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1. 发明授权

US08286873B2 Combi card and communication system using thereof 有权
标题翻译： Combi卡及其使用的通信系统
公开(公告)号：US08286873B2
公开(公告)日：2012-10-16
申请号：US12818370
申请日：2010-06-18
申请人： Jin Ho Ryu , Jong Hoon Chae , Ho Sang Lee , Ho Geun Song , Jin Ki Hong , Hyun Mi Kim
发明人： Jin Ho Ryu , Jong Hoon Chae , Ho Sang Lee , Ho Geun Song , Jin Ki Hong , Hyun Mi Kim
IPC分类号： G06K7/00
CPC分类号： G06K19/07749 , G06K7/0008 , G06K19/077 , G06K19/07769
摘要： Provided is a combi-card, i.e. a combination type IC card, which can be used in either contact and non-contact manner, and a communication system using the same, and the combi-card is provided with a transponder chip module formed with a RF antenna and attached in a recess region of a card body and is characterized by the use of the RF antenna of the transponder chip alone as a transmitting and receiving antenna.
摘要翻译：提供了可以以接触和非接触方式使用的组合型IC卡，以及使用其的通信系统的组合卡，并且组合卡设置有应答器芯片模块，其形成有射频天线，并附着在卡体的凹陷区域中，其特征在于将应答器芯片的RF天线单独用作发射和接收天线。

2. 发明授权

US08289109B2 Electromagnetic bandgap pattern structure, method of manufacturing the same, and security product using the same 有权
标题翻译：电磁带隙图案结构，制造方法及使用其的安全产品
公开(公告)号：US08289109B2
公开(公告)日：2012-10-16
申请号：US12784356
申请日：2010-05-20
申请人： Jong Won Yu , Won Gyu Lim , Hyeong Seok Jang , Dong Hoon Shin , Jin Ho Ryu , Hyun Mi Kim , Won Gyun Choe
发明人： Jong Won Yu , Won Gyu Lim , Hyeong Seok Jang , Dong Hoon Shin , Jin Ho Ryu , Hyun Mi Kim , Won Gyun Choe
IPC分类号： H01P1/203 , G03F7/20
CPC分类号： H01Q17/00 , H01P1/2005 , H01P1/20381
摘要： An electromagnetic bandgap (EBG) pattern structure includes a nonconductive substrate and a pattern assembly formed on the substrate. The EBG pattern structure also includes regularly arranged closed-loop patterns and open-loop patterns, both of which are made of a conductive material. The EBG pattern structure can be used to manufacture new security products by applying its frequency characteristics to securities or IDs and variously used in security technologies for preventing forgery and alteration because various security codes can be created by adjusting the variables of its EBG pattern.
摘要翻译：电磁带隙（EBG）图案结构包括非导电衬底和形成在衬底上的图案组件。 EBG图案结构还包括规则排列的闭环图案和开环图案，它们均由导电材料制成。 EBG模式结构可用于通过将其频率特性应用于证券或ID，并且用于防止伪造和变更的安全技术中的各种安全技术来制造新的安全产品，因为可以通过调整其EBG模式的变量来创建各种安全代码。

3. 发明授权

US08146800B2 Apparatus for recognizing security code having electromagnetic band-gap pattern 有权
标题翻译：用于识别具有电磁带隙图案的安全码的装置
公开(公告)号：US08146800B2
公开(公告)日：2012-04-03
申请号：US12794699
申请日：2010-06-04
申请人： Jong Won Yu , Hyeong Seok Jang , Won Gyu Lim , Won Seok Jeong , Jin Ho Ryu , Hyun Mi Kim
发明人： Jong Won Yu , Hyeong Seok Jang , Won Gyu Lim , Won Seok Jeong , Jin Ho Ryu , Hyun Mi Kim
IPC分类号： G06F17/00
CPC分类号： H01P1/2005 , G06K7/10009 , G06K19/0672
摘要： In an apparatus for recognizing a security code having an electromagnetic band gap (EBG) pattern which uses reflection and transmission characteristics of the EBG pattern, a voltage controlled oscillator generates a signal to a power divider, which divides the power of the signal into halves, and outputs a first signal through a waveguide to be incident on the EBG pattern. The waveguide receives a signal reflected from the EBG pattern and outputs the reflected signal to a phase detector. A circulator outputs the second signal to the phase detector, which detects the phase difference between the reflected signal and the second signal, and outputs phase difference data to a data control unit, which determines whether the security code having the EBG pattern is recognized using the phase difference data. In an alternate embodiment, the voltage control oscillator is controlled to sequentially generate signals using power difference data.
摘要翻译：在用于识别具有使用EBG图案的反射和传输特性的电磁带隙（EBG）模式的安全码的装置中，压控振荡器产生信号到功率分配器，功率分配器将信号的功率分成两半，并且通过波导输出要入射到EBG图案上的第一信号。波导接收从EBG图案反射的信号，并将反射信号输出到相位检测器。循环器将第二信号输出到检测反射信号和第二信号之间的相位差的相位检测器，并将相位差数据输出到数据控制单元，数据控制单元确定是否使用EBG图案识别具有EBG图案的安全码相位差数据。在替代实施例中，控制电压控制振荡器以使用功率差数据顺序产生信号。

