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1. 发明申请

US20110107049A1 METHOD AND APPARATUS ADAPTED TO PREVENT CODE DATA FROM BEING LOST IN SOLDER REFLOW 有权
标题翻译：适用于防止在焊接机反射中丢失代码数据的方法和装置
公开(公告)号：US20110107049A1
公开(公告)日：2011-05-05
申请号：US12847073
申请日：2010-07-30
申请人： Jin Hyoung Kwon , Hui Kwon Seo
发明人： Jin Hyoung Kwon , Hui Kwon Seo
IPC分类号： G06F12/16 , G06F12/02
CPC分类号： G06F11/004 , G11C11/5628
摘要： A semiconductor device comprises a first non-volatile memory configured to store program code and a processor configured to copy the program code from the first non-volatile memory to a second non-volatile memory after a solder reflow process. The processor typically copies the program code from the first non-volatile memory to the second non-volatile memory after the processor is completely booted.
摘要翻译：半导体器件包括被配置为存储程序代码的第一非易失性存储器和配置成在焊料回流处理之后将程序代码从第一非易失性存储器复制到第二非易失性存储器的处理器。在处理器完全引导之后，处理器通常将程序代码从第一非易失性存储器复制到第二非易失性存储器。

2. 发明授权

US08788741B2 Method and apparatus adapted to prevent code data from being lost in solder reflow 有权
标题翻译：适于防止代码数据在焊料回流中丢失的方法和装置
公开(公告)号：US08788741B2
公开(公告)日：2014-07-22
申请号：US12847073
申请日：2010-07-30
申请人： Jin Hyoung Kwon , Hui Kwon Seo
发明人： Jin Hyoung Kwon , Hui Kwon Seo
IPC分类号： G06F12/00 , G06F11/00 , G11C11/56
CPC分类号： G06F11/004 , G11C11/5628
摘要： A semiconductor device comprises a first non-volatile memory configured to store program code and a processor configured to copy the program code from the first non-volatile memory to a second non-volatile memory after a solder reflow process. The processor typically copies the program code from the first non-volatile memory to the second non-volatile memory after the processor is completely booted.
摘要翻译：半导体器件包括被配置为存储程序代码的第一非易失性存储器和配置成在焊料回流处理之后将程序代码从第一非易失性存储器复制到第二非易失性存储器的处理器。在处理器完全引导之后，处理器通常将程序代码从第一非易失性存储器复制到第二非易失性存储器。

3. 发明申请

US20100185811A1 Data processing system and method 审中-公开
标题翻译：数据处理系统及方法
公开(公告)号：US20100185811A1
公开(公告)日：2010-07-22
申请号：US12654845
申请日：2010-01-06
申请人： Jin Hyoung Kwon
发明人： Jin Hyoung Kwon
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7208
摘要： A data processing system including a non-volatile memory and a processor controlling an operation of the non-volatile memory is provided. The processor transmits and receives a first type of data to and from an outside through a first path through which a first command and a first address, which are used to write/read the first data to/from the non-volatile memory, are transmitted. The processor also transmits and receives a second type of data to and from the outside through a second path different from the first path through which a second command and a second address, which are used to write/read the second data to/from the non-volatile memory, are transmitted.
摘要翻译：提供了包括非易失性存储器和控制非易失性存储器的操作的处理器的数据处理系统。处理器通过第一路径向外部发送和从外部接收第一类型的数据，通过该第一路径发送用于向/从非易失性存储器写入/读取第一数据的第一命令和第一地址。处理器还通过不同于第一路径的第二路径向外部发送和从外部接收第二类型的数据，第二路径用于将第二数据写入/读取非二进制数据，非易失存储器被传输。

4. 发明申请

US20100287424A1 Method of writing an operating systems (OS) image to a semiconductor device and the semiconductor device 审中-公开
标题翻译：将操作系统（OS）图像写入半导体器件和半导体器件的方法
公开(公告)号：US20100287424A1
公开(公告)日：2010-11-11
申请号：US12662749
申请日：2010-05-03
申请人： Jin Hyoung Kwon
发明人： Jin Hyoung Kwon
IPC分类号： G06F12/00 , G06F9/24 , G06F11/26 , G06F12/08
CPC分类号： G06F9/4401
摘要： Example embodiments are directed to a method of writing an Operating System (OS) image to a semiconductor device having a data storage device, an Application Specific Integrated Circuit (ASIC), and a non-volatile memory. The method includes initializing a DRAM interface of the ASIC using a boot loader, receiving the OS image input from a data writer to the semiconductor device through the DRAM interface; and writing the OS image into the non-volatile memory of the semiconductor device using a Flash Translation Layer (FTL) code.
摘要翻译：示例性实施例涉及将操作系统（OS）图像写入具有数据存储设备，专用集成电路（ASIC）和非易失性存储器的半导体器件的方法。该方法包括使用引导加载程序初始化ASIC的DRAM接口，通过DRAM接口接收从数据写入器输入到半导体器件的OS映像; 并使用闪存转换层（FTL）代码将OS映像写入半导体器件的非易失性存储器。

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