专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080128055A1 Annealing-induced extensive solid-state amorphization in metallic films 审中-公开
标题翻译：在金属膜中退火引起的大量固态非晶化
公开(公告)号：US20080128055A1
公开(公告)日：2008-06-05
申请号：US12068146
申请日：2008-02-04
申请人： Jinn P. Chu , Chun-Hsin Kuo , Chang-Ting Lo
发明人： Jinn P. Chu , Chun-Hsin Kuo , Chang-Ting Lo
IPC分类号： C21D1/68 , C23C14/35
CPC分类号： C22C45/00
摘要： An thin film alloy based on chemical elements with high glass forming ability is disclosed. The alloy is deposited as a thin film from a source of substantially the same chemical composition. Within the deposited thin film, amorphization is induced extensively up to decades of micrometers in size during controlled annealing. Such controllable extensive amorphization throughout the thin film is useful to regulate the proportion of amorphous phase to crystalline phase, establish the structure/property relationships and thus tailor specific properties.
摘要翻译：公开了一种基于具有高玻璃形成能力的化学元素的薄膜合金。该合金作为薄膜从基本上相同的化学组成的源沉积。在沉积的薄膜内，在受控退火期间，非晶化在尺寸上被广泛诱导至几十微米。整个薄膜的这种可控广泛的非晶化可用于调节无定形相与结晶相的比例，建立结构/性质关系，从而调整特定性能。

2. 发明申请

US20110164345A1 METAL-INSULATOR-METAL CAPACITOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：金属绝缘体金属电容器及其制造方法
公开(公告)号：US20110164345A1
公开(公告)日：2011-07-07
申请号：US12779306
申请日：2010-05-13
申请人： Jinn P. Chu , Cheng-Hui Wu , Chon-Hsin Lin
发明人： Jinn P. Chu , Cheng-Hui Wu , Chon-Hsin Lin
IPC分类号： H01G4/008 , B05D5/12 , C23C14/34
CPC分类号： C23C14/185 , H01G4/008 , H01G4/33 , H01L23/5223 , H01L23/53238 , H01L28/60 , H01L28/65 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a metal-insulator-metal capacitor, which includes: a substrate, a copper-based bottom electrode overlying the substrate, wherein the copper based bottom electrode is doped with rhenium nitride or ruthenium nitride, a top electrode overlying the copper based bottom electrode, and a capacitor insulator between and adjoining the copper based bottom electrode and the top electrode.
摘要翻译：本发明提供一种金属绝缘体金属电容器，其包括：基板，覆盖基板的铜基底部电极，其中铜基底部电极掺杂有氮化钌或氮化钌，覆盖铜基的顶部电极底部电极和位于铜基底部电极和顶部电极之间并与之相邻的电容器绝缘体。

3. 发明申请

US20100132978A1 WHISKER-FREE COATING STRUCTURE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：无刷涂层结构及其制造方法
公开(公告)号：US20100132978A1
公开(公告)日：2010-06-03
申请号：US12471162
申请日：2009-05-22
申请人： Yee-Wen YEN , Jinn P. Chu , Chon-Hsin Lin , Chun-Lei Hsu , Chao-Kang Li
发明人： Yee-Wen YEN , Jinn P. Chu , Chon-Hsin Lin , Chun-Lei Hsu , Chao-Kang Li
IPC分类号： H01B5/00 , C23C14/35 , C25D5/00
CPC分类号： C25D5/34 , C23C14/165 , C23C14/584 , C23C28/021 , C23C28/023 , C25D5/505
摘要： A whisker-free coating structure and a method for fabricating the same are disclosed. The whisker-free coating structure includes a substrate, a tungsten doped copper layer overlaying the substrate, and a lead-free tin layer overlaying the tungsten doped copper layer.
摘要翻译：公开了一种不含无晶须的涂层结构及其制造方法。不含晶须的涂层结构包括衬底，覆盖衬底的钨掺杂铜层和覆盖钨掺杂铜层的无铅锡层。

