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    • 3. 发明申请
    • PATTERN FORMING METHOD
    • 图案形成方法
    • US20120148959A1
    • 2012-06-14
    • US13399090
    • 2012-02-17
    • Jin CHOIByung-Gook KimHee-Bom KimSang-Hee Lee
    • Jin CHOIByung-Gook KimHee-Bom KimSang-Hee Lee
    • G03F7/22G03F7/20
    • H01J37/3026B82Y10/00B82Y40/00H01J37/3174H01J2237/31776
    • A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture.
    • 图案形成方法包括:提供具有第一孔的第一掩模,通过照射通过第一孔的第一电子束,在抗蚀剂上形成第一转印图案,第一转印图案沿着第一方向延伸并沿着其圆周具有边界 并且所述第一电子束在从所述第一孔出射时具有第一正方形的横截面,并且通过照射通过所述第一孔的第二电子束在所述抗蚀剂上形成第二转移图案,所述第二转移图案沿所述第一方向延伸 并且当从第一孔径出现时,与第一转印图案的边界的一部分重叠,并且第二电子束具有第二正方形的横截面。
    • 5. 发明授权
    • Pattern forming method
    • 图案形成方法
    • US08329381B2
    • 2012-12-11
    • US13399090
    • 2012-02-17
    • Jin ChoiByung-Gook KimHee-Bom KimSang-Hee Lee
    • Jin ChoiByung-Gook KimHee-Bom KimSang-Hee Lee
    • G03C5/00
    • H01J37/3026B82Y10/00B82Y40/00H01J37/3174H01J2237/31776
    • A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture.
    • 图案形成方法包括:提供具有第一孔的第一掩模,通过照射通过第一孔的第一电子束,在抗蚀剂上形成第一转印图案,第一转印图案沿着第一方向延伸并沿着其圆周具有边界 并且所述第一电子束在从所述第一孔出射时具有第一正方形的横截面,并且通过照射通过所述第一孔的第二电子束在所述抗蚀剂上形成第二转移图案,所述第二转移图案沿所述第一方向延伸 并且当从第一孔径出现时,与第一转印图案的边界的一部分重叠,并且第二电子束具有第二正方形的横截面。