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1. 发明申请

US20090084406A1 Composition for stripping and stripping method 有权
标题翻译：汽提和汽提方法的组成
公开(公告)号：US20090084406A1
公开(公告)日：2009-04-02
申请号：US12214658
申请日：2008-06-20
申请人： Ji Sun Lee , Hong Sick Park , Jong Hyun Choung , Sun Young Hong , Bong Kyun Kim , Byeong Jin Lee , Byung Uk Kim , Jong Hyun Jeong , Suk Il Yoon , Seong Bae Kim , Sung Gun Shin , Soon Beom Huh , Se Hwan Jung , Doo Young Jang
发明人： Ji Sun Lee , Hong Sick Park , Jong Hyun Choung , Sun Young Hong , Bong Kyun Kim , Byeong Jin Lee , Byung Uk Kim , Jong Hyun Jeong , Suk Il Yoon , Seong Bae Kim , Sung Gun Shin , Soon Beom Huh , Se Hwan Jung , Doo Young Jang
IPC分类号： C11D7/06 , B08B7/04
CPC分类号： G03F7/425
摘要： The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.
摘要翻译：本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板。在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的无机盐化合物。有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。

2. 发明授权

US07968507B2 Composition for stripping and stripping method 有权
标题翻译：汽提和汽提方法的组成
公开(公告)号：US07968507B2
公开(公告)日：2011-06-28
申请号：US12214658
申请日：2008-06-20
申请人： Ji Sun Lee , Hong Sick Park , Jong Hyun Choung , Sun Young Hong , Bong Kyun Kim , Byeong Jin Lee , Byung Uk Kim , Jong Hyun Jeong , Suk Il Yoon , Seong Bae Kim , Sung Gun Shin , Soon Beom Huh , Se Hwan Jung , Doo Young Jang
发明人： Ji Sun Lee , Hong Sick Park , Jong Hyun Choung , Sun Young Hong , Bong Kyun Kim , Byeong Jin Lee , Byung Uk Kim , Jong Hyun Jeong , Suk Il Yoon , Seong Bae Kim , Sung Gun Shin , Soon Beom Huh , Se Hwan Jung , Doo Young Jang
IPC分类号： C11D7/06
CPC分类号： G03F7/425
摘要： The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.
摘要翻译：本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板。在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的无机盐化合物。有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。

3. 发明授权

US08163095B2 Composition for stripping and stripping method 有权
标题翻译：汽提和汽提方法的组成
公开(公告)号：US08163095B2
公开(公告)日：2012-04-24
申请号：US13101973
申请日：2011-05-05
申请人： Ji Sun Lee , Hong Sick Park , Jong Hyun Choung , Sun Young Hong , Bong Kyun Kim , Byeong Jin Lee , Byung Uk Kim , Jong Hyun Jeong , Suk II Yoon , Seong Bae Kim , Sung Gun Shin , Soon Beom Huh , Se Hwan Jung , Doo Young Jang
发明人： Ji Sun Lee , Hong Sick Park , Jong Hyun Choung , Sun Young Hong , Bong Kyun Kim , Byeong Jin Lee , Byung Uk Kim , Jong Hyun Jeong , Suk II Yoon , Seong Bae Kim , Sung Gun Shin , Soon Beom Huh , Se Hwan Jung , Doo Young Jang
IPC分类号： C11D7/50
CPC分类号： G03F7/425
摘要： The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.
摘要翻译：本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板。在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的无机盐化合物。有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。

4. 发明申请

US20070278487A1 Thin film transistor substrate and method of manufacturing thereof 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20070278487A1
公开(公告)日：2007-12-06
申请号：US11706012
申请日：2007-02-12
申请人： Jong Hyun Choung , Hong Sick Park , Sun Young Hong , Bong Kyun Kim , Bong Kyu Shin , Won Suk Shin , Byeong Jin Lee
发明人： Jong Hyun Choung , Hong Sick Park , Sun Young Hong , Bong Kyun Kim , Bong Kyu Shin , Won Suk Shin , Byeong Jin Lee
IPC分类号： H01L33/00
CPC分类号： H01L27/1288 , H01L27/124 , H01L27/1248
摘要： A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.
摘要翻译：薄膜晶体管基板和薄膜晶体管基板的制造方法包括形成栅极线和数据线，该栅极线和数据线被插入并且限定基板上的像素区域的栅极绝缘层彼此相交，薄膜晶体管电连接到栅极线和数据线，以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案，并形成连接到薄膜晶体管的像素电极。

