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1. 发明申请

US20120001222A1 LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE PACKAGE 有权
标题翻译：发光装置和发光装置包装
公开(公告)号：US20120001222A1
公开(公告)日：2012-01-05
申请号：US13215397
申请日：2011-08-23
申请人： Ji Hyung MOON , Sang Youl LEE , Chung song KIM , Kwang Ki CHOI , June O. SONG
发明人： Ji Hyung MOON , Sang Youl LEE , Chung song KIM , Kwang Ki CHOI , June O. SONG
IPC分类号： H01L33/62
CPC分类号： H01L33/44 , H01L33/20 , H01L33/382 , H01L2224/48091 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A light emitting device including a light emitting structure including a second conductive type semiconductor layer, an active layer, and a first conductive type semiconductor layer, and a first protective layer disposed on a side of the light emitting structure, wherein the first protective layer overlaps with the first conductive type semiconductor layer in a vertical direction.
摘要翻译：一种包括发光结构的发光器件，包括第二导电类型半导体层，有源层和第一导电类型半导体层，以及设置在发光结构侧的第一保护层，其中第一保护层重叠第一导电类型半导体层在垂直方向上。

2. 发明申请

US20120001218A1 LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20120001218A1
公开(公告)日：2012-01-05
申请号：US13175549
申请日：2011-07-01
申请人： Kwang Ki CHOI , Hwan Hee JEONG , Sang Youl LEE , June O. SONG , Ji hyung MOON , Se Yeon JUNG , Tae-Yeon SEONG
发明人： Kwang Ki CHOI , Hwan Hee JEONG , Sang Youl LEE , June O. SONG , Ji hyung MOON , Se Yeon JUNG , Tae-Yeon SEONG
IPC分类号： H01L33/60 , H01L33/44 , H01L33/36
CPC分类号： H01L33/14 , H01L33/16 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： Provided are a light emitting device and a method of fabricating the same. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer being formed of a semiconductor material. Also, the light emitting device further includes a current spreading layer comprising a plurality of carbon nanotube bundles physically connected to each other on one of the first and second conductive type semiconductor layers.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括第一导电类型半导体层，第二导电类型半导体层和在第一导电类型半导体层和第二导电类型半导体层之间的有源层，有源层由半导体材料形成。此外，发光器件还包括电流扩展层，其包括在第一和第二导电类型半导体层中的一个上彼此物理连接的多个碳纳米管束。

3. 发明申请

US20130228814A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
公开(公告)号：US20130228814A1
公开(公告)日：2013-09-05
申请号：US13862784
申请日：2013-04-15
申请人： Hwan Hee JEONG , Sang Youl LEE , June O. SONG , Tchang Hun OH , Hee Seok CHOI , Kwang Ki CHOI
发明人： Hwan Hee JEONG , Sang Youl LEE , June O. SONG , Tchang Hun OH , Hee Seok CHOI , Kwang Ki CHOI
IPC分类号： H01L33/38
CPC分类号： H01L33/44 , H01L33/0075 , H01L33/0079 , H01L33/145 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2224/48091 , H01L2933/0016 , H01L2924/00014
摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

4. 发明申请

US20110133242A1 LIGHT EMITTING APPARATUS 有权
标题翻译：发光装置
公开(公告)号：US20110133242A1
公开(公告)日：2011-06-09
申请号：US12964161
申请日：2010-12-09
申请人： Kwang Ki CHOI , Hwan Hee JEONG , Sang Youl LEE , June O. SONG
发明人： Kwang Ki CHOI , Hwan Hee JEONG , Sang Youl LEE , June O. SONG
IPC分类号： H01L33/62
CPC分类号： H01L33/60 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/58 , H01L33/62 , H01L2224/48091 , H01L2924/0002 , H01L2924/12032 , H01L2924/00 , H01L2924/00014
摘要： A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer.
摘要翻译：一种发光器件，包括接触层，接触层上的阻挡层，与阻挡层相邻的保护层，阻挡层上的发光体以及耦合到光发射器的电极层。电极层与阻挡层和保护层重叠，并且阻挡层具有导电性，其基本上阻挡来自光发射器的电流沿朝向接触层的方向。此外，保护层可以是导电的，以允许电流流到光发射器或不导电以阻止电流从发光体朝向接触层流动。

