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1. 发明申请

US20120126358A1 TONE INVERSION WITH PARTIAL UNDERLAYER ETCH 失效
标题翻译：带有部分底层蚀刻的色调
公开(公告)号：US20120126358A1
公开(公告)日：2012-05-24
申请号：US12952248
申请日：2010-11-23
申请人： John C. Arnold , Sean D. Burns , Matthew E. Colburn , Steven J. Holmes , Yunpeng Yin
发明人： John C. Arnold , Sean D. Burns , Matthew E. Colburn , Steven J. Holmes , Yunpeng Yin
IPC分类号： H01L21/311 , H01L23/00 , H01L21/768
CPC分类号： H01L23/00 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L2924/0002 , H01L2924/00
摘要： A method for tone inversion for integrated circuit fabrication includes providing a substrate with an underlayer on top of the substrate; creating a first pattern, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; covering the first pattern with a layer of image reverse material (IRM); and etching the second pattern into the substrate. A structure for tone inversion for integrated circuit fabrication includes a substrate; a partially etched underlayer comprising a first pattern located over the substrate, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; and an image reversal material (IRM) layer located over the partially etched underlayer.
摘要翻译：用于集成电路制造的色调反转的方法包括：在衬底的顶部上提供具有底层的衬底; 产生第一图案，所述第一图案被部分地蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露位于所述底层下方的所述基板; 用一层图像反向材料（IRM）覆盖第一个图案; 并将第二图案刻蚀成衬底。用于集成电路制造的色调反转的结构包括：衬底; 部分蚀刻的底层包括位于所述衬底上方的第一图案，所述第一图案被部分地蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露底层位于底层下方; 以及位于部分蚀刻的底层上方的图像反转材料（IRM）层。

2. 发明授权

US08470711B2 Tone inversion with partial underlayer etch for semiconductor device formation 失效
标题翻译：用于半导体器件形成的部分底层蚀刻的色调反演
公开(公告)号：US08470711B2
公开(公告)日：2013-06-25
申请号：US12952248
申请日：2010-11-23
申请人： John C. Arnold , Sean D. Burns , Matthew E. Colburn , Steven J. Holmes , Yunpeng Yin
发明人： John C. Arnold , Sean D. Burns , Matthew E. Colburn , Steven J. Holmes , Yunpeng Yin
IPC分类号： H01L21/44
CPC分类号： H01L23/00 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L2924/0002 , H01L2924/00
摘要： A method for tone inversion for integrated circuit fabrication includes providing a substrate with an underlayer on top of the substrate; creating a first pattern, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; covering the first pattern with a layer of image reverse material (IRM); and etching the second pattern into the substrate. A structure for tone inversion for integrated circuit fabrication includes a substrate; a partially etched underlayer comprising a first pattern located over the substrate, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; and an image reversal material (IRM) layer located over the partially etched underlayer.
摘要翻译：用于集成电路制造的色调反转的方法包括：在衬底的顶部上提供具有底层的衬底; 产生第一图案，所述第一图案被部分地蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露位于所述底层下方的所述基板; 用一层图像反向材料（IRM）覆盖第一个图案; 并将第二图案刻蚀成衬底。用于集成电路制造的色调反转的结构包括：衬底; 部分蚀刻的底层包括位于所述衬底上方的第一图案，所述第一图案被部分蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露底层位于底层下方; 以及位于部分蚀刻的底层上方的图像反转材料（IRM）层。

3. 发明授权

US08883649B2 Sidewall image transfer process 有权
标题翻译：侧墙图像传输过程
公开(公告)号：US08883649B2
公开(公告)日：2014-11-11
申请号：US13069536
申请日：2011-03-23
申请人： Yunpeng Yin , John C. Arnold , Matthew E. Colburn , Sean D. Burns
发明人： Yunpeng Yin , John C. Arnold , Matthew E. Colburn , Sean D. Burns
IPC分类号： H01L21/302 , H01L21/461 , H01L21/033 , H01L21/311 , H01L21/3213 , H01L21/308
CPC分类号： H01L21/0337 , H01L21/3086 , H01L21/31144 , H01L21/32139
摘要： An improved method of performing sidewall spacer imager transfer is presented. The method includes forming a set of sidewall spacers next to a plurality of mandrels, the set of sidewall spacers being directly on top of a hard-mask layer; transferring image of at least a portion of the set of sidewall spacers to the hard-mask layer to form a device pattern; and transferring the device pattern from the hard-mask layer to a substrate underneath the hard-mask layer.
摘要翻译：提出了一种执行侧壁间隔成像器传输的改进方法。该方法包括在多个心轴旁边形成一组侧壁间隔物，该组侧壁间隔物直接位于硬掩模层的顶部上; 将所述一组侧壁间隔物的至少一部分图像转印到所述硬掩模层以形成器件图案; 并将器件图案从硬掩模层转移到硬掩模层下面的衬底。

