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1. 发明授权

US6022446A Shallow magnetic fields for generating circulating electrons to enhance plasma processing 失效
标题翻译：用于产生循环电子的浅磁场以增强等离子体处理
公开(公告)号：US6022446A
公开(公告)日：2000-02-08
申请号：US517178
申请日：1995-08-21
申请人： Hongching Shan , Bryan Pu , Ji Ding , Michael Welch
发明人： Hongching Shan , Bryan Pu , Ji Ding , Michael Welch
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/00
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/3266
摘要： The present invention is embodied in a plasma reactor for processing a workpiece such as a semiconductor wafer having an axis of symmetry, the reactor including a reactor chamber with a ceiling, a pedestal for supporting the workpiece within the chamber under the ceiling, a processing gas supply inlet into the chamber, an RF plasma power source coupled to the pedestal, and a magnetic field source near the ceiling providing a radially symmetrical magnetic field relative to the axis of symmetry within a portion of the chamber near the ceiling. The magnetic field source can include an electromagnet or plural magnets disposed over the ceiling in a radially symmetrical fashion with respect to the axis of symmetry. The plural magnets may be permanent magnets or electromagnets. The radially symmetrical magnetic field penetrates from the ceiling into the chamber to a shallow depth, and the height of the ceiling above the workpiece exceeds the depth.
摘要翻译：本发明体现在用于处理诸如具有对称轴的半导体晶片的工件的等离子体反应器中，该反应器包括具有天花板的反应室，用于将工件支撑在天花板下方的室内的处理气体供应入室的入口，耦合到基座的RF等离子体电源以及靠近天花板的磁场源，在靠近天花板的腔室的一部分内相对于对称轴提供径向对称的磁场。磁场源可以包括相对于对称轴线以径向对称的方式设置在天花板上方的电磁体或多个磁体。多个磁体可以是永磁体或电磁体。径向对称的磁场从天花板穿透入室至浅深度，工件上方天花板的高度超过深度。

2. 发明授权

US5814563A Method for etching dielectric using fluorohydrocarbon gas, NH.sub.3 -generating gas, and carbon-oxygen gas 失效
标题翻译：使用氟代烃气体，产生NH 3的气体和碳 - 氧气来蚀刻电介质的方法
公开(公告)号：US5814563A
公开(公告)日：1998-09-29
申请号：US660966
申请日：1996-06-12
申请人： Ji Ding , Hongching Shan , Michael Welch
发明人： Ji Ding , Hongching Shan , Michael Welch
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311
CPC分类号： H01L21/31116
摘要： A method of etching a dielectric layer (20) on a substrate (25) with high etching selectivity, low etch rate microloading, and high etch rates is described. In the method, a substrate (25) having a dielectric layer (20) with resist material thereon, is placed in a process zone (55), and a process gas is introduced into the process zone (55). The process gas comprises (i) fluorohydrocarbon gas for forming fluorine-containing etchant species capable of etching the dielectric layer (20), (ii) NH.sub.3 -generating gas having a liquefaction temperature L.sub.T in a range of temperatures .DELTA.T of from about -60.degree. C. to about 20.degree. C., and (iii) carbon-oxygen gas. The temperature of substrate (25) is maintained within about .+-.50.degree. C. of the liquefaction temperature L.sub.T of the NH.sub.3 -generating gas. A plasma is formed from the process gas to etch the dielectric layer (20) on the substrate (25). Preferably, the volumetric flow ratio of fluorohydrocarbon:NH.sub.3 -generating gas is from about 2.5:1 to about 7:1.
摘要翻译：描述了以高蚀刻选择性，低蚀刻速率微加载和高蚀刻速率蚀刻衬底（25）上的介电层（20）的方法。在该方法中，将具有其上具有抗蚀材料的电介质层（20）的基板（25）放置在处理区（55）中，并且处理气体被引入到处理区（55）中。工艺气体包括（i）用于形成能够蚀刻介电层（20）的含氟蚀刻剂物质的氟代烃气体，（ii）在约-60℃的温度范围T T下具有液化温度LT的NH 3产生气体约20℃，（iii）碳 - 氧气。衬底（25）的温度保持在产生NH 3的气体的液化温度LT的约+/- 50℃内。从处理气体形成等离子体，以蚀刻衬底（25）上的介质层（20）。优选地，氟代烃：产生NH 3的气体的体积流量比为约2.5:1至约7:1。

