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1. 发明申请

US20130052569A1 EXPOSURE APPARATUS FOR FORMING A RETICLE AND METHOD OF FORMING A RETICLE USING THE SAME 有权
标题翻译：用于形成本发明的曝光装置和使用该反应物的方法
公开(公告)号：US20130052569A1
公开(公告)日：2013-02-28
申请号：US13564196
申请日：2012-08-01
申请人： Jin CHOI , Jin-Ha Jeong , Urazaev Vladimir , Hea-Yun Lee
发明人： Jin CHOI , Jin-Ha Jeong , Urazaev Vladimir , Hea-Yun Lee
IPC分类号： G03F1/78 , G03B27/42
CPC分类号： H01J37/06 , B82Y10/00 , B82Y40/00 , G03F1/20 , G03F1/78 , G03F7/2063 , H01J37/3026 , H01J37/3174 , H01J2237/0458 , H01J2237/31764 , H01J2237/31776 , Y10S430/143
摘要： A method including loading a blank reticle; projecting an electron beam; moving a second aperture plate having a first and second pattern aperture so the first pattern aperture is overlapped by a first aperture of a first aperture plate, the electron beam passing through the first pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam that passes the first pattern aperture to form a first exposure pattern; moving the second aperture plate so the second pattern aperture is overlapped by the first aperture of the first aperture plate, the electron beam passing through the second pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam after passing the second pattern aperture, to form a second exposure pattern; and developing the blank reticle having the first and second exposure patterns to form the reticle having first and second patterns.
摘要翻译：一种包括加载空白掩模版的方法; 投射电子束; 移动具有第一和第二图案孔的第二孔板，使得第一图案孔与第一孔板的第一孔重叠，电子束在通过第一孔之后通过第一图案孔; 用通过第一图案孔的电子束曝光空白掩模版以形成第一曝光图案; 移动第二孔板，使得第二图案孔与第一孔板的第一孔重叠，电子束在通过第一孔之后通过第二图案孔; 在通过第二图案孔之后，用电子束曝光空白掩模版，形成第二曝光图案; 并且显影具有第一和第二曝光图案的空白掩模版，以形成具有第一和第二图案的掩模版。

2. 发明授权

US08609305B2 Methods of forming a photolithography reticle 有权
标题翻译：形成光刻掩模版的方法
公开(公告)号：US08609305B2
公开(公告)日：2013-12-17
申请号：US13443440
申请日：2012-04-10
申请人： Jin Choi , Jin-Ha Jeong , Urazaev Vladimir , Hea-Yun Lee
发明人： Jin Choi , Jin-Ha Jeong , Urazaev Vladimir , Hea-Yun Lee
IPC分类号： G03F1/78 , G03F1/80
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/78 , G03F1/80 , H01J37/3026 , H01J2237/0455 , H01J2237/31764 , H01J2237/31776
摘要： In a method of forming a reticle and electron beam exposure system, first electron beams are irradiated onto a first region of a blank reticle having a light shielding layer and a photosensitive layer, to form first shot patterns. Second electron beams having a cross-sectional area larger than the first electron beams are irradiated onto a second region of the blank reticle. The photosensitive layer is developed to form first and second mask patterns at the first and second regions, respectively. The light shielding layer is etched off using the first and second mask patterns as an etching mask, thereby forming the mother pattern including a first pattern in the first region and a second pattern in the second region. Accordingly, the enlargement of the second electron beams reduces the scan time for the blank reticle, thereby reducing the process time.
摘要翻译：在形成掩模版和电子束曝光系统的方法中，将第一电子束照射到具有遮光层和感光层的坯料掩模版的第一区域上，以形成第一射出图案。具有大于第一电子束的横截面面积的第二电子束被照射到坯料掩模版的第二区域上。感光层被显影以分别在第一和第二区域形成第一和第二掩模图案。使用第一和第二掩模图案作为蚀刻掩模蚀刻掉遮光层，从而形成包括第一区域中的第一图案和第二区域中的第二图案的母体图案。因此，第二电子束的放大减少了空白掩模版的扫描时间，从而缩短了处理时间。