5. 发明授权

US08158470B2 Thin film transistor substrate and method of manufacturing thereof 失效
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08158470B2
公开(公告)日：2012-04-17
申请号：US13018309
申请日：2011-01-31
申请人： Jong Hyun Choung , Hong Sick Park , Sun Young Hong , Bong Kyun Kim , Bong Kyu Shin , Won Suk Shin , Byeong Jin Lee
发明人： Jong Hyun Choung , Hong Sick Park , Sun Young Hong , Bong Kyun Kim , Bong Kyu Shin , Won Suk Shin , Byeong Jin Lee
IPC分类号： H01L21/336
CPC分类号： H01L27/1288 , H01L27/124 , H01L27/1248
摘要： A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.
摘要翻译：薄膜晶体管基板和制造薄膜晶体管基板的方法包括：形成栅极线和数据线，其中栅极绝缘层相互插入并限定基板上的像素区域，薄膜晶体管电连接到栅极线和数据线，以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案，并形成连接到薄膜晶体管的像素电极。

6. 发明授权

US07901965B2 Thin film transistor substrate and method of manufacturing thereof 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US07901965B2
公开(公告)日：2011-03-08
申请号：US11706012
申请日：2007-02-12
申请人： Jong Hyun Choung , Hong Sick Park , Sun Young Hong , Bong Kyun Kim , Bong Kyu Shin , Won Suk Shin , Byeong Jin Lee
发明人： Jong Hyun Choung , Hong Sick Park , Sun Young Hong , Bong Kyun Kim , Bong Kyu Shin , Won Suk Shin , Byeong Jin Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/124 , H01L27/1248
摘要： A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.
摘要翻译：薄膜晶体管基板和制造薄膜晶体管基板的方法包括：形成栅极线和数据线，该栅极线和数据线被插入并且限定基板上的像素区域的栅极绝缘层彼此相交;薄膜晶体管，电连接到栅极线和数据线，以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案，并形成连接到薄膜晶体管的像素电极。

7. 发明申请

US20120057180A1 Image forming apparatus and method for controlling the same 审中-公开
标题翻译：图像形成装置及其控制方法
公开(公告)号：US20120057180A1
公开(公告)日：2012-03-08
申请号：US13137653
申请日：2011-08-31
申请人： Byeong Jin Lee , Hyung Jong Kang , In Chang Park , Mi Sook Song , Hee Chul Jung
发明人： Byeong Jin Lee , Hyung Jong Kang , In Chang Park , Mi Sook Song , Hee Chul Jung
IPC分类号： G06K15/02
CPC分类号： G06F21/608 , G06F2221/2117 , G06F2221/2141 , G06F2221/2149 , H04L63/104
摘要： An image forming apparatus and a method for controlling the same are disclosed. The image forming apparatus includes an input unit to generate an administrator scan profile and establish a scan profile policy, and allows the administrator of the apparatus to apply a specific scan profile policy to all users sharing the apparatus using the input unit. The image forming apparatus includes an input unit to perform at least one of generation of a first scan profile and establishment of a scan profile policy, and a controller to perform a scanning operation according to at least one of the first scan profile and the scan profile policy.
摘要翻译：公开了一种图像形成装置及其控制方法。图像形成装置包括用于生成管理员扫描配置文件并建立扫描配置文件策略的输入单元，并允许设备的管理员使用输入单元向共享设备的所有用户应用特定的扫描配置文件策略。图像形成装置包括：输入单元，用于执行生成第一扫描配置文件和建立扫描配置文件策略中的至少一个;以及控制器，用于根据第一扫描配置文件和扫描配置文件中的至少一个执行扫描操作政策。

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