3. 发明授权

US6113731A Magnetically-enhanced plasma chamber with non-uniform magnetic field 失效
标题翻译：具有不均匀磁场的磁增强等离子体室
公开(公告)号：US6113731A
公开(公告)日：2000-09-05
申请号：US735444
申请日：1997-01-02
申请人： Hongching Shan , Roger Lindley , Claes Bjorkman , Xue Yu Qian , Richard Plavidal , Bryan Pu , Ji Ding , Zongyu Li , Kuang-Han Ke , Michael Welch
发明人： Hongching Shan , Roger Lindley , Claes Bjorkman , Xue Yu Qian , Richard Plavidal , Bryan Pu , Ji Ding , Zongyu Li , Kuang-Han Ke , Michael Welch
IPC分类号： H05H1/46 , H01J37/32 , H01L21/00 , H01L21/02 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/687 , C23F1/02
CPC分类号： H01L21/67069 , H01J37/32623 , H01J37/3266 , H01L21/68735
摘要： A plasma chamber having a magnet which produces a magnetic field such that, within a region parallel to and adjacent to the workpiece, the direction of the magnetic field is approximately the vector cross product of (i) the gradient of the magnitude of the magnetic field, and (ii) a vector extending perpendicularly from the workpiece surface toward the plasma. Alternatively, the plasma chamber includes a north magnetic pole and a south magnetic pole located at distinct azimuths around the periphery of the workpiece. The azimuth of the south magnetic pole relative to the north magnetic pole is clockwise around the central axis, and each magnetic pole faces a direction which is more toward than away from a central axis of the workpiece area. An additional aspect of the invention is a plasma chamber having a rotating magnetic field produced by electromagnets spaced around the periphery of the workpiece which receive successive fixed amounts of electrical current during successive time intervals. During each transition between the time intervals, the current supplied to each electromagnet is changed relatively slowly or relatively quickly according to whether the current change includes a change in polarity.
摘要翻译：具有磁体的等离子体室产生磁场，使得在与工件平行并邻近工件的区域内，磁场的方向近似为（i）磁场强度梯度的矢量交叉积，和（ii）从工件表面朝向等离子体垂直延伸的矢量。或者，等离子体室包括北磁极和位于工件周围的不同方位角处的南磁极。南磁极相对于北磁极的方位角是围绕中心轴顺时针旋转的，每个磁极面对的方向远离工件区域的中心轴线。本发明的另一方面是等离子体室，其具有由围绕工件周边间隔开的电磁体产生的旋转磁场，其在连续的时间间隔期间接收连续的固定量的电流。在时间间隔期间的每个转换期间，根据电流变化是否包括极性变化，提供给每个电磁体的电流相对缓慢或相对较快地改变。

