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1. 发明申请

US20150021639A1 LIGHT EMITTING DIODE STRUCTURE 有权
标题翻译：发光二极管结构
公开(公告)号：US20150021639A1
公开(公告)日：2015-01-22
申请号：US14019553
申请日：2013-09-06
申请人： Yi-Ru Huang , Yu-Yun Lo , Chih-Ling Wu , Jing-En Huang , Shao-Ying Ting
发明人： Yi-Ru Huang , Yu-Yun Lo , Chih-Ling Wu , Jing-En Huang , Shao-Ying Ting
IPC分类号： H01L33/40
CPC分类号： H01L33/405 , H01L33/42
摘要： A light emitting diode structure including a substrate, a semiconductor epitaxial layer and a reflective conductive structure layer is provided. The semiconductor epitaxial layer is disposed on the substrate and exposes a portion of the substrate. The reflective conductive structure layer covers a part of the semiconductor epitaxial layer and the portion of the substrate exposed by the semiconductor epitaxial layer.
摘要翻译：提供了包括衬底，半导体外延层和反射导电结构层的发光二极管结构。半导体外延层设置在衬底上并暴露衬底的一部分。反射导电结构层覆盖半导体外延层的一部分和由半导体外延层曝光的基板的部分。

2. 发明申请

US20140159082A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20140159082A1
公开(公告)日：2014-06-12
申请号：US13917646
申请日：2013-06-14
申请人： Yi-Ru Huang , Jing-En Huang , Chih-Ling Wu , Yu-Yun Lo
发明人： Yi-Ru Huang , Jing-En Huang , Chih-Ling Wu , Yu-Yun Lo
IPC分类号： H01L33/22
CPC分类号： H01L33/22
摘要： A light-emitting device including a substrate, a photoelectric structure and a coarse structure is provided. The substrate has an upper surface and a lower surface opposite to each other, and an annular side surface connecting the upper surface and the lower surface. The photoelectric structure is disposed on the upper surface of the substrate. The coarse structure is formed on the annular side surface of the substrate. A ratio of a thickness of the substrate and a thickness of the coarse structure is greater than or equal to 1 and less than or equal to 20. Therefore, the overall light-emitting efficiency of the light-emitting device may be improved.
摘要翻译：提供了包括基板，光电结构和粗糙结构的发光器件。基板具有彼此相对的上表面和下表面，以及连接上表面和下表面的环形侧表面。光电结构设置在基板的上表面上。粗糙结构形成在基板的环形侧表面上。基板的厚度和粗糙结构的厚度的比例大于或等于1且小于或等于20.因此，可以提高发光器件的整体发光效率。

3. 发明授权

US09871169B2 Light emitting diode structure 有权
公开(公告)号：US09871169B2
公开(公告)日：2018-01-16
申请号：US14019553
申请日：2013-09-06
申请人： Yi-Ru Huang , Yu-Yun Lo , Chih-Ling Wu , Jing-En Huang , Shao-Ying Ting
发明人： Yi-Ru Huang , Yu-Yun Lo , Chih-Ling Wu , Jing-En Huang , Shao-Ying Ting
IPC分类号： H01L33/40 , H01L33/42
CPC分类号： H01L33/405 , H01L33/42
摘要： A light emitting diode structure including a substrate, a semiconductor epitaxial layer and a reflective conductive structure layer is provided. The semiconductor epitaxial layer is disposed on the substrate and exposes a portion of the substrate. The reflective conductive structure layer covers a part of the semiconductor epitaxial layer and the portion of the substrate exposed by the semiconductor epitaxial layer.

