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    • 5. 发明授权
    • Semiconductor memory device having hierarchical bit line structure and method of driving the semiconductor memory device
    • 具有分级位线结构的半导体存储器件和驱动半导体存储器件的方法
    • US08331162B2
    • 2012-12-11
    • US12662222
    • 2010-04-06
    • Jin-young KimKi-whan Song
    • Jin-young KimKi-whan Song
    • G11C7/10
    • G11C7/18G11C7/12G11C11/4094G11C11/4097
    • The semiconductor memory device includes a first memory cell array including at least one first memory cell and at least one second memory cell corresponding to the at least one first memory cell, a first low bit line connected to the at least one first memory cell, a first low complementary bit line connected to the at least one second memory cell, a first switch unit having a first terminal connected to the first low bit line, a second switch unit having a first terminal connected to the first low complementary bit line, a first global bit line connected to a second terminal of the first switch unit, a first global complementary bit line connected to a second terminal of the second switch unit, and a plurality of sensing amplifying units connected to the first global bit line and the first global complementary bit line.
    • 半导体存储器件包括第一存储器单元阵列,其包括至少一个第一存储单元和与该至少一个第一存储单元对应的至少一个第二存储单元,连接至该至少一个第一存储单元的第一低位线, 连接到所述至少一个第二存储器单元的第一低互补位线,具有连接到所述第一低位线的第一端子的第一开关单元,具有连接到所述第一低互补位线的第一端子的第二开关单元, 连接到第一开关单元的第二端子的全局位线,连接到第二开关单元的第二端子的第一全局互补位线以及连接到第一全局位线和第一全局互补位置的多个感测放大单元 位线。
    • 6. 发明申请
    • Methods of Forming Integrated Circuit Devices Using Contact Hole Spacers to Improve Contact Isolation
    • 使用接触孔隔离器形成集成电路器件以改善接触隔离的方法
    • US20110104889A1
    • 2011-05-05
    • US12965091
    • 2010-12-10
    • Doo-young LeeSang-sup JeongSung-gil CholJong-chul ParkJin-young KimKi-jin Park
    • Doo-young LeeSang-sup JeongSung-gil CholJong-chul ParkJin-young KimKi-jin Park
    • H01L21/768
    • H01L21/76897H01L21/76831
    • Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.
    • 形成集成电路器件的方法包括接触孔中的上部侧壁间隔物,以在保持相对低的接触电阻的同时对接触插塞提供增强的电隔离。 这些方法包括在半导体衬底上形成层间绝缘层。 层间绝缘层至少包括半导体衬底上的第一材料的第一电绝缘层和第一电绝缘层上的第二材料的第二电绝缘层。 形成延伸穿过层间绝缘层并暴露半导体衬底的主表面的接触孔。 可以通过相对于第二材料依次选择性地蚀刻第二电绝缘层和第一电绝缘层来形成第一材料的蚀刻速率。 以比第二材料更快的速率顺次蚀刻第一材料可能产生具有凹陷侧壁的接触孔。
    • 7. 发明授权
    • Methods of forming integrated circuit devices using contact hole spacers to improve contact isolation
    • 使用接触孔间隔物形成集成电路器件以改善接触隔离的方法
    • US07875551B2
    • 2011-01-25
    • US12575682
    • 2009-10-08
    • Doo-young LeeSang-sup JeongSung-gil ChoiJong-chul ParkJin-young KimKi-jin Park
    • Doo-young LeeSang-sup JeongSung-gil ChoiJong-chul ParkJin-young KimKi-jin Park
    • H01L23/58
    • H01L21/76897H01L21/76831
    • Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.
    • 形成集成电路器件的方法包括接触孔中的上部侧壁间隔物,以在保持相对低的接触电阻的同时对接触插塞提供增强的电隔离。 这些方法包括在半导体衬底上形成层间绝缘层。 层间绝缘层至少包括半导体衬底上的第一材料的第一电绝缘层和第一电绝缘层上的第二材料的第二电绝缘层。 形成延伸穿过层间绝缘层并暴露半导体衬底的主表面的接触孔。 该接触孔可以通过相对于第二材料依次选择性地蚀刻第二电绝缘层和第一电绝缘层而形成,并以较快的第一材料的蚀刻速率。 以比第二材料更快的速率顺次蚀刻第一材料可能产生具有凹陷侧壁的接触孔。
    • 8. 发明授权
    • Mold clamping unit
    • 模具夹紧单元
    • US07402037B2
    • 2008-07-22
    • US11512373
    • 2006-08-30
    • Sung-wook JungSung-chul ShinYoung-ju KangByeong-geun JangJin-young Kim
    • Sung-wook JungSung-chul ShinYoung-ju KangByeong-geun JangJin-young Kim
    • B29C45/64
    • B29C45/68
    • The mold clamping unit comprises a column mounted in a transfer means and moving in forward and backward direction; a mold clamping piston in which clamping operation and clamping-releasing operation are performed; plurality of column teeth disposed on a surface of the column along an axial direction of the column; center bore provided in a central of the mold clamping piston; clamping tooth seating groove with a plurality of clamping teeth inside the mold clamping piston contacting the center bore; rotating plate with plurality of clamping tooth guide grooves separated from the clamping teeth in the axial direction of the column; and a teeth rod positioned in each of the clamping tooth guide groove, wherein each teeth rod is connected to each clamping teeth during the rotation of the rotating plate, for moving each clamping tooth in a central or radial direction of the rotating plate and clamping of the clamping tooth and the column can proceed.
    • 模具夹紧单元包括安装在传送装置中并沿前后方向移动的柱体; 夹持操作和夹紧释放操作的模具夹紧活塞; 沿列的轴向设置在柱的表面上的多个列齿; 中心孔设置在模具夹紧活塞的中心; 夹紧齿座槽与模具夹紧活塞内的多个夹紧齿接触中心孔; 旋转板,其具有沿着柱的轴向与夹持齿分离的多个夹紧齿导向槽; 以及定位在每个夹紧齿导向槽中的齿杆,其中每个齿杆在旋转板的旋转期间连接到每个夹紧齿,用于沿旋转板的中心或径向方向移动每个夹紧齿,并夹紧 夹紧齿和柱可以进行。