3. 发明申请

US20120288787A1 Beam Exposure Systems and Methods of Forming a Reticle Using the Same 有权
标题翻译：光束曝光系统及其使用方法
公开(公告)号：US20120288787A1
公开(公告)日：2012-11-15
申请号：US13443440
申请日：2012-04-10
申请人： Jin Choi , Jin-Ha Jeong , Urazaev Vladimir , Hea-Yun Lee
发明人： Jin Choi , Jin-Ha Jeong , Urazaev Vladimir , Hea-Yun Lee
IPC分类号： G03F1/78 , G21K5/04
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/78 , G03F1/80 , H01J37/3026 , H01J2237/0455 , H01J2237/31764 , H01J2237/31776
摘要： In a method of forming a reticle and electron beam exposure system, first electron beams are irradiated onto a first region of a blank reticle having a light shielding layer and a photosensitive layer, to form first shot patterns. Second electron beams having a cross-sectional area larger than the first electron beams are irradiated onto a second region of the blank reticle. The photosensitive layer is developed to form first and second mask patterns at the first and second regions, respectively. The light shielding layer is etched off using the first and second mask patterns as an etching mask, thereby forming the mother pattern including a first pattern in the first region and a second pattern in the second region. Accordingly, the enlargement of the second electron beams reduces the scan time for the blank reticle, thereby reducing the process time.
摘要翻译：在形成掩模版和电子束曝光系统的方法中，将第一电子束照射到具有遮光层和感光层的坯料掩模版的第一区域上，以形成第一射出图案。具有大于第一电子束的横截面面积的第二电子束被照射到坯料掩模版的第二区域上。感光层被显影以分别在第一和第二区域形成第一和第二掩模图案。使用第一和第二掩模图案作为蚀刻掩模蚀刻掉遮光层，从而形成包括第一区域中的第一图案和第二区域中的第二图案的母体图案。因此，第二电子束的放大减少了空白掩模版的扫描时间，从而缩短了处理时间。

4. 发明授权

US08697317B2 Exposure apparatus for forming a reticle and method of forming a reticle using the same 有权
标题翻译：用于形成掩模版的曝光装置和使用其形成掩模版的方法
公开(公告)号：US08697317B2
公开(公告)日：2014-04-15
申请号：US13564196
申请日：2012-08-01
申请人： Jin Choi , Jin-Ha Jeong , Urazaev Vladimir , Hea-Yun Lee
发明人： Jin Choi , Jin-Ha Jeong , Urazaev Vladimir , Hea-Yun Lee
IPC分类号： G03F1/20
CPC分类号： H01J37/06 , B82Y10/00 , B82Y40/00 , G03F1/20 , G03F1/78 , G03F7/2063 , H01J37/3026 , H01J37/3174 , H01J2237/0458 , H01J2237/31764 , H01J2237/31776 , Y10S430/143
摘要： A method including loading a blank reticle; projecting an electron beam; moving a second aperture plate having a first and second pattern aperture so the first pattern aperture is overlapped by a first aperture of a first aperture plate, the electron beam passing through the first pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam that passes the first pattern aperture to form a first exposure pattern; moving the second aperture plate so the second pattern aperture is overlapped by the first aperture of the first aperture plate, the electron beam passing through the second pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam after passing the second pattern aperture, to form a second exposure pattern; and developing the blank reticle having the first and second exposure patterns to form the reticle having first and second patterns.
摘要翻译：一种包括加载空白掩模版的方法; 投射电子束; 移动具有第一和第二图案孔的第二孔板，使得第一图案孔与第一孔板的第一孔重叠，电子束在通过第一孔之后通过第一图案孔; 用通过第一图案孔的电子束曝光空白掩模版以形成第一曝光图案; 移动第二孔板，使得第二图案孔与第一孔板的第一孔重叠，电子束在通过第一孔之后通过第二图案孔; 在通过第二图案孔之后，用电子束曝光空白掩模版，形成第二曝光图案; 并且显影具有第一和第二曝光图案的空白掩模版，以形成具有第一和第二图案的掩模版。

