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    • 2. 发明授权
    • Vacuum/gas phase reactor for dehydroxylation and alkylation of porous silica
    • 真空/气相反应器用于多羟基硅烷的脱羟基和烷基化
    • US06548113B1
    • 2003-04-15
    • US09711666
    • 2000-11-09
    • Jerome BirnbaumGary MaupinGlen DunhamGlen FryxellSuresh Baskaran
    • Jerome BirnbaumGary MaupinGlen DunhamGlen FryxellSuresh Baskaran
    • C23C1644
    • C01B37/02H01L21/31695Y10T428/249969Y10T428/249972
    • Vacuum/gas phase reactor embodiments used in gas phase dehydroxylation and alkylation reactions are described in which the substrate could be subjected to high vacuum, heated to target temperature, and treated with silane as quickly and efficiently as possible. To better facilitate the silylation and to increase the efficiency of the process, the reactor is designed to contain quasi-catalytic surfaces which can act both as an “activator” to put species in a higher energy state or a highly activated state, and as a “scrubber” to eliminate possible poisons or reactive by-products generated in the silylation reactions. One described embodiment is a hot filament reactor having hot, preferably metallic, solid surfaces within the reactor's chamber in which wafers having mesoporous silicate films are treated. Another is an IR reactor having upper and lower quartz windows sealing the upper and lower periphery of an aluminum annulus to form a heated chamber. Finally, a flange reactor is described that includes a flange base and lid forming a tiny chamber therein for a wafer, the reactor being heated by conduction from a hot sand bath. The dehydroxylation and alkylation treatment of mesoporous silica films produces treated films exhibiting low dielectric constant and high elastic modulus.
    • 描述了用于气相脱羟基和烷基化反应的真空/气相反应器实施例,其中基底可经受高真空,加热至目标温度,并尽可能快速且有效地用硅烷处理。 为了更好地促进甲硅烷基化和提高该方法的效率,反应器被设计成包含准催化剂表面,它们既可以作为“活化剂”来将物质置于更高能量状态或高活化状态,也可以作为 “洗涤器”来消除在甲硅烷化反应中产生的可能的毒物或反应性副产物。 一个描述的实施方案是在反应器室内具有热的,优选金属的固体表面的热丝反应器,其中处理具有介孔硅酸盐膜的晶片。 另一种是IR反应器,其具有密封铝环空的上下周边的上,下石英窗,以形成加热室。 最后,描述了一种法兰反应器,其包括法兰基座和盖子,用于在晶片上形成微小的室,该反应器由热砂浴传导加热。 介孔二氧化硅膜的脱羟基化和烷基化处理产生显示低介电常数和高弹性模量的处理膜。