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1. 发明申请

US20150143677A1 SEMICONDUCTOR PROCESSING APPARATUS WITH A CERAMIC-COMPRISING SURFACE WHICH EXHIBITS FRACTURE TOUGHNESS AND HALOGEN PLASMA RESISTANCE 审中-公开
标题翻译：具有陶瓷包覆表面的半导体加工装置，其表面具有断裂韧性和抗氢化物等离子体电阻
公开(公告)号：US20150143677A1
公开(公告)日：2015-05-28
申请号：US13998723
申请日：2013-11-26
申请人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
发明人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
IPC分类号： H01L21/67
CPC分类号： H01L21/67011 , C04B35/486 , C04B35/505 , C04B2235/3217 , C04B2235/3225 , C04B2235/3244 , C04B2235/77 , C04B2235/785 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , C04B2235/9669 , Y10T29/41
摘要： A solid solution-comprising ceramic article useful in semiconductor processing, which article may be in the form of a solid, bulk ceramic, or may be in the form of a substrate having a ceramic coating of the same composition as the bulk ceramic material on at least one outer surface. The ceramic article is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The ceramic-comprising article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 91 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 9 mole %.
摘要翻译：一种可用于半导体加工的固体溶液陶瓷制品，该制品可以是固体，本体陶瓷的形式，或者可以是具有与在其上的块状陶瓷材料相同组成的陶瓷涂层的基材形式至少一个外表面。陶瓷制品耐受含卤素等离子体侵蚀，并提供有利的机械性能。含固溶体的陶瓷制品由氧化钇和氧化锆的组合形成。包含陶瓷的制品包括由摩尔浓度为约96摩尔％至约91摩尔％的氧化锆形成的陶瓷和摩尔浓度为约4摩尔％至约9摩尔％的氧化钇。

2. 发明授权

US08532725B2 Parallel connected HTS utility device and method of using same 有权
标题翻译：并联HTS实用设备及其使用方法
公开(公告)号：US08532725B2
公开(公告)日：2013-09-10
申请号：US12692793
申请日：2010-01-25
申请人： Douglas C. Folts , James Maguire , Jie Yuan , Alexis P. Malozemoff
发明人： Douglas C. Folts , James Maguire , Jie Yuan , Alexis P. Malozemoff
IPC分类号： H01B12/00 , H02H9/00
CPC分类号： H01B12/02 , H01B12/16 , H01L39/16 , H02H7/001 , H02H9/023 , Y02E40/641 , Y02E40/647 , Y02E40/68 , Y02E40/69
摘要： A method of controlling fault currents within a utility power grid is provided. The method may include coupling a superconducting electrical path between a first and a second node within the utility power grid and coupling a non-superconducting electrical path between the first and second nodes within the utility power grid. The superconducting electrical path and the non-superconducting electrical path may be electrically connected in parallel. The superconducting electrical path may have a lower series impedance, when operated below a critical current level, than the non-superconducting electrical path. The superconducting electrical path may have a higher series impedance, when operated at or above the critical current level, than the non-superconductor electrical path.
摘要翻译：提供一种控制公用电网内的故障电流的方法。该方法可以包括在公用电力网内的第一和第二节点之间耦合超导电路径，并且在公用电力网格内的第一和第二节点之间耦合非超导电路径。超导电路和非超导电路可以并联电连接。当低于临界电流水平时，超导电路可以具有比非超导电路径更低的串联阻抗。当超过等于或高于临界电流水平时，超导电路可能具有比非超导电路更高的串联阻抗。

3. 发明申请

US20130224498A1 Semiconductor processing apparatus comprising a solid solution ceramic formed from yttrium oxide, zirconium oxide, and aluminum oxide 有权
公开(公告)号：US20130224498A1
公开(公告)日：2013-08-29
申请号：US13986040
申请日：2013-03-25
申请人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
发明人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
IPC分类号： C04B35/505
CPC分类号： C04B35/505 , B32B18/00 , C04B35/486 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3229 , C04B2235/3244 , C04B2235/6582 , C04B2235/668 , C04B2235/762 , C04B2235/80 , C04B2235/9669 , H01J37/32467 , H01J37/32504 , Y10T428/31678
摘要： A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide, zirconium oxide, and aluminum oxide. In a first embodiment, the solid solution-comprising ceramic article is a solid, sintered body of the solid solution ceramic material. In a second embodiment, the solid solution-comprising article comprises a substrate underlying a solid solution-comprising coating.

