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1. 发明授权

US07300813B2 Method for manufacturing micro-machined switch using pull-up type contact pad 有权
公开(公告)号：US07300813B2
公开(公告)日：2007-11-27
申请号：US11231551
申请日：2005-09-20
申请人： Jin-Koo Rhee , Seong-Dae Lee
发明人： Jin-Koo Rhee , Seong-Dae Lee
IPC分类号： H01L21/00
CPC分类号： H01H59/0009
摘要： The present invention relates to the manufacture of a semiconductor switch for use in a variety of communication systems, and particularly to the manufacture of a RF micro-machined switch of pull-up type, wherein an electrostatic electrode is used so as to cause the contact pad involved in the operation of the switch to be pulled upward from below.The RF micro-machined switch of pull-up type according to the invention has a high isolation characteristic for shorting and opening the circuit and needs a low driving voltage, so that miniaturization of communication system is possible because a circuit for booting driving voltage is not required within the system. Further, the characteristic of switch is little changed after a long use because the metal composing the contact pad experiences little deformation during operation, whereby the semi-permanent use of switch is possible.The present invention provides a pull-up type RF micro-machined switch, wherein the shorting of the contact pad with the transmission lines is possible with a low DC voltage by altering the conventional pull-down type electrostatic electrode into a pull-up structure and the opening of the circuit is facilitated by the weight of the contact pad by composing the contact pad in a thick metal layer.

2. 发明申请

US20070065978A1 Method for manufacturing micro-machined switch using pull-up type contact pad 有权
标题翻译：使用上拉式接触垫制造微加工开关的方法
公开(公告)号：US20070065978A1
公开(公告)日：2007-03-22
申请号：US11231551
申请日：2005-09-20
申请人： Jin-Koo Rhee , Seong-Dae Lee
发明人： Jin-Koo Rhee , Seong-Dae Lee
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： H01H59/0009
摘要： The present invention relates to the manufacture of a semiconductor switch for use in a variety of communication systems, and particularly to the manufacture of a RF micro-machined switch of pull-up type, wherein an electrostatic electrode is used so as to cause the contact pad involved in the operation of the switch to be pulled upward from below. The RF micro-machined switch of pull-up type according to the invention has a high isolation characteristic for shorting and opening the circuit and needs a low driving voltage, so that miniaturization of communication system is possible because a circuit for booting driving voltage is not required within the system. Further, the characteristic of switch is little changed after a long use because the metal composing the contact pad experiences little deformation during operation, whereby the semi-permanent use of switch is possible. The present invention provides a pull-up type RF micro-machined switch, wherein the shorting of the contact pad with the transmission lines is possible with a low DC voltage by altering the conventional pull-down type electrostatic electrode into a pull-up structure and the opening of the circuit is facilitated by the weight of the contact pad by composing the contact pad in a thick metal layer.
摘要翻译：本发明涉及一种用于各种通信系统的半导体开关的制造，特别涉及一种上拉式RF微加工开关的制造，其中使用静电电极以引起接触垫片涉及开关的操作，从下方向上拉。根据本发明的上拉型RF微加工开关具有高的隔离特性，用于短路和断开电路并且需要低驱动电压，使得通信系统的小型化是可能的，因为用于引导驱动电压的电路不是需要在系统内。此外，由于构成接触垫的金属在操作期间几乎没有变形，因此长时间使用后开关的特性几乎没有变化，从而可以半开式使用开关。本发明提供一种上拉型RF微加工开关，其中通过将常规下拉式静电电极改变为上拉结构，可以以低直流电压使接触焊盘与传输线短接，并且通过在厚金属层中构成接触垫，通过接触垫的重量来促进电路的开口。

3. 发明授权

US08048800B2 Fabrication method of two-terminal semiconductor component using trench technology 有权
标题翻译：使用沟槽技术的二端子半导体元件的制造方法
公开(公告)号：US08048800B2
公开(公告)日：2011-11-01
申请号：US12603766
申请日：2009-10-22
申请人： Jin-Koo Rhee , Seong-Dae Lee , Mi-Ra Kim , Dae-Hong Min , Wan-Joo Kim
发明人： Jin-Koo Rhee , Seong-Dae Lee , Mi-Ra Kim , Dae-Hong Min , Wan-Joo Kim
IPC分类号： H01L21/44 , H01L21/311
CPC分类号： H01L29/6609 , H01L21/30625 , H01L29/66083 , H01L29/66166 , H01L29/66174
摘要： A method of fabricating a two-terminal semiconductor component using a trench technique is disclosed that includes forming a trench by etching an etching pattern formed on a substrate on which an active layer having impurities added is grown, forming a front metal layer on a front upper surface of the substrate by using an evaporation method or a sputtering method after removing the etching pattern, forming a metal plated layer on the front surface of the substrate on which the front metal layer is formed, polishing a lower surface of the substrate by using at least one of a mechanical polishing method and a chemical polishing method until the front metal layer is exposed, forming a rear metal layer on the polished substrate, and removing each component by using at least one of a dry etching method and a wet etching method.
摘要翻译：公开了一种使用沟槽技术制造二端子半导体部件的方法，包括通过蚀刻形成在其上生长有杂质添加的有源层的基板上形成的蚀刻图案来形成沟槽，在正面上方形成前金属层在去除蚀刻图案之后，通过使用蒸镀法或溅射法形成基板的表面，在其上形成有前金属层的基板的前表面上形成金属镀层，使用在至少一种机械抛光方法和化学抛光方法，直到暴露前金属层，在抛光的基底上形成后金属层，并且通过使用干蚀刻方法和湿蚀刻方法中的至少一种来去除每个部件。

4. 发明申请

US20110059609A1 FABRICATION METHOD OF TWO-TERMINAL SEMICONDUCTOR COMPONENT USING TRENCH TECHNOLOGY 有权
标题翻译：使用TRENCH技术的双端半导体元件的制造方法
公开(公告)号：US20110059609A1
公开(公告)日：2011-03-10
申请号：US12603766
申请日：2009-10-22
申请人： Jin-Koo Rhee , Seong-Dae Lee , Mi-Ra Kim , Dae-Hong Min
发明人： Jin-Koo Rhee , Seong-Dae Lee , Mi-Ra Kim , Dae-Hong Min
IPC分类号： H01L21/283
CPC分类号： H01L29/6609 , H01L21/30625 , H01L29/66083 , H01L29/66166 , H01L29/66174
摘要： A method of fabricating a two-terminal semiconductor component using a trench technique is disclosed that includes forming a trench by etching an etching pattern formed on a substrate on which an active layer having impurities added is grown, forming a front metal layer on a front upper surface of the substrate by using an evaporation method or a sputtering method after removing the etching pattern, forming a metal plated layer on the front surface of the substrate on which the front metal layer is formed, polishing a lower surface of the substrate by using at least one of a mechanical polishing method and a chemical polishing method until the front metal layer is exposed, forming a rear metal layer on the polished substrate, and removing each component by using at least one of a dry etching method and a wet etching method.
摘要翻译：公开了一种使用沟槽技术制造二端子半导体部件的方法，包括通过蚀刻形成在其上生长有杂质添加的有源层的基板上形成的蚀刻图案来形成沟槽，在正面上方形成前金属层在去除蚀刻图案之后，通过使用蒸镀法或溅射法形成基板的表面，在其上形成有前金属层的基板的前表面上形成金属镀层，使用在至少一种机械抛光方法和化学抛光方法，直到暴露前金属层，在抛光的基底上形成后金属层，并且通过使用干蚀刻方法和湿蚀刻方法中的至少一种来去除每个部件。

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