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    • 3. 发明授权
    • Opaque ceramic coatings
    • 不透明陶瓷涂料
    • US5730792A
    • 1998-03-24
    • US725791
    • 1996-10-04
    • Robert Charles CamillettiLoren Andrew HaluskaKeith Winton Michael
    • Robert Charles CamillettiLoren Andrew HaluskaKeith Winton Michael
    • C04B41/50C04B41/52C04B41/87C04B41/89H01L21/316H01L21/48H01L23/498C09D183/04
    • H01L23/573C04B41/5035C04B41/52C04B41/87C04B41/89H01L21/316H01L21/481H01L23/291H01L23/49894H01L2924/0002
    • Thick opaque ceramic coatings are used to protect delicate microelectronic devices against excited energy sources, radiation, light, abrasion, and wet etching techniques. The thick opaque ceramic coating are prepared from a mixture containing tungsten carbide (WC), tungsten metal (W), and phosphoric anhydride, i.e., phosphorous pentoxide (P.sub.2 O.sub.5), carried in an aqueous alkanol dispersion of colloidal silica and partial condensate of methylsilanetriol. The coating is pyrolyzed to form a ceramic SiO.sub.2 containing coating. A second coating of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC), diamond, or silicon nitride (Si.sub.3 N.sub.4), can be applied over the thick opaque ceramic coating to provide hermeticity. These coatings are useful on patterned wafers, electronic devices, and electronic substrates. The thick opaque ceramic coating is unique because the methyl silsesquioxane resin is resistant to etching using wet chemicals, i.e., acids such as H.sub.3 PO.sub.4 and H.sub.2 SO.sub.4, or bases.
    • 厚不透明陶瓷涂层用于保护精细的微电子器件免受激发的能量源,辐射,光,磨蚀和湿蚀刻技术。 厚的不透明陶瓷涂层由含有碳化钨(WC),钨金属(W)和磷酸酐(即五氧化二磷(P 2 O 5))的混合物制备,所述五氧化二磷(P 2 O 5)载于胶态二氧化硅的烷基醇水溶液和甲基硅烷三醇的部分缩合物中。 将涂层热解,形成含陶瓷SiO2涂层。 等离子体增强化学气相沉积(PECVD)碳化硅(SiC),金刚石或氮化硅(Si3N4)的第二涂层可以施加在厚的不透明陶瓷涂层上以提供气密性。 这些涂层在图案化的晶片,电子器件和电子基片上是有用的。 厚的不透明陶瓷涂层是独特的,因为甲基倍半硅氧烷树脂对使用湿化学品,即酸如H 3 PO 4和H 2 SO 4或碱的蚀刻是耐受的。
    • 10. 发明授权
    • Electronic coatings
    • 电子涂料
    • US6144106A
    • 2000-11-07
    • US939241
    • 1997-09-29
    • Clayton R. BearingerRobert Charles CamillettiLoren Andrew HaluskaKeith Winton Michael
    • Clayton R. BearingerRobert Charles CamillettiLoren Andrew HaluskaKeith Winton Michael
    • B05D7/00B05D7/24B32B9/00H01L21/312H01L23/29H01L23/31H01L23/58
    • H01L23/573H01L23/296H01L23/3192H01L2924/0002Y10S257/922
    • The instant invention pertains to a multi-layer tamper proof electronic coating wherein the first layer is a protecting layer produced from a preceramic silicon containing material and at least one filler. The second layer is a resin sealer coat produced from a sealer resin selected from the group consisting of colloidal inorganic-based siloxane resins, benzocyclobutene based resins, polyimide polymers, siloxane polyimides and parylenes. An optional third layer is a cap coating layer selected from SiO.sub.2 coating, SiO.sub.2 /ceramic oxide coating, silicon containing coatings, silicon carbon containing coatings, silicon nitrogen containing coatings, silicon oxygen nitrogen coatings, silicon nitrogen carbon containing coatings and/or diamond like coatings. An optional fourth layer is a resin overcoat produced from an overcoat resin selected from the group consisting of colloidal inorganic-based siloxane resins, benzocyclobutene based resins, polyimide polymers, siloxane polyimides, parylenes, photoresist polymers, siloxane room temperature vulcanizable compositions, or other organic polymer. The use of the multi-layer coating on the electronic device results in an electronic device that is resistant to analytical techniques such as ozone, UV-ozone, gaseous free radicals and ions, vapor or liquid borne reactive species, plasma, abrasion, radiation, light, wet etching and others; moisture; chemicals and other environmental contaminants; shock and erosion, delamination and/or separation.
    • 本发明涉及多层防篡改电子涂层,其中第一层是由含陶瓷硅材料和至少一种填料制成的保护层。 第二层是由选自胶体无机基硅氧烷树脂,苯并环丁烯基树脂,聚酰亚胺聚合物,硅氧烷聚酰亚胺和对二甲苯基的密封树脂制成的树脂密封剂涂层。 可选的第三层是选自SiO 2涂层,SiO 2 /陶瓷氧化物涂层,含硅涂层,含硅碳涂层,含硅氮涂层,硅氧氮涂层,含氮氮碳涂层和/或金刚石类涂层的覆盖层 。 任选的第四层是由选自胶体无机基硅氧烷树脂,苯并环丁烯基树脂,聚酰亚胺聚合物,硅氧烷聚酰亚胺,对二甲苯基,光致抗蚀剂聚合物,硅氧烷室温可硫化组合物或其它有机物的外涂层树脂生产的树脂外涂层 聚合物。 在电子设备上使用多层涂层导致电子装置耐分析技术如臭氧,紫外线臭氧,气态自由基和离子,蒸汽或液体反应物质,等离子体,磨损,辐射, 光,湿蚀等; 湿气; 化学品和其他环境污染物; 冲击和侵蚀,分层和/或分离。