4. 发明授权

US08264827B2 Liquid crystal display having fastening device 有权
标题翻译：具有紧固装置的液晶显示器
公开(公告)号：US08264827B2
公开(公告)日：2012-09-11
申请号：US12468227
申请日：2009-05-19
申请人： Jie Yuan , Gong-Yi Dai
发明人： Jie Yuan , Gong-Yi Dai
IPC分类号： H05K5/00
CPC分类号： F16B5/0664 , F16B5/0642 , G06F1/1605
摘要： A fastening device is provided for fastening at least one article on a carrier. The fastening device includes at least one positioning component, a fixed plate fixed on the carrier, and a pressing plate positioned on the fixed plate by the positioning component. The pressing plate has at least one positioned portion and a retaining plate corresponding to the fixed plate. The retaining plate abuts against a side edge of the article for preventing the article from moving along a first direction. The positioning component movably passes through the positioned portion to allow the pressing plate to selectively move along the first direction and be positioned on the fixed plate for adjusting the distance between the retaining plate and the fixed plate.
摘要翻译：提供紧固装置用于将至少一个物品紧固在载体上。紧固装置包括至少一个定位部件，固定在载体上的固定板和通过定位部件定位在固定板上的按压板。压板具有至少一个定位部分和与固定板对应的保持板。保持板抵靠物品的侧边缘，以防止物品沿着第一方向移动。定位组件可移动地穿过定位部分，以允许按压板沿着第一方向选择性地移动，并且定位在固定板上，用于调整保持板和固定板之间的距离。

5. 发明授权

US08044752B2 High-current, compact flexible conductors containing high temperature superconducting tapes 有权
标题翻译：包含高温超导磁带的大电流，紧凑的柔性导体
公开(公告)号：US08044752B2
公开(公告)日：2011-10-25
申请号：US11880567
申请日：2007-07-23
申请人： Alexander Otto , Ralph P. Mason , James F. Maguire , Jie Yuan
发明人： Alexander Otto , Ralph P. Mason , James F. Maguire , Jie Yuan
IPC分类号： H01F6/00
CPC分类号： H01B12/06 , B63G9/06 , H01F6/06 , H01F13/006 , Y10S505/705 , Y10S505/879 , Y10S505/884 , Y10S505/885 , Y10S505/886 , Y10S505/887
摘要： High-current, compact, flexible conductors containing high temperature superconducting (HTS) tapes and methods for making the same are described. The HTS tapes are arranged into a stack, a plurality of stacks are arranged to form a superstructure, and the superstructure is twisted about the cable axis to obtain a HTS cable. The HTS cables of the invention can be utilized in numerous applications such as cables employed to generate magnetic fields for degaussing and high current electric power transmission or distribution applications.
摘要翻译：描述了包含高温超导（HTS）带的大电流，紧凑，柔性导体及其制造方法。 HTS带布置成堆叠，多个堆叠被布置成形成上部结构，并且上部结构围绕电缆轴线扭绞以获得HTS电缆。本发明的HTS电缆可用于许多应用中，例如用于产生用于消磁的磁场的电缆和大电流电力传输或分配应用。

6. 发明授权

US07718559B2 Erosion resistance enhanced quartz used in plasma etch chamber 有权
标题翻译：用于等离子体蚀刻室的耐腐蚀性增强的石英
公开(公告)号：US07718559B2
公开(公告)日：2010-05-18
申请号：US11738030
申请日：2007-04-20
申请人： Jie Yuan , Jennifer Y. Sun , Renguan Duan
发明人： Jie Yuan , Jennifer Y. Sun , Renguan Duan
IPC分类号： C03C3/06 , C03C3/04
CPC分类号： C03C3/06 , C03B32/00 , C03B2201/24 , C03B2201/34 , C03B2201/36 , C03C2201/3411 , C03C2201/36 , C03C2203/54 , H01L21/67069 , H01L21/68721 , H01L21/68735 , H01L21/68757 , Y02P40/57 , Y10S156/915
摘要： A method of fabricating doped quartz component is provided herein. In one embodiment, the doped quartz component is a yttrium doped quartz ring configured to support a substrate. In another embodiment, the doped quartz component is a yttrium and aluminum doped cover ring. In yet another embodiment, the doped quartz component is a yttrium, aluminum and nitrogen containing cover ring.
摘要翻译：本文提供了一种制造掺杂石英组分的方法。在一个实施例中，掺杂的石英组件是被配置为支撑衬底的掺钇的石英环。在另一个实施例中，掺杂的石英组件是掺钇和铝的覆盖环。在另一个实施方案中，掺杂的石英组分是含钇，铝和氮的覆盖环。

7. 发明申请

US20080264564A1 Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas 审中-公开
标题翻译：降低暴露于含卤素等离子体的半导体处理装置的侵蚀速度的方法
公开(公告)号：US20080264564A1
公开(公告)日：2008-10-30
申请号：US11796210
申请日：2007-04-27
申请人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
发明人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
IPC分类号： C04B35/48 , H01L21/3065
CPC分类号： C04B35/505 , B32B18/00 , C04B35/486 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3229 , C04B2235/3244 , C04B2235/6582 , C04B2235/668 , C04B2235/762 , C04B2235/80 , C04B2235/9669 , H01J37/32467 , H01J37/32504 , Y10T428/31678
摘要： A ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.
摘要翻译：用于半导体加工的陶瓷制品，其耐受含卤素等离子体的侵蚀。陶瓷制品由氧化钇和氧化锆的组合形成。在第一个实施方案中，陶瓷制品包括由摩尔浓度为约90摩尔％至约70摩尔％的氧化钇形成的陶瓷，摩尔浓度为约10摩尔％至约30摩尔％的氧化锆，。在第二个实施方案中，陶瓷制品包括由摩尔浓度为约96摩尔％至约94摩尔％的氧化锆形成的陶瓷，摩尔浓度为约4摩尔％至约6摩尔％的氧化钇。

