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1. 发明授权

US06326226B1 Method of crystallizing an amorphous film 失效
标题翻译：使非晶膜结晶的方法
公开(公告)号：US06326226B1
公开(公告)日：2001-12-04
申请号：US09115498
申请日：1998-07-14
申请人： Jin Jang , Soo-Young Yoon , Jae-Young Oh
发明人： Jin Jang , Soo-Young Yoon , Jae-Young Oh
IPC分类号： H01L2120
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022
摘要： A method of crystallizing an amorphous film includes the steps of forming an amorphous film capable of being crystallized on a substrate, the amorphous film being in contact with a metal layer; and crystallizing the amorphous film by forming an electric field in the amorphous film and the metal layer, while simultaneously subjecting the amorphous film and the metal layer to a thermal treatment, thereby crystallizing the amorphous film.
摘要翻译：结晶非晶膜的方法包括以下步骤：形成能够在基板上结晶的非晶膜，所述非晶膜与金属层接触; 并且通过在非晶膜和金属层中形成电场而结晶非晶膜，同时对非晶膜和金属层进行热处理，从而使非晶膜结晶。

2. 发明授权

US06524662B2 Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof 有权
标题翻译：非晶硅层结晶方法及其结晶装置
公开(公告)号：US06524662B2
公开(公告)日：2003-02-25
申请号：US09350816
申请日：1999-07-09
申请人： Jin Jang , Soo-Young Yoon , Jae-Young Oh , Woo-Sung Shon , Seong-Jin Park
发明人： Jin Jang , Soo-Young Yoon , Jae-Young Oh , Woo-Sung Shon , Seong-Jin Park
IPC分类号： H05H100
CPC分类号： C30B1/023 , C30B29/06
摘要： The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using of electric fields and plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer while applying an electric field to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, an electric field generating means in the chamber wherein the electric field generating means applies electric field to the substrate, and a heater at the substrate support wherein the heater supplies the substrate with heat.
摘要翻译：本发明涉及一种使非晶硅层结晶的方法及其使用电场和等离子体使非晶硅层结晶的结晶装置。本发明包括以下步骤：通过等离子体曝光在非晶硅层上淀积用于硅结晶的诱导物质，同时对非晶硅层施加电场，对非晶硅层进行退火。本发明包括具有内部空间的腔室，腔室中的衬底支撑件，其中衬底支撑件支撑衬底;腔室中的等离子体产生装置，其中等离子体产生装置在室内产生等离子体;电场产生装置，其中电场产生装置向衬底施加电场，以及在衬底支撑件处的加热器，其中加热器对衬底供热。

3. 发明授权

US07022191B2 Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof 有权
标题翻译：非晶硅层结晶方法及其结晶装置
公开(公告)号：US07022191B2
公开(公告)日：2006-04-04
申请号：US10899014
申请日：2004-07-27
申请人： Jin Jang , Soo-Young Yoon , Jae-Young Oh , Woo-Sung Shon , Seong-Jin Park
发明人： Jin Jang , Soo-Young Yoon , Jae-Young Oh , Woo-Sung Shon , Seong-Jin Park
IPC分类号： C30B25/14
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , H01J37/32009 , H01L21/02532 , H01L21/02595 , H01L21/2022 , Y10T117/10 , Y10T117/1008
摘要： The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.
摘要翻译：本发明涉及一种使非晶硅层结晶的方法及其使用等离子体结晶非晶硅层的结晶装置。本发明包括以下步骤：通过等离子体曝光在非晶硅层上沉积用于硅结晶的诱导物质，并在非晶硅层上对非晶硅层进行退火。本发明包括具有内部空间的腔室，腔室中的衬底支撑件，其中衬底支撑件支撑衬底;腔室中的等离子体产生装置，其中等离子体产生装置在室内产生等离子体，以及衬底支撑件处的加热器其中所述加热器对所述基板供热。

4. 发明授权

US06818059B2 Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof 有权
标题翻译：非晶硅层结晶方法及其结晶装置
公开(公告)号：US06818059B2
公开(公告)日：2004-11-16
申请号：US09350313
申请日：1999-07-09
申请人： Jin Jang , Soo-Young Yoon , Jae-Young Oh , Woo-Sung Shon , Seong-Jin Park
发明人： Jin Jang , Soo-Young Yoon , Jae-Young Oh , Woo-Sung Shon , Seong-Jin Park
IPC分类号： C30B106
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , H01J37/32009 , H01L21/02532 , H01L21/02595 , H01L21/2022 , Y10T117/10 , Y10T117/1008
摘要： The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.
摘要翻译：本发明涉及一种使非晶硅层结晶的方法及其使用等离子体结晶非晶硅层的结晶装置。本发明包括以下步骤：通过等离子体曝光在非晶硅层上沉积用于硅结晶的诱导物质，并在非晶硅层上对非晶硅层进行退火。本发明包括具有内部空间的腔室，腔室中的衬底支撑件，其中衬底支撑件支撑衬底;腔室中的等离子体产生装置，其中等离子体产生装置在室内产生等离子体，以及衬底支撑件处的加热器其中所述加热器对所述基板供热。