4. 发明授权

US09334560B2 Application of metallic glass and metallic glass thin film coating on the sharpness enhancement of cutting tools 有权
标题翻译：金属玻璃和金属玻璃薄膜涂层对切削刀具的锐度增强的应用
公开(公告)号：US09334560B2
公开(公告)日：2016-05-10
申请号：US13605688
申请日：2012-09-06
申请人： Jason Shiang Ching Jang , Pei Hua Tsai , Jia Bin Li , Yu Ze Lin , Chih Chiang Fu , Jinn P. Chu
发明人： Jason Shiang Ching Jang , Pei Hua Tsai , Jia Bin Li , Yu Ze Lin , Chih Chiang Fu , Jinn P. Chu
IPC分类号： C22C45/10 , C23C14/16 , C23C14/34 , C23C30/00 , B32B15/01 , C22C1/00 , B22D7/00 , B22D18/06
CPC分类号： C23C14/165 , B22D7/005 , B22D18/06 , B32B15/01 , C22C1/002 , C22C45/10 , C23C14/3414 , C23C30/00 , Y10T83/929 , Y10T83/9403 , Y10T428/12778 , Y10T428/12806
摘要： A cutting tool having a metallic glass thin film (MGTF) coated thereon, a metallic glass cutting tool, and methods of fabricating the same are disclosed. The cutting tool having metallic glass thin film coated thereon comprises: a cutting element having a sharpened portion, and the cutting element is made of metal; and a metallic glass thin film coated on the cutting element, and the metallic glass is represented by the following formula 1 or formula 2, (ZraCubNicAld)100-xSix, [formula 1] wherein 45=
摘要翻译：公开了一种其上涂覆有金属玻璃薄膜（MGTF）的切削工具，金属玻璃切割工具及其制造方法。其上涂有金属玻璃薄膜的切削工具包括：具有锐化部分的切割元件，切割元件由金属制成; 和金属玻璃薄膜涂覆在切割元件上，金属玻璃由下式1或式2表示（ZraCubNicAld）100-xSix，[式1]其中45 =

5. 发明申请

US20110147936A1 SEMICONDUCTOR DEVICE AND DAMASCENE STRUCTURE 审中-公开
标题翻译：半导体器件和大气结构
公开(公告)号：US20110147936A1
公开(公告)日：2011-06-23
申请号：US12776414
申请日：2010-05-09
申请人： Jinn P. Chu , Tung-Yuan Yu , Chon-Hsin Lin
发明人： Jinn P. Chu , Tung-Yuan Yu , Chon-Hsin Lin
IPC分类号： H01L23/532
CPC分类号： H01L23/53238 , H01L21/76841 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a semiconductor device, including a silicon-containing material, a conductive layer deposited on the silicon-containing material, and a diffusion barrier layer interposed between the silicon-containing material and the conductive layer, wherein the diffusion barrier layer contains a rare earth scandate. The present invention further provides a damascene structure containing the rare earth scandate as diffusion barrier.
摘要翻译：本发明提供了一种半导体器件，其包括含硅材料，沉积在含硅材料上的导电层和介于含硅材料和导电层之间的扩散阻挡层，其中扩散阻挡层包含稀土钪本发明还提供一种含有稀土钪酸盐作为扩散阻挡层的镶嵌结构。

6. 发明申请

US20070281457A1 Copper layer and a method for manufacturing said copper layer 审中-公开
标题翻译：铜层及其制造方法
公开(公告)号：US20070281457A1
公开(公告)日：2007-12-06
申请号：US11604756
申请日：2006-11-28
申请人： Jinn P. Chu , Chon-Hsin Lin
发明人： Jinn P. Chu , Chon-Hsin Lin
IPC分类号： H01L21/44
CPC分类号： H01L21/2855 , H01L21/76855 , H01L21/76876
摘要： A copper layer on a substrate has a copper seed layer and an interface. The copper seed layer contains insoluble substances that are insoluble with copper. The interface is formed between the copper seed layer and the substrate. The copper layer replaces a conventional barrier and has significantly improved thermal stability to obtain some properties such as a fine microstructure, high thermal stability and an excellent low electrical resistivity. The copper seed layer is formed by a sputtering process in a vacuum and clean atmosphere with an operational gas of argon or a mixture of argon and a trace-amount of nitrogen. The interface is formed when the copper layer on the substrate are annealed. The insoluble substances in the copper seed layer are in a range of 0.5 to 3.5 atom % and are high-temperature metals and high-temperature metal nitrides with the nitrides being than 2.0 atom %.
摘要翻译：基板上的铜层具有铜种子层和界面。铜种子层含有不溶于铜的不溶物质。界面形成在铜籽晶层和基底之间。铜层取代了常规的屏障，并且具有显着改善的热稳定性，以获得一些性能，例如微细微结构，高热稳定性和优异的低电阻率。通过溅射工艺在真空和清洁的气氛中通过氩气或氩气和微量氮的混合物的操作气体形成铜籽晶层。当衬底上的铜层退火时形成界面。铜种子层中的不溶物质为0.5〜3.5原子％的范围，为氮化物为2.0原子％以下的高温金属和高温金属氮化物。