4. 发明授权

US6076482A Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion 失效
标题翻译：具有径向向上倾斜天花板的薄膜处理等离子体反应器室，用于促进径向向外扩散
公开(公告)号：US6076482A
公开(公告)日：2000-06-20
申请号：US937347
申请日：1997-09-20
申请人： Ji Ding , James Carducci , Hongching Shan , Siamak Salimian , Evans Lee , Paul E. Luscher , Mike Welch
发明人： Ji Ding , James Carducci , Hongching Shan , Siamak Salimian , Evans Lee , Paul E. Luscher , Mike Welch
IPC分类号： H01J37/32 , C23C16/00 , C23F1/02 , H01L21/302
CPC分类号： H01J37/32458 , H01J37/321
摘要： The invention contours the chamber surface overlying semiconductor wafer being processed (i.e., the chamber ceiling) in such a way as to promote or optimize the diffusion of plasma ions from their regions of origin to other regions which would otherwise have a relative paucity of plasma ions. This is accomplished by providing a greater chamber volume over those areas of the wafer otherwise experiencing a shortage of plasma ions and a smaller chamber volume over those areas of the wafer experiencing a plentitude of plasma ions (e.g, due to localized plasma generation occurring over the latter areas). Thus, the ceiling is contoured to promote a plasma ion diffusion which best compensates for localized or non-uniform patterns in plasma ion generation typical of an inductively coupled source (e.g., an overhead inductive antenna). Specifically, the invention provides a lesser ceiling height (relative to the wafer surface) over regions in which plasma ions are generated or tend to congregate and a greater ceiling height in other regions. More specifically, in the case of an overlying inductive antenna where plasma ion density tends to fall off toward the wafer periphery, the ceiling contour is such that the ceiling height increases radially, i.e., toward the wafer periphery. This promotes or increases plasma ion diffusion toward the wafer periphery as a function of the rate at which the ceiling height increases radially.
摘要翻译：本发明轮廓地覆盖正在被处理的半导体晶片（即，室顶）上的腔表面，以促进或优化等离子体离子从其原始区域扩散到否则将具有相对低的等离子体离子的其它区域。这通过在晶片的那些区域上提供更大的室体积，否则经历等离子体离子的短缺，并且在经历等离子体离子的大量的晶片的那些区域（例如，由于在后面的区域）。因此，天花板的轮廓是促进等离子体离子扩散，其最好地补偿电感耦合源（例如，架空感应天线）典型的等离子体离子产生中的局部或非均匀图案。具体地说，本发明提供了在其中产生等离子体离子或倾向聚集的区域和在其它区域中具有更大的天花板高度的较小的天花板高度（相对于晶片表面）。更具体地说，在等离子体离子密度倾向于朝向晶片周边倾斜的上覆感应天线的情况下，天花板高度使天花板高度径向增加，即朝向晶片周边。这促进或增加等离子体离子向晶片周边的扩散，这是天花板高度径向增加的速率的函数。

5. 发明授权

US06432259B1 Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates 有权
标题翻译：等离子体反应器冷却的天花板，具有热隔离等离子体加热的微型气体分布板阵列
公开(公告)号：US06432259B1
公开(公告)日：2002-08-13
申请号：US09461682
申请日：1999-12-14
申请人： Hamid Noorbakhsh , Michael Welch , Siamak Salimian , Paul Luscher , Hongching Shan , Kaushik Vaidya , Jim Carducci , Evans Lee
发明人： Hamid Noorbakhsh , Michael Welch , Siamak Salimian , Paul Luscher , Hongching Shan , Kaushik Vaidya , Jim Carducci , Evans Lee
IPC分类号： H05H100
CPC分类号： H01J37/32522 , H01J37/321 , H01J37/3244
摘要： A plasma reactor embodying the invention includes a wafer support and a chamber enclosure member having an interior surface generally facing the wafer support. At least one miniature gas distribution plate for introducing a process gas into the reactor is supported on the chamber enclosure member and has an outlet surface which is a fraction of the area of the interior surface of said wafer support. A coolant system maintains the chamber enclosure member at a low temperature, and the miniature gas distribution plate is at least partially thermally insulated from the chamber enclosure member so that it is maintained at a higher temperature by plasma heating.
摘要翻译：体现本发明的等离子体反应器包括晶片支撑件和室外壳构件，其具有大致面向晶片支撑件的内表面。用于将工艺气体引入反应器的至少一个微型气体分配板被支撑在腔室外壳构件上，并且具有出口表面，该出口表面是所述晶片支撑件的内表面区域的一部分。冷却剂系统将室外壳构件保持在低温，并且微型气体分配板与腔室外壳构件至少部分热绝缘，使得其通过等离子体加热保持在较高温度。

