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1. 发明申请

US20100260223A1 Quantum dot laser diode and method of fabricating the same 审中-公开
标题翻译：量子点激光二极管及其制造方法
公开(公告)号：US20100260223A1
公开(公告)日：2010-10-14
申请号：US11633201
申请日：2006-12-04
申请人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
发明人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
IPC分类号： H01S5/343 , H01L33/02
CPC分类号： H01S5/341 , B82Y20/00 , H01S5/3403 , H01S5/3412 , H01S5/34306 , H01S2304/00
摘要： A quantum dot laser diode and a method of fabricating the same are provided. The quantum dot laser diode includes: a first clad layer formed on an InP substrate; a first lattice-matched layer formed on the first clad layer; an active layer formed on the first lattice-matched layer, and including at least one quantum dot layer formed of an InAlAs quantum dot or an InGaPAs quantum dot which is grown by an alternate growth method; a second lattice-matched layer formed on the active layer; a second clad layer formed on the second lattice-matched layer, and an ohmic contact layer formed on the second clad layer.
摘要翻译：提供了一种量子点激光二极管及其制造方法。量子点激光二极管包括：形成在InP衬底上的第一覆层; 形成在第一覆盖层上的第一晶格匹配层; 形成在第一晶格匹配层上的活性层，并且包括由交替生长法生长的InAlAs量子点或InGaPAs量子点形成的至少一个量子点层; 形成在所述有源层上的第二晶格匹配层; 形成在第二晶格匹配层上的第二覆盖层和形成在第二覆盖层上的欧姆接触层。

2. 发明授权

US09006749B2 Quantum dot laser diode and method of manufacturing the same 有权
公开(公告)号：US09006749B2
公开(公告)日：2015-04-14
申请号：US12499902
申请日：2009-07-09
申请人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
发明人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
IPC分类号： H01L27/15 , H01S5/12 , B82Y20/00 , H01S5/34 , H01S5/343
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/3412 , H01S5/34306 , H01S2301/173
摘要： Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.

3. 发明授权

US07575943B2 Quantum dot laser diode and method of manufacturing the same 有权
标题翻译：量子点激光二极管及其制造方法
公开(公告)号：US07575943B2
公开(公告)日：2009-08-18
申请号：US11607516
申请日：2006-12-01
申请人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
发明人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
IPC分类号： H01L21/00
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/3412 , H01S5/34306 , H01S2301/173
摘要： Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.
摘要翻译：提供量子点激光二极管及其制造方法。制造量子点激光二极管的方法包括以下步骤：在衬底上形成包括多个光栅的光栅结构层; 在所述光栅结构层上形成第一晶格匹配层; 在所述第一晶格匹配层上形成至少一个具有至少一个量子点的量子点层; 在量子点层上形成第二晶格匹配层; 在第二晶格匹配层上形成包覆层; 以及在所述包覆层上形成欧姆接触层。因此，可以在不影响量子点的均匀性的情况下获得期望波长的高增益，从而可以提高激光二极管的特性。

4. 发明申请

US20060222027A1 Method for forming quantum dots by alternate growth process 失效
标题翻译：通过交替生长过程形成量子点的方法
公开(公告)号：US20060222027A1
公开(公告)日：2006-10-05
申请号：US11272617
申请日：2005-11-14
申请人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Byung Seok Choi , Ho Sang Kwack , Dae Kon Oh
发明人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Byung Seok Choi , Ho Sang Kwack , Dae Kon Oh
IPC分类号： H01S5/00
CPC分类号： H01S5/341 , B82Y10/00 , B82Y20/00 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02543 , H01L21/02546 , H01S5/3403 , H01S5/3412 , H01S5/34306 , Y10S438/962
摘要： Provided is a method of forming quantum dots, including: forming a buffer layer on an InP substrate so as to be lattice-matched with the InP substrate; and sequentially alternately depositing In(Ga)As layers and InAl(Ga)As or In(Ga, Al, As)P layers that are greatly lattice-mismatched with each other on the buffer layer so as to form In(Ga, Al)As or In(Ga, Al, P)As quantum dots.
摘要翻译：提供一种形成量子点的方法，包括：在InP衬底上形成缓冲层以与InP衬底晶格匹配; 并顺序交替地沉积In（Ga）As层和InAl（Ga）As或In（Ga，Al，As）P层，在缓冲层上彼此大大地晶格失配，以形成In（Ga，Al） As或In（Ga，Al，P）作为量子点。