4. 发明申请

US20100295633A1 ELECTROMAGNETIC BANDGAP PATTERN STRUCTURE, METHOD OF MANUFACTURING THE SAME, AND SECURITY PRODUCT USING THE SAME 有权
标题翻译：电磁带式图案结构及其制造方法及使用其的安全产品
公开(公告)号：US20100295633A1
公开(公告)日：2010-11-25
申请号：US12784356
申请日：2010-05-20
申请人： Jong Won YU , Won Gyu Lim , Hyeong Seok Jang , Dong Hoon Shin , Jin Ho Ryu , Hyun Mi Kim , Won Gyun Choe
发明人： Jong Won YU , Won Gyu Lim , Hyeong Seok Jang , Dong Hoon Shin , Jin Ho Ryu , Hyun Mi Kim , Won Gyun Choe
IPC分类号： H01P1/203 , G03F7/20 , B05D5/00
CPC分类号： H01Q17/00 , H01P1/2005 , H01P1/20381
摘要： Disclosed herein is an electromagnetic bandgap (EBG) pattern structure, including: a nonconductive substrate; and a pattern assembly formed on the substrate and including regularly arranged closed-loop patterns and open-loop patterns both of which are made of a conductive material. The EBG pattern structure is advantageous in that it can be used to manufacture new security products by applying its frequency characteristics to securities or IDs and in that it can be variously used in security technologies for preventing forgery and alteration because various security codes can be created by adjusting the variables of its EBG pattern.
摘要翻译：本文公开了一种电磁带隙（EBG）图案结构，包括：非导电基底; 以及形成在基板上并且包括由导电材料制成的规则排列的闭环图案和开环图案的图案组件。 EBG模式结构的优点在于，其可以用于通过将其频率特性应用于证券或ID来制造新的安全产品，并且其可以被多种用于防止伪造和变更的安全技术中，因为可以通过以下方式创建各种安全代码：调整其EBG模式的变量。

5. 发明申请

US20110108617A1 APPARATUS FOR RECOGNIZING SECURITY CODE HAVING ELECTROMAGNETIC BAND-GAP PATTERN 有权
标题翻译：用于识别具有电磁带隙图案的安全码的装置
公开(公告)号：US20110108617A1
公开(公告)日：2011-05-12
申请号：US12794699
申请日：2010-06-04
申请人： Jong Won Yu , Hyeong Seok Jang , Won Gyu Lim , Won Seok Jeong , Jin Ho Ryu , Hyun Mi Kim
发明人： Jong Won Yu , Hyeong Seok Jang , Won Gyu Lim , Won Seok Jeong , Jin Ho Ryu , Hyun Mi Kim
IPC分类号： G06F17/00
CPC分类号： H01P1/2005 , G06K7/10009 , G06K19/0672
摘要： In an apparatus for recognizing a security code having an electromagnetic band gap (EBG) pattern which uses reflection and transmission characteristics of the EBG pattern, a voltage controlled oscillator generates a signal to a power divider, which divides the power of the signal into halves, and outputs a first signal through a waveguide to be incident on the EBG pattern. The waveguide receives a signal reflected from the EBG pattern and outputs the reflected signal to a phase detector. A circulator outputs the second signal to the phase detector, which detects the phase difference between the reflected signal and the second signal, and outputs phase difference data to a data control unit, which determines whether the security code having the EBG pattern is recognized using the phase difference data. In an alternate embodiment, the voltage control oscillator is controlled to sequentially generate signals using power difference data.
摘要翻译：在用于识别具有使用EBG图案的反射和传输特性的电磁带隙（EBG）模式的安全码的装置中，压控振荡器产生信号到功率分配器，功率分配器将信号的功率分成两半，并且通过波导输出要入射到EBG图案上的第一信号。波导接收从EBG图案反射的信号，并将反射信号输出到相位检测器。循环器将第二信号输出到检测反射信号和第二信号之间的相位差的相位检测器，并将相位差数据输出到数据控制单元，数据控制单元确定是否使用EBG图案识别具有EBG图案的安全码相位差数据。在替代实施例中，控制电压控制振荡器以使用功率差数据顺序产生信号。

