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1. 发明授权

US07975096B2 Storage system having multiple non-volatile memories, and controller and access method thereof 有权
标题翻译：具有多个非易失性存储器的存储系统及其控制器及其访问方法
公开(公告)号：US07975096B2
公开(公告)日：2011-07-05
申请号：US12197468
申请日：2008-08-25
申请人： Jiunn-Yeong Yang , Chien-Hua Chu , Kuo-Yi Cheng , Li-Chun Liang , Chih-Kang Yeh
发明人： Jiunn-Yeong Yang , Chien-Hua Chu , Kuo-Yi Cheng , Li-Chun Liang , Chih-Kang Yeh
IPC分类号： G06F12/00
CPC分类号： G06F12/06 , G06F2212/2022
摘要： A non-volatile memory storage system including a transmission interface, a memory module, and a controller is provided. The memory module includes first and second non-volatile memory chips. The first and the second non-volatile memory chips can be simultaneously enabled by receiving a chip enable signal from the controller via a chip enable pin. When the controller performs a multichannel access, the controller provides an access instruction to the first and second non-volatile memory chip, after enabling the first non-volatile memory chip and the second non-volatile memory chip with the chip enable signal. When the controller performs a single channel access, the controller provides the access signal to one of the first and second non-volatile memory chips, and provides a non-access instruction to the other one, after enabling the first non-volatile memory chip and the second non-volatile memory chip with the chip enable signal.
摘要翻译：提供了包括传输接口，存储器模块和控制器的非易失性存储器存储系统。存储器模块包括第一和第二非易失性存储器芯片。可以通过经由芯片使能引脚从控制器接收芯片使能信号来同时启用第一和第二非易失性存储器芯片。当控制器执行多通道访问时，在使能具有芯片使能信号的第一非易失性存储器芯片和第二非易失性存储器芯片之后，控制器向第一和第二非易失性存储器芯片提供访问指令。当控制器执行单通道访问时，控制器将访问信号提供给第一和第二非易失性存储器芯片中的一个，并且在启用第一非易失性存储器芯片之后，向另一个提供非访问指令，具有芯片使能信号的第二非易失性存储器芯片。

2. 发明申请

US20090300271A1 STORAGE SYSTEM HAVING MULTIPLE NON-VOLATILE MEMORIES, AND CONTROLLER AND ACCESS METHOD THEREOF 有权
标题翻译：具有多个非易失性存储器的存储系统及其控制器及其访问方法
公开(公告)号：US20090300271A1
公开(公告)日：2009-12-03
申请号：US12197468
申请日：2008-08-25
申请人： Jiunn-Yeong Yang , Chien-Hua Chu , Kuo-Yi Cheng , Li-Chun Liang , Chih-Kang Yeh
发明人： Jiunn-Yeong Yang , Chien-Hua Chu , Kuo-Yi Cheng , Li-Chun Liang , Chih-Kang Yeh
IPC分类号： G06F12/02 , G06F12/00
CPC分类号： G06F12/06 , G06F2212/2022
摘要： A non-volatile memory storage system including a transmission interface, a memory module, and a controller is provided. The memory module includes first and second non-volatile memory chips. The first and the second non-volatile memory chips can be simultaneously enabled by receiving a chip enable signal from the controller via a chip enable pin. When the controller performs a multichannel access, the controller provides an access instruction to the first and second non-volatile memory chip, after enabling the first non-volatile memory chip and the second non-volatile memory chip with the chip enable signal. When the controller performs a single channel access, the controller provides the access signal to one of the first and second non-volatile memory chips, and provides a non-access instruction to the other one, after enabling the first non-volatile memory chip and the second non-volatile memory chip with the chip enable signal.
摘要翻译：提供了包括传输接口，存储器模块和控制器的非易失性存储器存储系统。存储器模块包括第一和第二非易失性存储器芯片。可以通过经由芯片使能引脚从控制器接收芯片使能信号来同时启用第一和第二非易失性存储器芯片。当控制器执行多通道访问时，在使能具有芯片使能信号的第一非易失性存储器芯片和第二非易失性存储器芯片之后，控制器向第一和第二非易失性存储器芯片提供访问指令。当控制器执行单通道访问时，控制器将访问信号提供给第一和第二非易失性存储器芯片中的一个，并且在启用第一非易失性存储器芯片之后提供另一个非访问指令，具有芯片使能信号的第二非易失性存储器芯片。