4. 发明授权

US08872202B2 Light-emitting device capable of improving the light-emitting efficiency 有权
标题翻译：能够提高发光效率的发光装置
公开(公告)号：US08872202B2
公开(公告)日：2014-10-28
申请号：US13917646
申请日：2013-06-14
申请人： Yi-Ru Huang , Jing-En Huang , Chih-Ling Wu , Yu-Yun Lo
发明人： Yi-Ru Huang , Jing-En Huang , Chih-Ling Wu , Yu-Yun Lo
IPC分类号： H01L33/22
CPC分类号： H01L33/22
摘要： A light-emitting device including a substrate, a light emitting structure and a coarse structure is provided. The substrate has an upper surface and a lower surface opposite to each other, and an annular side surface connecting the upper surface and the lower surface. The light emitting structure is disposed on the upper surface of the substrate. The coarse structure is formed on the annular side surface of the substrate. A ratio of a thickness of the substrate and a thickness of the coarse structure is greater than or equal to 1 and less than or equal to 20. Therefore, the overall light-emitting efficiency of the light-emitting device may be improved.
摘要翻译：提供了包括基板，发光结构和粗糙结构的发光器件。基板具有彼此相对的上表面和下表面，以及连接上表面和下表面的环形侧表面。发光结构设置在基板的上表面上。粗糙结构形成在基板的环形侧表面上。基板的厚度和粗糙结构的厚度的比例大于或等于1且小于或等于20.因此，可以提高发光器件的整体发光效率。

5. 发明申请

US20140167080A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20140167080A1
公开(公告)日：2014-06-19
申请号：US13831965
申请日：2013-03-15
申请人： Jing-En Huang , Yi-Ru Huang , Chih-Ling Wu , Yu-Yun Lo
发明人： Jing-En Huang , Yi-Ru Huang , Chih-Ling Wu , Yu-Yun Lo
IPC分类号： H01L27/15
CPC分类号： H01L27/153 , H01L33/10 , H01L33/20 , H01L33/36 , H01L33/40 , H01L33/405 , H01L33/44 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device includes a substrate, light emitting units, an insulation layer, a current distribution layer and a reflective layer. The substrate has an upper surface. The light emitting units are disposed on the upper surface and include at least one first light emitting diode (LED) and at least one second LED. A first side wall of the first LED is adjacent to a second side wall of the second LED so as to define a concave portion exposing a portion of the upper surface. The insulation layer at least covers the first side wall and the second side wall. The current distribution layer covers the concave portion and at least covers a portion of the second LED. The reflective layer covers the current distribution layer and is electrically connected to the first LED and the second LED.
摘要翻译：发光器件包括衬底，发光单元，绝缘层，电流分布层和反射层。基板具有上表面。发光单元设置在上表面上并且包括至少一个第一发光二极管（LED）和至少一个第二LED。第一LED的第一侧壁与第二LED的第二侧壁相邻，以限定暴露上表面的一部分的凹部。绝缘层至少覆盖第一侧壁和第二侧壁。电流分布层覆盖凹部，并且至少覆盖第二LED的一部分。反射层覆盖电流分布层并电连接到第一LED和第二LED。

6. 发明授权

US08916889B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08916889B2
公开(公告)日：2014-12-23
申请号：US13831965
申请日：2013-03-15
申请人： Jing-En Huang , Yi-Ru Huang , Chih-Ling Wu , Yu-Yun Lo
发明人： Jing-En Huang , Yi-Ru Huang , Chih-Ling Wu , Yu-Yun Lo
IPC分类号： H01L27/15 , H01L33/36 , H01L33/10 , H01L33/40 , H01L33/44 , H01L33/46 , H01L33/20 , H01L33/62
CPC分类号： H01L27/153 , H01L33/10 , H01L33/20 , H01L33/36 , H01L33/40 , H01L33/405 , H01L33/44 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device includes a substrate, light emitting units, an insulation layer, a current distribution layer and a reflective layer. The substrate has an upper surface. The light emitting units are disposed on the upper surface and include at least one first light emitting diode (LED) and at least one second LED. A first side wall of the first LED is adjacent to a second side wall of the second LED so as to define a concave portion exposing a portion of the upper surface. The insulation layer at least covers the first side wall and the second side wall. The current distribution layer covers the concave portion and at least covers a portion of the second LED. The reflective layer covers the current distribution layer and is electrically connected to the first LED and the second LED.
摘要翻译：发光器件包括衬底，发光单元，绝缘层，电流分布层和反射层。基板具有上表面。发光单元设置在上表面上并且包括至少一个第一发光二极管（LED）和至少一个第二LED。第一LED的第一侧壁与第二LED的第二侧壁相邻，以限定暴露上表面的一部分的凹部。绝缘层至少覆盖第一侧壁和第二侧壁。电流分布层覆盖凹部，并且至少覆盖第二LED的一部分。反射层覆盖电流分布层并电连接到第一LED和第二LED。

