题翻译：铜的多级直接电解冶金工艺
公开(公告)号：US20050109163A1
公开(公告)日：2005-05-26
申请号：US10976481
申请日：2004-10-29
申请人： John Marsden , Robert Brewer , Joanna Robertson , David Baughman , Phillip Thompson , Wayne Hazen , Christel Bemelmans
发明人： John Marsden , Robert Brewer , Joanna Robertson , David Baughman , Phillip Thompson , Wayne Hazen , Christel Bemelmans
IPC分类号： C22B15/00
CPC分类号： C22B15/0004 , C22B15/0071 , C22B15/0089 , Y02P10/236
摘要： A system and process for recovering copper from a copper-containing ore, concentrate, or other copper-bearing material to produce high quality cathode copper from a leach solution without the use of copper solvent/solution extraction techniques or apparatus. A process for recovering copper from a copper-containing ore generally includes the steps of providing a feed stream containing comminuted copper-containing ore, concentrate, or other copper-bearing material, leaching the feed stream to yield a copper-containing solution, conditioning the copper-containing solution through one or more physical or chemical conditioning steps, and electrowinning copper directly from the copper-containing solution in multiple electrowinning stages, without subjecting the copper-containing solution to solvent/solution extraction prior to electrowinning.
摘要翻译：一种用于从含铜矿石，浓缩物或其它含铜材料中回收铜的系统和方法，以从浸出溶液中生产高质量的阴极铜，而不使用铜溶剂/溶液萃取技术或装置。从含铜矿石中回收铜的方法通常包括提供含有粉碎的含铜矿石，浓缩物或其它含铜材料的进料流的步骤，浸提进料流以产生含铜溶液，调理通过一个或多个物理或化学调节步骤的含铜溶液，以及在多个电解提取阶段直接从含铜溶液中电解提取铜，而在电解提取之前不对含铜溶液进行溶剂/溶液萃取。

2. 发明申请

US20060270190A1 Method of transferring a thin crystalline semiconductor layer 审中-公开
标题翻译：转移薄晶体半导体层的方法
公开(公告)号：US20060270190A1
公开(公告)日：2006-11-30
申请号：US11137979
申请日：2005-05-25
申请人： Michael Nastasi , Lin Shao , Phillip Thompson , Silvanus Lau , N. Theodore , Terry Alford , James Mayer
发明人： Michael Nastasi , Lin Shao , Phillip Thompson , Silvanus Lau , N. Theodore , Terry Alford , James Mayer
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method for transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves deposition of a doped semiconductor layer on a substrate and epitaxial growth of a thin, monocrystalline, semiconductor layer on the doped layer. After bonding the thin epitaxial monocrystalline semiconductor layer to a second substrate, hydrogen is introduced into the doped layer, and the thin layer is cleaved and transferred to the second substrate, with the cleaving controlled to happen at the doped layer.
摘要翻译：将单晶薄层从第一衬底转移到第二衬底上的方法包括在衬底上沉积掺杂半导体层，并在掺杂层上沉积薄的单晶半导体层。在将薄的外延单晶半导体层接合到第二衬底之后，将氢引入到掺杂层中，并且薄层被切割并转移到第二衬底，其中解理被控制在掺杂层发生。

3. 发明申请

US20070079672A1 Screw feeder 审中-公开
标题翻译：螺旋给料机
公开(公告)号：US20070079672A1
公开(公告)日：2007-04-12
申请号：US10554939
申请日：2004-04-30
申请人： Daniel Bone , Phillip Thompson
发明人： Daniel Bone , Phillip Thompson
IPC分类号： B25B23/00 , B25B17/00
CPC分类号： B25B23/04 , B25B23/06 , B25B23/10
摘要： A screw feeder (10) is disclosed which can be mounted to a screwdriver (12) for holding a screw (32) in position relative to a screwdriver bit (16) of the screwdriver (12) to enable insertion of the screw (12) into a workpiece adjacent the holding portion (30). The screw feeder (10) has a holding portion (30) and a feeder portion (34) adjacent the holding portion (30). The holding portion (30) can releasably hold a first screw (32) in position relative to the screwdriver bit (16) and receive a distal end of the screwdriver bit (16) to enable the screwdriver bit (16) to insert the first screw (32) into the workpiece. The feeder portion (34) is arranged adjacent the holding portion (30) and is adapted to receive a plurality of second screws (36) and to sequentially feed each of the second screws (36) into the holding portion (30) in response to retraction of the screwdriver bit (16) from the holding portion.
摘要翻译：公开了螺钉进料器（10），其可以安装到螺丝刀（12），用于相对于螺丝刀（12）的螺丝刀头（16）将螺钉（32）保持在适当位置，以使螺钉（12）能够插入，进入与保持部（30）相邻的工件。螺旋给料器（10）具有与保持部（30）相邻的保持部（30）和供给部（34）。保持部分（30）可以相对于螺丝起子头（16）可释放地将第一螺钉（32）保持在适当的位置，并且接收螺丝刀头（16）的远端以使得螺丝刀头（16）插入第一螺钉（32）进入工件。馈送部分34被布置成邻近保持部分30并适于容纳多个第二螺钉36，并响应于第二螺钉36将每个第二螺钉36依次送入保持部30。螺丝刀头（16）从保持部分缩回。

