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1. 发明申请

US20120243203A1 VEHICLE LIGHT 审中-公开
标题翻译：车辆灯
公开(公告)号：US20120243203A1
公开(公告)日：2012-09-27
申请号：US13426318
申请日：2012-03-21
申请人： Teruo KOIKE , Ji-Hao Liang
发明人： Teruo KOIKE , Ji-Hao Liang
IPC分类号： F21V9/00 , F21V9/14
CPC分类号： F21S41/24 , F21S41/14 , F21S41/16
摘要： A vehicle light which uses a laser light source device and has a shorter dimension in an optical axis direction than conventional vehicle lights. The vehicle light comprises a laser light source device and an optical system configured so as to form a predetermined light distribution pattern. The laser light source device includes: a cylindrical light-guiding part having a diffusing surface set in a region other than a light-introducing surface; a phosphor arranged in a light-emitting region on an outer circumferential surface of the light-guiding part; a reflective film arranged in a region of the light-guiding part other than the light-introducing surface and the light-emitting region; and a laser light source that outputs a laser beam which is introduced into the light-guiding part from the light-introducing surface and enters the phosphor. The light-guiding part and the laser light source are arranged adjacent to each other.
摘要翻译：一种车辆用灯具，其使用激光光源装置，其光轴方向的尺寸比传统车辆灯短。车辆光包括激光光源装置和配置为形成预定配光图案的光学系统。激光光源装置包括：具有设置在除了光导入面以外的区域的扩散面的圆柱形导光部; 配置在所述导光部的外周面的发光区域的荧光体; 布置在所述导光部分的除了所述光导入表面和所述发光区域之外的区域中的反射膜; 以及激光源，其输出从所述光导入面导入所述导光部并进入所述荧光体的激光束。导光部和激光光源彼此相邻配置。

2. 发明授权

US08467633B2 Wavelength conversion structure and light source apparatus 有权
标题翻译：波长转换结构和光源装置
公开(公告)号：US08467633B2
公开(公告)日：2013-06-18
申请号：US13211359
申请日：2011-08-17
申请人： Ji-Hao Liang , Teruo Koike
发明人： Ji-Hao Liang , Teruo Koike
IPC分类号： G02F1/01 , G02F1/35 , H01S3/04 , B05B5/00 , H01L25/00 , G01T1/20
CPC分类号： H01S5/0092 , F21S41/14 , F21S41/16 , F21Y2103/00 , F21Y2115/30 , H01L2224/48091 , H01L2224/48227 , H01S5/02236 , H01S5/02276 , H01S5/32341 , H01L2924/00014
摘要： A wavelength conversion structure includes a light guide formed of a light-transmissive member having a laser light incident port that allows the laser light to be introduced and a phosphor-containing layer that covers at least part of the surface of the light guide. The light guide has a light diffusing structure having asperities and a light reflecting film. The asperities are formed over the surface of the light guide except a laser light incident surface having the laser light incident port. The light reflecting film is formed over the surface of the light guide along the asperities except the laser light incident port and the portion covered with the phosphor-containing layer.
摘要翻译：波长转换结构包括由具有允许引入激光的激光入射口的透光构件和覆盖光导的表面的至少一部分的含磷光体层形成的光导。导光体具有凹凸的光漫射结构和光反射膜。除了具有激光入射口的激光入射面以外，在导光体的表面上形成有凹凸。除了激光入射口和被含荧光体层覆盖的部分之外，沿着凹凸形状，在导光体的表面上形成光反射膜。

3. 发明申请

US20120051377A1 WAVELENGTH CONVERSION STRUCTURE AND LIGHT SOURCE APPARATUS 有权
标题翻译：波长转换结构和光源设备
公开(公告)号：US20120051377A1
公开(公告)日：2012-03-01
申请号：US13211359
申请日：2011-08-17
申请人： Ji-Hao Liang , Teruo Koike
发明人： Ji-Hao Liang , Teruo Koike
IPC分类号： H01S3/04 , H01S5/02 , B05D5/06 , G02F1/35
CPC分类号： H01S5/0092 , F21S41/14 , F21S41/16 , F21Y2103/00 , F21Y2115/30 , H01L2224/48091 , H01L2224/48227 , H01S5/02236 , H01S5/02276 , H01S5/32341 , H01L2924/00014
摘要： A wavelength conversion structure includes a light guide formed of a light-transmissive member having a laser light incident port that allows the laser light to be introduced and a phosphor-containing layer that covers at least part of the surface of the light guide. The light guide has a light diffusing structure having asperities formed over the surface of the light guide except a laser light incident surface having the laser light incident port and a light reflecting film formed over the surface of the light guide along the asperities except the laser light incident port and the portion covered with the phosphor-containing layer.
摘要翻译：波长转换结构包括由具有允许引入激光的激光入射口的透光构件和覆盖光导的表面的至少一部分的含磷光体层形成的光导。导光体具有形成在导光体表面以外的凹凸的光漫射结构，除了具有激光入射面的激光入射面和形成在导光体表面以外的光反射膜沿着除了激光之外的凹凸入射口和被含磷光体层覆盖的部分。

