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1. 发明申请

US20070169811A1 High-throughput printing of semiconductor precursor layer by use of thermal and chemical gradients 审中-公开
标题翻译：通过使用热和化学梯度对半导体前体层进行高通量打印
公开(公告)号：US20070169811A1
公开(公告)日：2007-07-26
申请号：US11361523
申请日：2006-02-23
申请人： Jeroen Van Duren , Martin Roscheisen , Matthew Robinson , Craig Leidholm
发明人： Jeroen Van Duren , Martin Roscheisen , Matthew Robinson , Craig Leidholm
IPC分类号： H01L31/00
CPC分类号： B22F9/04 , B22F1/0055 , B22F2009/041 , B22F2999/00 , C23C4/123 , C23C18/1204 , C23C18/1225 , C23C18/1229 , C23C18/1241 , C23C18/127 , C23C18/1279 , C23C18/1283 , C23C24/10 , C23C26/00 , C23C26/02 , H01L21/02568 , H01L21/02601 , H01L21/02614 , H01L21/02628 , H01L31/0322 , H01L31/0749 , H01L51/0026 , H01L51/426 , Y02E10/541 , Y02E10/549 , B22F2202/03
摘要： A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method includes forming a first layer of a first precursor material over a surface of a substrate, wherein the precursor material comprises group IB-chalcogenide and/or group IIIA-chalcogenide particles. The method may include forming at least a second layer of a second precursor material over the first layer, wherein the second precursor material comprises group IB-chalcogenide and/or group IIIA-chalcogenide particles and wherein the second precursor material has a chalcogen content greater than that of the first material. The method may also include heating the first layer and the second layer in a suitable atmosphere to a temperature sufficient to react the particles and to release at least the surplus amount of chalcogen from the chalcogenide particles, wherein the surplus amount of chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form the group IB-IIIA-chalcogenide film at a desired stoichiometric ratio
摘要翻译：公开了一种通过使用含硫属原子的蒸气形成半导体前体层的高通量方法。在一个实施方案中，所述方法包括在基材的表面上形成第一前体材料的第一层，其中所述前体材料包含IB族硫族化合物和/或IIIA族硫族化物颗粒。该方法可以包括在第一层上形成第二前体材料的至少第二层，其中第二前体材料包含IB族硫族化物和/或IIIA族硫族化物颗粒，并且其中第二前体材料的硫族元素含量大于第一种材料。该方法还可以包括在合适的气氛中将第一层和第二层加热到足以使颗粒反应的温度，并从硫族化物颗粒中释放至少剩余量的硫属元素，其中剩余量的硫族元素呈现液体形式并且用作助熔剂以改善元素的混合以形成所需化学计量比的IB-IIIA族硫族化合物膜

2. 发明申请

US20070169809A1 High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides 审中-公开
标题翻译：通过使用低熔点硫族化物对半导体前体层进行高通量打印
公开(公告)号：US20070169809A1
公开(公告)日：2007-07-26
申请号：US11361103
申请日：2006-02-23
申请人： Jeroen Van Duren , Matthew Robinson , Craig Leidholm
发明人： Jeroen Van Duren , Matthew Robinson , Craig Leidholm
IPC分类号： H01L31/00
CPC分类号： B22F9/04 , B22F1/0055 , B22F2009/041 , B22F2999/00 , C23C4/123 , C23C18/1204 , C23C18/1225 , C23C18/1229 , C23C18/1241 , C23C18/127 , C23C18/1279 , C23C18/1283 , C23C24/10 , C23C26/00 , C23C26/02 , H01L31/0322 , H01L31/06 , H01L31/0749 , H01L31/18 , H01L51/0026 , H01L51/426 , Y02E10/541 , Y02E10/549 , B22F2202/03
摘要： A high-throughput method of forming a semiconductor precursor layer by use of low-melting chalcogenides is disclosed. In one embodiment, a method is provided that comprises of forming a precursor material comprising group IB-chalcogenide and/or group IIIA-chalcogenide particles, wherein amounts of the group IB or IIIA element and amounts of chalcogen in the particles are selected to be at a desired stoichiometric ratio for the group IB or IIIA chalcogenide that provides a melting temperature less than a highest melting temperature found on a phase diagram for any stoichiometric ratio of elements for the group IB or IIIA chalcogenide. The method includes disposing the particle precursor material over a surface of a substrate and heating the particle precursor material to a temperature sufficient to react the particles to form a film of a group IB-IIIA-chalcogenide compound. The method may include at least partially melting the particles.
摘要翻译：公开了一种通过使用低熔点硫族化合物形成半导体前体层的高通量方法。在一个实施方案中，提供了一种方法，其包括形成包含IB-硫族化物和/或IIIA-硫族化物颗粒的前体材料，其中IB或IIIA族元素的量和颗粒中的硫属元素的量被选择为对IB或IIIA族硫族化物基团的理想化学计量比，其提供熔融温度低于在IB图或IIIA族硫族化物元素的化学计量比的相图上发现的最高熔融温度。该方法包括将颗粒前体材料设置在基材的表面上并将颗粒前体材料加热到足以使颗粒反应以形成IB-IIIA-硫族化物化合物组分的膜的温度。该方法可以包括至少部分地熔化颗粒。

