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1. 发明授权

US07561009B2 Film bulk acoustic resonator (FBAR) devices with temperature compensation 有权
标题翻译：具有温度补偿的薄膜体声波谐振器（FBAR）器件
公开(公告)号：US07561009B2
公开(公告)日：2009-07-14
申请号：US11291674
申请日：2005-11-30
申请人： John D. Larson, III , John Choy , Donald E. Lee , Kevin J. Grannen , Hongjun Feng , Carrie A. Rogers , Urupattur C. Sridharan
发明人： John D. Larson, III , John Choy , Donald E. Lee , Kevin J. Grannen , Hongjun Feng , Carrie A. Rogers , Urupattur C. Sridharan
IPC分类号： H03H9/15 , H03H9/205 , H01L41/083
CPC分类号： H03H3/04 , H03H9/02102 , H03H9/131 , H03H9/132 , H03H9/173 , H03H9/584 , H03H9/587 , H03H9/605 , H03H2003/021 , H03H2003/0407
摘要： The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack that comprises an FBAR characterized by a resonant frequency having a temperature coefficient and a temperature-compensating layer comprising doped silicon dioxide. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency of the FBAR depends at least in part.
摘要翻译：温度补偿膜体声波谐振器（FBAR）装置包括FBAR堆叠，其包括以具有温度系数的谐振频率和包含掺杂二氧化硅的温度补偿层为特征的FBAR。 FBAR包括相对的平面电极和电极之间的压电元件。压电元件具有温度系数，FBAR的谐振频率的温度系数至少部分地取决于该温度系数。

2. 发明申请

US20100327701A1 Piezoelectric resonator structures having temperature compensation 有权
标题翻译：具有温度补偿的压电谐振器结构
公开(公告)号：US20100327701A1
公开(公告)日：2010-12-30
申请号：US12494886
申请日：2009-06-30
申请人： Kevin J. Grannen , Carrie A. Rogers , John Choy
发明人： Kevin J. Grannen , Carrie A. Rogers , John Choy
IPC分类号： H01L41/04 , H01L41/22
CPC分类号： H03H9/02102 , H01L41/18 , H03H3/04 , H03H9/173 , H03H9/583 , H03H9/587 , H03H2003/021 , H03H2003/0407 , H03H2003/0442 , Y10T29/42
摘要： An electrical resonator comprises a substrate comprising a cavity. The electrical resonator comprises a resonator stack suspended over the cavity. The resonator stack comprises a first electrode; a second electrode; a piezoelectric layer; and a temperature compensating layer comprising borosilicate glass (BSG).
摘要翻译：电谐振器包括包括空腔的基板。电谐振器包括悬挂在空腔上的谐振器堆叠。谐振器堆叠包括第一电极; 第二电极; 压电层; 和包含硼硅酸盐玻璃（BSG）的温度补偿层。

3. 发明授权

US09209776B2 Method of manufacturing an electrical resonator 有权
标题翻译：电谐振器的制造方法
公开(公告)号：US09209776B2
公开(公告)日：2015-12-08
申请号：US12494886
申请日：2009-06-30
申请人： Kevin J. Grannen , Carrie A. Rogers , John Choy
发明人： Kevin J. Grannen , Carrie A. Rogers , John Choy
IPC分类号： H04R31/00 , H03H9/02 , H03H3/04 , H03H9/17 , H03H9/58 , H03H3/02
CPC分类号： H03H9/02102 , H01L41/18 , H03H3/04 , H03H9/173 , H03H9/583 , H03H9/587 , H03H2003/021 , H03H2003/0407 , H03H2003/0442 , Y10T29/42
摘要： An electrical resonator comprises a substrate comprising a cavity. The electrical resonator comprises a resonator stack suspended over the cavity. The resonator stack comprises a first electrode; a second electrode; a piezoelectric layer; and a temperature compensating layer comprising borosilicate glass (BSG).
摘要翻译：电谐振器包括包括空腔的基板。电谐振器包括悬挂在空腔上的谐振器堆叠。谐振器堆叠包括第一电极; 第二电极; 压电层; 和包含硼硅酸盐玻璃（BSG）的温度补偿层。

4. 发明授权

US07345410B2 Temperature compensation of film bulk acoustic resonator devices 有权
标题翻译：薄膜体声波谐振器器件的温度补偿
公开(公告)号：US07345410B2
公开(公告)日：2008-03-18
申请号：US11386372
申请日：2006-03-22
申请人： Kevin J. Grannen , John Choy , Carrie A. Rogers
发明人： Kevin J. Grannen , John Choy , Carrie A. Rogers
IPC分类号： H01L41/047
CPC分类号： H03H9/02102 , H03H3/04 , H03H9/131 , H03H9/173 , H03H2003/021 , H03H2003/0407
摘要： A resonator. The resonator includes a bottom electrode overlaying at least part of a substrate, a composite structure overlaying at least part of the bottom electrode, and a top electrode overlaying at least part of the composite structure. The composite structure comprises a piezoelectric layer and a compensation layer, and the compensation layer includes silicon dioxide combined with boron.
摘要翻译：谐振器。谐振器包括覆盖基板的至少一部分的底部电极，覆盖底部电极的至少一部分的复合结构和覆盖复合结构的至少一部分的顶部电极。复合结构包括压电层和补偿层，补偿层包括与硼结合的二氧化硅。