6. 发明授权

US5843847A Method for etching dielectric layers with high selectivity and low microloading 失效
标题翻译：高选择性和低负载下蚀刻电介质层的方法
公开(公告)号：US5843847A
公开(公告)日：1998-12-01
申请号：US639388
申请日：1996-04-29
申请人： Bryan Pu , Hongching Shan , Michael Welch
发明人： Bryan Pu , Hongching Shan , Michael Welch
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/00
CPC分类号： H01L21/31116
摘要： A method of etching a dielectric layer on a substrate with high etching selectivity, low etch rate microloading, and high etch rates is described. In the method, the substrate is placed in a process zone, and a plasma is formed from process gas introduced into the process zone. The process gas comprises (i) fluorocarbon gas for etching the dielectric layer and for forming passivating deposits on the substrate, (ii) carbon-oxygen gas for enhancing formation of the passivating deposits, and (iii) nitrogen-containing gas for etching the passivating deposits on the substrate. The volumetric flow ratio of fluorocarbon:carbon-oxygen:nitrogen-containing gas is selected to provide a dielectric to resist etching selectivity ratio of at least about 10:1, an etch rate microloading of
摘要翻译：描述了以高蚀刻选择性，低刻蚀速率微载物和高蚀刻速率蚀刻衬底上的电介质层的方法。在该方法中，将衬底放置在工艺区域中，并且将等离子体从引入工艺区域的工艺气体形成。工艺气体包括（i）用于蚀刻介电层并用于在衬底上形成钝化沉积物的碳氟化合物气体，（ii）用于增强钝化沉积物形成的碳 - 氧气，和（iii）用于蚀刻钝化的含氮气体沉积在基材上。选择氟碳：碳 - 氧：含氮气体的体积流量比以提供电介质以抵抗至少约10:1的蚀刻选择率，<10％的蚀刻速率微载荷，以及在至少约100nm / min。优选地，选择氟碳：碳 - 氧：含氮气体的体积流量比，使得新蚀刻特征的侧壁上的钝化沉积物的形成速率近似等于钝化沉积物的去除速率。

7. 发明授权

US6074514A High selectivity etch using an external plasma discharge 失效
公开(公告)号：US6074514A
公开(公告)日：2000-06-13
申请号：US20959
申请日：1998-02-09
申请人： Claes Bjorkman , Hongching Shan , Michael Welch
发明人： Claes Bjorkman , Hongching Shan , Michael Welch
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , H01L21/3065 , C23F1/02
CPC分类号： H01J37/32871
摘要： An apparatus and method for scavenging etchant species from a plasma formed of etchant gas prior to the etchant gas entering a primary processing chamber of a plasma reactor. There is at least one scavenging chamber, each of which is connected at an inlet thereof to an etchant gas source and at an outlet thereof to a gas distribution device of the primary processing chamber. Each scavenging chamber has a radiation applicator that irradiates the interior of the scavenging chamber and creates a plasma therein from etchant gas flowing through the chamber from the etchant gas source to the gas distribution apparatus of the primary processing chamber. The applicator uses either an inductive discharge, capacitive discharge, direct current (DC) discharge or microwave discharge to irradiate the interior of the scavenging chamber and ignite the plasma. An etchant species scavenging source is also disposed within the scavenging chamber. This source provides scavenging material that interacts with the plasma to scavenge etchant species created by the dissociation of the etchant gas in the plasma and form etch by-products comprised of substances from both the etchant species and the scavenging source. The scavenging chambers can be employed, as is or in a modified form, as excitation chambers to excite gases at optimal conditions and feed the modified gases into the primary chamber. The scavenging chamber is modified by removing its scavenging source if this source would adversely interact with the gas being excited.

8. 发明授权

US5702530A Distributed microwave plasma reactor for semiconductor processing 失效
标题翻译：用于半导体加工的分布式微波等离子体反应器
公开(公告)号：US5702530A
公开(公告)日：1997-12-30
申请号：US494297
申请日：1995-06-23
申请人： Hongching Shan , Harald Herchen , Michael Welch
发明人： Hongching Shan , Harald Herchen , Michael Welch
IPC分类号： H05H1/46 , C23C16/44 , C23C16/452 , C23C16/455 , C23C16/50 , C23C16/511 , C23C16/52 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/452 , C23C16/511 , C23C16/52 , H01J37/32229 , H01J37/32357 , H01J37/3244 , Y10S438/935
摘要： A plasma reactor has plural dielectric gas injection tubes extending from a gas injection source and through a microwave guide and into the top of the reactor chamber. The semiconductor wafer rests near the bottom of the chamber on a wafer pedestal connected to a bias RF power source which is controlled independently of the microwave source coupled to the microwave guide. The microwaves from the waveguide ignite and maintain a plasma in each of the tubes. Gas flow through the tubes carries the plasmas in all the tubes into the chamber and into contact with the wafer surface.
摘要翻译：等离子体反应器具有多个介电气体注入管，其从气体注入源延伸并通过微波引导件并进入反应器室的顶部。半导体晶片位于连接到偏置RF电源的晶片基座上的室底部附近，偏置RF电源独立于耦合到微波引导件的微波源控制。来自波导的微波在每个管中点燃并保持等离子体。通过管的气体流将所有管中的等离子体携带到室中并与晶片表面接触。