3. 发明申请

US20070163639A1 High-throughput printing of semiconductor precursor layer from microflake particles 审中-公开
公开(公告)号：US20070163639A1
公开(公告)日：2007-07-19
申请号：US11361498
申请日：2006-02-23
申请人： Matthew Robinson , Jeroen Van Duren , Craig Leidholm
发明人： Matthew Robinson , Jeroen Van Duren , Craig Leidholm
IPC分类号： H01L31/00
CPC分类号： B22F9/04 , B22F1/0055 , B22F2001/0033 , B22F2998/00 , B22F2999/00 , C23C4/123 , C23C18/1204 , C23C18/1225 , C23C18/1229 , C23C18/1241 , C23C18/127 , C23C18/1275 , C23C18/1283 , C23C18/14 , C23C24/10 , C23C26/00 , C23C26/02 , H01L31/022466 , H01L31/0322 , H01L31/06 , H01L31/0749 , H01L31/18 , H01L51/0026 , H01L51/426 , Y02E10/541 , Y02E10/549 , Y02P70/521 , B22F1/0022 , B22F2202/03
摘要： Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices.

4. 发明申请

US20070163638A1 Photovoltaic devices printed from nanostructured particles 审中-公开
标题翻译：由纳米结构颗粒印制的光伏器件
公开(公告)号：US20070163638A1
公开(公告)日：2007-07-19
申请号：US11361497
申请日：2006-02-23
申请人： Jeroen Van Duren , Matthew Robinson , Craig Leidholm
发明人： Jeroen Van Duren , Matthew Robinson , Craig Leidholm
IPC分类号： H01L31/00
CPC分类号： B22F9/04 , B22F1/0055 , B22F2009/041 , B22F2999/00 , C23C4/123 , C23C18/1204 , C23C18/1225 , C23C18/1229 , C23C18/1241 , C23C18/127 , C23C18/1279 , C23C18/1283 , C23C24/10 , C23C26/00 , C23C26/02 , H01L31/00 , H01L31/0322 , H01L31/06 , H01L31/0749 , H01L31/18 , H01L51/0026 , H01L51/426 , Y02E10/541 , Y02E10/549 , B22F2202/03
摘要： Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, a solar cell is provided that comprises of a substrate, a back electrode formed over the substrate, a p-type semiconductor thin film formed over the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type semiconductor thin film, and a transparent electrode formed over the n-type semiconductor thin film. The p-type semiconductor thin film results by processing a dense film formed from a plurality of microflakes having a material composition containing at least one element from Groups IB, IIIA, and/or VIA, wherein the dense film has a void volume of about 26% or less. The dense film may be a substantially void free film.
摘要翻译：提供了用于从微片微粒高通量印刷半导体前体层的方法和装置。在一个实施例中，提供了一种太阳能电池，其包括基板，形成在基板上的背电极，形成在背电极上的p型半导体薄膜，形成为构成pn的n型半导体薄膜与p型半导体薄膜的接合，以及形成在n型半导体薄膜上的透明电极。 p型半导体薄膜通过加工由具有包含IB，IIIA和/或VIA组中的至少一种元素的材料组成的多个微花纹形成的致密膜，其中致密膜具有约26的空隙体积％或更少。致密膜可以是基本上无空隙的膜。

