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1. 发明申请

US20070222497A1 METHOD OF IMPROVING FUSE STATE DETECTION AND YIELD IN SEMICONDUCTOR APPLICATIONS 有权
标题翻译：改进半导体应用中保险丝状态检测和电位的方法
公开(公告)号：US20070222497A1
公开(公告)日：2007-09-27
申请号：US11277315
申请日：2006-03-23
申请人： John Barwin , Steven Lamphier , Harold Pilo
发明人： John Barwin , Steven Lamphier , Harold Pilo
IPC分类号： H01H37/76
CPC分类号： G11C17/18 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： Disclosed are embodiments of an apparatus incorporating a detection circuit adapted for determining the state of selected fuses and a programming circuit for blowing selected fuses on demand. Also, disclosed are embodiments of an associated method. The detection circuit comprises a plurality of fuses in identical signal and reference legs in order to increase the signal margin for detecting blown fuses and/or current sources configured to pass offset currents through the signal and reference legs in order to set the trip point for detecting blown fuses between the un-blown and the minimum blown resistances. Thus, the invention provides the flexibility of single-sided fuse state detection devices with even greater sensitivity than both single-sided and differential fuse state detection device.
摘要翻译：公开了一种装置的实施例，其包括适于确定所选保险丝的状态的检测电路和用于根据需要吹送选定保险丝的编程电路。此外，公开了相关方法的实施例。检测电路包括相同的信号和参考支路中的多个保险丝，以便增加用于检测熔断熔丝和/或电流源的信号余量，该熔断器和/或电流源被配置为使偏移电流通过信号和参考支路，以便设置用于检测的跳闸点在未吹塑和最小吹塑电阻之间熔断熔断器。因此，本发明提供具有比单面和差分熔丝状态检测装置更高灵敏度的单面熔丝状态检测装置的灵活性。

2. 发明申请

US20050157546A1 Precharging the write path of an MRAM device for fast write operation 失效
标题翻译：对MRAM设备的写入路径进行预充电以进行快速写入操作
公开(公告)号：US20050157546A1
公开(公告)日：2005-07-21
申请号：US10758449
申请日：2004-01-15
申请人： Stefan Lammers , Hans-Heinrich Viehmann , Thomas Maffitt , John Barwin
发明人： Stefan Lammers , Hans-Heinrich Viehmann , Thomas Maffitt , John Barwin
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： G11C11/16
摘要： The write path of an MRAM device is precharged before starting a write operation of a magnetic memory cell, increasing the speed of the write operation and decreasing the write cycle time. The reference wires are precharged, which provides better control over the wordline and bitline write pulses and results in shorter rise times. The precharge time can be hidden in the address decoding time or redundancy evaluation time. A circuit design for a global reference current generator is also described herein. A fast on circuit is also disclosed that increases the speed of precharging the reference wires.
摘要翻译：在开始磁存储单元的写操作之前，MRAM器件的写入路径被预充电，增加了写操作的速度并减小了写周期时间。参考线是预充电的，可以更好地控制字线和位线写入脉冲，从而缩短上升时间。预充电时间可以隐藏在地址解码时间或冗余评估时间内。本文还描述了用于全局参考电流发生器的电路设计。还公开了一种快速接通电路，其增加对参考线预充电的速度。

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