6. 发明授权

US07901848B2 Method of fabricating a photomask using self assembly molecule 失效
标题翻译：使用自组装分子制造光掩模的方法
公开(公告)号：US07901848B2
公开(公告)日：2011-03-08
申请号：US12345101
申请日：2008-12-29
申请人： Jin Ho Ryu
发明人： Jin Ho Ryu
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F1/68
摘要： A method of fabricating a photomask includes includes forming a light blocking layer over a transparent substrate, and forming a hard mask pattern over the light blocking layer. The hard mask pattern exposes a portion of the light blocking layer. The method also includes depositing a self assembly molecule (SAM) layer over the hard mask pattern. The SAM layer covers the hard mask pattern and a portion of the exposed light blocking layer. The method also includes forming a resist layer pattern over an exposed portion of the light blocking layer that is not covered by the deposited SAM layer. The method further includes removing the SAM layer to expose the hard mask pattern and the light blocking layer, and etching the light blocking layer with the hard mask pattern and the resist layer pattern to form the photomask. Still further, the method includes removing the hard mask pattern and the resist layer pattern. The disclosed method permits one to manufacture fine patterns in semiconductor devices utilizing conventional apparatus and materials.
摘要翻译：制造光掩模的方法包括在透明基板上形成遮光层，并在遮光层上形成硬掩模图案。硬掩模图案曝光遮光层的一部分。该方法还包括在硬掩模图案上沉积自组装分子（SAM）层。 SAM层覆盖硬掩模图案和暴露的遮光层的一部分。该方法还包括在未被沉积的SAM层覆盖的遮光层的暴露部分上形成抗蚀剂层图案。该方法还包括去除SAM层以暴露硬掩模图案和遮光层，并用硬掩模图案和抗蚀剂层图案蚀刻遮光层以形成光掩模。此外，该方法包括去除硬掩模图案和抗蚀剂层图案。所公开的方法允许使用常规设备和材料在半导体器件中制造精细图案。

7. 发明申请

US20090258303A1 Method of Fabricating a Photomask Using Self Assembly Molecule 失效
标题翻译：使用自组装分子制造光掩模的方法
公开(公告)号：US20090258303A1
公开(公告)日：2009-10-15
申请号：US12345101
申请日：2008-12-29
申请人： Jin Ho Ryu
发明人： Jin Ho Ryu
IPC分类号： G03F1/00
CPC分类号： G03F1/68
摘要： A method of fabricating a photomask includes includes forming a light blocking layer over a transparent substrate, and forming a hard mask pattern over the light blocking layer. The hard mask pattern exposes a portion of the light blocking layer. The method also includes depositing a self assembly molecule (SAM) layer over the hard mask pattern. The SAM layer covers the hard mask pattern and a portion of the exposed light blocking layer. The method also includes forming a resist layer pattern over an exposed portion of the light blocking layer that is not covered by the deposited SAM layer. The method further includes removing the SAM layer to expose the hard mask pattern and the light blocking layer, and etching the light blocking layer with the hard mask pattern and the resist layer pattern to form the photomask. Still further, the method includes removing the hard mask pattern and the resist layer pattern. The disclosed method permits one to manufacture fine patterns in semiconductor devices utilizing conventional apparatus and materials.
摘要翻译：制造光掩模的方法包括在透明基板上形成遮光层，并在遮光层上形成硬掩模图案。硬掩模图案曝光遮光层的一部分。该方法还包括在硬掩模图案上沉积自组装分子（SAM）层。 SAM层覆盖硬掩模图案和暴露的遮光层的一部分。该方法还包括在未被沉积的SAM层覆盖的遮光层的暴露部分上形成抗蚀剂层图案。该方法还包括去除SAM层以暴露硬掩模图案和遮光层，并用硬掩模图案和抗蚀剂层图案蚀刻遮光层以形成光掩模。此外，该方法包括去除硬掩模图案和抗蚀剂层图案。所公开的方法允许使用常规设备和材料在半导体器件中制造精细图案。