3. 发明授权

US08606987B2 Data writing method for flash memory and controller using the same 有权
标题翻译： Flash存储器的数据写入方法及使用其的控制器
公开(公告)号：US08606987B2
公开(公告)日：2013-12-10
申请号：US12052348
申请日：2008-03-20
申请人： Jiunn-Yeong Yang , Jui-Hsien Chang , Chien-Hua Chu , Jian-Yo Su , Chih-Kang Yeh
发明人： Jiunn-Yeong Yang , Jui-Hsien Chang , Chien-Hua Chu , Jian-Yo Su , Chih-Kang Yeh
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28
CPC分类号： G06F12/0246 , G06F2212/7203
摘要： A data writing method for a flash memory is provided. The data writing method includes: dividing a new data into at lease one sub-data by the size of a writing unit; selecting one of a plurality of spare blocks from the flash memory as a substitute block for substituting a data block, wherein the new data is to be written into the data block; sequentially writing the sub-data having the size of the writing unit into the substitute block in the writing unit; and storing the sub-data not having the size of the writing unit into a temporary area. The writing efficiency of the flash memory can be improved by temporarily storing the sub-data not having the size of the writing unit into the temporary area and then writing the sub-data not having the size of the writing unit with subsequent data into the substitute block.
摘要翻译：提供了一种用于闪速存储器的数据写入方法。数据写入方法包括：按照写入单元的大小将新数据划分为至少一个子数据; 从闪存中选择多个备用块中的一个作为用于替换数据块的替代块，其中新数据将被写入数据块; 将具有写入单元的大小的子数据顺序地写入写入单元中的替代块; 并将不具有写入单元大小的子数据存储在临时区域中。通过将不具有写入单元的大小的子数据临时存储到临时区域中，然后将不具有后续数据的具有写入单元的大小的子数据写入替代物，可以提高闪速存储器的写入效率块。

4. 发明申请

US20100042774A1 BLOCK MANAGEMENT METHOD FOR FLASH MEMORY, AND STORAGE SYSTEM AND CONTROLLER USING THE SAME 审中-公开
标题翻译：闪存存储器的块管理方法，存储系统和使用该存储器的控制器
公开(公告)号：US20100042774A1
公开(公告)日：2010-02-18
申请号：US12265429
申请日：2008-11-05
申请人： Jiunn-Yeong Yang , Chien-Hua Chu , Chih-Kang Yeh , Kuang-Tung Fang , Jui-Hsien Chang
发明人： Jiunn-Yeong Yang , Chien-Hua Chu , Chih-Kang Yeh , Kuang-Tung Fang , Jui-Hsien Chang
IPC分类号： G06F12/02 , G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7208
摘要： A block management method for a flash memory chip having multiple planes is provided, wherein each plane has a plurality of physical blocks. The method includes disposing a plurality of physical units, wherein each physical unit includes a physical block of each plane, and the physical blocks in the physical unit have a simultaneously-operable relationship. The method also includes writing data in a single plane access mode when a host system does not update all the physical blocks in an updated the physical unit. The method further includes writing the data in a multi-planes access mode when the host system updates all the physical blocks in the updated physical unit, wherein the physical blocks for writing the data have the simultaneously-operable relationship.
摘要翻译：提供了一种具有多个平面的闪存芯片的块管理方法，其中每个平面具有多个物理块。该方法包括布置多个物理单元，其中每个物理单元包括每个平面的物理块，物理单元中的物理块具有同时可操作的关系。该方法还包括当主机系统不更新更新的物理单元中的所有物理块时，以单平面访问模式写入数据。该方法还包括当主机系统更新更新的物理单元中的所有物理块时，以多平面访问模式写入数据，其中用于写入数据的物理块具有同时可操作的关系。

5. 发明申请

US20090150597A1 DATA WRITING METHOD FOR FLASH MEMORY AND CONTROLLER USING THE SAME 有权
标题翻译：闪存存储器的数据写入方法和使用该存储器的控制器
公开(公告)号：US20090150597A1
公开(公告)日：2009-06-11
申请号：US12052348
申请日：2008-03-20
申请人： Jiunn-Yeong Yang , Jui-Hsien Chang , Chien-Hua Chu , Jian-Yo Su , Chih-Kang Yeh
发明人： Jiunn-Yeong Yang , Jui-Hsien Chang , Chien-Hua Chu , Jian-Yo Su , Chih-Kang Yeh
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7203
摘要： A data writing method for a flash memory is provided. The data writing method includes: dividing a new data into at lease one sub-data by the length of a writing unit; selecting one of a plurality of spare blocks from the flash memory as a substitute block for substituting a data block, wherein the new data is to be written into the data block; sequentially writing the sub-data having the length of the writing unit into the substitute block in the writing unit; and storing the sub-data not having the length of the writing unit into a temporary area. The writing efficiency of the flash memory can be improved by temporarily storing the sub-data not having the length of the writing unit into the temporary area and then writing the sub-data not having the length of the writing unit with subsequent data into the substitute block.
摘要翻译：提供了一种用于闪速存储器的数据写入方法。数据写入方法包括：将新数据分割为一个写入单元长度的一个子数据; 从闪存中选择多个备用块中的一个作为用于替换数据块的替代块，其中新数据将被写入数据块; 将具有写入单元的长度的子数据顺序地写入写入单元中的替换块; 以及将不具有写入单元的长度的子数据存储在临时区域中。通过将不具有写入单元的长度的子数据临时存储到临时区域中，然后将不具有写入单元的长度的子数据与后续数据写入替代物，可以提高闪速存储器的写入效率块。

