会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Data Transfer Flows for On-Chip Folding
    • 片上折叠数据传输流程
    • US20110149650A1
    • 2011-06-23
    • US12642649
    • 2009-12-18
    • Jianmin HuangChris AvilaLee M. GavensNeil David HutchisonSergey Anatolievich Gorobets
    • Jianmin HuangChris AvilaLee M. GavensNeil David HutchisonSergey Anatolievich Gorobets
    • G11C16/04G11C14/00
    • G11C11/5628G06F12/0246G06F2212/7203G11C7/1042G11C16/10G11C2211/5641G11C2211/5643
    • A memory system and methods of its operation are presented. The memory system includes a volatile buffer memory and a non-volatile memory circuit, where the non-volatile memory circuit has a first section, where data is stored in a binary format, and a second section, where data is stored in a multi-state format. When writing data to the non-volatile memory, the data is received from a host, stored in the buffer memory, transferred from the buffer memory to into read/write registers of the non-volatile memory circuit, and then written from the read/write registers to the first section of the non-volatile memory circuit using a binary write operation. Portions of the data and then subsequently folded from the first section of the non-volatile memory to the second section of the non-volatile memory, where a folding operation includes reading the portions of the data from multiple locations in the first section into the read/write registers and performing a multi-state programming operation of the potions of the data from the read/write registers into a location the second section of the non-volatile memory. The multi-state programming operations include a first phase and a second phase and one or more of the binary write operations are performed between the phases of the multi-state programming operations.
    • 介绍了一种存储系统及其操作方法。 存储器系统包括易失性缓冲存储器和非易失性存储器电路,其中非易失性存储器电路具有数据以二进制格式存储的第一部分,以及第二部分, 状态格式。 当将数据写入非易失性存储器时,将数据从存储在缓冲存储器中的主机接收,从缓冲存储器传送到非易失性存储器电路的读/写寄存器,然后从读/ 使用二进制写操作将寄存器写入非易失性存储器电路的第一部分。 然后将数据的部分随后从非易失性存储器的第一部分折叠到非易失性存储器的第二部分,其中折叠操作包括将第一部分中的多个位置的数据的部分读入读取 /写入寄存器,并且将数据从读/写寄存器执行到多状态编程操作到非易失性存储器的第二部分的位置。 多状态编程操作包括第一阶段和第二阶段,并且在多状态编程操作的阶段之间执行二进制写入操作中的一个或多个。
    • 8. 发明授权
    • Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
    • 非易失性存储器系统允许将数据更新逆向驱逐到非易失性二进制缓存
    • US09342446B2
    • 2016-05-17
    • US13074402
    • 2011-03-29
    • Neil David HutchisonRobert George Young
    • Neil David HutchisonRobert George Young
    • G06F12/00G06F12/02
    • G06F12/0246G06F2212/7202G06F2212/7203
    • A non-volatile memory system includes a memory section having a non-volatile cache portion storing data in a binary format, a primary user data storage section that stores user data in multi-state format, and an update memory area where the memory system stores data updating user data previously stored in the primary user data. The memory system allows a maximum number of blocks for use in the update memory area. When the memory system receives updated data corresponding to user data already written into the primary user data storage section, it determines whether a block of memory is available in the update memory area. In response to determining that a block of memory is not available in the update memory area, the system determines a block of the update memory to remove from the update memory; copies the data content of the determined update block into the cache portion of the memory section; and subsequently writes the updated data into the update memory.
    • 非易失性存储器系统包括具有以二进制格式存储数据的非易失性高速缓存部分的存储器部分,以多状态格式存储用户数据的主用户数据存储部分和存储器系统存储的更新存储器区域 数据更新先前存储在主用户数据中的用户数据。 存储器系统允许在更新存储器区域中使用最大数量的块。 当存储器系统接收与已经写入主用户数据存储部分的用户数据相对应的更新数据时,它确定更新存储器区域中存储器块是否可用。 响应于确定存储器块在更新存储器区域中不可用,系统确定要从更新存储器中移除的更新存储器的块; 将确定的更新块的数据内容复制到存储器部分的高速缓存部分中; 并随后将更新的数据写入更新存储器。
    • 10. 发明申请
    • Garbage Collection of Memory Blocks Using Volatile Memory
    • 使用易失性存储器的内存块的垃圾收集
    • US20120005406A1
    • 2012-01-05
    • US12828244
    • 2010-06-30
    • Neil David HutchisonSteven Sprouse
    • Neil David HutchisonSteven Sprouse
    • G06F12/02G06F17/30
    • G06F12/0246
    • A method and system for performing garbage collection operations on update blocks in a memory device using volatile memory is disclosed. When performing a garbage collection operation, a first part of the data related to the garbage collection operation is written to a volatile memory in the memory device, and a second part of the data related to the garbage collection operation is written to a non-volatile memory in the memory device. The first part of the data that is written to the volatile memory (such as a random access memory) may comprise control information (such as mapping information of the logical addressable unit to a physical metablock). The second part of the data related to the garbage collection that is written to the non-volatile memory (such as a flash memory) may comprise the consolidated data in the update block.
    • 公开了一种使用易失性存储器在存储器件中对更新块执行垃圾收集操作的方法和系统。 当执行垃圾收集操作时,将与垃圾收集操作相关的数据的第一部分写入存储器件中的易失性存储器,并且将与垃圾回收操作相关的数据的第二部分写入非易失性存储器 存储器中的内存。 写入易失性存储器(例如随机存取存储器)的数据的第一部分可以包括控制信息(例如逻辑可寻址单元映射到物理元区块的信息)。 写入非易失性存储器(例如闪速存储器)的与垃圾收集相关的数据的第二部分可以包括更新块中的合并数据。