4. 发明授权

US08119531B1 Mask and etch process for pattern assembly 有权
标题翻译：掩模和蚀刻工艺用于图案组装
公开(公告)号：US08119531B1
公开(公告)日：2012-02-21
申请号：US13013935
申请日：2011-01-26
申请人： John C. Arnold , Sean D. Burns , Matthew E. Colburn , Yunpeng Yin
发明人： John C. Arnold , Sean D. Burns , Matthew E. Colburn , Yunpeng Yin
IPC分类号： H01L21/311
CPC分类号： H01L21/0337 , H01L21/0331
摘要： A method of forming a trench is provided that includes providing a stack having a semiconductor layer or dielectric layer, a metal nitride layer, a leveling layer, and a first mask layer. First trenches are etched through the first mask layer and the leveling layer. The first mask layer is removed. A second mask layer is formed on the leveling layer. Second trenches are formed through the second mask layer, wherein the base of the second trenches do not extend through the metal nitride layer. The second mask layer is removed. Exposed portions of the metal nitride layer are etched selectively to the semiconductor layer and remaining portions of the leveling layer to extend the first trenches and the second trenches into contact with an upper surface of the semiconductor layer.
摘要翻译：提供一种形成沟槽的方法，其包括提供具有半导体层或电介质层的叠层，金属氮化物层，流平层和第一掩模层。通过第一掩模层和流平层蚀刻第一沟槽。第一个掩模层被去除。在平整层上形成第二掩模层。通过第二掩模层形成第二沟槽，其中第二沟槽的基极不延伸穿过金属氮化物层。去除第二掩模层。金属氮化物层的暴露部分被选择性地蚀刻到半导体层和平整层的剩余部分，以使第一沟槽和第二沟槽延伸与半导体层的上表面接触。

5. 发明申请

US20120244711A1 SIDEWALL IMAGE TRANSFER PROCESS 有权
标题翻译：边框图像传输过程
公开(公告)号：US20120244711A1
公开(公告)日：2012-09-27
申请号：US13069536
申请日：2011-03-23
申请人： Yunpeng Yin , John C. Arnold , Matthew E. Colburn , Sean D. Burns
发明人： Yunpeng Yin , John C. Arnold , Matthew E. Colburn , Sean D. Burns
IPC分类号： H01L21/31
CPC分类号： H01L21/0337 , H01L21/3086 , H01L21/31144 , H01L21/32139
摘要： An improved method of performing sidewall spacer imager transfer is presented. The method includes forming a set of sidewall spacers next to a plurality of mandrels, the set of sidewall spacers being directly on top of a hard-mask layer; transferring image of at least a portion of the set of sidewall spacers to the hard-mask layer to form a device pattern; and transferring the device pattern from the hard-mask layer to a substrate underneath the hard-mask layer.
摘要翻译：提出了一种执行侧壁间隔成像器传输的改进方法。该方法包括在多个心轴旁边形成一组侧壁间隔物，该组侧壁间隔物直接位于硬掩模层的顶部上; 将所述一组侧壁间隔物的至少一部分图像转印到所述硬掩模层以形成器件图案; 并将器件图案从硬掩模层转移到硬掩模层下面的衬底。

