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1. 发明授权

US08578503B2 Portable storage device and method of managing resource of the portable storage device 有权
标题翻译：便携式存储装置以及管理便携式存储装置的资源的方法
公开(公告)号：US08578503B2
公开(公告)日：2013-11-05
申请号：US12192543
申请日：2008-08-15
申请人： Ji-Soo Kim , Seon-Taek Kim , Byung-Gook Kim , Byoung-Kook Lee , Chan-Ik Park
发明人： Ji-Soo Kim , Seon-Taek Kim , Byung-Gook Kim , Byoung-Kook Lee , Chan-Ik Park
IPC分类号： G06F7/04
CPC分类号： G06F9/485 , G06F9/5016 , G06F21/10
摘要： Provided are a portable storage device and a method of managing a resource of the portable storage device. The method includes converting a first DRM application into a ready status from an idle status if task processing of the first DRM application is required, and converting the first DRM application into a pending status and a second DRM application into the ready status from the idle status if task processing of the second DRM application is required.
摘要翻译：提供了便携式存储装置和管理便携式存储装置的资源的方法。该方法包括：如果需要第一DRM应用的任务处理，将空闲状态的第一DRM应用转换为就绪状态，并且将第一DRM应用转换为待机状态，并将第二DRM应用从空闲状态转换为就绪状态如果需要第二DRM应用的任务处理。

2. 发明申请

US20090049268A1 PORTABLE STORAGE DEVICE AND METHOD OF MANAGING RESOURCE OF THE PORTABLE STORAGE DEVICE 有权
标题翻译：便携式存储设备和便携式存储设备的资源管理方法
公开(公告)号：US20090049268A1
公开(公告)日：2009-02-19
申请号：US12192543
申请日：2008-08-15
申请人： Ji-Soo KIM , Seon-Taek Kim , Byung-Gook Kim , Byoung-Kook Lee , Chan-Ik Park
发明人： Ji-Soo KIM , Seon-Taek Kim , Byung-Gook Kim , Byoung-Kook Lee , Chan-Ik Park
IPC分类号： G06F12/02 , G06F9/46
CPC分类号： G06F9/485 , G06F9/5016 , G06F21/10
摘要： Provided are a portable storage device and a method of managing a resource of the portable storage device. The method includes converting a first DRM application into a ready status from an idle status if task processing of the first DRM application is required, and converting the first DRM application into a pending status and a second DRM application into the ready status from the idle status if task processing of the second DRM application is required.
摘要翻译：提供了便携式存储装置和管理便携式存储装置的资源的方法。该方法包括：如果需要第一DRM应用的任务处理，将空闲状态的第一DRM应用转换为就绪状态，并且将第一DRM应用转换为待机状态，并将第二DRM应用从空闲状态转换为就绪状态如果需要第二DRM应用的任务处理。

3. 发明授权

US07970981B2 Flash memory device with multi-level cells and method of writing data therein 有权
标题翻译：具有多级单元的闪存设备及其中写入数据的方法
公开(公告)号：US07970981B2
公开(公告)日：2011-06-28
申请号：US11702573
申请日：2007-02-06
申请人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
发明人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
IPC分类号： G06F12/06 , G11C16/04 , G11C11/34 , G11C16/06
CPC分类号： G06F3/0613 , G06F3/0631 , G06F3/0632 , G06F3/064 , G06F3/0679 , G06F12/0246 , G06F2212/1021 , G06F2212/2022 , G06F2212/7202 , G06F2212/7208 , G11C2211/5641
摘要： In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.
摘要翻译：一方面，提供一种在闪存系统中写入数据的方法。闪存系统根据日志块映射方案形成地址映射模式。该方法包括确定要写入日志块的数据的写入模式，并根据数据的写入模式将SLC和MLC块中的一个分配给对数块。

4. 发明申请

US20080104309A1 Flash memory device with multi-level cells and method of writing data therein 有权
标题翻译：具有多级单元的闪存设备及其中写入数据的方法
公开(公告)号：US20080104309A1
公开(公告)日：2008-05-01
申请号：US11702573
申请日：2007-02-06
申请人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
发明人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
IPC分类号： G06F12/06
CPC分类号： G06F3/0613 , G06F3/0631 , G06F3/0632 , G06F3/064 , G06F3/0679 , G06F12/0246 , G06F2212/1021 , G06F2212/2022 , G06F2212/7202 , G06F2212/7208 , G11C2211/5641
摘要： In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.
摘要翻译：一方面，提供一种在闪存系统中写入数据的方法。闪存系统根据日志块映射方案形成地址映射模式。该方法包括确定要写入日志块的数据的写入模式，并根据数据的写入模式将SLC和MLC块中的一个分配给对数块。

5. 发明申请

US20120159054A1 FLASH MEMORY DEVICE WITH MULTI-LEVEL CELLS AND METHOD OF WRITING DATA THEREIN 审中-公开
标题翻译：具有多级电池的闪存存储器件和写入数据的方法
公开(公告)号：US20120159054A1
公开(公告)日：2012-06-21
申请号：US13406862
申请日：2012-02-28
申请人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
发明人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
IPC分类号： G06F12/02
CPC分类号： G06F3/0613 , G06F3/0631 , G06F3/0632 , G06F3/064 , G06F3/0679 , G06F12/0246 , G06F2212/1021 , G06F2212/2022 , G06F2212/7202 , G06F2212/7208 , G11C2211/5641
摘要： In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.
摘要翻译：一方面，提供一种在闪存系统中写入数据的方法。闪存系统根据日志块映射方案形成地址映射模式。该方法包括确定要写入日志块的数据的写入模式，并根据数据的写入模式将SLC和MLC块中的一个分配给对数块。