4. 发明申请

US20120224378A1 WAVELENGTH CONVERTING MEMBER AND LIGHT SOURCE DEVICE 审中-公开
标题翻译：波长转换会员和光源设备
公开(公告)号：US20120224378A1
公开(公告)日：2012-09-06
申请号：US13409676
申请日：2012-03-01
申请人： Teruo KOIKE , Ji-Hao Liang
发明人： Teruo KOIKE , Ji-Hao Liang
IPC分类号： F21V13/14 , F21V13/02
CPC分类号： H01S5/005 , C09K11/7774 , H01S5/32341
摘要： A wavelength converting member radiates light having a wavelength different from that of laser light introduced into the wavelength converting member. The wavelength converting member has a phosphor layer that contains a phosphor therein. The phosphor layer has a laser light incidence surface capable of receiving the laser light. The wavelength converting member also has a high-refractive layer that is bonded to an opposite surface of the phosphor layer to the laser light incidence surface thereof. A refractive index of the high-refractive layer is higher than a refractive index of the phosphor layer. The high-refractive layer has concaves on at least either the bonding surface where the high-refractive layer is bonded to the phosphor layer or a light extraction surface that is opposite the bonding surface.
摘要翻译：波长转换构件辐射具有与引入到波长转换构件的激光的波长不同的波长的光。波长转换构件具有在其中含有荧光体的荧光体层。荧光体层具有能够接收激光的激光入射面。波长转换部件还具有与荧光体层相对的激光入射面接合的高折射率层。高折射层的折射率高于荧光体层的折射率。高折射层在高折射层与荧光体层接合的接合面或与接合面相反的光提取面的至少一面具有凹部。

5. 发明授权

US08772808B2 Semiconductor light emitting element and manufacturing method thereof 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US08772808B2
公开(公告)日：2014-07-08
申请号：US13426141
申请日：2012-03-21
申请人： Yasuyuki Shibata , Ji-Hao Liang , Jiro Higashino
发明人： Yasuyuki Shibata , Ji-Hao Liang , Jiro Higashino
IPC分类号： H01L33/00
CPC分类号： H01L33/0095 , H01L33/0079 , H01L33/44
摘要： A manufacturing method of a semiconductor light emitting element, includes forming sacrifice portions within the width of street portions in a semiconductor laminated body, and performing wet etching to remove the sacrifice portions together with their neighboring portions, thereby removing etching residuals in the streets.
摘要翻译：半导体发光元件的制造方法，包括在半导体层叠体中在街道部分的宽度内形成牺牲部分，并进行湿蚀刻以与其相邻部分一起去除牺牲部分，从而去除街道中的蚀刻残留物。

6. 发明授权

US08658440B2 Nitride semiconductor crystal with surface texture 有权
标题翻译：氮化物半导体晶体具有表面纹理
公开(公告)号：US08658440B2
公开(公告)日：2014-02-25
申请号：US13311644
申请日：2011-12-06
申请人： Ji-Hao Liang , Masahiko Tsuchiya , Takako Chinone , Masataka Kajikawa
发明人： Ji-Hao Liang , Masahiko Tsuchiya , Takako Chinone , Masataka Kajikawa
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/24 , H01L33/0075 , H01L33/08 , H01L33/32
摘要： A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range.
摘要翻译：氮化物半导体发光器件通过以下方式形成：在形成在衬底上的第一氮化物半导体层上形成抗蚀剂图案，该抗蚀剂图案具有相对于衬底表面倾斜的角度在垂直于基材表面; 通过使用抗蚀剂图案作为掩模来蚀刻基板，以将抗蚀剂图案转印到第一氮化物半导体层; 以及在所述图案化的第一氮化物半导体层上形成发光层。氮化物半导体发光器件可以发射近白光或具有大致等于或接近可见光范围的波长范围。

7. 发明授权

US08530256B2 Production process for semiconductor device 有权
标题翻译：半导体器件的生产工艺
公开(公告)号：US08530256B2
公开(公告)日：2013-09-10
申请号：US13416635
申请日：2012-03-09
申请人： Yasuyuki Shibata , Ji-Hao Liang , Takako Chinone
发明人： Yasuyuki Shibata , Ji-Hao Liang , Takako Chinone
IPC分类号： H01L21/205 , H01L33/32
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/007 , H01L33/0079
摘要： (a) Forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids. (b) Forming on the void-containing layer an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids. (c) Forming on the n-type layer an active layer made of a group III nitride compound semiconductor. (d) Forming on the active layer a p-type layer made of a p-type group III nitride compound semiconductor. (e) Bonding a support substrate above the p-type layer. (f) Peeling off the growth substrate at the boundary where the void are produced. (g) Planarizing the n-type layer. Step (b) comprises (b1) forming part of the n-type layer under conditions where horizontal growth is relatively weak and (b2) forming the remaining part of the n-type layer under conditions where horizontal growth is relatively strong.
摘要翻译：（a）在生长衬底上形成由III族氮化物化合物半导体制成且含有空隙的含空隙层。（b）在含空隙层上形成由n型III族氮化物化合物半导体制成并用于封闭空隙的n型层。（c）在n型层上形成由III族氮化物化合物半导体制成的有源层。（d）在有源层上形成由p型III族氮化物半导体构成的p型层。（e）将支撑衬底粘合在p型层上。（f）在生成空隙的边界处剥离生长衬底。（g）平面化n型层。步骤（b）包括（b1）在水平生长相对较弱的条件下形成n型层的一部分，（b2）在水平生长相对较强的条件下形成n型层的剩余部分。