6. 发明授权

US08298954B1 Sidewall image transfer process employing a cap material layer for a metal nitride layer 失效
标题翻译：侧壁图像转印工艺采用金属氮化物层的盖材料层
公开(公告)号：US08298954B1
公开(公告)日：2012-10-30
申请号：US13102224
申请日：2011-05-06
申请人： John C. Arnold , Sean D. Burns , Matthew E. Colburn , David V. Horak , Yunpeng Yin
发明人： John C. Arnold , Sean D. Burns , Matthew E. Colburn , David V. Horak , Yunpeng Yin
IPC分类号： H01L21/311 , H01L21/302
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/32139 , H01L21/76816 , H01L21/76885
摘要： A cap material layer is deposited on a metal nitride layer. An antireflective coating (ARC) layer, an organic planarizing layer (OPL), and patterned line structures are formed upon the cap material layer. The pattern in the patterned line structures is transferred into the ARC layer and the OPL. Exposed portions of the cap material layer are etched simultaneously with the etch removal of the patterned line structures and the ARC layer. The OPL is employed to etch the metal nitride layer. The patterned cap material layer located over the metal nitride layer protects the top surface of the metal nitride layer, and enables high fidelity reproduction of the pattern in the metal nitride layer without pattern distortion. The metal nitride layer is subsequently employed as an etch mask for pattern transfer into an underlying layer.
摘要翻译：盖材料层沉积在金属氮化物层上。在盖材料层上形成抗反射涂层（ARC）层，有机平面化层（OPL）和图案化的线结构。图案线结构中的图案被转移到ARC层和OPL中。与图案化线结构和ARC层的蚀刻去除同时蚀刻盖材料层的暴露部分。采用OPL来蚀刻金属氮化物层。位于金属氮化物层之上的图案化盖材料层保护金属氮化物层的顶表面，并且能够在没有图案变形的情况下实现金属氮化物层中的图案的高保真度再现。随后将金属氮化物层用作用于图案转移到下层中的蚀刻掩模。

7. 发明申请

US20120282779A1 SIDEWALL IMAGE TRANSFER PROCESS EMPLOYING A CAP MATERIAL LAYER FOR A METAL NITRIDE LAYER 失效
标题翻译：使用金属氮化物层的CAP材料层的边框图像转移过程
公开(公告)号：US20120282779A1
公开(公告)日：2012-11-08
申请号：US13102224
申请日：2011-05-06
申请人： John C. Arnold , Sean D. Burns , Matthew E. Colburn , David V. Horak , Yunpeng Yin
发明人： John C. Arnold , Sean D. Burns , Matthew E. Colburn , David V. Horak , Yunpeng Yin
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/32139 , H01L21/76816 , H01L21/76885
摘要： A cap material layer is deposited on a metal nitride layer. An antireflective coating (ARC) layer, an organic planarizing layer (OPL), and patterned line structures are formed upon the cap material layer. The pattern in the patterned line structures is transferred into the ARC layer and the OPL. Exposed portions of the cap material layer are etched simultaneously with the etch removal of the patterned line structures and the ARC layer. The OPL is employed to etch the metal nitride layer. The patterned cap material layer located over the metal nitride layer protects the top surface of the metal nitride layer, and enables high fidelity reproduction of the pattern in the metal nitride layer without pattern distortion. The metal nitride layer is subsequently employed as an etch mask for pattern transfer into an underlying layer.
摘要翻译：盖材料层沉积在金属氮化物层上。在盖材料层上形成抗反射涂层（ARC）层，有机平面化层（OPL）和图案化的线结构。图案线结构中的图案被转移到ARC层和OPL中。与图案化线结构和ARC层的蚀刻去除同时蚀刻盖材料层的暴露部分。采用OPL来蚀刻金属氮化物层。位于金属氮化物层之上的图案化盖材料层保护金属氮化物层的顶表面，并且能够在没有图案变形的情况下实现金属氮化物层中的图案的高保真度再现。随后将金属氮化物层用作用于图案转移到下层中的蚀刻掩模。

8. 发明授权

US08053368B2 Method for removing residues from a patterned substrate 失效
标题翻译：从图案化衬底去除残留物的方法
公开(公告)号：US08053368B2
公开(公告)日：2011-11-08
申请号：US12055648
申请日：2008-03-26
申请人： Sean D. Burns , Matthew E. Colburn , Steven J. Holmes
发明人： Sean D. Burns , Matthew E. Colburn , Steven J. Holmes
IPC分类号： H01L21/311
CPC分类号： H01L21/0276 , G03F7/091 , G03F7/40
摘要： The present invention relates to a method for removing residues from open areas of a patterned substrate involving the steps of providing a layer of a developable anti-reflective coating (DBARC) over a substrate; providing a layer of a photoresist over said DBARC layer; pattern-wise exposing said photoresist layer and said DBARC layer to a radiation; developing said photoresist layer and said DBARC layer with a first developer to form patterned structures in said photoresist and DBARC layers; depositing a layer of a developer soluble material over said patterned structures; and removing said developer soluble material with a second developer.
摘要翻译：本发明涉及一种用于从图案化衬底的开放区域去除残留物的方法，包括以下步骤：在衬底上提供可显影抗反射涂层（DBARC）的层; 在所述DBARC层上提供一层光致抗蚀剂; 将所述光致抗蚀剂层和所述DBARC层图案化地曝光到辐射; 用第一显影剂显影所述光致抗蚀剂层和所述DBARC层以在所述光致抗蚀剂和DBARC层中形成图案化结构; 在所述图案化结构上沉积一层显影剂可溶性材料; 并用第二显影剂除去所述显影剂可溶性材料。

