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1. 发明授权

US06398430B1 Semiconductor device fabrication system 失效
标题翻译：半导体器件制造系统
公开(公告)号：US06398430B1
公开(公告)日：2002-06-04
申请号：US09634999
申请日：2000-08-08
申请人： Gyu-chan Jeoung , Kwang-seok Choi , Jin-hang Jung , Young-sun Kim , Hong Lee , Hoe-sik Chung , Sung-ho Lee , Hun-hwan Ha
发明人： Gyu-chan Jeoung , Kwang-seok Choi , Jin-hang Jung , Young-sun Kim , Hong Lee , Hoe-sik Chung , Sung-ho Lee , Hun-hwan Ha
IPC分类号： G03D500
CPC分类号： G03F7/40 , G03F7/2024 , H01L21/308
摘要： A semiconductor device fabrication system for carrying out a UV-bake on a photoresist pattern in the semiconductor device pattern formation, includes a photoresist coating unit coating a wafer with a specific photoresist; a developing unit forming a photoresist pattern on the wafer coated with the photoresist; and a cross-linking and flow baking unit for cross-linking the photoresist pattern and subsequently flow baking the cross-linked photoresist pattern, wherein the cross-linking and flow baking unit thermally stabilizes the photoresist pattern prior to flow baking.
摘要翻译：一种用于在半导体器件图案形成中在光致抗蚀剂图案上进行UV烘烤的半导体器件制造系统包括用特定光致抗蚀剂涂覆晶片的光致抗蚀剂涂覆单元; 在涂有光致抗蚀剂的晶片上形成光刻胶图案的显影单元; 以及交联和流动烘烤单元，用于交联光致抗蚀剂图案，随后流动烘烤交联的光致抗蚀剂图案，其中交联和流动烘焙单元在流动烘烤之前热稳定光致抗蚀剂图案。

2. 发明授权

US06358672B2 Method of forming semiconductor device pattern including cross-linking and flow baking a positive photoresist 有权
标题翻译：形成半导体器件图案的方法，包括交联和流动烘烤正性光致抗蚀剂
公开(公告)号：US06358672B2
公开(公告)日：2002-03-19
申请号：US09192000
申请日：1998-11-16
申请人： Gyu-chan Jeoung , Kwang-seok Choi , Jin-hang Jung , Young-sun Kim , Hong Lee , Hoe-sik Chung , Sung-ho Lee , Hun-hwan Ha
发明人： Gyu-chan Jeoung , Kwang-seok Choi , Jin-hang Jung , Young-sun Kim , Hong Lee , Hoe-sik Chung , Sung-ho Lee , Hun-hwan Ha
IPC分类号： G03C556
CPC分类号： G03F7/40 , G03F7/2024 , H01L21/308
摘要： There are provided a semiconductor device fabrication system for carrying out a UV-bake on a photoresist pattern in the semiconductor device pattern formation, a method of forming a semiconductor device pattern using the same, and a photoresist formed thereby. The semiconductor device fabrication system includes a photoresist coating unit coating a wafer with a specific photoresist; a developing unit forming a photoresist pattern on the wafer coated with the photoresist; and a cross-linking unit cross-linking the photoresist pattern to provide a stabilized flow during the flow process for the photoresist pattern. The method of forming a semiconductor device pattern includes: coating a wafer with a photoresist; aligning a photo mask on the photoresist, and carrying out an exposure; forming a photoresist pattern on the wafer; carrying out a cross-linking of the photoresist pattern; and carrying out a flow bake for the photoresist pattern after the cross-linking.
摘要翻译：提供了一种用于在半导体器件图案形成中在光致抗蚀剂图案上进行UV烘烤的半导体器件制造系统，使用其形成半导体器件图案的方法和由其形成的光致抗蚀剂。半导体器件制造系统包括用特定光致抗蚀剂涂覆晶片的光致抗蚀剂涂覆单元; 在涂有光致抗蚀剂的晶片上形成光刻胶图案的显影单元; 和交联单元交联光致抗蚀剂图案以在光致抗蚀剂图案的流程过程中提供稳定的流动。形成半导体器件图案的方法包括：用光致抗蚀剂涂覆晶片; 将光掩模对准光致抗蚀剂，并进行曝光; 在晶片上形成光致抗蚀剂图案; 进行光致抗蚀剂图案的交联; 并且在交联之后对光致抗蚀剂图案进行流动烘烤。

3. 发明授权

US06074944A Methods for priming wafers employed in integrated circuit devices using dihydropyrane 失效
标题翻译：用于使用二氢吡喃的集成电路器件中使用晶片的方法
公开(公告)号：US06074944A
公开(公告)日：2000-06-13
申请号：US2636
申请日：1998-01-05
申请人： Jin-hang Jung , Hoe-sik Chung
发明人： Jin-hang Jung , Hoe-sik Chung
IPC分类号： G03F7/11 , C07D309/18 , G03F7/16 , G03F7/38 , H01L21/027 , H01L21/306 , H01L21/312 , H01L21/44
CPC分类号： H01L21/312 , H01L21/02052
摘要： Methods of treating surfaces of wafers to be used in forming integrated circuit devices comprise applying dihydropyrane to the surfaces of the wafers wherein hydrophobicity is imparted to the surfaces. The applying steps are carried out prior to applying photoresists to the wafers.
摘要翻译：处理用于形成集成电路器件的晶片表面的方法包括将二氢吡喃施加到晶片的表面，其中赋予表面疏水性。施加步骤在将光刻胶施加到晶片之前进行。