5. 发明申请

US20070169813A1 High-throughput printing of semiconductor precursor layer from microflake particles 审中-公开
标题翻译：从微片颗粒高通量印制半导体前体层
公开(公告)号：US20070169813A1
公开(公告)日：2007-07-26
申请号：US11362266
申请日：2006-02-23
申请人： Matthew Robinson , Jeroen Van Duren , Craig Leidholm
发明人： Matthew Robinson , Jeroen Van Duren , Craig Leidholm
IPC分类号： H01L31/00
CPC分类号： H01L31/1864 , C23C18/1204 , H01L31/0322 , H01L31/0352 , H01L31/06 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices.
摘要翻译：提供了用于从微片微粒高通量印刷半导体前体层的方法和装置。在一个实施方案中，该方法包括在合适的条件下，在合适的载体中转化非平面或平面前体材料，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在沉降之后。特别地，平面颗粒更容易分散，形成更致密的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。这些平面颗粒可以是具有高纵横比的微片。由微片形成的所得致密膜在形成光伏器件中特别有用。

6. 发明申请

US20070169812A1 High-throughput printing of semiconductor precursor layer from nanoflake particles 审中-公开
公开(公告)号：US20070169812A1
公开(公告)日：2007-07-26
申请号：US11361688
申请日：2006-02-23
申请人： Matthew Robinson , Jeroen Van Duren , Craig Leidholm
发明人： Matthew Robinson , Jeroen Van Duren , Craig Leidholm
IPC分类号： H01L31/00
CPC分类号： H01L31/0322 , C23C18/1204 , C23C18/127 , C23C18/1279 , H01L31/0352 , H01L31/0749 , H01L31/078 , H01L31/1864 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.

7. 发明申请

US20070169810A1 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor 审中-公开
标题翻译：通过使用含硫属元素的蒸气对半导体前体层进行高通量打印
公开(公告)号：US20070169810A1
公开(公告)日：2007-07-26
申请号：US11361464
申请日：2006-02-23
申请人： Jeroen Van Duren , Matthew Robinson , Craig Leidholm
发明人： Jeroen Van Duren , Matthew Robinson , Craig Leidholm
IPC分类号： H01L31/00
CPC分类号： H01L31/0322 , C23C18/1204 , C23C18/127 , C23C18/1275 , Y02E10/541
摘要： A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method comprises forming a precursor material comprising group IB and/or group IIIA particles of any shape. The method may include forming a precursor layer of the precursor material over a surface of a substrate. The method may further include heating the particle precursor material in a substantially oxygen-free chalcogen atmosphere to a processing temperature sufficient to react the particles and to release chalcogen from the chalcogenide particles, wherein the chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form a group IB-IIIA-chalcogenide film at a desired stoichiometric ratio. The chalcogen atmosphere may provide a partial pressure greater than or equal to the vapor pressure of liquid chalcogen in the precursor layer at the processing temperature.
摘要翻译：公开了一种通过使用含硫属原子的蒸气形成半导体前体层的高通量方法。在一个实施方案中，该方法包括形成包含任何形状的IB族和/或IIIA族颗粒的前体材料。该方法可以包括在衬底的表面上形成前体材料的前体层。该方法还可以包括将基本上无氧的硫属元素气氛中的颗粒前体材料加热到足以使颗粒反应并从硫族化物颗粒中释放硫属元素的处理温度，其中硫族元素呈现液体形式并用作助熔剂以改善元素的混合以期望的化学计量比形成IB-IIIA族硫族化合物膜。硫属化合物气氛可以在处理温度下提供大于或等于前体层中液态硫属元素的蒸气压的分压。

8. 发明申请

US20070166453A1 High-throughput printing of chalcogen layer 审中-公开
标题翻译：高通量打印硫属元素层
公开(公告)号：US20070166453A1
公开(公告)日：2007-07-19
申请号：US11361522
申请日：2006-02-23
申请人： Jeroen Van Duren , Matthew Robinson , Craig Leidholm
发明人： Jeroen Van Duren , Matthew Robinson , Craig Leidholm
IPC分类号： B05D3/00
CPC分类号： C23C18/1283 , C23C18/1204 , C23C18/1225 , C23C18/1241 , C23C18/127 , H01L31/0322 , H01L31/06 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, wherein the precursor layer comprises one or more discrete layers. The layers may include at least a first layer containing one or more group IB elements and two or more different group IIIA elements and at least a second layer containing elemental chalcogen particles. The precursor layer may be heated to a temperature sufficient to melt the chalcogen particles and to react the chalcogen particles with the one or more group IB elements and group IIIA elements in the precursor layer to form a film of a group IB-IIIA-chalcogenide compound. The method may also include making a film of group IB-IIIA-chalcogenide compound that includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.
摘要翻译：公开了用于形成IB-IIIA族硫族化合物化合物的膜的前体材料的高通量印刷的方法和装置。在一个实施例中，该方法包括在衬底上形成前体层，其中前体层包含一个或多个离散层。这些层可以包括至少包含一个或多个IB族元素和两个或更多个不同IIIA族元素的第一层和至少包含元素硫族元素颗粒的第二层。可以将前体层加热到足以熔化硫族元素颗粒的温度，并使硫族元素颗粒与前体层中的一种或多种IB族元素和IIIA族元素反应，以形成IB-IIIA族硫族化合物组合物。该方法还可以包括制备IB-IIIA族硫族化合物化合物的膜，其包括混合纳米颗粒和/或纳米金属和/或纳米质子以形成油墨，将油墨沉积在基材上，加热熔化额外的硫属元素并反应具有IB族和IIIA族元素和/或硫族化物的硫族化合物以形成致密膜。