8. 发明授权

US08053148B2 Method for fabricating photomask 失效
标题翻译：光掩模的制造方法
公开(公告)号：US08053148B2
公开(公告)日：2011-11-08
申请号：US12346517
申请日：2008-12-30
申请人： Jin Ho Ryu
发明人： Jin Ho Ryu
IPC分类号： G03F1/00
CPC分类号： G03F1/68 , G03F1/80
摘要： Provided is a method for fabricating a photomask. A light blocking layer is formed on a transparent substrate having a first region and a second region. A hard mask layer is formed on the light blocking layer. A first polymer film is formed on the hard mask layer. Here, the first polymer film is formed of single strand polymers that can form a complementary binding. A portion of the first polymer film corresponding to the first region is changed to comprise polymers having partial complementary binding. A hard mask pattern for exposing a portion of the light blocking layer under the first polymer film is formed by performing an etching process using the changed portion as an etch stop. A light blocking pattern is formed by removing an exposed portion of the light blocking layer by performing an etching process using the hard mask pattern as an etch mask, and then removing the hard mask pattern.
摘要翻译：提供一种制造光掩模的方法。在具有第一区域和第二区域的透明基板上形成遮光层。在遮光层上形成硬掩模层。在硬掩模层上形成第一聚合物膜。这里，第一聚合物膜由可形成互补结合的单链聚合物形成。对应于第一区域的第一聚合物膜的一部分改变为包含具有部分互补结合的聚合物。通过使用改变部分作为蚀刻停止层进行蚀刻处理，形成用于暴露第一聚合物膜下面的遮光层的一部分的硬掩模图案。通过使用硬掩模图案作为蚀刻掩模进行蚀刻处理，然后去除硬掩模图案，通过去除遮光层的暴露部分来形成遮光图案。

9. 发明授权

US07838179B2 Method for fabricating photo mask 失效
标题翻译：光掩模制作方法
公开(公告)号：US07838179B2
公开(公告)日：2010-11-23
申请号：US11950567
申请日：2007-12-05
申请人： Jin Ho Ryu
发明人： Jin Ho Ryu
IPC分类号： G03F1/00
CPC分类号： G03F1/72 , G03F1/80
摘要： In a method for fabricating a photo mask, first resist patterns are formed on a transparent substrate where a light blocking layer and a phase shift layer are formed. Line widths of the first resist patterns are measured to define a region requiring a line width correction. Second resist patterns exposing the defined region are formed on the first resist patterns. The line width of the light blocking layer is corrected by over-etching the exposed light blocking layer to a predetermined thickness. The second resist patterns are removed. Phase shift patterns and light blocking patterns are formed using the first resist patterns as an etch mask. Then, the first resist patterns are removed.
摘要翻译：在制造光掩模的方法中，在形成有阻光层和相移层的透明基板上形成第一抗蚀剂图案。测量第一抗蚀剂图案的线宽度以限定需要线宽校正的区域。在第一抗蚀剂图案上形成暴露限定区域的第二抗蚀剂图案。通过将暴露的遮光层过蚀刻到预定厚度来校正遮光层的线宽。去除第二抗蚀剂图案。使用第一抗蚀剂图案作为蚀刻掩模形成相移图案和遮光图案。然后，去除第一抗蚀剂图案。

10. 发明申请

US20080280214A1 Method for Fabricating Photo Mask 失效
标题翻译：制作照片面具的方法
公开(公告)号：US20080280214A1
公开(公告)日：2008-11-13
申请号：US11950567
申请日：2007-12-05
申请人： Jin Ho Ryu
发明人： Jin Ho Ryu
IPC分类号： G03F1/00
CPC分类号： G03F1/72 , G03F1/80
摘要： In a method for fabricating a photo mask, first resist patterns are formed on a transparent substrate where a light blocking layer and a phase shift layer are formed. Line widths of the first resist patterns are measured to define a region requiring a line width correction. Second resist patterns exposing the defined region are formed on the first resist patterns. The line width of the light blocking layer is corrected by over-etching the exposed light blocking layer to a predetermined thickness. The second resist patterns are removed. Phase shift patterns and light blocking patterns are formed using the first resist patterns as an etch mask. Then, the first resist patterns are removed.
摘要翻译：在制造光掩模的方法中，在形成有阻光层和相移层的透明基板上形成第一抗蚀剂图案。测量第一抗蚀剂图案的线宽度以限定需要线宽校正的区域。在第一抗蚀剂图案上形成暴露限定区域的第二抗蚀剂图案。通过将暴露的遮光层过蚀刻到预定厚度来校正遮光层的线宽。去除第二抗蚀剂图案。使用第一抗蚀剂图案作为蚀刻掩模形成相移图案和遮光图案。然后，去除第一抗蚀剂图案。

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