9. 发明授权

US5948168A Distributed microwave plasma reactor for semiconductor processing 失效
标题翻译：用于半导体加工的分布式微波等离子体反应器
公开(公告)号：US5948168A
公开(公告)日：1999-09-07
申请号：US947820
申请日：1997-10-09
申请人： Hongching Shan , Harald Herchen , Michael Welch
发明人： Hongching Shan , Harald Herchen , Michael Welch
IPC分类号： H05H1/46 , C23C16/44 , C23C16/452 , C23C16/455 , C23C16/50 , C23C16/511 , C23C16/52 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/452 , C23C16/511 , C23C16/52 , H01J37/32229 , H01J37/32357 , H01J37/3244 , Y10S438/935
摘要： A plasma reactor has plural dielectric gas injection tubes extending from a gas injection source and through a microwave guide and into the top of the reactor chamber. The semiconductor wafer rests near the bottom of the chamber on a wafer pedestal connected to a bias RF power source which is controlled independently of the microwave source coupled to the microwave guide. The microwaves from the waveguide ignite and maintain a plasma in each of the tubes. Gas flow through the tubes carries the plasmas in all the tubes into the chamber and into contact with the wafer surface.
摘要翻译：等离子体反应器具有多个介电气体注入管，其从气体注入源延伸并通过微波引导件并进入反应器室的顶部。半导体晶片位于连接到偏置RF电源的晶片基座上的室底部附近，偏置RF电源独立于耦合到微波引导件的微波源控制。来自波导的微波在每个管中点燃并保持等离子体。通过管的气体流将所有管中的等离子体携带到室中并与晶片表面接触。

10. 发明授权

US5865937A Broad-band adjustable power ratio phase-inverting plasma reactor 失效
标题翻译：宽带可调功率比相位等效电抗器
公开(公告)号：US5865937A
公开(公告)日：1999-02-02
申请号：US517177
申请日：1995-08-21
申请人： Hongching Shan , Hiroji Hanawa , Robert Wu , Michael Welch
发明人： Hongching Shan , Hiroji Hanawa , Robert Wu , Michael Welch
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , C23F1/08
CPC分类号： H01J37/32174
摘要： In a plasma reactor including a vacuum chamber for containing at least a reactant gas at a selected pressure and a semiconductor wafer to be processed, a pair of electrodes for capacitively coupling radio frequency power into the chamber and a radio frequency source having a radio frequency power terminal, a circuit for coupling the radio frequency source to the pair of electrodes includes a coil having plural conductive windings and a pair of terminals bounding plural ones of the windings, the pair of terminals coupled to respective ones of the pair of electrodes, one of the windings connected to the power terminal of the radio frequency source, and a grounded conductive tap contacting the coil and slidable along the plural ones of the windings between the pair of terminals for varying a ratio of power apportioned between the pair of electrodes.
摘要翻译：在包括用于在选定压力下容纳至少一种反应气体的真空室和待处理的半导体晶片的等离子体反应器中，将用于将射频功率电容耦合到腔室中的一对电极和具有射频功率的射频源端子，用于将射频源耦合到该对电极的电路包括具有多个导体绕组的线圈和限定多个绕组的一对端子，该对端子耦合到该对电极中的相应电极，连接到射频源的电源端子的绕组以及与线圈接触的接地导线，并且可以沿着一对端子之间的多个绕组滑动，以改变在该对电极之间分配的功率比。

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