5. 发明授权

US06241817B1 Method for crystallizing amorphous layer 失效
标题翻译：非晶层结晶方法
公开(公告)号：US06241817B1
公开(公告)日：2001-06-05
申请号：US09083109
申请日：1998-05-22
申请人： Jin Jang , Soo-Young Yoon , Jae-Young Oh
发明人： Jin Jang , Soo-Young Yoon , Jae-Young Oh
IPC分类号： C30B106
CPC分类号： C30B1/023 , C30B29/06
摘要： A method for crystallizing an amorphous layer into a polycrystalline layer. The method uses a substrate under the amorphous layer and a nickel film on the amorphous layer, which are subjected to a heat treatment. The nickel film is formed by a coating step that uses a nickel-containing solution. Alternatively, a nickel and gold, or a nickel and palladium, solution can be used. The method eliminates contamination with metal in the polycrystalline silicon layer and reduces its growth temperature.
摘要翻译：一种将非晶层结晶成多晶层的方法。该方法使用非晶层下的衬底和非晶层上的镍膜进行热处理。镍膜通过使用含镍溶液的涂布步骤形成。或者，可以使用镍和金，或镍和钯的溶液。该方法消除了多晶硅层中金属的污染并降低其生长温度。

6. 发明授权

US08235969B2 Medical device shaft designs 有权
标题翻译：医疗器械轴设计
公开(公告)号：US08235969B2
公开(公告)日：2012-08-07
申请号：US11276554
申请日：2006-03-06
申请人： Daniel Gregorich , Soo-Young Yoon , Liza J. Davis , Tracee E. J. Eidenschink
发明人： Daniel Gregorich , Soo-Young Yoon , Liza J. Davis , Tracee E. J. Eidenschink
IPC分类号： A61M25/00
CPC分类号： A61M25/0023 , A61M25/0043 , A61M25/10 , A61M2025/0059
摘要： Devices and methods for transferring forces down a catheter shaft while also maintaining an open fluid pathway are disclosed. In some of the designs, inner and outer members of the catheter interact, allowing improved transfer of forces down the catheter shaft. These designs also allow for maintenance of a fluid pathway along the length of the shaft, including at locations where the inner and outer members are interacting with one another. Structures are disclosed which extend at least a portion of the length of the shaft, allowing improved force transfer and resistance to kinking. Structures are also disclosed which specifically allow for inner and outer members to engage one another at at least one point along the shaft, improving the transfer of forces down the shaft.
摘要翻译：公开了用于在导管轴下方传递力同时保持开放流体路径的装置和方法。在一些设计中，导管的内部和外部构件相互作用，允许改善力沿导管轴的传递。这些设计还允许维持沿着轴的长度的流体路径，包括在内部和外部构件彼此相互作用的位置处。公开了延伸轴的长度的至少一部分的结构，允许改进的力传递和抵抗扭结。还公开了具体允许内部构件和外部构件在沿着轴的至少一个点处彼此接合的结构，从而改善了沿轴的力的传递。

7. 发明申请

US20120004719A1 Stent Configurations 有权
标题翻译：支架配置
公开(公告)号：US20120004719A1
公开(公告)日：2012-01-05
申请号：US13230758
申请日：2011-09-12
申请人： Daniel Gregorich , Soo-Young Yoon , Michael P. Meyer
发明人： Daniel Gregorich , Soo-Young Yoon , Michael P. Meyer
IPC分类号： A61F2/82
CPC分类号： A61F2/91 , A61F2/915 , A61F2002/91508 , A61F2002/91516 , A61F2002/91525 , A61F2002/91533 , A61F2002/91558
摘要： A stent may comprise a plurality of serpentine bands, wherein adjacent serpentine bands are connected by at least one connector strut. A serpentine band may comprise alternating straight struts and s-shaped struts. Connector struts may comprise first connector struts and second connector struts, wherein the first connector struts are nonparallel to the second connector struts.
摘要翻译：支架可以包括多个蛇形带，其中相邻的蛇形带通过至少一个连接器支柱连接。蛇形带可以包括交替的直的支柱和s形的支柱。连接器支柱可以包括第一连接器支柱和第二连接器支柱，其中第一连接器支柱不平行于第二连接器支柱。

8. 发明授权

US07349519B2 Shift register without noise and liquid crystal display device having the same 有权
标题翻译：无噪声的移位寄存器和具有相同的液晶显示装置
公开(公告)号：US07349519B2
公开(公告)日：2008-03-25
申请号：US11171562
申请日：2005-06-30
申请人： Yong-Ho Jang , Binn Kim , Soo-Young Yoon
发明人： Yong-Ho Jang , Binn Kim , Soo-Young Yoon
IPC分类号： G11C19/00
CPC分类号： G09G3/3677 , G09G2300/0408 , G11C19/00 , G11C19/28
摘要： A shift register structure comprising a shift register for sequentially outputting voltages as a clock signal and a start voltage are inputted thereto, and a cleaner means connected to the shift register for removing noise within the start voltage. The cleaner means is a transistor for inputting a clock signal to a gate and for inputting a signal outputted from the shift register to a source.
摘要翻译：输入移位寄存器结构，其包括用于顺序地输出电压作为时钟信号的移位寄存器和起始电压，以及连接到移位寄存器的清除器装置，用于消除起始电压内的噪声。清洁装置是用于将时钟信号输入到门并将从移位寄存器输出的信号输入到源的晶体管。