9. 发明申请

US20070163640A1 High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides 审中-公开
标题翻译：通过使用富含硫属元素的硫族化合物对半导体前体层进行高通量打印
公开(公告)号：US20070163640A1
公开(公告)日：2007-07-19
申请号：US11361515
申请日：2006-02-23
申请人： Jeroen Van Duren , Matthew Robinson , Craig Leidholm
发明人： Jeroen Van Duren , Matthew Robinson , Craig Leidholm
IPC分类号： H01L31/00 , B05D3/00
CPC分类号： H01L31/18 , B22F1/0055 , B22F9/04 , B22F2001/0033 , B22F2998/00 , B22F2999/00 , C23C18/1204 , C23C18/1279 , H01L31/0322 , H01L31/06 , H01L31/0749 , H01L31/1876 , Y02E10/541 , Y02P70/521 , B22F1/0022 , B22F2202/03
摘要： A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-rich chalcogenides is disclosed. The method comprises forming a precursor material comprising group IB-chalcogenide and/or group IIIA-chalcogenide particles, wherein an overall amount of chalcogen in the particles relative to an overall amount of chalcogen in a group IB-IIIA-chalcogenide film created from the precursor material, is at a ratio that provides an excess amount of chalcogen in the precursor material. The excess amount of chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form the group IB-IIIA-chalcogenide film at a desired stoichiometric ratio, wherein the excess amount of chalcogen in the precursor material is an amount greater than or equal to a stoichiometric amount found in the IB-IIIA-chalcogenide film.
摘要翻译：公开了一种通过使用富含硫属元素的硫族化合物形成半导体前体层的高通量方法。该方法包括形成包含IB-硫族化物和/或IIIA-硫族化物颗粒的前体材料，其中颗粒中的硫族元素的总量相对于由前体产生的IB-IIIA族硫族化物膜中的总硫属元素的总量材料的比例在前体材料中提供过量的硫族元素。过量的硫族元素呈现液体形式并用作助熔剂以改善元素的混合以形成所需化学计量比的IB-IIIA族硫族化合物膜，其中前体材料中过量的硫族元素的量大于或等于在IB-IIIA-硫族化物膜中发现的化学计量。

10. 发明申请

US20070163637A1 High-throughput printing of semiconductor precursor layer from nanoflake particles 失效
标题翻译：从纳米薄片颗粒中高通量印制半导体前体层
公开(公告)号：US20070163637A1
公开(公告)日：2007-07-19
申请号：US11361433
申请日：2006-02-23
申请人： Matthew Robinson , Jeroen Van Duren , Craig Leidholm
发明人： Matthew Robinson , Jeroen Van Duren , Craig Leidholm
IPC分类号： H01L31/00
CPC分类号： B22F9/04 , B22F1/0055 , B22F2001/0033 , B22F2998/00 , B22F2999/00 , C23C18/1229 , C23C18/127 , C23C18/1275 , C23C18/1283 , C23C18/14 , H01L31/0322 , H01L31/06 , H01L31/0749 , H01L31/18 , H01L31/1876 , Y02E10/541 , Y02P70/521 , B22F1/0022 , B22F2202/03
摘要： Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.
摘要翻译：提供了用于在合适的条件下在合适的载体中转化非平面或平面前体材料的方法和装置，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在选择性力沉降之后。特别地，平面颗粒更容易分散，形成更致密的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。这些平面颗粒可以是具有高纵横比的纳米片。由纳米片形成的致密膜特别适用于形成光电器件。

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