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1. 发明授权

US06440520B1 Patterned magnetic recording disk with substrate patterned by ion implantation 有权
标题翻译：带有衬底的图案磁记录盘通过离子注入图案化
公开(公告)号：US06440520B1
公开(公告)日：2002-08-27
申请号：US09350733
申请日：1999-07-09
申请人： John Edward Eric Baglin , Mark Whitney Hart , Andrew John Kellock , Bruce David Terris , Koichi Wago , Dieter Klaus Weller , Liesl Folks
发明人： John Edward Eric Baglin , Mark Whitney Hart , Andrew John Kellock , Bruce David Terris , Koichi Wago , Dieter Klaus Weller , Liesl Folks
IPC分类号： G11B566
CPC分类号： B82Y15/00 , B82Y10/00 , G11B5/7315 , G11B5/743 , G11B5/82 , G11B5/8404 , G11B5/855 , G11B2005/0002 , Y10S428/90 , Y10T428/24355
摘要： A method for making a patterned magnetic recording disk uses patterned ion implantation of the disk substrate. Energetic ions, such as He, N or Ar ions, are directed to the disk substrate through a mask, preferably a non-contact mask. They are implanted into the substrate, and the process causes localized topographic distortions in the substrate surface. A magnetic layer is then deposited over the substrate in the conventional manner, such as by sputtering. The result is a disk with patterned magnetic regions that are raised above the substrate surface. Because these regions are elevated, they are closer to the recording head in the disk drive and can thus be individually recorded to form discrete magnetic bits. Depending on the type of substrate used, the ion implantation can cause either localized swelling to form pillars or localized compaction to form pits. The patches of magnetic material on the tops of the pillars, or on the substrate surface between the pits, form the discrete magnetic bits.
摘要翻译：用于制造图案化磁记录盘的方法使用盘基片的图案化离子注入。能量离子如He，N或Ar离子通过掩模，优选非接触掩模引导到盘基底。它们被植入衬底中，并且该过程引起衬底表面中的局部地形变形。然后以常规方式例如通过溅射将磁性层沉积在衬底上。结果是具有在衬底表面上方升高的图案化磁区的磁盘。因为这些区域被升高，所以它们更靠近磁盘驱动器中的记录头，因此可以被单独地记录以形成离散磁头。根据所使用的底物的类型，离子注入可导致局部溶胀形成柱状或局部压实形成凹坑。在柱的顶部或凹坑之间的衬底表面上的磁性材料的贴片形成离散的磁性位。

2. 发明授权

US06331364B1 Patterned magnetic recording media containing chemically-ordered FePt of CoPt 有权
标题翻译：含有化学有序FePt或CoPt的图案化磁记录介质
公开(公告)号：US06331364B1
公开(公告)日：2001-12-18
申请号：US09350803
申请日：1999-07-09
申请人： John Edward Eric Baglin , Andrew John Kellock , Bruce David Terris , Dieter Klaus Weller , Liesl Folks
发明人： John Edward Eric Baglin , Andrew John Kellock , Bruce David Terris , Dieter Klaus Weller , Liesl Folks
IPC分类号： G11B566
CPC分类号： G11B5/653 , G11B5/656 , G11B5/746 , G11B5/82 , G11B5/855 , Y10S428/90
摘要： A patterned magnetic recording disk, i.e., a disk with discrete magnetically recordable regions that can function as discrete magnetic bits, is formed by ion irradiating a continuous magnetic film of a chemically-ordered alloy having a tetragonal crystalline structure through a patterned non-contact mask. The ions cause disordering in the film and produce regions in the film that have no magnetocrystalline anisotropy. The regions of the film not impacted by the ions retain their chemical ordering and magnetocrystalline anisotropy and thus serve as the discrete magnetic regions that can be recorded as individual magnetic bits. The chemically-ordered alloy is preferably Co (or Fe) and Pt (or Pd) with the c-axis of the tetragonal crystalline film oriented at an angle less than 45 degrees relative to the plane of the film, so that after patterning the discrete magnetic regions can be recorded by horizontal magnetic recording.
摘要翻译：通过离子辐射具有四方晶体结构的化学有序合金的连续磁性膜，通过图案化的非接触掩模来形成图案化的磁记录盘，即具有可用作离散磁头的离散可磁记录区域的磁盘。离子引起薄膜中的无序化并产生不具有磁晶各向异性的膜中的区域。不受离子影响的膜的区域保留其化学排序和磁晶各向异性，并且因此用作可以记录为单个磁性位的离散磁性区域。化学有序合金优选是Co（或Fe）和Pt（或Pd），其中四方晶体膜的c轴相对于膜的平面定向成小于45度的角度，使得在图案化之后离散可以通过水平磁记录来记录磁区。