6. 发明授权

US08843699B2 Flash memory device with multi-level cells and method of writing data therein 有权
标题翻译：具有多级单元的闪存设备及其中写入数据的方法
公开(公告)号：US08843699B2
公开(公告)日：2014-09-23
申请号：US13777816
申请日：2013-02-26
申请人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
发明人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
IPC分类号： G06F12/06 , G11C16/04 , G06F12/02
CPC分类号： G06F3/0613 , G06F3/0631 , G06F3/0632 , G06F3/064 , G06F3/0679 , G06F12/0246 , G06F2212/1021 , G06F2212/2022 , G06F2212/7202 , G06F2212/7208 , G11C2211/5641
摘要： In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.
摘要翻译：一方面，提供一种在闪存系统中写入数据的方法。闪存系统根据日志块映射方案形成地址映射模式。该方法包括确定要写入日志块的数据的写入模式，并根据数据的写入模式将SLC和MLC块中的一个分配给对数块。

7. 发明申请

US20130173857A1 FLASH MEMORY DEVICE WITH MULTI-LEVEL CELLS AND METHOD OF WRITING DATA THEREIN 有权
公开(公告)号：US20130173857A1
公开(公告)日：2013-07-04
申请号：US13777816
申请日：2013-02-26
申请人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
发明人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
IPC分类号： G06F12/02
CPC分类号： G06F3/0613 , G06F3/0631 , G06F3/0632 , G06F3/064 , G06F3/0679 , G06F12/0246 , G06F2212/1021 , G06F2212/2022 , G06F2212/7202 , G06F2212/7208 , G11C2211/5641
摘要： In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.

8. 发明申请

US20110219180A1 FLASH MEMORY DEVICE WITH MULTI-LEVEL CELLS AND METHOD OF WRITING DATA THEREIN 审中-公开
标题翻译：具有多级电池的闪存存储器件和写入数据的方法
公开(公告)号：US20110219180A1
公开(公告)日：2011-09-08
申请号：US13110572
申请日：2011-05-18
申请人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
发明人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
IPC分类号： G06F12/02
CPC分类号： G06F3/0613 , G06F3/0631 , G06F3/0632 , G06F3/064 , G06F3/0679 , G06F12/0246 , G06F2212/1021 , G06F2212/2022 , G06F2212/7202 , G06F2212/7208 , G11C2211/5641
摘要： In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.
摘要翻译：一方面，提供一种在闪存系统中写入数据的方法。闪存系统根据日志块映射方案形成地址映射模式。该方法包括确定要写入日志块的数据的写入模式，并根据数据的写入模式将SLC和MLC块中的一个分配给对数块。

9. 发明申请

US20070204099A1 Methods for programming NAND flash memory and memory system 审中-公开
标题翻译： NAND闪存和内存系统编程方法
公开(公告)号：US20070204099A1
公开(公告)日：2007-08-30
申请号：US11585242
申请日：2006-10-24
申请人： Seon-Taek Kim , Chan-Ik Park
发明人： Seon-Taek Kim , Chan-Ik Park
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7203
摘要： A method of programming a memory system including a flash memory comprising; in response to a conventional data input command, sequentially executing an address mapping operation, an address input operation, a load data operation, and a program execution operation, or in response to a new data input command, sequentially executing a load data operation, an address input operation, and a program execution operation, and further executing an address mapping operation in parallel with the load data operation.
摘要翻译：一种编程包括闪速存储器的存储器系统的方法，包括：响应于常规数据输入命令，顺序地执行地址映射操作，地址输入操作，加载数据操作和程序执行操作，或者响应于新的数据输入命令，顺序执行加载数据操作，地址输入操作和程序执行操作，并且与负载数据操作并行地进一步执行地址映射操作。

10. 发明授权

US08010736B2 Nonvolatile semiconductor memory device for supporting high speed search in cache memory 有权
标题翻译：用于在高速缓冲存储器中支持高速搜索的非易失性半导体存储器件
公开(公告)号：US08010736B2
公开(公告)日：2011-08-30
申请号：US12029665
申请日：2008-02-12
申请人： Chan-Ik Park , Jin-Wook Lee , Byoung-Kook Lee
发明人： Chan-Ik Park , Jin-Wook Lee , Byoung-Kook Lee
IPC分类号： G06F12/00
CPC分类号： G06F12/0866 , G06F12/0246 , G06F2212/222 , G06F2212/7201 , G06F2212/7203
摘要： A method for reducing a memory map table search time when employing a semiconductor memory device as a temporary memory of large capacity storage device, and a semiconductor memory device therefore, are provided. A MAP RAM is prepared for storing map table data related to the nonvolatile memory area in the volatile memory area. At an initial power-up operation, it is determined whether a logical address is searched for from the map table data while the map table data existing in a map storage area of the nonvolatile memory area is loaded into the MAP RAM. A physical address corresponding to the logical address is provided as an output, when the logical address is searched for. Search time for a memory map table is reduced and read performance in a high speed map information search is increased.
摘要翻译：提供一种用于在采用半导体存储器件作为大容量存储器件的临时存储器时减少存储器映射表搜索时间的方法，以及半导体存储器件。准备MAP RAM用于存储与易失性存储器区域中的非易失性存储器区域相关的映射表数据。在初始加电操作中，确定存在于非易失存储器区域的映射存储区域中的映射表数据是否被加载到MAP RAM中时，从地图表数据中搜索逻辑地址。当搜索逻辑地址时，提供与逻辑地址对应的物理地址作为输出。降低了存储器映射表的搜索时间，并且增加了在高速地图信息搜索中的读取性能。

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