6. 发明授权

US08074148B2 Memory management method and controller for non-volatile memory storage device 有权
标题翻译：非易失性存储器的内存管理方法和控制器
公开(公告)号：US08074148B2
公开(公告)日：2011-12-06
申请号：US12186711
申请日：2008-08-06
申请人： Chien-Hua Chu , Kuo-Yi Cheng , Chih-Kang Yeh
发明人： Chien-Hua Chu , Kuo-Yi Cheng , Chih-Kang Yeh
IPC分类号： G11C29/00
CPC分类号： G06F11/1068
摘要： A memory management method and a controller for a non-volatile memory storage device are provided. The memory management method and the controller are adapted for establishing a logical-to-physical mapping table of each block in a memory buffer of the controller by merely reading the data stored in a system management area within a start page of each block, so as to promote the management efficiency of the non-volatile memory storage device. In addition, the method and the controller of the present invention integrate all of or a part of the system management areas within the start page for efficiently managing and using the memory capacity of all the system management areas within the start page.
摘要翻译：提供了一种用于非易失性存储器存储装置的存储器管理方法和控制器。存储器管理方法和控制器适于通过仅读取存储在每个块的起始页面中的系统管理区域中的数据来建立控制器的存储器缓冲器中的每个块的逻辑到物理映射表，以便提升非易失性存储设备的管理效率。此外，本发明的方法和控制器将起始页面内的系统管理区域的全部或一部分整合起来，以有效地管理和使用起始页面内的所有系统管理区域的存储器容量。

7. 发明申请

US20090287877A1 MULTI NON-VOLATILE MEMORY CHIP PACKAGED STORAGE SYSTEM AND CONTROLLER AND ACCESS METHOD THEREOF 审中-公开
标题翻译：多个非易失性存储器芯片包装存储系统和控制器及其访问方法
公开(公告)号：US20090287877A1
公开(公告)日：2009-11-19
申请号：US12197460
申请日：2008-08-25
申请人： Chien-Hua Chu , Kuo-Yi Cheng , Chih-Kang Yeh
发明人： Chien-Hua Chu , Kuo-Yi Cheng , Chih-Kang Yeh
IPC分类号： G06F12/02
CPC分类号： G06F13/1668
摘要： A multi non-volatile memory chip packaged storage system having a memory module, a controller, a first and a second control buses and a first and a second I/O buses is provided. The memory module at least includes a first and a second non-volatile memory chips which are both enabled by receiving a chip enabled signal via a chip enabled pin, wherein the memory module and the controller are stacked and packaged as a single chip. After the first and the second non-volatile memory chips are enabled by the chip enable signal via the chip enabled pin, the controller may active the first and second control buses and the first and second I/O buses to access the first and the second non-volatile memory chips, or only active the first control and I/O buses or the second control and I/O buses to access the corresponding first or second non-volatile memory chip.
摘要翻译：提供具有存储器模块，控制器，第一和第二控制总线以及第一和第二I / O总线的多非易失性存储器芯片封装存储系统。存储器模块至少包括第一和第二非易失性存储器芯片，其通过经由芯片使能引脚接收芯片使能信号而被启用，其中存储器模块和控制器被堆叠并封装为单个芯片。在第一和第二非易失性存储器芯片通过芯片使能引脚使能芯片使能信号之后，控制器可以使第一和第二控制总线以及第一和第二I / O总线进入第一和第二或者仅使第一控制和I / O总线或第二控制和I / O总线有效地访问对应的第一或第二非易失性存储器芯片。