8. 发明申请

US20080180202A1 High-current, compact flexible conductors containing high temperature superconducting tapes 有权
标题翻译：包含高温超导磁带的大电流，紧凑的柔性导体
公开(公告)号：US20080180202A1
公开(公告)日：2008-07-31
申请号：US11880567
申请日：2007-07-23
申请人： Alexander Otto , Ralph P. Mason , James F. Maguire , Jie Yuan
发明人： Alexander Otto , Ralph P. Mason , James F. Maguire , Jie Yuan
IPC分类号： H01F13/00 , H01B12/10 , H01L39/24 , H01B12/16
CPC分类号： H01B12/06 , B63G9/06 , H01F6/06 , H01F13/006 , Y10S505/705 , Y10S505/879 , Y10S505/884 , Y10S505/885 , Y10S505/886 , Y10S505/887
摘要： High-current, compact, flexible conductors containing high temperature superconducting (HTS) tapes and methods for making the same are described. The HTS tapes are arranged into a stack, a plurality of stacks are arranged to form a superstructure, and the superstructure is twisted about the cable axis to obtain a HTS cable. The HTS cables of the invention can be utilized in numerous applications such as cables employed to generate magnetic fields for degaussing and high current electric power transmission or distribution applications.
摘要翻译：描述了包含高温超导（HTS）带的大电流，紧凑，柔性导体及其制造方法。 HTS带布置成堆叠，多个堆叠被布置成形成上部结构，并且上部结构围绕电缆轴线扭转以获得HTS电缆。本发明的HTS电缆可用于许多应用中，例如用于产生用于消磁的磁场的电缆和大电流电力传输或分配应用。

9. 发明申请

US20070093977A1 Fault Management of HTS Power Cable 有权
标题翻译： HTS电力线故障管理
公开(公告)号：US20070093977A1
公开(公告)日：2007-04-26
申请号：US11459167
申请日：2006-07-21
申请人： Jie Yuan , James MaGuire , Arnaud Allais , Frank Schmidt
发明人： Jie Yuan , James MaGuire , Arnaud Allais , Frank Schmidt
IPC分类号： G01R31/00
CPC分类号： H02H7/001 , H02H6/005 , Y02E40/68
摘要： A method and system for providing protection for a superconducting electrical cable located in a utility power network includes detecting a fault current on the superconducting electric cable, determining the cumulative total energy dissipated in the superconducting electrical cable from the fault current and at least one prior fault current over a predetermined time period, and determining whether to disconnect the superconducting electrical cable from the utility power network on the basis of the cumulative total energy dissipated.
摘要翻译：一种用于为位于公共电力网络中的超导电缆提供保护的方法和系统包括检测超导电缆上的故障电流，确定超导电缆中从故障电流和至少一个先前故障消耗的累积总能量电流超过预定时间段，并且基于所消耗的累积总能量来确定是否从超级电力网络断开超导电缆。

10. 发明授权

US06331380B1 Method of pattern etching a low K dielectric layer 失效
标题翻译：图案蚀刻低K电介质层的方法
公开(公告)号：US06331380B1
公开(公告)日：2001-12-18
申请号：US09549262
申请日：2000-04-14
申请人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
发明人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
IPC分类号： G03C558
CPC分类号： H01L21/31138 , H01L21/02115 , H01L21/02118 , H01L21/0212 , H01L21/02274 , H01L21/0274 , H01L21/31116 , H01L21/31144 , H01L21/3127 , H01L21/3146 , H01L21/31612 , H01L21/32136 , H01L21/32139
摘要： A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.
摘要翻译：本发明的第一实施例涉及一种图案化半导体器件导电特征的方法，同时允许容易地去除在蚀刻工艺完成之后保留的任何残留掩模层。使用多层掩模结构，其包括由无机掩模材料的图案化层或由图案化的高温可成像有机掩蔽材料层覆盖的高温有机基掩蔽材料层。无机掩模材料用于将图案转印到高温有机基掩蔽材料上，然后除去。高温有机基掩蔽材料用于转移图案，然后如果需要可以去除。这种方法在铝的图案蚀刻中也是有用的，即使在较低温度下可以蚀刻铝。本发明的第二个实施方案涉及可用于图案化有机聚合物层如低k电介质或其它有机聚合物界面层的专用蚀刻化学物质。该蚀刻化学物质可用于在导电层的蚀刻过程中的掩模开口，或者可用于蚀刻镶嵌结构，其中金属填充层施加在图案化有机基介质层的表面上。蚀刻化学提供了使氧化物，氟，氯和溴含量最小化的蚀刻剂等离子体物质的使用。

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