3. 发明授权

US06884632B2 Ion beam definition of magnetoresistive field sensors 失效
标题翻译：磁阻场传感器的离子束定义
公开(公告)号：US06884632B2
公开(公告)日：2005-04-26
申请号：US10765545
申请日：2004-01-26
申请人： John Edward Eric Baglin , Liesl Folks , Bruce Alvin Gurney , Bruce David Terris
发明人： John Edward Eric Baglin , Liesl Folks , Bruce Alvin Gurney , Bruce David Terris
IPC分类号： G11B5/00 , G11B5/012 , G11B5/31 , G11B5/39 , H01F10/32 , H01L21/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/0016 , G11B2005/3996 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3272
摘要： A magnetoresistive (MR) sensor can be shaped using ion beam irradiation and/or implantation through a mask introduced between a MR structure and an ion source. The mask covers selected portions of the MR structure to define the track width of the sensor. Ion irradiation and/or implantation reduces the magnetoresistance of the unmasked portions while leaving the masked portion substantially unaltered. The mask can be a photoresist mask, an electron beam resist mask, or a stencil mask. Alternatively the mask may be part of a projection ion beam system. Track width resolution is determined at the mask production step. The edges of the sensor can be defined by a highly collimated ion beam producing an extremely straight transition edge, which reduces sensor noise and improves sensor track width control. Improved hard bias layers that directly abut the sensor may be used to achieve a suitable stability. A variety of longitudinal bias schemes are compatible with ion beam patterning.
摘要翻译：可以使用离子束照射和/或通过在MR结构和离子源之间引入的掩模注入来形成磁阻（MR）传感器。掩模覆盖MR结构的所选部分以限定传感器的轨道宽度。离子照射和/或注入降低未掩蔽部分的磁阻，同时使掩蔽部分基本上保持不变。掩模可以是光致抗蚀剂掩模，电子束抗蚀剂掩模或模板掩模。或者，掩模可以是投影离子束系统的一部分。轨迹宽度分辨率在掩模生产步骤中确定。传感器的边缘可以由高度准直的离子束限定，产生非常直的过渡边缘，这降低了传感器噪声并提高了传感器轨道宽度控制。可以使用直接邻接传感器的改进的硬偏压层来实现合适的稳定性。各种纵向偏置方案与离子束图案相容。

4. 发明授权

US06741429B1 Ion beam definition of magnetoresistive field sensors 失效
标题翻译：磁阻场传感器的离子束定义
公开(公告)号：US06741429B1
公开(公告)日：2004-05-25
申请号：US09669030
申请日：2000-09-25
申请人： John Edward Eric Baglin , Liesl Folks , Bruce Alvin Gurney , Bruce David Terris
发明人： John Edward Eric Baglin , Liesl Folks , Bruce Alvin Gurney , Bruce David Terris
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/0016 , G11B2005/3996 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3272
摘要： A magnetoresistive (MR) sensor can be shaped using ion beam irradiation and/or implantation through a mask introduced between a MR structure and an ion source. The mask covers selected portions of the MR structure to define the track width of the sensor. Ion irradiation and/or implantation reduces the magnetoresistance of the unmasked portions while leaving the masked portion substantially unaltered. The mask can be a photoresist mask, an electron beam resist mask, or a stencil mask. Alternatively the mask may be part of a projection ion beam system. Track width resolution is determined at the mask production step. The edges of the sensor can be defined by a highly collimated ion beam producing an extremely straight transition edge, which reduces sensor noise and improves sensor track width control. Improved hard bias layers that directly abut the sensor may be used to achieve a suitable stability. A variety of longitudinal bias schemes are compatible with ion beam patterning.
摘要翻译：可以使用离子束照射和/或通过在MR结构和离子源之间引入的掩模注入来形成磁阻（MR）传感器。掩模覆盖MR结构的所选部分以限定传感器的轨道宽度。离子照射和/或注入降低未掩蔽部分的磁阻，同时使掩蔽部分基本上保持不变。掩模可以是光致抗蚀剂掩模，电子束抗蚀剂掩模或模板掩模。或者，掩模可以是投影离子束系统的一部分。轨迹宽度分辨率在掩模生产步骤中确定。传感器的边缘可以由高度准直的离子束限定，产生非常直的过渡边缘，这降低了传感器噪声并提高了传感器轨道宽度控制。可以使用直接邻接传感器的改进的硬偏压层来实现合适的稳定性。各种纵向偏置方案与离子束图案相容。

5. 发明申请

US20080145951A1 High density spin torque three dimensional (3D) memory arrays addressed with microwave current 有权
标题翻译：用微波电流寻址的高密度自旋扭矩三维（3D）存储器阵列
公开(公告)号：US20080145951A1
公开(公告)日：2008-06-19
申请号：US11642277
申请日：2006-12-19
申请人： Liesl Folks , Bruce David Terris
发明人： Liesl Folks , Bruce David Terris
IPC分类号： H01L21/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/5607
摘要： One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.
摘要翻译：本发明的一个实施例包括具有多个存储元件的三维存储器阵列，其通过单个顶部引线和单个底部引线耦合以形成阵列，每个存储元件包括无磁性层，其中非易失性数据可以是存储，其中每个存储器元件具有与每个数字存储器状态相关联的独特的谐振频率，从而在并行写入和读取操作期间使得能够进行频率寻址，每个存储元件还包括固定层和形成在自由层和固定层之间的间隔物。