8. 发明申请

US20090248961A1 MEMORY MANAGEMENT METHOD AND CONTROLLER FOR NON-VOLATILE MEMORY STORAGE DEVICE 有权
标题翻译：用于非易失性存储器件的存储器管理方法和控制器
公开(公告)号：US20090248961A1
公开(公告)日：2009-10-01
申请号：US12186711
申请日：2008-08-06
申请人： Chien-Hua Chu , Kuo-Yi Cheng , Chih-Kang Yeh
发明人： Chien-Hua Chu , Kuo-Yi Cheng , Chih-Kang Yeh
IPC分类号： G06F12/02 , H03M13/09
CPC分类号： G06F11/1068
摘要： A memory management method and a controller for a non-volatile memory storage device are provided. The memor management method and the controller are adapted for establishing a logical-to-physical mapping table of each block in a memory buffer of the controller by merely reading the data stored in a system management area within a start page of each block, so as to promote the management efficiency of the non-volatile memory storage device. In addition, the method and the controller of the present invention integrate all of or a part of the system management areas within the start page for efficiently managing and using the memory capacity of all the system management areas within the start page.
摘要翻译：提供了一种用于非易失性存储器存储装置的存储器管理方法和控制器。存储器管理方法和控制器适于通过仅读取存储在每个块的起始页面中的系统管理区域中的数据来在控制器的存储器缓冲器中建立每个块的逻辑到物理映射表，以便提升非易失性存储设备的管理效率。此外，本发明的方法和控制器将起始页面内的系统管理区域的全部或一部分整合起来，以有效地管理和使用起始页面内的所有系统管理区域的存储器容量。

9. 发明授权

US08131911B2 Data writing method, and flash storage system and controller using the same 有权
标题翻译：数据写入方式，以及Flash存储系统和控制器的使用方法
公开(公告)号：US08131911B2
公开(公告)日：2012-03-06
申请号：US12147969
申请日：2008-06-27
申请人： Jiunn-Yeong Yang , Chih-Kang Yeh
发明人： Jiunn-Yeong Yang , Chih-Kang Yeh
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/1024 , G06F2212/7202
摘要： A data writing method, and a flash storage system and a controller using the same are provided. The method includes grouping the physical blocks of a flash memory into the physical blocks of a data area, a spare area and a special area. The method also includes writing the update data into the corresponding physical block of the special area when the update data is the single accessing unit. The method may include moving a part of valid data in a physical block mapping a logical block where the update data is belonged into a physical block of the spare area during each data writing command. Accordingly, it is possible to reduce the response time for each data writing command, thereby preventing a time-out problem caused by a flash memory having a large erasing unit configured at the flash storage system.
摘要翻译：提供数据写入方法，闪存存储系统和使用它们的控制器。该方法包括将闪存的物理块分组成数据区，备用区和特殊区的物理块。该方法还包括当更新数据是单个访问单元时将更新数据写入特殊区域的相应物理块。该方法可以包括在每个数据写入命令期间将映射到更新数据所属的逻辑块的物理块中的一部分有效数据移动到备用区的物理块中。因此，可以减少每个数据写入命令的响应时间，从而防止由闪存存储系统配置的具有大擦除单元的闪速存储器引起的超时问题。

10. 发明申请

US20090265505A1 DATA WRITING METHOD, AND FLASH STORAGE SYSTEM AND CONTROLLER USING THE SAME 有权
标题翻译：数据写入方法和闪存存储系统以及使用它的控制器
公开(公告)号：US20090265505A1
公开(公告)日：2009-10-22
申请号：US12147969
申请日：2008-06-27
申请人： Jiunn-Yeong Yang , Chih-Kang Yeh
发明人： Jiunn-Yeong Yang , Chih-Kang Yeh
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/1024 , G06F2212/7202
摘要： A data writing method, and a flash storage system and a controller using the same are provided. The method includes grouping the physical blocks of a flash memory into the physical blocks of a data area, a spare area and a special area. The method also includes writing the update data into the corresponding physical block of the special area when the update data is the single accessing unit. The method may include moving a part of valid data in a physical block mapping a logical block where the update data is belonged into a physical block of the spare area during each data writing command. Accordingly, it is possible to reduce the response time for each data writing command, thereby preventing a time-out problem caused by a flash memory having a large erasing unit configured at the flash storage system.
摘要翻译：提供数据写入方法，闪存存储系统和使用它们的控制器。该方法包括将闪存的物理块分组成数据区，备用区和特殊区的物理块。该方法还包括当更新数据是单个访问单元时将更新数据写入特殊区域的相应物理块。该方法可以包括在每个数据写入命令期间将映射到更新数据所属的逻辑块的物理块中的一部分有效数据移动到备用区的物理块中。因此，可以减少每个数据写入命令的响应时间，从而防止由闪存存储系统配置的具有大擦除单元的闪速存储器引起的超时问题。

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