7. 发明申请

US20130244054A1 COMPOSITE MATERIAL AND METHOD FOR IMPROVING FATIGUE PROPERTIES OF TITANIUM ALLOY BY COATING METALLIC GLASS LAYER 审中-公开
标题翻译：通过涂覆金属玻璃层来改善钛合金疲劳性能的复合材料和方法
公开(公告)号：US20130244054A1
公开(公告)日：2013-09-19
申请号：US13544998
申请日：2012-07-10
申请人： Jinn P. Chu , Cheng-Min Lee , Shian-Ching Jang
发明人： Jinn P. Chu , Cheng-Min Lee , Shian-Ching Jang
IPC分类号： B32B15/04 , C23C14/35
CPC分类号： C23C14/165 , C23C14/025 , Y10T428/12604 , Y10T428/265
摘要： The invention provides a composite material, which includes a titanium alloy substrate and a metallic glass layer. The metallic glass layer is disposed on the titanium alloy substrate. The thickness of the metallic glass layer is 50 nm-200 nm, in which in comparison with the titanium alloy substrate, the fatigue life of the composite material of the invention is increased by 5-17 times.
摘要翻译：本发明提供一种复合材料，其包括钛合金基底和金属玻璃层。金属玻璃层设置在钛合金基板上。金属玻璃层的厚度为50nm〜200nm，与钛合金基板相比，本发明复合材料的疲劳寿命提高5-17倍。

8. 发明申请

US20120177945A1 Whisker-Free Coating Structure and Method for Fabricating the Same 审中-公开
标题翻译：无晶须涂层结构及其制造方法
公开(公告)号：US20120177945A1
公开(公告)日：2012-07-12
申请号：US13415842
申请日：2012-03-09
申请人： Yee-Wen Yen , Jinn P. Chu , Chon-Hsin Lin , Chun-Lei Hsu , Chao-Kang Li
发明人： Yee-Wen Yen , Jinn P. Chu , Chon-Hsin Lin , Chun-Lei Hsu , Chao-Kang Li
IPC分类号： B32B15/00 , C23C28/02 , B32B15/01 , C23C14/35 , B82Y30/00 , B82Y40/00
CPC分类号： C23C14/165 , C23C14/584 , C23C28/021 , C23C28/023 , C25D3/30 , C25D3/60 , C25D5/505 , Y10T428/12674 , Y10T428/12708
摘要： The present invention relates to a whisker-free coating structure and a method for fabricating the same. The whisker-free coating structure comprises a substrate, a tungsten doped copper layer and a lead-free tin layer, wherein the tungsten doped copper layer and the lead-free tin layer are formed on the substrate in turns; So that, the whisker growth in the lead-free tin layers can be effectively suppressed by this whisker-free coating structure.
摘要翻译：本发明涉及无晶须涂层结构及其制造方法。不含晶须的涂层结构包括基底，掺杂钨的铜层和无铅锡层，其中钨基掺杂铜层和无铅锡层依次形成在基底上; 因此，无须锡的涂层结构可以有效地抑制无铅锡层中的晶须生长。

9. 发明申请

US20080099175A1 Method for in-gas micro/nanoimprinting of bulk metallic glass 审中-公开
标题翻译：散装金属玻璃的气体微/纳米压印方法
公开(公告)号：US20080099175A1
公开(公告)日：2008-05-01
申请号：US11790860
申请日：2007-04-27
申请人： Jinn P. Chu , Hadi Wijaya , Chun-Ling Chiang , Chih-Wei Wu
发明人： Jinn P. Chu , Hadi Wijaya , Chun-Ling Chiang , Chih-Wei Wu
IPC分类号： B22D25/02
CPC分类号： B22D17/2245 , B22D21/00 , C22C45/00
摘要： A method for in-gas micro/nanoimprinting of bulk metallic glass includes steps of preparing a die, heating the bulk metallic glass and in-gas micro/nanoimprinting of the bulk metallic glass. In the step of preparing a die, the die has a micro/nano structure having multiple depressions and a flow channel connected to the depressions. In the step of heating the bulk metallic glass, the bulk metallic glass is heated to a temperature between a glass transition temperature and a crystallization temperature of the bulk metallic glass. In the step of in-gas micro/nanoimprinting, the bulk metallic glass is forced into the die in presence of gas to imprint a complementing micro/nano structure on the bulk metallic glass. Because the die has a flow channel to allow air or gas to escape from the micro/nano structure of the die, the micro/nanoimprinting can be performed in presence of air or gas.
摘要翻译：本体金属玻璃的气体微/纳米压印的方法包括制备模具，加热块体金属玻璃和散装金属玻璃的气体微/纳米压印的步骤。在制备模具的步骤中，模头具有具有多个凹陷的微/纳米结构和与凹陷相连的流动通道。在加热块状金属玻璃的步骤中，将块状金属玻璃加热至玻璃化转变温度和块状金属玻璃的结晶温度之间的温度。在气体微/纳米压印的步骤中，在存在气体的情况下将大块金属玻璃强制进入模具，以在体金属玻璃上印刷互补的微/纳米结构。因为模具具有允许空气或气体从模具的微/纳米结构逸出的流动通道，所以微/纳米压印可以在存在空气或气体的情况下进行。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式