9. 发明授权

US06501594B1 Long-band fiber amplifier using feedback loop 失效
标题翻译：长波段光纤放大器采用反馈回路
公开(公告)号：US06501594B1
公开(公告)日：2002-12-31
申请号：US09624135
申请日：2000-07-21
申请人： Seong-Teak Hwang , Soo-Young Yoon , Rae-Sung Jung , Jeong-Mee Kim , Sung-Jun Kim
发明人： Seong-Teak Hwang , Soo-Young Yoon , Rae-Sung Jung , Jeong-Mee Kim , Sung-Jun Kim
IPC分类号： H04B1017
CPC分类号： H04B10/296 , H01S3/06754 , H01S3/0677 , H01S3/094011 , H01S3/094023 , H01S3/10023 , H01S3/10092 , H01S2301/04
摘要： Disclosed is a long-band (L-band) fiber amplifier using a feedback loop which includes a rare earth doped fiber as an amplification medium, forward and backward pump laser diodes, positioned on front and rear ends of the rare earth doped fiber, respectively, for generating pumping lights, first wavelength selective couplers for providing the pumping lights from the pump laser diodes to the rare earth doped fiber, optical isolators, inserted into front and rear ends of the first wavelength selective couplers, respectively, for intercepting backward propagation of signal lights reflected from input and output terminals of the fiber amplifier, a feedback loop for making a seed beam incident to the rare earth doped fiber or making an amplified spontaneous emission (ASE) incident again to the rare earth doped fiber, second wavelength selective couplers, provided between the optical isolators and the first wavelength selective couplers, respectively, for making the seed beam incident to the feedback loop or extracting and providing the ASE to the feedback loop, and a filter, connected to the feedback loop, for filtering a specified wavelength of the seed beam or the ASE.
摘要翻译：公开了一种使用反馈回路的长波段（L波段）光纤放大器，其包括稀土掺杂光纤作为放大介质，分别位于稀土掺杂光纤的前端和后端的前向和后向激光二极管，用于产生泵浦光的第一波长选择耦合器，用于分别从第一波长选择耦合器插入到第一波长选择耦合器的前端和后端，从泵浦激光二极管分别提供泵浦光到稀土掺杂光纤，光隔离器，用于截取反向传播从光纤放大器的输入和输出端反射的信号光，用于使种子光束入射到稀土掺杂光纤的反馈回路或再次对稀土掺杂光纤进行放大的自发发射（ASE）入射;第二波长选择耦合器分别设置在光隔离器和第一波长选择耦合器之间，用于使种子束入射到该光隔离器反馈回路或提取ASE并将其提供给反馈回路，以及连接到反馈回路的滤波器，用于过滤种子束或ASE的指定波长。

10. 发明授权

US06339494B1 Gain flattened optical fiber amplifier 失效
标题翻译：增益平坦的光纤放大器
公开(公告)号：US06339494B1
公开(公告)日：2002-01-15
申请号：US09482536
申请日：2000-01-14
申请人： Seong-Teak Hwang , Soo-Young Yoon , Rae-Sung Jung
发明人： Seong-Teak Hwang , Soo-Young Yoon , Rae-Sung Jung
IPC分类号： H01S300
CPC分类号： H04B10/2941 , H01S3/06754 , H01S3/06758 , H01S3/094011 , H01S2301/04 , H04B2210/003
摘要： An optical fiber amplifier capable of having a flattened gain irrespective of the intensity of an input signal light. The optical fiber amplifier includes a first amplifying unit for amplifying an input signal light using a first pumping light to obtain a predetermined gain, a second amplifying unit for re-amplifying the signal light amplified by the first amplifying unit, using a second pumping light, to obtain the same gain as the predetermined gain, and a pumping light separating unit for allowing the amplified signal light outputted from the first amplifying unit to enter the second amplifying unit while preventing the first pumping light from reaching the second amplifying unit and preventing the second pumping light from reaching the first amplifying unit, whereby the amplified signal light entering the second amplifying unit is allowed to be amplified only by the second pumping light.
摘要翻译：能够与输入信号光的强度无关地具有扁平增益的光纤放大器。光纤放大器包括：第一放大单元，用于使用第一泵浦光放大输入信号光以获得预定增益;第二放大单元，用于使用第二泵浦光对由第一放大单元放大的信号光进行再放大; 以获得与预定增益相同的增益;以及泵浦光分离单元，用于允许从第一放大单元输出的放大信号光进入第二放大单元，同时防止第一泵浦光到达第二放大单元，并防止第二放大单元泵浦光到达第一放大单元，由此仅允许通过第二泵浦光放大进入第二放大单元的放大信号光。

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