8. 发明授权

US08158993B2 Nitride semiconductor crystal with surface texture 有权
标题翻译：氮化物半导体晶体具有表面纹理
公开(公告)号：US08158993B2
公开(公告)日：2012-04-17
申请号：US11843916
申请日：2007-08-23
申请人： Ji-Hao Liang , Masahiko Tsuchiya , Takako Chinone , Masataka Kajikawa
发明人： Ji-Hao Liang , Masahiko Tsuchiya , Takako Chinone , Masataka Kajikawa
IPC分类号： H01L29/20 , H01L33/00
CPC分类号： H01L33/24 , H01L33/0075 , H01L33/08 , H01L33/32
摘要： A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range.
摘要翻译：氮化物半导体发光器件通过以下方式形成：在形成在衬底上的第一氮化物半导体层上形成抗蚀剂图案，该抗蚀剂图案具有相对于衬底表面倾斜的角度在垂直于基材表面; 通过使用抗蚀剂图案作为掩模来蚀刻基板，以将抗蚀剂图案转印到第一氮化物半导体层; 以及在所述图案化的第一氮化物半导体层上形成发光层。氮化物半导体发光器件可以发射近白光或具有大致等于或接近可见光范围的波长范围。

9. 发明授权

US08236672B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08236672B2
公开(公告)日：2012-08-07
申请号：US12636961
申请日：2009-12-14
申请人： Takako Chinone , Ji-Hao Liang , Yasuyuki Shibata , Jiro Higashino
发明人： Takako Chinone , Ji-Hao Liang , Yasuyuki Shibata , Jiro Higashino
IPC分类号： H01L21/36 , H01L21/20 , H01L21/00 , H01L29/24 , H01L21/18 , H01L27/108
CPC分类号： H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02636 , H01L33/007 , H01L33/0079
摘要： A cavity-containing layer having a plurality of cavities is formed on a growth substrate by carrying out in alternating fashion a plurality of cycles of a first and second growth steps of growing a group III nitride at growth rates different from each other. The semiconductor epitaxial layer is subsequently formed on the cavity-containing layer, after which a support substrate is bonded to the semiconductor epitaxial layer. The growth substrate is separated from the cavity-containing layer.
摘要翻译：通过以不同的生长速率生长III族氮化物的第一和第二生长步骤的多个循环的交替方式，在生长衬底上形成具有多个空腔的含空腔层。随后在空腔含有层上形成半导体外延层，然后将支撑衬底接合到半导体外延层。生长衬底与含空腔层分离。

10. 发明申请

US20120231608A1 PRODUCTION PROCESS FOR SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的生产工艺
公开(公告)号：US20120231608A1
公开(公告)日：2012-09-13
申请号：US13416635
申请日：2012-03-09
申请人： Yasuyuki SHIBATA , Ji-Hao Liang , Takako Chinone
发明人： Yasuyuki SHIBATA , Ji-Hao Liang , Takako Chinone
IPC分类号： H01L21/20
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/007 , H01L33/0079
摘要： (a) Forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids. (b) Forming on the void-containing layer an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids. (c) Forming on the n-type layer an active layer made of a group III nitride compound semiconductor. (d) Forming on the active layer a p-type layer made of a p-type group III nitride compound semiconductor. (e) Bonding a support substrate above the p-type layer. (f) Peeling off the growth substrate at the boundary where the void are produced. (g) Planarizing the n-type layer. Step (b) comprises (b1) forming part of the n-type layer under conditions where horizontal growth is relatively weak and (b2) forming the remaining part of the n-type layer under conditions where horizontal growth is relatively strong.
摘要翻译：（a）在生长衬底上形成由III族氮化物化合物半导体制成且含有空隙的含空隙层。（b）在含空隙层上形成由n型III族氮化物化合物半导体制成并用于封闭空隙的n型层。（c）在n型层上形成由III族氮化物化合物半导体制成的有源层。（d）在有源层上形成由p型III族氮化物半导体构成的p型层。（e）将支撑衬底粘合在p型层上。（f）在生成空隙的边界处剥离生长衬底。（g）平面化n型层。步骤（b）包括（b1）在水平生长相对较弱的条件下形成n型层的一部分，（b2）在水平生长相对较强的条件下形成n型层的剩余部分。

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