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    • 1. 发明授权
    • Leak detection method and micro-machined device assembly
    • 泄漏检测方法和微加工装置组装
    • US07026645B2
    • 2006-04-11
    • US10686299
    • 2003-10-15
    • John C. ChristensonDavid B. Rich
    • John C. ChristensonDavid B. Rich
    • H01L29/40H01L29/88
    • G01M3/40G01M3/186G01M3/226
    • The present invention involves an electrical verification method that detects moisture within the cavity of the semiconductor or micro-machined device. The method affects an increase in the time for sufficient water vapor to remain within an unsealed device, so that instability in the diode can be measurable over a longer period of time. The method begins with the step of forming at least one reservoir on at least one of the device wafer and the capping wafer. The at least one reservoir connects to at least one diffusion channel, which is in communication with at least one reservoir port. The method further includes the steps of forming a PN junction diode adjacent to the at least one reservoir port; bonding the device wafer with the capping wafer to form a cavity; and electrically testing the PN junction diode as an indication of the presence of moisture within the cavity. The device assembly of the present invention includes a capping wafer bonded on a device wafer to form a cavity; at least one reservoir including at least one diffusion channel for receiving a liquid and retaining moisture. The at least one diffusion channel communicates with at least one reservoir port, which is open into the cavity. An exposed PN junction diode is provided adjacent to the at least one reservoir port, and a pair of metal pads is connected to the exposed PN junction diode.
    • 本发明涉及检测半导体或微加工装置的空腔内的水分的电验证方法。 该方法影响足够的水蒸汽保持在未密封装置内的时间的增加,使得二极管中的不稳定性可以在更长的时间段内测量。 该方法开始于在装置晶片和封盖晶片中的至少一个上形成至少一个储存器的步骤。 至少一个储存器连接至少一个与至少一个贮存口连通的扩散通道。 该方法还包括以下步骤:在至少一个储存器端口附近形成PN结二极管; 用封盖晶片将器件晶片接合以形成空腔; 并且将PN结二极管电测试作为腔内存在水分的指示。 本发明的器件组件包括:接合在器件晶片上以形成空腔的封盖晶片; 至少一个储存器,其包括用于接收液体并保持水分的至少一个扩散通道。 至少一个扩散通道与至少一个开口进入空腔的储存口连通。 暴露的PN结二极管邻近所述至少一个储存器端口设置,并且一对金属焊盘连接到暴露的PN结二极管。
    • 8. 发明授权
    • Impact detector
    • 冲击检测器
    • US5177331A
    • 1993-01-05
    • US726099
    • 1991-07-05
    • David B. RichDan W. Chilcott
    • David B. RichDan W. Chilcott
    • G01L5/00G01P15/135H01H1/00H01H35/14
    • G01P15/135H01H1/0036H01H35/14H01H2001/0063H01H35/142
    • An impact detector includes a center chip of micromachined silicon, a top cap, and a back plate, with the center chip being sandwiched between the top cap and the back plate. The center chip is micromachined to provide a seismic mass, a perimeter ring, and a plurality of beams interconnecting the perimeter ring and the seismic mass. The center chip and back plate mount aligned switch contacts which close to each other when the seismic mass moves from its static or nondisplaced position to its operative or displaced position. An electrostatic attractive force is generated between the seismic mass and the back plate. This electrostatic attractive force is less than the tensile force applied to the seismic mass by the beams so that the seismic mass remains in its static or nondisplaced position unless the impact detector is subjected to an impulsive force of sufficient magnitude and duration such that the inertial reaction force of the seismic mass when coupled with the electrostatic attractive force is greater than the tensile force so that the seismic mass moves to the operative displaced position. In the operative displaced position, the electrostatic attractive force latches the switch contacts to each other until the electrostatic attractive force is reduced and the tensile force can then return the seismic mass to its static or nondisplaced position.