5. 发明申请

US20120104453A1 NITRIDE LIGHT EMITTING DEVICE OF USING SUBSTRATE DECOMPOSITION PREVENTION LAYER AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：使用基板分解防止层的氮化物发光装置及其制造方法
公开(公告)号：US20120104453A1
公开(公告)日：2012-05-03
申请号：US13344947
申请日：2012-01-06
申请人： June O. SONG
发明人： June O. SONG
IPC分类号： H01L33/42
CPC分类号： H01L33/02 , H01L33/0079
摘要： A light-emitting device is provided with a substrate decomposition prevention layer using as a matrix at least one selected from the group consisting of boron nitride (B—N), silicon carbide (Si—C), and silicon carbon nitride (Si—C—N), and patterned into a predetermined shape; an n-type nitride clad layer formed on the substrate decomposition prevention layer; a nitride active layer formed on the n-type nitride clad layer; a p-type nitride clad layer formed on the nitride active layer; a p-type ohmic contact layer formed on the p-type nitride clad layer; a p-type electrode pad formed on the p-type ohmic contact layer; an n-type ohmic contact layer electrically connected to the n-type nitride clad layer by means of a patterned region of the substrate decomposition prevention layer; and an n-type electrode pad formed beneath the n-type ohmic contact layer.
摘要翻译：发光装置具有使用从由氮化硼（B-N），碳化硅（Si-C）和氮化硅（Si-C）组成的组中选出的至少一种作为基质的基板分解防止层 -N），并且被图案化成预定的形状; 形成在所述基板分解防止层上的n型氮化物覆盖层; 形成在所述n型氮化物覆盖层上的氮化物有源层; 形成在氮化物有源层上的p型氮化物覆盖层; 形成在p型氮化物覆盖层上的p型欧姆接触层; 形成在p型欧姆接触层上的p型电极焊盘; n型欧姆接触层，通过基板分解防止层的图案化区域与n型氮化物覆盖层电连接; 以及形成在n型欧姆接触层下面的n型电极焊盘。

6. 发明申请

US20100136721A1 NITRIDE-BASED WHITE LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：基于氮化物的白光发射装置及其制造方法
公开(公告)号：US20100136721A1
公开(公告)日：2010-06-03
申请号：US12701853
申请日：2010-02-08
申请人： June O. SONG
发明人： June O. SONG
IPC分类号： H01L21/283
CPC分类号： H01L33/42 , H01L33/08 , H01L33/32 , H01L33/40
摘要： A light emitting device includes an n-type cladding layer. a p-type cladding layer. an active layer interposed between the n-type cladding layer and the p-type cladding layer and an ohmic contact layer contacting the p-type cladding layer or the n-type cladding layer. The ohmic contact layer includes a first film that includes a transparent conductive zinc oxide doped with a rare earth metal and including a one-dimensional nano structure. The one-dimensional nano structure is one of a nano-column, a nano rod and a nano wire.
摘要翻译：发光器件包括n型覆层。 p型覆层。介于n型包覆层和p型覆层之间的有源层和与p型覆层或n型覆层接触的欧姆接触层。欧姆接触层包括第一膜，其包括掺杂有稀土金属并包括一维纳米结构的透明导电氧化锌。一维纳米结构是纳米柱，纳米棒和纳米线之一。

7. 发明申请

US20140306254A1 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20140306254A1
公开(公告)日：2014-10-16
申请号：US14312495
申请日：2014-06-23
申请人： June O. SONG
发明人： June O. SONG
IPC分类号： H01L33/60 , H01L33/62
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/0095 , H01L33/08 , H01L33/145 , H01L33/387 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a reflective ohmic contact layer on the support substrate, a functional complex layer including a process assisting region and ohmic contact regions divided by the process assisting region on the reflective ohmic contact layer, and a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on each ohmic contact regio.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括支撑衬底，支撑衬底上的反射欧姆接触层，包括由反射欧姆接触层上的工艺辅助区划分的工艺辅助区和欧姆接触区的功能复合层，以及发光半导体层，包括在每个欧姆接触区域上的第二导电半导体层，有源层和第一导电半导体层。

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