5. 发明授权

US08796904B2 Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer 有权
标题翻译：包括压电层和反压电层的体声波谐振器
公开(公告)号：US08796904B2
公开(公告)日：2014-08-05
申请号：US13286051
申请日：2011-10-31
申请人： Dariusz Burak , Kevin J. Grannen , John D. Larson, III , Alexandre Shirakawa
发明人： Dariusz Burak , Kevin J. Grannen , John D. Larson, III , Alexandre Shirakawa
IPC分类号： H01L41/08 , H03H9/58
CPC分类号： H03H9/587 , H03H9/02015 , H03H9/132 , H03H9/173 , H03H9/584
摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode, the first piezoelectric layer having a first c-axis oriented along a first direction; a second electrode disposed over the first piezoelectric layer; and a second piezoelectric layer disposed over the first electrode and adjacent to the first piezoelectric layer, wherein the second piezoelectric layer has a second c-axis oriented in a second direction that is substantially antiparallel to the first direction.
摘要翻译：在代表性实施例中，体声波（BAW）谐振器包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层，所述第一压电层具有沿着第一方向取向的第一c轴; 设置在所述第一压电层上的第二电极; 以及第二压电层，其设置在所述第一电极上并且邻近所述第一压电层，其中所述第二压电层具有在与所述第一方向基本上反平行的第二方向上定向的第二c轴。

6. 发明授权

US09608589B2 Method of forming acoustic resonator using intervening seed layer 有权
公开(公告)号：US09608589B2
公开(公告)日：2017-03-28
申请号：US12911986
申请日：2010-10-26
申请人： Kevin J. Grannen , Chris Feng , Phil Nikkel , John Choy
发明人： Kevin J. Grannen , Chris Feng , Phil Nikkel , John Choy
IPC分类号： H03H3/02 , H01L41/314 , H01L41/317 , H03H9/17
CPC分类号： H03H3/02 , H01L41/314 , H01L41/317 , H01L41/319 , H03H9/173 , H03H9/175 , H03H2003/021 , H03H2003/025 , Y10T29/42
摘要： A method of forming an acoustic resonator includes forming a seed layer on a first electrode layer, forming a piezoelectric layer directly on a surface of the seed layer, and forming a second electrode layer on the piezoelectric layer. The piezoelectric layer includes multiple crystals of piezoelectric material, and the seed layer causes crystal axis orientations of the crystals to be substantially perpendicular to the surface of the seed layer.

7. 发明授权

US09065421B2 Film bulk acoustic resonator with multi-layers of different piezoelectric materials and method of making 有权
标题翻译：具有多层不同压电材料的薄膜体声共振器及制作方法
公开(公告)号：US09065421B2
公开(公告)日：2015-06-23
申请号：US13362321
申请日：2012-01-31
申请人： Chris Feng , John Choy , Kevin J. Grannen , Phil Nikkel , Tom Yeh
发明人： Chris Feng , John Choy , Kevin J. Grannen , Phil Nikkel , Tom Yeh
IPC分类号： H01L41/09 , H03H9/12 , H03H9/17 , H03H9/02 , H03H9/58
CPC分类号： H03H9/173 , H03H9/02149 , H03H9/171 , H03H9/178 , H03H9/585 , Y10T29/42
摘要： A thin film bulk acoustic resonator (FBAR) includes a first electrode, a first piezoelectric layer having a first c-axis orientation and on the first electrode, a second piezoelectric layer having a second c-axis orientation over the first piezoelectric layer, and a second electrode on the second piezoelectric layer. The first and second piezoelectric layers are made of respective different piezoelectric materials. The FBAR can be set to have different resonance frequencies by selecting the first and second c-axis orientations to be respectively the same or different. The high and low frequency range of the FBAR can thus be extended.
摘要翻译：薄膜体声波谐振器（FBAR）包括第一电极，具有第一c轴取向的第一压电层，在第一电极上具有在第一压电层上具有第二c轴取向的第二压电层，以及在第二压电层上的第二电极。第一和第二压电层由相应的不同的压电材料制成。通过选择第一和第二c轴取向分别相同或不同，可以将FBAR设置为具有不同的谐振频率。因此可以扩展FBAR的高低频范围。