4. 发明申请

US20060284165A1 Silicon-based backward diodes for zero-biased square law detection and detector arrays of same 有权
标题翻译：基于硅的反向二极管，用于零偏平方律检测和相同的检测器阵列
公开(公告)号：US20060284165A1
公开(公告)日：2006-12-21
申请号：US11407120
申请日：2006-04-19
申请人： Paul Berger , Niu Jin , Phillip Thompson , Sung-Yong Chung
发明人： Paul Berger , Niu Jin , Phillip Thompson , Sung-Yong Chung
IPC分类号： H01L29/06
CPC分类号： H01L29/365 , H01L29/8618
摘要： A Si-based diode (10, 10′, 100) is formed by epitaxially depositing a Si-based diode structure on a silicon substrate. The Si-based diode structure includes a Si-based pn junction (16, 16′, 18, 18′, 30, 32, 160, 161) having a backward diode current-voltage characteristic in which the forward tunneling current is substantially smaller than the backward tunneling current at comparable voltage levels. In some embodiments, the Si-based pn junction includes at least one non-silicon or silicon alloy layer such as at least one SiGe layer (16, 16′, 160, 161). In some embodiments, at least one delta doping (30, 32) is disposed on the silicon substrate in or near the pn junction, that together with the Si-based pn junction define an electrical junction having the backward diode current-voltage characteristic. A large area detector array may include a plurality of such Si-based diodes (10, 10′, 100).
摘要翻译：通过在硅衬底上外延沉积Si基二极管结构来形成Si基二极管（10,10'，100）。 Si基二极管结构包括具有反向二极管电流 - 电压特性的Si基pn结（16,16'，18,18'，30,32,160,161），其中正向隧穿电流基本上小于反向隧道电流在相当的电压水平。在一些实施例中，Si基pn结包括至少一个非硅或硅合金层，例如至少一个SiGe层（16,16'，160,161）。在一些实施例中，至少一个δ掺杂（30,32）设置在pn结中或其附近的硅衬底上，与Si基pn结一起限定具有后向二极管电流 - 电压特性的电连接。大面积检测器阵列可以包括多个这样的Si基二极管（10,10'，100）。

5. 发明授权

US07476308B2 Process for multiple stage direct electrowinning of copper 失效
标题翻译：铜的多级直接电解冶金工艺
公开(公告)号：US07476308B2
公开(公告)日：2009-01-13
申请号：US10976481
申请日：2004-10-29
申请人： John O. Marsden , Robert E. Brewer , Joanna M. Robertson , David R. Baughman , Phillip Thompson , Wayne W. Hazen , Christel M. A. Bemelmans
发明人： John O. Marsden , Robert E. Brewer , Joanna M. Robertson , David R. Baughman , Phillip Thompson , Wayne W. Hazen , Christel M. A. Bemelmans
IPC分类号： C25C1/12
CPC分类号： C22B15/0004 , C22B15/0071 , C22B15/0089 , Y02P10/236
摘要： A system and process for recovering copper from a copper-containing ore, concentrate, or other copper-bearing material to produce high quality cathode copper from a leach solution without the use of copper solvent/solution extraction techniques or apparatus. A process for recovering copper from a copper-containing ore generally includes the steps of providing a feed stream containing comminuted copper-containing ore, concentrate, or other copper-bearing material, leaching the feed stream to yield a copper-containing solution, conditioning the copper-containing solution through one or more physical or chemical conditioning steps, and electrowinning copper directly from the copper-containing solution in multiple electrowinning stages, without subjecting the copper-containing solution to solvent/solution extraction prior to electrowinning.
摘要翻译：一种用于从含铜矿石，浓缩物或其它含铜材料中回收铜的系统和方法，以从浸出溶液中生产高质量的阴极铜，而不使用铜溶剂/溶液萃取技术或装置。从含铜矿石中回收铜的方法通常包括提供含有粉碎的含铜矿石，浓缩物或其它含铜材料的进料流的步骤，浸提进料流以产生含铜溶液，调理通过一个或多个物理或化学调节步骤的含铜溶液，以及在多个电解提取阶段直接从含铜溶液中电解提取铜，而在电解提取之前不对含铜溶液进行溶剂/溶液萃取。

6. 发明申请

US20060234474A1 Method of transferring a thin crystalline semiconductor layer 审中-公开
标题翻译：转移薄晶体半导体层的方法
公开(公告)号：US20060234474A1
公开(公告)日：2006-10-19
申请号：US11106849
申请日：2005-04-15
申请人： Michael Nastasi , Lin Shao , Phillip Thompson , Silvanus Lau , Terry Alford , James Mayer , N. Theodore
发明人： Michael Nastasi , Lin Shao , Phillip Thompson , Silvanus Lau , Terry Alford , James Mayer , N. Theodore
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262
摘要： A method for transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves epitaxial growth of a sandwich structure with a strained epitaxial layer buried below a monocrystalline thin layer, and lift-off and transfer of the monocrystalline thin layer with the cleaving controlled to happen within the buried strained layer in conjunction with the introduction of hydrogen.
摘要翻译：将单晶薄层从第一衬底转移到第二衬底上的方法包括外延生长具有埋在单晶薄层之下的应变外延层的夹层结构，以及单晶薄层的剥离和转移结合氢的引入控制发生在埋置的应变层内。

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