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    • 7. 发明授权
    • Complementary metal oxide semiconductor image sensor layout structure
    • 互补金属氧化物半导体图像传感器布局结构
    • US07214998B2
    • 2007-05-08
    • US11161174
    • 2005-07-26
    • Hsin-Ping WuChia-Huei Lin
    • Hsin-Ping WuChia-Huei Lin
    • H01L31/00
    • H01L27/14645H01L27/14603H01L27/14621H01L27/14627H01L27/1463
    • A complementary metal oxide semiconductor (CMOS) image sensor layout structure is described. The CMOS image sensor layout structure includes a substrate, a plurality of light sensing devices, a plurality of transistors and a plurality of color-filtering film layers. The substrate has a pixel array region comprising a plurality of pixels. Each pixel has a light sensing region and an active device region. The pixels are isolated from one another by isolation structures and the light sensing regions have different sizes. The light sensing devices are defined separately within the respective light sensing regions. The transistors are disposed within the respective active device region. The color-filtering film layers are disposed separately above the pixels to form a color-filtering array.
    • 描述了互补金属氧化物半导体(CMOS)图像传感器布局结构。 CMOS图像传感器布置结构包括基板,多个光感测装置,多个晶体管和多个滤色膜层。 衬底具有包括多个像素的像素阵列区域。 每个像素具有光感测区域和有源器件区域。 像素通过隔离结构彼此隔离,并且光感测区域具有不同的尺寸。 光感测装置在相应的光感测区域内分开限定。 晶体管设置在相应的有源器件区域内。 滤色膜层分别设置在像素之上,以形成滤色阵列。