5. 发明授权

US07749787B2 Method for forming quantum dots by alternate growth process 失效
标题翻译：通过交替生长过程形成量子点的方法
公开(公告)号：US07749787B2
公开(公告)日：2010-07-06
申请号：US11272617
申请日：2005-11-14
申请人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Byung Seok Choi , Ho Sang Kwack , Dae Kon Oh
发明人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Byung Seok Choi , Ho Sang Kwack , Dae Kon Oh
IPC分类号： H01L21/00
CPC分类号： H01S5/341 , B82Y10/00 , B82Y20/00 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02543 , H01L21/02546 , H01S5/3403 , H01S5/3412 , H01S5/34306 , Y10S438/962
摘要： Provided is a method of forming quantum dots, including: forming a buffer layer on an InP substrate so as to be lattice-matched with the InP substrate; and sequentially alternately depositing In(Ga)As layers and InAl(Ga)As or In(Ga, Al, As)P layers that are greatly lattice-mismatched with each other on the buffer layer so as to form In(Ga, Al)As or In(Ga, Al, P)As quantum dots.
摘要翻译：提供一种形成量子点的方法，包括：在InP衬底上形成缓冲层以与InP衬底晶格匹配; 并顺序交替地沉积In（Ga）As层和InAl（Ga）As或In（Ga，Al，As）P层，在缓冲层上彼此大大地晶格失配，以形成In（Ga，Al） As或In（Ga，Al，P）作为量子点。

6. 发明申请

US20090296766A1 QUANTUM DOT LASER DIODE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：量子激光二极管及其制造方法
公开(公告)号：US20090296766A1
公开(公告)日：2009-12-03
申请号：US12499902
申请日：2009-07-09
申请人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
发明人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
IPC分类号： H01S5/00
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/3412 , H01S5/34306 , H01S2301/173
摘要： Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.
摘要翻译：提供量子点激光二极管及其制造方法。制造量子点激光二极管的方法包括以下步骤：在衬底上形成包括多个光栅的光栅结构层; 在所述光栅结构层上形成第一晶格匹配层; 在所述第一晶格匹配层上形成至少一个具有至少一个量子点的量子点层; 在量子点层上形成第二晶格匹配层; 在第二晶格匹配层上形成包覆层; 以及在所述包覆层上形成欧姆接触层。因此，可以在不影响量子点的均匀性的情况下获得期望波长的高增益，从而可以提高激光二极管的特性。

7. 发明申请

US20070128839A1 Quantum dot laser diode and method of manufacturing the same 有权
标题翻译：量子点激光二极管及其制造方法
公开(公告)号：US20070128839A1
公开(公告)日：2007-06-07
申请号：US11607516
申请日：2006-12-01
申请人： Jin Soo Kim , Jin Hong Lee , Sung Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
发明人： Jin Soo Kim , Jin Hong Lee , Sung Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/3412 , H01S5/34306 , H01S2301/173
摘要： Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.
摘要翻译：提供量子点激光二极管及其制造方法。制造量子点激光二极管的方法包括以下步骤：在衬底上形成包括多个光栅的光栅结构层; 在所述光栅结构层上形成第一晶格匹配层; 在所述第一晶格匹配层上形成至少一个具有至少一个量子点的量子点层; 在量子点层上形成第二晶格匹配层; 在第二晶格匹配层上形成包覆层; 以及在所述包覆层上形成欧姆接触层。因此，可以在不影响量子点的均匀性的情况下获得期望波长的高增益，从而可以提高激光二极管的特性。

8. 发明授权

US07551662B2 Distributed feedback (DFB) quantum dot laser structure 有权
标题翻译：分布式反馈（DFB）量子点激光器结构
公开(公告)号：US07551662B2
公开(公告)日：2009-06-23
申请号：US12096351
申请日：2006-11-24
申请人： Dae Kon Oh , Jin Hong Lee , Jin Soo Kim , Sung Ui Hong , Byung Seok Choi , Hyun Soo Kim , Sung Bock Kim
发明人： Dae Kon Oh , Jin Hong Lee , Jin Soo Kim , Sung Ui Hong , Byung Seok Choi , Hyun Soo Kim , Sung Bock Kim
IPC分类号： H01H3/08 , H01S5/00
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/0425 , H01S5/3412 , H01S5/34306 , H01S2301/185
摘要： A distributed feedback (DFB) quantum dot semiconductor laser structure is provided. The DFB quantum dot semi-conductor laser structure includes: a first clad layer formed on a lower electrode; an optical waveguide (WG) formed on the first clad layer; a grating structure layer formed on the optical WG and including a plurality of periodically disposed gratings; a first separate confinement hetero (SCH) layer formed on the grating structure layer; an active layer formed on the first SCH layer and including at least a quantum dot; a second SCH layer formed on the active layer; a second clad layer formed on the second SCH layer; an ohmic layer formed on the second clad layer; and an upper electrode formed on the ohmic layer. Accordingly, an optical WG is disposed on the opposite side of the active layer from the grating structure layer, thereby increasing single optical mode efficiency. And, an asymmetric multi-electrode structure is used for applying current, thereby maximizing purity and efficiency of the single mode semiconductor laser structure.
摘要翻译：提供了分布式反馈（DFB）量子点半导体激光器结构。 DFB量子点半导体激光器结构包括：形成在下电极上的第一覆层; 形成在第一包层上的光波导（WG）; 光栅结构层，形成在光学WG上并且包括多个周期性布置的光栅; 形成在所述光栅结构层上的第一分离限制性杂（SCH）层; 形成在第一SCH层上并包括至少一个量子点的有源层; 形成在所述有源层上的第二SCH层; 形成在第二SCH层上的第二覆层; 形成在所述第二覆盖层上的欧姆层; 和形成在欧姆层上的上电极。因此，光学WG设置在有源层与光栅结构层的相反侧，从而提高单一光模式效率。并且，使用非对称多电极结构来施加电流，从而最大化单模半导体激光器结构的纯度和效率。

