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1. 发明授权

US08093630B2 Semiconductor device and lateral diffused metal-oxide-semiconductor transistor 有权
标题翻译：半导体器件和横向扩散金属氧化物半导体晶体管
公开(公告)号：US08093630B2
公开(公告)日：2012-01-10
申请号：US12477054
申请日：2009-06-02
申请人： Jimmy Lin , Shang-Hui Tu , Ming-Horng Hsiao
发明人： Jimmy Lin , Shang-Hui Tu , Ming-Horng Hsiao
IPC分类号： H01L27/088
CPC分类号： H01L29/7393 , H01L27/0262 , H01L29/0696 , H01L29/7436 , H01L29/87
摘要： The invention provides a semiconductor device and a lateral diffused metal-oxide-semiconductor transistor. The semiconductor device includes a substrate having a first conductive type. A gate is disposed on the substrate. A source doped region is formed in the substrate, neighboring with a first side of the gate, wherein the source doped region has a second conductive type different from the first conductive type. A drain doped region is formed in the substrate, neighboring with a second side opposite to the first side of the gate. The drain doped region is constructed by a plurality of first doped regions with the first conductive type and a plurality of second doped regions with the second conductive type, wherein the first doped regions and the second doped regions are alternatively arranged.
摘要翻译：本发明提供一种半导体器件和横向漫射金属氧化物半导体晶体管。半导体器件包括具有第一导电类型的衬底。栅极设置在基板上。源极掺杂区域形成在与栅极的第一侧相邻的衬底中，其中源极掺杂区域具有不同于第一导电类型的第二导电类型。漏极掺杂区域形成在衬底中，与栅极的第一侧相对的第二侧相邻。漏极掺杂区域由具有第一导电类型的多个第一掺杂区域和具有第二导电类型的多个第二掺杂区域构成，其中交替布置第一掺杂区域和第二掺杂区域。

2. 发明申请

US20100301388A1 SEMICONDUCTOR DEVICE AND LATERAL DIFFUSED METAL-OXIDE-SEMICONDUCTOR TRANSISTOR 有权
标题翻译：半导体器件和侧向扩散金属氧化物半导体晶体管
公开(公告)号：US20100301388A1
公开(公告)日：2010-12-02
申请号：US12477054
申请日：2009-06-02
申请人： Jimmy Lin , Shang-Hui Tu , Ming-Horng Hsiao
发明人： Jimmy Lin , Shang-Hui Tu , Ming-Horng Hsiao
IPC分类号： H01L29/73 , H01L27/06
CPC分类号： H01L29/7393 , H01L27/0262 , H01L29/0696 , H01L29/7436 , H01L29/87
摘要： The invention provides a semiconductor device and a lateral diffused metal-oxide-semiconductor transistor. The semiconductor device includes a substrate having a first conductive type. A gate is disposed on the substrate. A source doped region is formed in the substrate, neighboring with a first side of the gate, wherein the source doped region has a second conductive type different from the first conductive type. A drain doped region is formed in the substrate, neighboring with a second side opposite to the first side of the gate. The drain doped region is constructed by a plurality of first doped regions with the first conductive type and a plurality of second doped regions with the second conductive type, wherein the first doped regions and the second doped regions are alternatively arranged.
摘要翻译：本发明提供一种半导体器件和横向漫射金属氧化物半导体晶体管。半导体器件包括具有第一导电类型的衬底。栅极设置在基板上。源极掺杂区域形成在与栅极的第一侧相邻的衬底中，其中源极掺杂区域具有不同于第一导电类型的第二导电类型。漏极掺杂区域形成在衬底中，与栅极的第一侧相对的第二侧相邻。漏极掺杂区域由具有第一导电类型的多个第一掺杂区域和具有第二导电类型的多个第二掺杂区域构成，其中交替布置第一掺杂区域和第二掺杂区域。

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