4. 发明授权

US06838223B2 Compositions for anti-reflective light absorbing layer and method for forming patterns in semiconductor device using the same 失效
标题翻译：用于抗反射光吸收层的组合物和使用其形成半导体器件中的图案的方法
公开(公告)号：US06838223B2
公开(公告)日：2005-01-04
申请号：US10364406
申请日：2003-02-12
申请人： Sang-woong Yoon , Hoe-sik Chung , Jin-a Ryu , Young-ho Kim
发明人： Sang-woong Yoon , Hoe-sik Chung , Jin-a Ryu , Young-ho Kim
IPC分类号： G03F7/11 , G03F7/004 , G03F7/023 , G03F7/038 , G03F7/09 , G03F7/095 , H01L21/027 , G03F7/30
CPC分类号： G03F7/091 , G03F7/0382 , G03F7/095
摘要： A composition for an anti-reflective layer capable of simultaneously being developed together with a photoresist layer after exposure of the photoresist layer in a photolithography process and a method for forming patterns in a semiconductor device using the composition, wherein the anti-reflective light absorbing layer composition includes a polymer having a (meth)acrylate repeating unit, a light-absorbing group of diazoquinones chemically bound to the (meth)acrylate repeating unit, a photoacid generator, a cross-linker which thermally cross-links the polymer and is decomposed from the polymer by an acid, and a catalyst for the cross-linking reaction of the polymer. The method for forming patterns in a semiconductor device involves forming an anti-reflective layer on a semiconductor substrate using the composition and simultaneously exposing the anti-reflective layer and a photoresist layer, thereby chemically transforming the anti-reflective layer so it is able to be developed. The anti-reflective layer and the photoresist layer are simultaneously developed.
摘要翻译：一种用于在光刻工艺中曝光光致抗蚀剂层之后能够与光致抗蚀剂层一起显影的抗反射层的组合物，以及使用该组合物在半导体器件中形成图案的方法，其中抗反射光吸收层组合物包括具有（甲基）丙烯酸酯重复单元的聚合物，与（甲基）丙烯酸酯重复单元化学键合的重氮醌的光吸收基团，光酸产生剂，热交联聚合物并从聚合物中分解的交联剂所述聚合物由酸和所述聚合物的交联反应的催化剂组成。在半导体器件中形成图案的方法包括使用该组合物在半导体衬底上形成抗反射层，同时使抗反射层和光致抗蚀剂层暴露，从而使抗反射层化学转化，使其能够发达。同时显影抗反射层和光致抗蚀剂层。

5. 发明授权

US5848315A Development monitoring apparatus and method adopting the same 失效
标题翻译：开发监测装置及采用该方法的方法
公开(公告)号：US5848315A
公开(公告)日：1998-12-08
申请号：US747512
申请日：1996-11-12
申请人： Yeong-seon Kim , Min-gyu Ko , Hoe-sik Chung , Hong Lee
发明人： Yeong-seon Kim , Min-gyu Ko , Hoe-sik Chung , Hong Lee
IPC分类号： H01L21/027 , G03D13/00 , G03F1/00 , G03F7/20 , G03F7/30
CPC分类号： G03F7/3028 , G03D13/007 , G03F7/70675
摘要： A development monitoring apparatus in which a non-exposed wafer is easily reworked by monitoring a developed portion and an undeveloped portion of a photoresist film on a wafer. The apparatus includes a light source for outputting incident light to a wafer having a photoresist film coated with a developer, and a light collector for collecting reflected light reflecting from the wafer. A filter transmits only the reflected light having a desired wavelength. A photoelectric device transforms the reflected light which passes through the filter into an electrical signal. Correct development of the photoresist film is determined by measuring the intensity change of the electrical signal over time. Accordingly, an exposed wafer and an non-exposed wafer are rapidly reworked, so that an increase in manufacturing costs and deterioration of yield rate can be prevented.
摘要翻译：一种显影监测装置，其中通过监测晶片上的光致抗蚀剂膜的显影部分和未显影部分，容易地对未曝光的晶片进行再加工。该装置包括用于将入射光输出到具有涂覆有显影剂的光致抗蚀剂膜的晶片的光源和用于收集从晶片反射的反射光的光收集器。滤光器仅透射具有期望波长的反射光。光电器件将通过滤光器的反射光转换为电信号。通过测量电信号随时间的强度变化来确定光致抗蚀剂膜的正确显影。因此，暴露的晶片和未曝光的晶片被快速地重新加工，从而可以防止制造成本的增加和成品率的劣化。

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