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1. 发明申请

US20120184074A1 METHOD OF MANUFACTURING THIN FILM TRANSISTOR 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20120184074A1
公开(公告)日：2012-07-19
申请号：US13431630
申请日：2012-03-27
申请人： Ji-Su AHN , Sung-Chul KIM , Beong-Ju KIM
发明人： Ji-Su AHN , Sung-Chul KIM , Beong-Ju KIM
IPC分类号： H01L21/336
CPC分类号： H01L27/1285
摘要： A thin film transistor for an organic light emitting diode includes a substrate including a pixel portion and an interconnection portion, a buffer layer on the substrate, a gate electrode and a gate interconnection on the buffer layer, wherein the gate electrode is located at the pixel portion and the gate interconnection is located at the interconnection portion, a gate insulating layer on the substrate, a semiconductor layer on the gate electrode, source and drain electrodes electrically connected to the semiconductor layer, and a metal pattern on the gate interconnection.
摘要翻译：一种用于有机发光二极管的薄膜晶体管包括：包括像素部分和互连部分的衬底，衬底上的缓冲层，缓冲层上的栅电极和栅极互连，其中栅电极位于像素并且栅极互连位于互连部分，衬底上的栅极绝缘层，栅电极上的半导体层，电连接到半导体层的源极和漏极以及栅极互连上的金属图案。

2. 发明申请

US20110139767A1 AMRPHOUS SILICON CRYSTALLIZATION APPARATUS 审中-公开
标题翻译：无机硅结晶装置
公开(公告)号：US20110139767A1
公开(公告)日：2011-06-16
申请号：US12898195
申请日：2010-10-05
申请人： Beong-Ju KIM , Ji-Su AHN , Cheol-Ho YU
发明人： Beong-Ju KIM , Ji-Su AHN , Cheol-Ho YU
IPC分类号： H05B3/06 , H05B3/22
CPC分类号： H01L21/02532 , H01L21/02667 , H01L21/67259 , H01L21/68 , H01L21/6838
摘要： Provided is an amorphous silicon (a-Si) crystallization apparatus for crystallizing a-Si into polysilicon (poly-Si), and more particularly, to an a-Si crystallization apparatus for crystallizing a-Si into poly-Si by applying a certain power voltage to a conductive thin film disposed on a substrate including an a-Si layer to generate joule heat, wherein the a-Si formed on the substrate can be crystallized using the same equipment regardless of the size of the substrate. The a-Si crystallization apparatus includes a process chamber, a substrate holder disposed at a lower part of the process chamber, a power voltage application part disposed at an upper part of the process chamber and including a first electrode and a second electrode having a polarity different from the first electrode, and a controller for adjusting a distance between the first and second electrode.
摘要翻译：提供了一种用于将a-Si结晶成多晶硅（poly-Si）的非晶硅（a-Si）结晶装置，更具体地说，涉及通过施加一定的功率将a-Si结晶成多晶硅的a-Si结晶装置电压设置在包括a-Si层的基板上的导电薄膜以产生焦耳热，其中形成在基板上的a-Si可以使用相同的设备结晶，而与基板的尺寸无关。 a-Si结晶装置包括处理室，设置在处理室的下部的基板保持件，设置在处理室的上部的电源施加部，包括第一电极和具有极性的第二电极与第一电极不同，以及用于调节第一和第二电极之间的距离的控制器。

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