9. 发明申请

US20090246958A1 METHOD FOR REMOVING RESIDUES FROM A PATTERNED SUBSTRATE 失效
标题翻译：从图案基板上移除残留物的方法
公开(公告)号：US20090246958A1
公开(公告)日：2009-10-01
申请号：US12055648
申请日：2008-03-26
申请人： Sean D. Burns , Matthew E. Colburn , Steven J. Holmes
发明人： Sean D. Burns , Matthew E. Colburn , Steven J. Holmes
IPC分类号： H01L21/311
CPC分类号： H01L21/0276 , G03F7/091 , G03F7/40
摘要： The present invention relates to a method for removing residues from open areas of a patterned substrate involving the steps of providing a layer of a developable anti-reflective coating (DBARC) over a substrate; providing a layer of a photoresist over said DBARC layer; pattern-wise exposing said photoresist layer and said DBARC layer to a radiation; developing said photoresist layer and said DBARC layer with a first developer to form patterned structures in said photoresist and DBARC layers; depositing a layer of a developer soluble material over said patterned structures; and removing said developer soluble material with a second developer.
摘要翻译：本发明涉及一种用于从图案化衬底的开放区域去除残留物的方法，包括以下步骤：在衬底上提供可显影抗反射涂层（DBARC）的层; 在所述DBARC层上提供一层光致抗蚀剂; 将所述光致抗蚀剂层和所述DBARC层图案化地曝光到辐射; 用第一显影剂显影所述光致抗蚀剂层和所述DBARC层以在所述光致抗蚀剂和DBARC层中形成图案化结构; 在所述图案化结构上沉积一层显影剂可溶性材料; 并用第二显影剂除去所述显影剂可溶性材料。

10. 发明申请

US20110049680A1 DUAL EXPOSURE TRACK ONLY PITCH SPLIT PROCESS 有权
标题翻译：双重接触跟踪只能分离分离过程
公开(公告)号：US20110049680A1
公开(公告)日：2011-03-03
申请号：US12551801
申请日：2009-09-01
申请人： Sean D. Burns , Matthew E. Colburn , Steven J. Holmes
发明人： Sean D. Burns , Matthew E. Colburn , Steven J. Holmes
IPC分类号： H01L29/06 , G03F7/20 , H01L21/461
CPC分类号： H01L21/31144 , G03F7/0035 , H01L21/0271 , H01L21/0338
摘要： An integrated circuit is formed with structures spaced more closely together than a transverse dimension of such structures, such as for making contacts to electronic elements formed at minimum lithographically resolvable dimensions by dark field split pitch techniques. Acceptable overlay accuracy and process efficiency and throughput for the split pitch process that requires etching of a hard mark for each of a plurality of sequentially applied and patterned resist layers is supported by performing the etching of the hard mask entirely within a lithography track through using an acid sensitive hard mark material and an acidic overcoat which contacts areas of the hard mask through patterned apertures in the resist. The contacted areas of the hard mask are activated for development by baking of the acidic overcoat.
摘要翻译：集成电路形成为具有比这种结构的横向尺寸更紧密地在一起的结构，例如用于通过暗场分割俯仰技术以最小可光滑分辨尺寸形成的电子元件的接触。对于需要蚀刻多个顺序施加的和图案化的抗蚀剂层中的每一个的硬标记的分割间距处理的可接受的覆盖精度和处理效率和处理量通过使用酸敏感的硬标记材料和通过抗蚀剂中的图案化孔接触硬掩模的区域的酸性外涂层。通过烘烤酸性外涂层来激活硬掩模的接触区域以进行显影。

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