专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07985646B2 Method of fabricating nanowire memory device and system of controlling nanowire formation used in the same 有权
标题翻译：制造纳米线存储器件的方法及其中使用的纳米线形成控制系统
公开(公告)号：US07985646B2
公开(公告)日：2011-07-26
申请号：US11712990
申请日：2007-03-02
申请人： Jin-gyoo Yoo , Cheol-soon Kim , Jung-hoon Lee
发明人： Jin-gyoo Yoo , Cheol-soon Kim , Jung-hoon Lee
IPC分类号： G11C11/50
CPC分类号： H01L27/10 , B82Y10/00
摘要： A method of fabricating a nanowire memory device, and a system of controlling nanowire formation used in the same method are provided. In the method of fabricating a nanowire memory device which includes a substrate; an electrode formed on the substrate and insulated from the substrate; and a nanowire having its one end connected with the electrode and formed at a given length, the method comprises: forming an electrode and a dummy electrode to be paired with the electrode on the substrate; forming the nanowire between the electrode and the dummy electrode while measuring a current flowing between the electrode and the dummy electrode, and cutting power applied between the electrode and the dummy electrode when the current measured is a given value; and removing the dummy electrode.
摘要翻译：提供了制造纳米线存储器件的方法，以及以相同方法使用的控制纳米线形成的系统。在制造包括衬底的纳米线存储器件的方法中; 形成在基板上并与基板绝缘的电极; 和一个纳米线，其一端与电极连接并以给定的长度形成，该方法包括：在基片上形成与电极配对的电极和虚拟电极; 在测量电极和虚拟电极之间的电流的同时，在电极和虚拟电极之间形成纳米线，并且当所测量的电流为给定值时，切割施加在电极和虚拟电极之间的功率; 并去除虚拟电极。

2. 发明授权

US08184473B2 Nanowire memory device and method of manufacturing the same 有权
公开(公告)号：US08184473B2
公开(公告)日：2012-05-22
申请号：US12872835
申请日：2010-08-31
申请人： Jin-gyoo Yoo , Cheol-soon Kim , Jung-hoon Lee
发明人： Jin-gyoo Yoo , Cheol-soon Kim , Jung-hoon Lee
IPC分类号： G11C11/50
CPC分类号： G11C13/025 , B82Y10/00 , G11C2213/16 , H01L51/0048 , Y10S977/943
摘要： A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.

3. 发明授权

US08293654B2 Nanowire memory device and method of manufacturing the same 有权
标题翻译：纳米线记忆装置及其制造方法
公开(公告)号：US08293654B2
公开(公告)日：2012-10-23
申请号：US13425807
申请日：2012-03-21
申请人： Jin-gyoo Yoo , Cheol-soon Kim , Jung-hoon Lee
发明人： Jin-gyoo Yoo , Cheol-soon Kim , Jung-hoon Lee
IPC分类号： H01L21/308
CPC分类号： G11C13/025 , B82Y10/00 , G11C2213/16 , H01L51/0048 , Y10S977/943
摘要： A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.
摘要翻译：提供了一种纳米线存储器件及其制造方法。存储器件包括：衬底; 形成在所述基板上的第一电极; 从所述第一电极的端部延伸的第一纳米线; 形成在所述第一电极上以与所述第一电极重叠的第二电极; 以及从与第一电极的端部对应的第二电极的端部沿与第一纳米线相同的方向延伸的第二纳米线，其中在第一和第二电极之间存在绝缘层。

4. 发明申请

US20100320564A1 NANOWIRE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：纳米存储器件及其制造方法
公开(公告)号：US20100320564A1
公开(公告)日：2010-12-23
申请号：US12872835
申请日：2010-08-31
申请人： Jin-gyoo Yoo , Cheol-soon Kim , Jung-hoon Lee
发明人： Jin-gyoo Yoo , Cheol-soon Kim , Jung-hoon Lee
IPC分类号： H01L29/86 , H01L21/02
CPC分类号： G11C13/025 , B82Y10/00 , G11C2213/16 , H01L51/0048 , Y10S977/943
摘要： A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.
摘要翻译：提供了一种纳米线存储器件及其制造方法。存储器件包括：衬底; 形成在所述基板上的第一电极; 从所述第一电极的端部延伸的第一纳米线; 形成在所述第一电极上以与所述第一电极重叠的第二电极; 以及从与第一电极的端部对应的第二电极的端部沿与第一纳米线相同的方向延伸的第二纳米线，其中在第一和第二电极之间存在绝缘层。