7. 发明授权

US08674396B1 Electrode pad structure of light emitting device 有权
标题翻译：发光装置的电极垫结构
公开(公告)号：US08674396B1
公开(公告)日：2014-03-18
申请号：US13831864
申请日：2013-03-15
申请人： Chih-Ling Wu , Jing-En Huang , Yi-Ru Huang , Yu-Yun Lo
发明人： Chih-Ling Wu , Jing-En Huang , Yi-Ru Huang , Yu-Yun Lo
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/44
摘要： An electrode pad structure of a light emitting device includes an insulation layer, a first type electrode pad and at least one second type electrode pad. The light emitting device has a centerline and the light emitting device is divided into two equal blocks via the centerline. The first type electrode pad is disposed on the insulation layer and symmetrical to the centerline. The second type electrode pad is disposed on the insulation layer and symmetrical to the centerline. The first type electrode pad is coplanar with the second type electrode pad, and a portion of the insulation layer is exposed between the first type electrode pad and the second type electrode pad.
摘要翻译：发光器件的电极焊盘结构包括绝缘层，第一类型电极焊盘和至少一个第二类型电极焊盘。发光器件具有中心线，并且发光器件经由中心线被分成两个相等的块。第一类电极焊盘设置在绝缘层上并与中心线对称。第二类电极焊盘设置在绝缘层上并与中心线对称。第一类型电极焊盘与第二类型电极焊盘共面，并且绝缘层的一部分暴露在第一型电极焊盘和第二型电极焊盘之间。

8. 发明授权

US08829543B2 Semiconductor light emitting device and flip chip package device 有权
标题翻译：半导体发光器件和倒装芯片封装器件
公开(公告)号：US08829543B2
公开(公告)日：2014-09-09
申请号：US13787765
申请日：2013-03-06
申请人： Yun-Li Li , Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo
发明人： Yun-Li Li , Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo
IPC分类号： H01L33/00 , H01L33/10 , H01L33/60 , H01L33/06 , H01L33/40 , H01L33/08 , H01L33/20
CPC分类号： H01L33/60 , H01L33/06 , H01L33/20 , H01L33/405
摘要： A semiconductor light emitting device including a first type doped semiconductor layer, a light emitting layer, a second type doped semiconductor layer, and a reflection layer is provided. The first type doped semiconductor layer has a mesa portion and a depression portion. The light emitting layer is disposed on the mesa portion and has a first surface, a second surface and a first side surface connecting the first surface with the second surface. The second type doped semiconductor layer is disposed on the light emitting layer and has a third surface, a fourth surface and a second side surface connecting the third surface with the fourth surface. Observing from a viewing direction parallel to the light emitting layer, the reflection layer covers at least part of the first side surface and at least part of the second side surface. A flip chip package device is also provided.
摘要翻译：提供了包括第一类型掺杂半导体层，发光层，第二类型掺杂半导体层和反射层的半导体发光器件。第一类掺杂半导体层具有台面部分和凹陷部分。发光层设置在台面部分上，具有将第一表面与第二表面连接的第一表面，第二表面和第一侧表面。第二种掺杂半导体层设置在发光层上，并具有连接第三表面和第四表面的第三表面，第四表面和第二侧表面。从平行于发光层的观察方向观察，反射层覆盖第一侧面的至少一部分和第二侧面的至少一部分。还提供了一种倒装芯片封装器件。