5. 发明授权

US08563951B2 Exposure systems for integrated circuit fabrication 有权
标题翻译：用于集成电路制造的曝光系统
公开(公告)号：US08563951B2
公开(公告)日：2013-10-22
申请号：US13419761
申请日：2012-03-14
申请人： Jin Choi , Jin-Ha Jeong , Vladimir Urazaev , Hea-Yun Lee
发明人： Jin Choi , Jin-Ha Jeong , Vladimir Urazaev , Hea-Yun Lee
IPC分类号： G21K5/04
CPC分类号： G03F1/78 , B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/3026 , H01J37/3174 , H01J2237/0455 , H01J2237/30472 , H01J2237/31776
摘要： Exposure systems include a beam generator, which is configured to irradiate source beams in a direction of an object to be exposed by the source beams, along with first and second beam shapers. The first beam shaper, which is disposed proximate the beam generator, has a first aperture therein positioned to pass through the source beams received from the beam generator. The second beam shaper is disposed proximate the first beam shaper. The second beam shaper includes a plate having a second aperture therein, which is positioned to receive the source beams that are passed through the first aperture of the first beam shaper. The second beam shaper further includes a first actuator and a first shift screen mechanically coupled to the first actuator.
摘要翻译：曝光系统包括光束发生器，其被配置成沿着第一和第二光束整形器照射源光束的待曝光物体的方向上的光源射束。设置在光束发生器附近的第一光束整形器具有其中定位成穿过从光束发生器接收的源光束的第一孔。第二光束整形器靠近第一光束整形器设置。第二光束整形器包括其中具有第二孔的板，其被定位成接收穿过第一光束整形器的第一孔的源光束。第二光束整形器还包括机械耦合到第一致动器的第一致动器和第一移位屏幕。

6. 发明申请

US20120292535A1 EXPOSURE SYSTEMS FOR INTEGRATED CIRCUIT FABRICATION 有权
标题翻译：集成电路制造的接触系统
公开(公告)号：US20120292535A1
公开(公告)日：2012-11-22
申请号：US13419761
申请日：2012-03-14
申请人： Jin Choi , Jin-Ha Jeong , Vladimir Urazaev , Hea-Yun Lee
发明人： Jin Choi , Jin-Ha Jeong , Vladimir Urazaev , Hea-Yun Lee
IPC分类号： G21K5/04
CPC分类号： G03F1/78 , B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/3026 , H01J37/3174 , H01J2237/0455 , H01J2237/30472 , H01J2237/31776
摘要： Exposure systems include a beam generator, which is configured to irradiate source beams in a direction of an object to be exposed by the source beams, along with first and second beam shapers. The first beam shaper, which is disposed proximate the beam generator, has a first aperture therein positioned to pass through the source beams received from the beam generator. The second beam shaper is disposed proximate the first beam shaper. The second beam shaper includes a plate having a second aperture therein, which is positioned to receive the source beams that are passed through the first aperture of the first beam shaper. The second beam shaper further includes a first actuator and a first shift screen mechanically coupled to the first actuator.
摘要翻译：曝光系统包括光束发生器，其被配置成沿着第一和第二光束整形器照射源光束的待曝光物体的方向上的光源射束。设置在光束发生器附近的第一光束整形器具有其中定位成穿过从光束发生器接收的源光束的第一孔。第二光束整形器靠近第一光束整形器设置。第二光束整形器包括其中具有第二孔的板，其被定位成接收穿过第一光束整形器的第一孔的源光束。第二光束整形器还包括机械耦合到第一致动器的第一致动器和第一移位屏幕。