5. 发明授权

US07821813B2 Nanowire memory device and method of manufacturing the same 有权
标题翻译：纳米线记忆装置及其制造方法
公开(公告)号：US07821813B2
公开(公告)日：2010-10-26
申请号：US11714826
申请日：2007-03-07
申请人： Jin-gyoo Yoo , Cheol-soon Kim , Jung-hoon Lee
发明人： Jin-gyoo Yoo , Cheol-soon Kim , Jung-hoon Lee
IPC分类号： G11C11/50
CPC分类号： G11C13/025 , B82Y10/00 , G11C2213/16 , H01L51/0048 , Y10S977/943
摘要： A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.
摘要翻译：提供了一种纳米线存储器件及其制造方法。存储器件包括：衬底; 形成在所述基板上的第一电极; 从所述第一电极的端部延伸的第一纳米线; 形成在所述第一电极上以与所述第一电极重叠的第二电极; 以及从与第一电极的端部对应的第二电极的端部沿与第一纳米线相同的方向延伸的第二纳米线，其中在第一和第二电极之间存在绝缘层。

6. 发明申请

US20070268739A1 Nanowire memory device and method of manufacturing the same 有权
标题翻译：纳米线记忆装置及其制造方法
公开(公告)号：US20070268739A1
公开(公告)日：2007-11-22
申请号：US11714826
申请日：2007-03-07
申请人： Jin-gyoo Yoo , Cheol-soon Kim , Jung-hoon Lee
发明人： Jin-gyoo Yoo , Cheol-soon Kim , Jung-hoon Lee
IPC分类号： G11C11/21 , B05D5/12
CPC分类号： G11C13/025 , B82Y10/00 , G11C2213/16 , H01L51/0048 , Y10S977/943
摘要： A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.
摘要翻译：提供了一种纳米线存储器件及其制造方法。存储器件包括：衬底; 形成在所述基板上的第一电极; 从所述第一电极的端部延伸的第一纳米线; 形成在所述第一电极上以与所述第一电极重叠的第二电极; 以及从与第一电极的端部对应的第二电极的端部沿与第一纳米线相同的方向延伸的第二纳米线，其中在第一和第二电极之间存在绝缘层。

7. 发明申请

US20070231988A1 Method of fabricating nanowire memory device and system of controlling nanowire formation used in the same 有权
标题翻译：制造纳米线存储器件的方法及其中使用的纳米线形成控制系统
公开(公告)号：US20070231988A1
公开(公告)日：2007-10-04
申请号：US11712990
申请日：2007-03-02
申请人： Jin-gyoo Yoo , Cheol-soon Kim , Jung-hoon Lee
发明人： Jin-gyoo Yoo , Cheol-soon Kim , Jung-hoon Lee
IPC分类号： H01L21/8238
CPC分类号： H01L27/10 , B82Y10/00
摘要： A method of fabricating a nanowire memory device, and a system of controlling nanowire formation used in the same method are provided. In the method of fabricating a nanowire memory device which includes a substrate; an electrode formed on the substrate and insulated from the substrate; and a nanowire having its one end connected with the electrode and formed at a given length, the method comprises: forming an electrode and a dummy electrode to be paired with the electrode on the substrate; forming the nanowire between the electrode and the dummy electrode while measuring a current flowing between the electrode and the dummy electrode, and cutting power applied between the electrode and the dummy electrode when the current measured is a given value; and removing the dummy electrode.
摘要翻译：提供了制造纳米线存储器件的方法，以及以相同方法使用的控制纳米线形成的系统。在制造包括衬底的纳米线存储器件的方法中; 形成在基板上并与基板绝缘的电极; 和一个纳米线，其一端与电极连接并以给定的长度形成，该方法包括：在基片上形成与电极配对的电极和虚拟电极; 在测量电极和虚拟电极之间的电流的同时，在电极和虚拟电极之间形成纳米线，并且当所测量的电流为给定值时，切割施加在电极和虚拟电极之间的功率; 并去除虚拟电极。

8. 发明授权

US07261352B2 Electrostatically driven carbon nanotube gripping device 有权
标题翻译：静电驱动碳纳米管夹持装置
公开(公告)号：US07261352B2
公开(公告)日：2007-08-28
申请号：US11142374
申请日：2005-06-02
申请人： Leonid Maslov , Jin-gyoo Yoo , Cheol-soon Kim
发明人： Leonid Maslov , Jin-gyoo Yoo , Cheol-soon Kim
IPC分类号： B25J7/00
CPC分类号： B25J7/00 , B81C99/002 , G01Q30/20 , G01Q70/12 , G01Q80/00 , Y10S977/849 , Y10S977/962
摘要： An apparatus is provided for gripping nano-scale objects, wherein the apparatus includes a probe including a base portion and a terminal portion. First and second nanotubes are secured to the base portion of the probe, wherein each of the first and second nanotubes include a protruding portion which extends past the base portion and the terminal portion of the probe. First and second electrodes are formed on the base portion of the probe and electrically connected to the first and second nanotubes. A third electrode is disposed on the terminal portion of the probe. A control circuit applies a voltage to the first, second and third electrodes to close the protruding portions of the first and second nanotubes by charging the first and second nanotubes to a first polarity and charging the third electrode to a second polarity opposite to the first polarity.
摘要翻译：提供一种用于夹持纳米尺度物体的装置，其中，该装置包括包括基部和端子部分的探针。第一和第二纳米管被固定到探针的基部，其中第一和第二纳米管中的每一个包括延伸穿过探针的基部和终端部分的突出部分。第一和第二电极形成在探针的基部上并电连接到第一和第二纳米管。第三电极设置在探针的端子部分上。控制电路通过将第一和第二纳米管充电到第一极性并将第三电极充电到与第一极性相反的第二极性，向第一和第二电极施加电压以封闭第一和第二纳米管的突出部分。