9. 发明申请

US20080279243A1 Distributed Feedback (Dfb) Quantum Dot Laser Structure 有权
标题翻译：分布式反馈（Dfb）量子点激光器结构
公开(公告)号：US20080279243A1
公开(公告)日：2008-11-13
申请号：US12096351
申请日：2006-11-24
申请人： Dae Kon OH , Jin Hong Lee , Jin Soo Kim , Sung Ui Hong , Byung Seok Choi , Hyun Soo Kim , Sung Bock Kim
发明人： Dae Kon OH , Jin Hong Lee , Jin Soo Kim , Sung Ui Hong , Byung Seok Choi , Hyun Soo Kim , Sung Bock Kim
IPC分类号： H01S5/00
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/0425 , H01S5/3412 , H01S5/34306 , H01S2301/185
摘要： A distributed feedback (DFB) quantum dot semiconductor laser structure is provided. The DFB quantum dot semi-conductor laser structure includes: a first clad layer formed on a lower electrode; an optical waveguide (WG) formed on the first clad layer; a grating structure layer formed on the optical WG and including a plurality of periodically disposed gratings; a first separate confinement hetero (SCH) layer formed on the grating structure layer; an active layer formed on the first SCH layer and including at least a quantum dot; a second SCH layer formed on the active layer; a second clad layer formed on the second SCH layer; an ohmic layer formed on the second clad layer; and an upper electrode formed on the ohmic layer. Accordingly, an optical WG is disposed on the opposite side of the active layer from the grating structure layer, thereby increasing single optical mode efficiency. And, an asymmetric multi-electrode structure is used for applying current, thereby maximizing purity and efficiency of the single mode semiconductor laser structure.
摘要翻译：提供了分布式反馈（DFB）量子点半导体激光器结构。 DFB量子点半导体激光器结构包括：形成在下电极上的第一覆层; 形成在第一包层上的光波导（WG）; 光栅结构层，形成在光学WG上并且包括多个周期性布置的光栅; 形成在所述光栅结构层上的第一分离限制性杂（SCH）层; 形成在第一SCH层上并包括至少一个量子点的有源层; 形成在所述有源层上的第二SCH层; 形成在第二SCH层上的第二覆层; 形成在所述第二覆盖层上的欧姆层; 和形成在欧姆层上的上电极。因此，光学WG设置在有源层与光栅结构层的相反侧，从而提高单一光模式效率。并且，使用非对称多电极结构来施加电流，从而最大化单模半导体激光器结构的纯度和效率。

10. 发明申请

US20100252094A1 High-Efficiency Solar Cell and Method of Manufacturing the Same 审中-公开
标题翻译：高效率太阳能电池及其制造方法
公开(公告)号：US20100252094A1
公开(公告)日：2010-10-07
申请号：US12676734
申请日：2008-07-31
申请人： Hyun Soo Kim , Won Seok Han , Byung Seok Choi , Dae Kon Oh
发明人： Hyun Soo Kim , Won Seok Han , Byung Seok Choi , Dae Kon Oh
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/068 , H01L31/022425 , H01L31/02245 , H01L31/0547 , Y02E10/52 , Y02E10/547
摘要： Provided are a high-efficiency solar cell, which converts light energy of incident light into electrical energy, and a method of manufacturing the same. An upper ohmic layer is formed at a predetermined tilt angle less than 45° and an ohmic electrode is deposited on the upper ohmic layer so as to reduce shadow loss due to the ohmic electrode and lessen contact resistance.
摘要翻译：提供了将入射光的光能转换为电能的高效率太阳能电池及其制造方法。以小于45°的预定倾斜角度形成上欧姆层，并且在上欧姆层上沉积欧姆电极，以减少由于欧姆电极引起的阴影损失并降低接触电阻。

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