7. 发明授权

US08187914B2 Methods of forming a phase change memory device 有权
标题翻译：形成相变存储器件的方法
公开(公告)号：US08187914B2
公开(公告)日：2012-05-29
申请号：US12731637
申请日：2010-03-25
申请人： Jin-Il Lee , Urazaev Vladimir , Jin-Ha Jeong , Seung-Back Shin , Sung-Lae Cho , Hyeong-Geun An , Dong-Hyun Im , Young-Lim Park , Jung-Hyeon Kim
发明人： Jin-Il Lee , Urazaev Vladimir , Jin-Ha Jeong , Seung-Back Shin , Sung-Lae Cho , Hyeong-Geun An , Dong-Hyun Im , Young-Lim Park , Jung-Hyeon Kim
IPC分类号： H01L21/20
CPC分类号： H01L45/1616 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Provided are methods of forming a phase change memory device. A semiconductor device having a lower electrode and an interlayer insulating layer may be prepared. The lower electrode may be surrounded by the interlayer insulating layer. Source gases, a reaction gas and a purge gas may be injected into a process chamber of a semiconductor fabrication device to form a phase change material layer on a semiconductor substrate. The source gases may be simultaneously injected into the process chamber. The phase change material layer may be in contact with the lower electrode through the interlayer insulating layer. The phase change material layer may be etched to form a phase change memory cell in the interlayer insulating layer. An upper electrode may be formed on the phase change memory cell.
摘要翻译：提供形成相变存储器件的方法。可以制备具有下电极和层间绝缘层的半导体器件。下电极可以被层间绝缘层包围。可以将源气体，反应气体和吹扫气体注入到半导体制造装置的处理室中，以在半导体衬底上形成相变材料层。源气体可以同时注入到处理室中。相变材料层可以通过层间绝缘层与下电极接触。可以蚀刻相变材料层以在层间绝缘层中形成相变存储单元。可以在相变存储单元上形成上电极。

8. 发明申请

US20100248460A1 Method of forming information storage pattern 审中-公开
标题翻译：形成信息存储模式的方法
公开(公告)号：US20100248460A1
公开(公告)日：2010-09-30
申请号：US12659959
申请日：2010-03-26
申请人： Jin-Il Lee , Urazaev Vladimir , Jin-Ha Jeong , Seung-Back Shin , Sung-Lae Cho , Hyeong-Geun An , Dong-Hyun Im , Jung-Hyeon Kim
发明人： Jin-Il Lee , Urazaev Vladimir , Jin-Ha Jeong , Seung-Back Shin , Sung-Lae Cho , Hyeong-Geun An , Dong-Hyun Im , Jung-Hyeon Kim
IPC分类号： H01L21/365 , H01L21/469 , H01L21/443 , H01L21/465
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616 , H01L45/1683
摘要： A method of forming an information storage pattern, includes placing a semiconductor substrate in a process chamber, injecting first, second and third process gases into the process chamber during a first process to form a lower layer on the substrate based on a first injection time and/or a first pause time, injecting the second process gas into the process chamber during a second process, wherein the second process gas is injected into the process chamber during a first elimination time, injecting a fourth process gas together with the second and third process gases into the process chamber during a third process in accordance with a second injection time and/or a second pause time to form an upper layer on the lower layer, and injecting the second process gas into the process chamber during a fourth process, wherein the second process gas is injected into the process chamber during a second elimination.
摘要翻译：一种形成信息存储图案的方法，包括将半导体衬底放置在处理室中，在第一过程中将第一，第二和第三处理气体注入到处理室中，以在第一注入时间基底上形成下层;以及 /或第一暂停时间，在第二过程期间将第二处理气体注入处理室，其中第二处理气体在第一消除时间期间被注入到处理室中，与第二和第三处理一起喷射第四处理气体根据第二喷射时间和/或第二暂停时间，在第三过程期间将气体进入处理室，以在下层形成上层，并且在第四过程期间将第二处理气体注入到处理室中，其中，在第二次消除期间将第二工艺气体注入到处理室中。