9. 发明申请

US20050276527A1 Spindle motor 审中-公开
标题翻译：主轴电机
公开(公告)号：US20050276527A1
公开(公告)日：2005-12-15
申请号：US11149366
申请日：2005-06-10
申请人： Jin-gyoo Yoo , Gun-hee Jang , Cheol-soon Kim
发明人： Jin-gyoo Yoo , Gun-hee Jang , Cheol-soon Kim
IPC分类号： G11B19/20 , F16C17/02 , F16C17/10 , F16C32/06 , F16C33/10 , F16C33/24 , H02K7/08
CPC分类号： F16C33/107 , F16C17/02 , F16C17/107 , F16C2300/34 , F16C2370/12
摘要： Provided is a spindle motor which includes a base, a sleeve fixed on the base and having a hollow portion, and a shaft rotatably installed in the hollow portion of the sleeve. In the spindle motor, a plurality of journal grooves are formed in an outer circumferential surface of the shaft to form a journal bearing which supports the shaft in a radial direction when the shaft rotates, and the journal grooves are arranged at an uneven interval.
摘要翻译：提供一种主轴电机，其包括基座，固定在基座上并具有中空部分的套筒和可旋转地安装在套筒的中空部分中的轴。在主轴电动机中，在轴的外周面形成有多个轴颈槽，以形成在轴旋转时沿径向支撑该轴的轴颈轴承，并且轴颈槽以不均匀的间隔配置。

10. 发明申请

US20070159726A1 Hard disk drive, suspension assembly of actuator of hard disk drive, and method of operation of hard disk drive 失效
标题翻译：硬盘驱动器，硬盘驱动器执行器的悬挂组件，硬盘驱动器的操作方法
公开(公告)号：US20070159726A1
公开(公告)日：2007-07-12
申请号：US11651541
申请日：2007-01-10
申请人： Leonid Maslov , Cheol-soon Kim , Jin-gyoo Yoo , Haeng-soo Lee
发明人： Leonid Maslov , Cheol-soon Kim , Jin-gyoo Yoo , Haeng-soo Lee
IPC分类号： G11B5/48
CPC分类号： G11B5/4826
摘要： A suspension assembly of an actuator of a hard disk drive prevents collisions with a data storage disk of the drive. The suspension assembly includes a load beam, a bracket having a rear end at which the bracket is coupled to the load beam and a flexure, a slider that is attached to the bracket and carries the read/write head of the hard disk drive, and a limiting mechanism capable of selectively attaching and detaching a respective portion of the bracket to and from the load beam during operation. The load beam has a dimple projecting toward the bracket and which normally contacts a first surface of the bracket. The slider is attached to a second surface of the bracket opposite the first surface. The limiting mechanism attaches a portion of the bracket bearing the slider to the load beam when the read/write head is unloaded from the disk. Therefore, the wobbling of the slider is suppressed during the unloading operation. On the other hand, the portion of the bracket bearing the slider is detached from the load beam during a read/write operation to allow the slider to pitch and roll more freely about the dimple.
摘要翻译：硬盘驱动器的执行器的悬架组件可防止与驱动器的数据存储盘的冲突。悬挂组件包括负载梁，具有后端的支架，支架联接到负载梁和挠曲件，附接到支架并承载硬盘驱动器的读/写头的滑块，以及限制机构能够在操作期间选择性地将支架的相应部分与负载梁相连和分离。负载梁具有朝向支架突出的凹坑，并且通常接触支架的第一表面。滑块附接到支架的与第一表面相对的第二表面。当读/写头从盘上卸载时，限制机构将支承滑块的支架的一部分连接到负载梁。因此，在卸载操作期间抑制滑块的摆动。另一方面，在读/写操作期间，承载滑块的支架的部分与负载梁分离，以允许滑块围绕凹坑更自由地俯仰和滚动。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式