6. 发明授权

US08422284B2 High density spin torque three dimensional (3D) memory arrays addressed with microwave current 有权
标题翻译：用微波电流寻址的高密度自旋扭矩三维（3D）存储器阵列
公开(公告)号：US08422284B2
公开(公告)日：2013-04-16
申请号：US12633750
申请日：2009-12-08
申请人： Liesl Folks , Bruce David Terris
发明人： Liesl Folks , Bruce David Terris
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/5607
摘要： One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.
摘要翻译：本发明的一个实施例包括具有多个存储元件的三维存储器阵列，其通过单个顶部引线和单个底部引线耦合以形成阵列，每个存储元件包括无磁性层，其中非易失性数据可以是存储，其中每个存储器元件具有与每个数字存储器状态相关联的独特的谐振频率，从而在并行写入和读取操作期间使得能够进行频率寻址，每个存储元件还包括固定层和形成在自由层和固定层之间的间隔物。

7. 发明授权

US07872905B2 Method and apparatus for write enable and inhibit for high density spin torque three dimensional (3D) memory arrays 有权
标题翻译：用于写入的方法和装置使能和抑制高密度自旋扭矩三维（3D）存储器阵列
公开(公告)号：US07872905B2
公开(公告)日：2011-01-18
申请号：US12262273
申请日：2008-10-31
申请人： Sylvia Helena Florez Marino , Liesl Folks , Bruce David Terris
发明人： Sylvia Helena Florez Marino , Liesl Folks , Bruce David Terris
IPC分类号： G11C11/00
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： A method and apparatus for write enable and write inhibit for high density spin torque three dimensional (3D) memory arrays.
摘要翻译：一种用于高密度自旋扭矩三维（3D）存储器阵列的写入使能和写入抑制的方法和装置。

8. 发明申请

US20100118585A1 HIGH DENSITY SPIN TORQUE THREE DIMENSIONAL (3D) MEMORY ARRAYS ADDRESSED WITH MICROWAVE CURRENT 有权
标题翻译：高密度旋转扭矩三维（3D）存储器阵列用微波电流寻址
公开(公告)号：US20100118585A1
公开(公告)日：2010-05-13
申请号：US12633750
申请日：2009-12-08
申请人： Liesl Folks , Bruce David Terris
发明人： Liesl Folks , Bruce David Terris
IPC分类号： G11C11/00 , H01L21/02 , H01L27/06 , H01L29/82 , G11C7/00 , G11C11/14
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/5607
摘要： One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.
摘要翻译：本发明的一个实施例包括具有多个存储元件的三维存储器阵列，其通过单个顶部引线和单个底部引线耦合以形成阵列，每个存储元件包括无磁性层，其中非易失性数据可以是存储，其中每个存储器元件具有与每个数字存储器状态相关联的独特的谐振频率，从而在并行写入和读取操作期间使得能够进行频率寻址，每个存储元件还包括固定层和形成在自由层和固定层之间的间隔物。

9. 发明授权

US07652915B2 High density spin torque three dimensional (3D) memory arrays addressed with microwave current 有权
标题翻译：用微波电流寻址的高密度自旋扭矩三维（3D）存储器阵列
公开(公告)号：US07652915B2
公开(公告)日：2010-01-26
申请号：US11642277
申请日：2006-12-19
申请人： Liesl Folks , Bruce David Terris
发明人： Liesl Folks , Bruce David Terris
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/5607
摘要： One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.
摘要翻译：本发明的一个实施例包括具有多个存储元件的三维存储器阵列，其通过单个顶部引线和单个底部引线耦合以形成阵列，每个存储元件包括无磁性层，其中非易失性数据可以是存储，其中每个存储器元件具有与每个数字存储器状态相关联的独特的谐振频率，从而在并行写入和读取操作期间使得能够进行频率寻址，每个存储元件还包括固定层和形成在自由层和固定层之间的间隔物。

10. 发明申请

US20090116310A1 METHOD AND APPARATUS FOR WRITE ENABLE AND INHIBIT FOR HIGH DENSITY SPIN TORQUE THREE DIMENSIONAL (3D) MEMORY ARRAYS 有权
标题翻译：用于高密度旋转扭矩三维（3D）记忆阵列的写入和禁止的方法和装置
公开(公告)号：US20090116310A1
公开(公告)日：2009-05-07
申请号：US12262273
申请日：2008-10-31
申请人： Sylvia Helena Florez Marino , Liesl Folks , Bruce David Terris
发明人： Sylvia Helena Florez Marino , Liesl Folks , Bruce David Terris
IPC分类号： G11C7/00
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： A method and apparatus for write enable and write inhibit for high density spin torque three dimensional (3D) memory arrays.
摘要翻译：一种用于高密度自旋扭矩三维（3D）存储器阵列的写入使能和写入抑制的方法和装置。

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