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    • 10. 发明授权
    • Stripper composition for photoresist
    • 剥离剂组合物用于光刻胶
    • US06783919B2
    • 2004-08-31
    • US10301973
    • 2002-11-21
    • Hong-Sik ParkSung-Chul KangHong-Je ChoAn-Na Park
    • Hong-Sik ParkSung-Chul KangHong-Je ChoAn-Na Park
    • G03F742
    • G03F7/425
    • The invention relates to a TFT-LCD high-performance stripper composition for a photoresist, and more particularly to a stripper composition for a photoresist comprising: 20-60 wt % of monoethanolamine, 15-50 wt % of N,N-dimethylacetamide, 15-50 wt % of carbitol, and 0.1-10 wt % of gallic acid. The invention also provides a stripper composition for a photoresist comprising: 20-60 wt % of monoethanolamine, 15-50 wt % of N,N-dimethylacetamide, and 15-50 wt % of carbitol. The stripper composition for a photoresist of the invention significantly reduces stripping time when applied to the TFT-LCD manufacturing process and leaves no impurity particles. By allowing the hard baking and ashing processes to be omitted, the gate process line can be simplified, which enables cost reduction. In addition, when it is applied to a process wherein silver (Ag) is used as reflective/transflective layer, it offers stripping ability and corrosion resistance of the pure Ag layer.
    • 本发明涉及一种用于光致抗蚀剂的TFT-LCD高性能剥离组合物,更具体地涉及一种用于光致抗蚀剂的剥离剂组合物,其包含:20-60重量%的单乙醇胺,15-50重量%的N,N-二甲基乙酰胺,15 -50重量%的卡必醇和0.1-10重量%的没食子酸。 本发明还提供了一种用于光致抗蚀剂的汽提组合物,其包含:20-60重量%的单乙醇胺,15-50重量%的N,N-二甲基乙酰胺和15-50重量%的卡必醇。用于本发明的光致抗蚀剂的汽提组合物 显着降低了在应用于TFT-LCD制造工艺时的剥离时间,并且不留下杂质颗粒。 通过允许省略硬烘烤和灰化过程,可以简化浇口生产线,这降低了成本。 另外,当将其应用于其中使用银(Ag)作为反射/半透反射层的工艺时,其提供纯Ag层的剥离能力和耐腐蚀性。