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1. 发明申请

US20160197121A1 VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：可变电阻存储器件及其制造方法
公开(公告)号：US20160197121A1
公开(公告)日：2016-07-07
申请号：US14984477
申请日：2015-12-30
申请人： Jin-Woo LEE , Youn-Sean KANG , Seung-Jae JUNG , Hyun-Su JU , Masayuki TERAI
发明人： Jin-Woo LEE , Youn-Sean KANG , Seung-Jae JUNG , Hyun-Su JU , Masayuki TERAI
IPC分类号： H01L27/24 , H01L43/08 , H01L43/02 , H01L45/00 , H01L27/22
CPC分类号： H01L27/2463 , H01L27/224 , H01L27/2409 , H01L43/12 , H01L45/1675
摘要： A variable resistance memory device includes a plurality of first conductive layer pattern, a plurality of second conductive layer patterns over the first conductive layer patterns, and a plurality of lower cell structures including a switching element and a variable resistance element, the lower cell structures being formed at intersections at which the first conductive layer patterns and the second conductive layer patterns overlap each other. The first conductive layer patterns, the second conductive layer patterns and the lower cell structures serves as one of a memory cell, a first dummy pattern structure and a second dummy pattern structure. The first dummy pattern structure is formed on both edge portions in the first direction, and the second conductive layer pattern of the first dummy pattern structure protrudes in the first direction from a sidewall of the lower cell structure thereunder, and the second dummy pattern structure is formed on both edge portions in the second direction, and the first conductive layer pattern of the second dummy pattern structure protrudes in the second direction from a sidewall of the lower cell structure thereon. Failures of the variable resistance memory device due to the etch residue may decrease.
摘要翻译：可变电阻存储器件包括多个第一导电层图案，多个第一导电层图案上的第二导电层图案，以及包括开关元件和可变电阻元件的多个下单元结构，下单元结构为形成在第一导电层图案和第二导电层图案彼此重叠的交点处。第一导电层图案，第二导电层图案和下单元结构用作存储单元，第一虚设图案结构和第二虚设图案结构之一。第一虚设图形结构形成在第一方向的两个边缘部分上，第一虚设图案结构的第二导电层图案从其下部单元结构的侧壁沿第一方向突出，第二虚设图案结构为形成在第二方向的两个边缘部分上，并且第二虚设图案结构的第一导电层图案在其下面的单元结构的侧壁上沿第二方向突出。由于蚀刻残留导致的可变电阻存储器件的故障可能降低。

2. 发明申请

US20170237000A1 VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20170237000A1
公开(公告)日：2017-08-17
申请号：US15346751
申请日：2016-11-09
申请人： Masayuki TERAI , Dae-Hwan KANG , Gwan-Hyeob KOH
发明人： Masayuki TERAI , Dae-Hwan KANG , Gwan-Hyeob KOH
IPC分类号： H01L45/00
摘要： A variable resistance memory device and a method of manufacturing the same, the device including first conductive lines disposed in a first direction on a substrate, each of the first conductive lines extending in a second direction crossing the first direction, and the first and second directions being parallel to a top surface of the substrate; second conductive lines disposed in the second direction over the first conductive lines, each of the second conductive lines extending in the first direction; a memory unit between the first and second conductive lines, the memory unit being in each area overlapping the first and second conductive lines in a third direction substantially perpendicular to the top surface of the substrate, and the memory unit including a variable resistance pattern; and an insulation layer structure between the first and second conductive lines, the insulation layer structure covering the memory unit and including an air gap in at least a portion of an area overlapping neither the first conductive lines nor the second conductive lines in the third direction.

3. 发明申请

US20130064002A1 RESISTANCE CHANGE NONVOLATILE MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF OPERATING RESISTANCE CHANGE NONVOLATILE MEMORY DEVICE 有权
标题翻译：电阻变化非易失性存储器件，半导体器件和操作电阻变化非易失性存储器件的方法
公开(公告)号：US20130064002A1
公开(公告)日：2013-03-14
申请号：US13563604
申请日：2012-07-31
申请人： Masayuki TERAI
发明人： Masayuki TERAI
IPC分类号： H01L45/00 , G11C11/21
CPC分类号： G11C13/0002 , G11C13/0007 , G11C2213/79 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1616 , H01L45/1675
摘要： A resistance change nonvolatile memory device includes with a first electrode, a resistance change portion provided on the first electrode, and a second electrode provided on the resistance change portion. The resistance change portion is equipped with a resistance change layer provided on the first electrode and undergoing a change in resistance with an applied voltage and a stable layer provided on the resistance change layer and forming a filament. The resistance change layer and the stable layer are made of metal oxides different from each other. The oxide formation energy of the resistance change layer is higher than that of the stable layer. The resistance change layer has such a film thickness as to permit the resistance of the resistance change portion in an Off state to fall within a range determined by the film thickness.
摘要翻译：电阻变化非易失性存储器件包括第一电极，设置在第一电极上的电阻变化部分和设置在电阻变化部分上的第二电极。电阻变化部分配备有设置在第一电极上并且施加电压的电阻变化的电阻变化层和设置在电阻变化层上并形成长丝的稳定层。电阻变化层和稳定层由彼此不同的金属氧化物制成。电阻变化层的氧化物形成能高于稳定层。电阻变化层具有使电阻变化部处于断开状态的电阻落在由膜厚决定的范围内的膜厚。

4. 发明申请

US20130064001A1 RESISTANCE CHANGE NONVOLATILE MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING RESISTANCE CHANGE NONVOLATILE MEMORY DEVICE 有权
标题翻译：电阻变化非易失性存储器件，半导体器件和制造电阻变化非易失性存储器件的方法
公开(公告)号：US20130064001A1
公开(公告)日：2013-03-14
申请号：US13551511
申请日：2012-07-17
申请人： Masayuki TERAI
发明人： Masayuki TERAI
IPC分类号： H01L47/00 , H01L21/02 , G11C11/00
CPC分类号： H01L27/2463 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2213/51 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1666
摘要： To provide a resistance change nonvolatile memory device performing a stable switching operation at a low cost. The resistance change nonvolatile memory device has a first wiring, an interlayer insulating layer formed thereon, a second wiring formed thereon, and a resistance change element formed between the first wiring and the second wiring. The interlayer insulating layer between the first wiring and the second wiring has a hole having a width not greater than that of the first wiring. The resistance change element is in contact with the first wiring and has a lower electrode at the bottom of the hole, a resistance change layer thereon, and an upper electrode thereon. They are formed inside the hole. The first wiring contains copper and the lower electrode contains at least one metal selected from the group consisting of ruthenium, tungsten, cobalt, platinum, gold, rhodium, iridium, and palladium.
摘要翻译：提供以低成本执行稳定切换操作的电阻变化非易失性存储器件。电阻变化非易失性存储器件具有第一布线，形成在其上的层间绝缘层，形成在其上的第二布线，以及形成在第一布线和第二布线之间的电阻变化元件。第一布线和第二布线之间的层间绝缘层具有不大于第一布线的宽度的孔。电阻变化元件与第一布线接触，并且在孔的底部具有下电极，其上的电阻变化层和上电极。它们形成在洞内。第一布线包含铜，下电极含有选自钌，钨，钴，铂，金，铑，铱和钯中的至少一种金属。

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