9. 发明申请

US20130277641A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND FLIP CHIP PACKAGE DEVICE 有权
标题翻译：半导体发光器件和片式芯片封装器件
公开(公告)号：US20130277641A1
公开(公告)日：2013-10-24
申请号：US13787765
申请日：2013-03-06
申请人： Yun-Li Li , Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo
发明人： Yun-Li Li , Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo
IPC分类号： H01L33/60 , H01L33/06
CPC分类号： H01L33/60 , H01L33/06 , H01L33/20 , H01L33/405
摘要： A semiconductor light emitting device including a first type doped semiconductor layer, a light emitting layer, a second type doped semiconductor layer, and a reflection layer is provided. The first type doped semiconductor layer has a mesa portion and a depression portion. The light emitting layer is disposed on the mesa portion and has a first surface, a second surface and a first side surface connecting the first surface with the second surface. The second type doped semiconductor layer is disposed on the light emitting layer and has a third surface, a fourth surface and a second side surface connecting the third surface with the fourth surface. Observing from a viewing direction parallel to the light emitting layer, the reflection layer covers at least part of the first side surface and at least part of the second side surface. A flip chip package device is also provided.
摘要翻译：提供了包括第一类型掺杂半导体层，发光层，第二类型掺杂半导体层和反射层的半导体发光器件。第一类掺杂半导体层具有台面部分和凹陷部分。发光层设置在台面部分上，具有将第一表面与第二表面连接的第一表面，第二表面和第一侧表面。第二种掺杂半导体层设置在发光层上，并具有连接第三表面和第四表面的第三表面，第四表面和第二侧表面。从平行于发光层的观察方向观察，反射层覆盖第一侧面的至少一部分和第二侧面的至少一部分。还提供了一种倒装芯片封装器件。

10. 发明授权

US6033772A CoCrNiTa/Cr magnetic recording medium 失效
标题翻译： CoCrNiTa / Cr磁记录介质
公开(公告)号：US6033772A
公开(公告)日：2000-03-07
申请号：US964523
申请日：1997-11-05
申请人： Yu-Yun Lo , Tai-hwang Lai , James Liang , Hung-huei Liang
发明人： Yu-Yun Lo , Tai-hwang Lai , James Liang , Hung-huei Liang
IPC分类号： G11B5/64 , G11B5/66
CPC分类号： G11B5/656 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： A magnetic recording medium for use in making high-density computer hard disks. It contains: (a) an aluminum or Ni/P substrate; (b) a chromium underlayer on the substrate; (c) a four-component magnetic recording layer on the underlayer; and (d) a carbon protective layer on the magnetic recording layer. The magnetic recording layer comprises 66-78 atom percent of cobalt, 12-16 atom percent of chromium, 6-10 atom percent of nickel, and 4-8 atom percent of tantalum. The CoCrTiTa four-component exhibits a high coercivity (greater than 2,800 Oe), which results in many improved qualities, including increased recording density, reduced noise, improved off-track capability (OTC), and reduced on-track error rate (OTER). It also also allows the sputtering process to be conducted at a substantially lowered temperature.
摘要翻译：用于制造高密度计算机硬盘的磁记录介质。它包含：（a）铝或Ni / P基材; （b）基底上的铬底层; （c）底层上的四组分磁记录层; 和（d）磁记录层上的碳保护层。磁记录层包括66-78原子％的钴，12-16原子％的铬，6-10原子％的镍和4-8原子％的钽。 CoCrTiTa四组分显示出高矫顽力（大于2,800 Oe），这导致许多改进的质量，包括增加记录密度，降低的噪声，改进的离轨能力（OTC）和降低的轨道误差率（OTER）。它还允许溅射工艺在基本上降低的温度下进行。

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