9. 发明申请

US20100248442A1 METHODS OF FORMING A PHASE CHANGE MEMORY DEVICE 有权
标题翻译：形成相变存储器件的方法
公开(公告)号：US20100248442A1
公开(公告)日：2010-09-30
申请号：US12731637
申请日：2010-03-25
申请人： Jin-Il Lee , Urazaev Vladimir , Jin-Ha Jeong , Seung-Back Shin , Sung-Lae Cho , Hyeong-Geun An , Dong-Hyun Im , Young-Lim Park , Jung-Hyeon Kim
发明人： Jin-Il Lee , Urazaev Vladimir , Jin-Ha Jeong , Seung-Back Shin , Sung-Lae Cho , Hyeong-Geun An , Dong-Hyun Im , Young-Lim Park , Jung-Hyeon Kim
IPC分类号： H01L21/02
CPC分类号： H01L45/1616 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Provided are methods of forming a phase change memory device. A semiconductor device having a lower electrode and an interlayer insulating layer may be prepared. The lower electrode may be surrounded by the interlayer insulating layer. Source gases, a reaction gas and a purge gas may be injected into a process chamber of a semiconductor fabrication device to form a phase change material layer on a semiconductor substrate. The source gases may be simultaneously injected into the process chamber. The phase change material layer may be in contact with the lower electrode through the interlayer insulating layer. The phase change material layer may be etched to form a phase change memory cell in the interlayer insulating layer. An upper electrode may be formed on the phase change memory cell.
摘要翻译：提供形成相变存储器件的方法。可以制备具有下电极和层间绝缘层的半导体器件。下电极可以被层间绝缘层包围。可以将源气体，反应气体和吹扫气体注入到半导体制造装置的处理室中，以在半导体衬底上形成相变材料层。源气体可以同时注入到处理室中。相变材料层可以通过层间绝缘层与下电极接触。可以蚀刻相变材料层以在层间绝缘层中形成相变存储单元。可以在相变存储单元上形成上电极。

10. 发明授权

US08587096B2 Semiconductor device including shielding layer and fabrication method thereof 有权
标题翻译：包括屏蔽层的半导体器件及其制造方法
公开(公告)号：US08587096B2
公开(公告)日：2013-11-19
申请号：US13172174
申请日：2011-06-29
申请人： Yong-hoon Kim , Hee-seok Lee , Jin-Ha Jeong , Ji-hyun Lee
发明人： Yong-hoon Kim , Hee-seok Lee , Jin-Ha Jeong , Ji-hyun Lee
IPC分类号： H01L23/552
CPC分类号： H01L23/552 , H01L21/561 , H01L23/3128 , H01L23/481 , H01L24/48 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L25/16 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/48227 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06537 , H01L2225/06541 , H01L2225/06565 , H01L2225/06568 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3025 , H05K1/0233 , H01L2224/81 , H01L2924/00 , H01L2224/0401 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Example embodiments relate to a semiconductor device. The semiconductor device may include a first semiconductor chip including a semiconductor substrate, a first through via that penetrates the semiconductor substrate, a second semiconductor chip stacked on one plane of the first semiconductor chip, and a shielding layer covering at least one portion of the first and/or second semiconductor chip and electrically connected to the first through via.
摘要翻译：示例实施例涉及半导体器件。半导体器件可以包括第一半导体芯片，其包括半导体衬底，穿透半导体衬底的第一通孔，堆叠在第一半导体芯片的一个平面上的第二半导体芯片，以及覆盖第一半导体衬底的至少一部分的屏蔽层和/或第二半导体芯片，并且电连接到第一通孔。

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