8. 发明授权

US06312798B1 Magnetic recording medium having a nitrogen-doped hydrogenated carbon protective overcoat 失效
标题翻译：具有氮掺杂氢化碳保护外涂层的磁记录介质
公开(公告)号：US06312798B1
公开(公告)日：2001-11-06
申请号：US09400187
申请日：1999-09-21
申请人： Xiaoding Ma , Kevin J. Grannen , Jing Gui , Jeffrey A. McCann , Mark A. Shows
发明人： Xiaoding Ma , Kevin J. Grannen , Jing Gui , Jeffrey A. McCann , Mark A. Shows
IPC分类号： G11B572
CPC分类号： G11B5/72 , Y10T428/265 , Y10T428/30
摘要： Ion beam-deposited, nitrogen-doped C:H films having substantially lower resistivities than undoped ion beam-deposited C:H films and suitable for use as hard, abrasion-resistant overcoat layers for magnetic recording media, such as hard disks, are formed by supplying a mixture of hydrocarbon and nitrogen gases to an ion beam generator. Nitrogen atom content of the films is controlled to within from about 5 to about 25 at. % by appropriate selection of the ratio of hydrocarbon gas flow to nitrogen gas flow. The resultant IBD i-C:HN films exhibit a reduced tendency for charge build-up thereon during hard disk operation by virtue of their lower resistivity vis-à-vis conventional a-C:H materials.
摘要翻译：离子束沉积的氮掺杂的C：H膜具有比未掺杂的离子束沉积的C：H膜具有显着更低的电阻率，并且适合用作硬记录介质（例如硬盘）的硬的，耐磨损的外涂层通过向离子束发生器提供烃和氮气的混合物。将膜的氮原子含量控制在约5至约25at。通过适当选择碳氢化合物气体流量与氮气流量的比例来确定。所得到的IBD i-C：HN膜在硬盘操作期间由于其相对于常规a-C：H材料的较低电阻率而在其上积累电荷降低的倾向。

9. 发明授权

US06589641B1 Thin films of crosslinked fluoropolymer on a carbon substrate 失效
标题翻译：交联氟聚合物在碳基体上的薄膜
公开(公告)号：US06589641B1
公开(公告)日：2003-07-08
申请号：US09323510
申请日：1999-06-01
申请人： Michael J. Stirniman , Samuel J. Falcone , Li-Pang Wang , Kevin J. Grannen
发明人： Michael J. Stirniman , Samuel J. Falcone , Li-Pang Wang , Kevin J. Grannen
IPC分类号： G11B5725
CPC分类号： G11B5/725 , G11B5/656 , G11B5/72 , G11B5/7315 , Y10S428/90 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/3154 , Y10T428/31544
摘要： A material, preferably a magnetic data storage disc, includes a carbon layer covering at least a portion of a magnetic substrate and a crosslinked fluoropolymer layers covering at least-a portion of the carbon layer. The crosslinked polymer layer has a thickness less than about 40 angstroms, and the carbon layer has a thickness less than about 100 angstroms. Preferred fluoropolymers include, for example, perfluoropolyethers. In some embodiments, the crosslinked fluoropolymer layer has a thickness at one point on the carbon layer greater than the thickness crosslinked fluoropolymer layer at another point on the carbon layer. The crosslinking generally is performed by irradiating the lubricant material on the carbon layer.
摘要翻译：优选磁性数据存储盘的材料包括覆盖至少一部分磁性基底的碳层和覆盖至少一部分碳层的交联的氟聚合物层。交联聚合物层的厚度小于约40埃，碳层的厚度小于约100埃。优选的含氟聚合物包括例如全氟聚醚。在一些实施方案中，交联的含氟聚合物层在碳层上的一个点处的厚度大于碳层上另一点的交联氟聚合物厚度。交联通常通过在碳层上照射润滑剂材料来进行。

10. 发明授权

US06392244B1 Ion beam deposition of diamond-like carbon overcoats by hydrocarbon source gas pulsing 有权
标题翻译：通过烃源气体脉冲离子束沉积金刚石碳覆盖层
公开(公告)号：US06392244B1
公开(公告)日：2002-05-21
申请号：US09376495
申请日：1999-08-18
申请人： Kevin J. Grannen , Xiaoding Ma , Jing Gui
发明人： Kevin J. Grannen , Xiaoding Ma , Jing Gui
IPC分类号： H05H124
CPC分类号： C23C14/221 , C23C14/0605
摘要： Stable operation of an ion beam deposition (IBD) station forming part of a multi-station apparatus and formation therein of a tribologically robust DLC-type i-C:H ultra-thin protective overcoat for high recording density magnetic media are achieved by pulsing (i.e., limiting) the flow of a hydrocarbon source gas to the ion beam source to deposition intervals between substrate transfer/pressure cycling. Embodiments include utilizing a circularly-shaped, closed drift, end Hall type ion beam source as part of a multi-process station apparatus, wherein undesirable arcing of the ion beam source during substrate transfer is eliminated, or at least substantially reduced, as a result of the pulsed supply of hydrocarbon source gas to the ion beam source.
摘要翻译：形成多工位装置的一部分的离子束沉积（IBD）站的稳定操作，并且在其中形成用于高记录密度磁介质的摩擦学稳健的DLC型iC：H超薄保护外涂层通过脉冲（即，限制）烃源气体到离子束源的流动到衬底转移/压力循环之间的沉积间隔。实施例包括利用圆形封闭漂移端霍尔型离子束源作为多处理站装置的一部分，其中在衬底传送期间不期望的离子束源的电弧消除或至少大大减少将烃源气体脉冲供应给离子束源。

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